聚合物物理属性对离子注入效应的影响

聚合物导电性能差, 表面电荷积聚所产生的电容效应致使其表面电位衰减, 采用等离子体浸没离子注入对其表面改性是非常困难的. 建立了绝缘材料等离子体浸没离子注入过程的粒子模拟(PIC)模型, 实时跟踪离子在等离子体鞘层中的运动形态及特性并进行统计分析. 并基于PIC模型, 将聚合物表面的二次电子发射系数直接与离子注入即时能量建立关联, 研究了聚合物厚度、介电常数和二次电子发射系数等物理量对鞘层演化、离子注入能量和剂量的影响规律. 研究结果表明: 当聚合物厚度小于200 μ m, 相对介电常数大于7, 二次电子发射系数小于0.5时, 离子注入剂量和高能离子所占的份额与导体离子注入情况相当. 通过对聚合物表面离子注入剂量和高能离子所占份额的研究, 为绝缘材料和半导体材料表面等离子体浸没离子注入的实现提供了理论和实验依据.     

电子的非广延分布对等离子体鞘层中二次电子发射的影响

采用一维流体模型研究了非广延分布电子对等离子体鞘层中二次电子发射的影响.通过数值模拟,研究了非广延分布电子对考虑二次电子发射的等离子体鞘层玻姆判据、器壁电势、器壁二次电子临界发射系数以及等离子体鞘层中二次电子密度分布的影响.研究结果发现,当电子分布偏离麦克斯韦分布(q=1,广延分布)时,非广延参量q的改变对器壁二次电子发射有着重要的影响.不论电子分布处于超广延(q 1),还是处于亚广延状态(q 1),随着非广延参量q的增加,都会出现鞘边临界马赫数跟着减小,同时对于随着二次电子发射系数的增加,临界马赫数跟着增加.器壁电势随着参量q的增加而增加.器壁二次电子临界发射系数则随着非广延参量的增加而减小,并且等离子体中所含的离子种类质量数越大,非广延参量的变化对器壁二次电子临界发射系数的值影响越小.此外,随着非广延参量的增加,鞘层厚度减小,鞘层中二次电子数密度增加.通过对数值模拟结果分析,发现电子分布处于超广延分布状态对等离子体鞘层中二次电子发射特性的影响要比电子处于亚广延分布状态要更明显.     

脉冲偏压上升沿特性对等离子体浸没离子注入鞘层扩展动力学的影响

等离子体浸没离子注入(PIII)是用于材料表面改性的一种廉价高效、非视线的技术.采用等离子体粒子模型，通过假设电子密度服从Boltzmann分布，求解Poisson方程和Newton方程，跟踪离子在等离子体鞘层中的运动形态及特性并进行统计分析，研究了不同上升速率和形状的6种波形上升沿对鞘层时空演化、离子注入能量和剂量的影响.结果表明，在PIII过程中，脉冲上升沿影响了等离子体鞘层的扩展，且不同波形诱导的鞘层厚度间存在最大差值.电场强度在鞘层的外边缘区域存在陡降区，离子的运动为非匀加速过程.可以通过调整脉冲 关键词： 等离子体浸没离子注入 鞘层 粒子模型 上升沿     

霍尔推进器中磁化二次电子对鞘层特性的影响

为进一步研究霍尔推进器壁面二次电子发射对推进器性能的影响,采用流体模型数值模拟了二次电子磁化效应的等离子体鞘层特性.得到二次电子磁化鞘层的玻姆判据.讨论了不同的磁场强度和方向、二次电子发射系数以及不同种类等离子体推进器的鞘层结构.结果表明:随器壁二次电子发射系数的增大,鞘层中粒子密度增加,器壁电势升高,鞘层厚度减小;鞘层电势及粒子密度随着磁场强度和方位角的增加而增加;而对于不同种类的等离子体,壁面电势和鞘层厚度也不同.这为霍尔推进器的磁安特性实验提供了理论解释. 关键词： 霍尔推进器 磁鞘 二次电子     

二次电子发射和负离子存在时的鞘层结构特性

 建立了包括电子、离子、器壁发射二次电子以及负离子多种成分的等离子体无碰撞鞘层的基本模型,讨论了二次电子发射和负离子对1维稳态等离子体鞘层结构的影响,并且分析了多种成分等离子体鞘层内的二次电子和负离子的相互作用。结果表明：二次电子发射系数的增加和负离子含量的增加,都将导致鞘层的厚度有所减小;二次电子发射系数超过临界发射系数之后,鞘层不再是离子鞘。随着器壁材料二次电子发射系数的增加,鞘层中的负离子密度分布也逐渐增加;负离子的增加,导致二次电子临界发射系数有所增加。另外,在等离子体鞘层中二次电子发射和负离子的存在,也影响着鞘层中电子的放电特性与器壁材料的腐蚀。     

基于微陷阱结构的金属二次电子发射系数抑制研究

近年来,金属二次电子发射系数的抑制研究在加速器、大功率微波器件等领域得到了广泛关注.为评估表面形貌对抑制效果的影响,利用唯象概率模型计算方法对三角形沟槽、矩形沟槽、方孔及圆孔4种不同形状微陷阱结构的二次电子发射系数进行了研究,分析了微陷阱结构的形状、尺寸对二次电子发射系数抑制特性的影响规律.理论研究结果表明:陷阱结构的深宽比、孔隙率越大,则其二次电子发射系数抑制特性越明显;方孔形和圆孔形微陷阱结构的二次电子发射系数抑制效果优于三角形沟槽和矩形沟槽;具有大孔隙率的微陷阱结构表面的二次电子发射系数对入射角度的依赖显著弱于平滑表面.制备了具有不同表面形貌的金属样片并进行二次电子发射系数测试,所得实验规律与理论模拟规律符合较好.     

SMILE卫星的表面充电效应

卫星在轨运行时,航天器表面材料与周围的等离子体环境相互作用,会积累电荷产生表面充电效应,严重时将导致静电放电从而影响航天器的运行. SMILE卫星运行在太阳同步轨道和高倾角大椭圆轨道,在轨运行将遭遇多种等离子体环境,产生的表面充电效应将影响卫星在轨安全和科学数据的获取.本文采用spacecraft plasma interaction system软件仿真,建立了复杂精细的三维模型,评估了卫星在磁尾瓣等离子体、太阳风等离子体及地球静止轨道极端恶劣等离子体不同环境中的表面充电风险.仿真结果显示,不同环境下的表面充电电位有差异,但是不会影响科学载荷的数据获取.通过对表面电流的分析发现,二次电子发射在各种等离子体环境中都对表面充电有很大的影响.通过分析阴影区材料表面充电电流,计算得到的结果能够补充氧化铟锡材料二次电子发射系数实验曲线.在光照下,光电子发射在表面充电中占据统治地位.     

纳米金刚石薄膜的二次电子发射特性

 简要介绍了微波等离子体化学气相沉积（MPCVD）方法在硅基底上制备纳米金刚石薄膜的过程,并对制备的薄膜进行了表面分析。在此基础上设计出了用来测定反射型二次电子发射系数的实验装置,得出了几种薄膜在不同入射能量下的发射系数,取得了二次发射系数为15的满意结果,表明纳米金刚石薄膜作为二次电子发射材料具有很好的应用前景。     

栅网与偏压对CHF3电子回旋共振放电等离子体特性的影响

研究了电子回旋共振等离子体增强化学气相沉积系统中栅网的增加和栅网上施加+60V和-60V偏压对CHF3放电等离子体特性的影响.发现在低微波功率下栅网与偏压对等离子体中基团分布的影响较大,而高微波功率下的影响逐渐减小.这是由于低微波功率下等离子体中电子温度较低,基团的分布同时受栅网鞘电场和电子碰撞分解的共同作用;而高微波功率下电子温度较高,栅网鞘电场的作用减弱,基团分布主要取决于电子碰撞分解作用.     

电子入射角度对聚酰亚胺二次电子发射系数的影响

采用具有负偏压收集极的二次电子发射系数测试系统, 对聚酰亚胺样品的二次电子发射系数与入射电子角度和入射电子能量的关系进行了测量. 测量结果表明, 在电子小角度入射样品的情况下, 随着入射角度的增加, 二次电子发射系数单调增加, 并符合传统的规律, 但是在电子大角度入射时, 却与此不符合. 测量显示, 出现偏差时对应的临界电子入射角度随着入射电子能量的降低而减小. 采用简化的电子弹性散射过程和卢瑟福弹性散射截面公式对这种偏差的出现进行了分析, 并推导出修正后的二次电子发射系数的计算公式. 修正后的二次电子发射系数的计算结果更加符合实验结果.     

Heat flow through a plasma sheath in the presence of secondary electron emission from plasma‐wall interaction

The formation of a plasma sheath in front of a negative wall emitting secondary electron is studied by a one‐dimensional fluid model. The model takes into account the effect of the ion temperature. With the secondary electron emission (SEE ) coefficient obtained by integrating over the Maxwellian electron velocity distribution for various materials such as Be, C, Mo, and W, it is found that the wall potential depends strongly on the ion temperature and the wall material. Before the occurrence of the space‐charge‐limited (SCL ) emission, the wall potential decreases with increasing ion temperature. The variation of the sheath potential caused by SEE affects the sheath energy transmission and impurity sputtering yield. If SEE is below SCL emission , the energy transmission coefficient always varies with the wall materials as a result of the effect of SEE , and it increases as the ion temperature is increased. By comparison of with and without SEE , it is found that sputtering yields have pronounced differences for low ion temperatures but are almost the same for high ion temperatures.     

Plasma immersion ion implantation with dielectric substrates

Plasma immersion ion implantation (PIII) is a novel implantation technique for high-dose/high-current implants. Using the SPICE circuit simulator to model the PIII process, the sheath voltage and ion energy distribution are examined. Implanting into a dielectric substrate results in a significant voltage buildup in the wafer, reducing the effective implant energy. Increasing the pulse voltage raises the dose/pulse, but at the cost of an expanded implant energy spread. Increasing the plasma ion density also raises the dose/pulse, but at the cost of a wider implant energy spread and a lower coupling efficiency. Increasing the substrate thickness reduces both the coupling efficiency and dose/pulse while broadening the energy spread. The large voltage generated across the dielectric substrate decreases the charge neutralization time significantly, reducing the possibility of gate oxide damage     

Electric probe measurements of high-voltage sheath collapse in cathodic arc plasmas due to surface charging of insulators

High-voltage sheath dynamics near a negatively biased substrate in cathodic arc plasmas are investigated using a biased electrical probe. Since the sheath is devoid of electrons, the sheath boundary can be inferred from the position where a positively biased probe draws no electron current. The extent of the sheath is primarily dependent on the plasma density, the ion velocity and the applied voltage. Using insulating substrates, the sheath boundary eventually retracts due to a dynamic reduction in the applied voltage. This reduction is caused by positive charge accumulation on the insulator surface. The collapse time of the sheath is dependent on the plasma density and the substrate characteristics. We believe this to be the first direct observation of the reduction in the width of the high-voltage sheath when implanting an electrical insulator using plasma-based ion implantation (PBII). This information is important when determining the optimal parameters for plasma-based ion implantation of insulators. Our measurements are compared with theoretical predictions based on the Child-Langmuir equations for high-voltage sheaths. By choosing appropriate values for the secondary electron coefficient the theory could be made to fit the experimental data. A discussion of the validity of the choice of secondary electron coefficients is presented.     

Process and electrical (modulator) efficiency of plasma immersionion implantation

Plasma immersion ion implantation (PIII) has been shown to be an effective surface modification technique. In PIII processes, the implantation voltage has a large impact on the process and electrical (modulator) efficiency. For experiments in which the sample temperature is raised to a constant value by ion bombardment only - without external heating - our simulation studies reveal that the low-voltage mode featuring a higher ion current density gives rise to a higher electrical efficiency with regard to both single- and batch-processing. The low-voltage mode also produces a thinner plasma sheath and lower energy loss to the passive resistor. The hardware capacitance is responsible for the reduction in the electrical efficiency. For PIII experiments conducted under typical conditions, e.g., plasma density of 5.0×10 ⁹ cm^-3, implanted area of 0.08 m², and employing a 10 kΩ pull-down resistor for operations between 1 kV and 100 kV, the efficiency of the power modulator is quite low and generally less than 50% exclusive of the inefficiency stemming from secondary electrons. Our results demonstrate that the low-voltage, small pulse-duration operating mode has higher implantation efficiency compared to conventional high-voltage PIII. This can be attributed to the higher effective implantation efficiency η_e resulting from the smaller secondary electron coefficient at a lower voltage and higher electrical efficiency η_p, in the low-voltage, short-pulsewidth operating mode. Our work suggests that both the total implantation efficiency η_total and modification efficacy can be improved by elevated-temperature, high-frequency, low-voltage PIII     

Sheath structure in plasma with two species of positive ions and secondary electrons

The properties of a collisionless plasma sheath are investigated by using a fluid model in which two species of positive ions and secondary electrons are taken into account. It is shown that the positive ion speeds at the sheath edge increase with secondary electron emission(SEE) coefficient, and the sheath structure is affected by the interplay between the two species of positive ions and secondary electrons. The critical SEE coefficients and the sheath widths depend strongly on the positive ion charge number, mass and concentration in the cases with and without SEE. In addition, ion kinetic energy flux to the wall and the impact of positive ion species on secondary electron density at the sheath edge are also discussed.     

二次电子分布函数对绝缘壁面稳态鞘层特性的影响

由于缺乏详细的理论计算和实验结果,在研究绝缘壁面稳态流体鞘层特性时,通常假设壁面出射的总二次电子服从单能分布(0)、半Maxwellian分布等.在单能电子轰击壁面的详细二次电子发射模型基础上,采用Monte Carlo方法统计发现:当入射电子服从Maxwellian分布时,绝缘壁面发射的总二次电子服从三温Maxwellian分布.进而,采用一维稳态流体鞘层模型进行对比研究,结果表明:二次电子分布函数对鞘边离子能量、壁面电势、电势及电子/离子密度分布等均具有明显影响;总二次电子服从三温Maxwellian分布时,临界空间电荷饱和鞘层无解,表明随着壁面总二次电子发射系数的增加,鞘层直接从经典鞘层结构过渡到反鞘层结构.     

电子温度各向异性对霍尔推力器BN绝缘壁面鞘层特性的影响

建立多价态多组分等离子体一维流体鞘层模型,引入电子温度各向异性系数并考虑出射电子速度分布,研究了电子温度各向异性对霍尔推力器中的BN绝缘壁面鞘层特性和近壁电子流的影响.分析结果表明,相比于纯一价氙等离子体鞘层参数,推力器中的多价态氙等离子体鞘层电势降略有降低,电子壁面损失增加,临界二次电子发射系数减小.推力器中的电子温度各向异性现象可以显著地加大出射电子能量系数,进而降低鞘层电势降,增强电子壁面相互作用.数值结果表明,空间电荷饱和机制下电子温度各向异性对鞘层空间电势分布影响显著. 关键词： 霍尔推力器 电子温度各向异性 空间电荷饱和鞘层     

Surface hydrogen incorporation and profile broadening caused bysheath expansion in hydrogen plasma immersion ion implantation

Hydrogen plasma immersion ion implantation (PIII) in conjunction with ion-cut is an efficient and economical technique to synthesize silicon-on-insulator (SOI) substrates. Unlike beam-line ion implantation, the PIII hydrogen profile usually exhibits multiple peaks because of different implanted species, such as H⁺, H₂ ⁺, and H₃⁺. In addition, a certain amount of adsorbed hydrogen exists near the surface and the hydrogen in-depth distribution is broader than that of a beam-line implant also as a result of a low-energy component. For the ion-cut process, the broadened hydrogen profile and surface hydrogen can decrease the efficiency of the blistering process, induce uneven exfoliation, and degrade the interfacial quality of the bonded wafer. Hydrogen can adsorb on the wafer surface during the “off-cycle” of the sample voltage pulse and consequently be driven in by ion mixing or diffusion. In order to reduce surface hydrogen incorporation, the implantation time must be short, and this requires an efficient cooling mechanism on the sample stage because a high ion current is needed to implant a high dose in a short time (less than 5 min). Another mechanism of profile broadening is that the expanding sheath creates low-energy ions during PIII. Our experimental and simulation data disclose that profile broadening is less severe for a shorter sample voltage pulsewidth and that good blistering characteristics can be achieved using a long pulse, in spite of a relatively long implantation time of 1 h