氮掺杂Ge2Sb2Te5相变存储器的多态存储功能

通过反应溅射的方法,制备了N掺杂的Ge2Sb2Te5(N-GST)薄膜,用作相变存储器的存储介质.研究表明,掺杂的N以GeN的形式存在,不仅束缚了Ge2Sb2Te5 (GST)晶粒的长大也提高了GST的晶化温度和相变温度.利用N-GST薄膜的非晶态、晶态面心立方相和晶态六方相的电阻率差异,能够在同一存储单元中存储三个状态,实现相变存储器的多态存储功能.     

Cu对用于高速相变存储器的Sb2Te薄膜的结构及相变的影响研究

采用原位X射线衍射仪、拉曼光谱仪和X射线反射仪分别研究了Cu-Sb₂Te 薄膜的微结构、成键结构和结晶前后的密度变化. Sb₂Te薄膜的结晶温度随着Cu含量的增加而增大. 在10 at.%和14 at.% Cu的Sb₂Te薄膜中, Cu与 Te 成键, 结晶相由六方相的Cu₇Te₄、菱形相的Sb及六方相的Sb₂Te构成. 10 at.% 和14 at.% Cu 的Sb₂Te薄膜在结晶前后的厚度变化分别约为3.2%和 4.0%, 均小于传统的Ge₂Sb₂Te₅ (GST)薄膜. 制备了基于Cu-Sb₂Te薄膜的相变存储单元, 并测试了其器件性能. Cu-Sb₂Te器件均能在10 ns的电脉冲下实现可逆SET-RESET操作. SET和RESET操作电压随着Cu含量的增加而减小. 疲劳测试结果显示, Cu 含量为10 at.%和14 at.%的PCRAM单元的循环操作次数分别达到1.3×10⁴和1.5×10⁵, RESET和SET态的电阻比值约为100. Cu-Sb₂Te可以作为应用于高速相变存储器(PCRAM)的候选材料.     

随机过程数值仿真的精度实验与分析

为了考核随机过程数值仿真中采用的混沌多项式展开,小波动态自适应网格等的可靠性和近似程度,本文构造了一个具有解析解的随机过程,随后进行数值仿真。比较了数值仿真结果与解析解,证明两者是相互一致的。说明所采用的数值仿真方法是成立和近似度是可以接受的。所进行比较的随机过程解析解是相对比较简单的,当对更复杂的情况需要进一步数值实验验证。在文中并讨论了影响数值仿真精度和增加数值仿真工作难度的因素。     

基于Cu/SiO_x/Al结构的阻变存储器多值特性及机理的研究

采用氧化硅材料构建了Cu/SiOx/Al的三明治结构阻变存储器件.用半导体参数分析仪对其阻变特性进行测量,结果表明其具有明显的阻变特性,并且通过调节限制电流,得到了四个稳定的阻态,各相邻阻态的电阻比大于10,并且具有良好的数据保持能力.在不同温度条件下对各个阻态进行电学测试及拟合,明确了不同阻态的电子传输机理不尽相同:阻态1和阻态2为欧姆传导机制,阻态3为P-F(Pool-Frenkel)发射机制,阻态4为肖特基发射机制.根据电子传输机制,建立了铜细丝导电模型并对Cu/SiOx/Al阻变存储器件各个阻态的电致阻变机制进行解释.     

激光加热过程中稳态等温相变的数值模拟

本文对激光加热过程中稳态等温相变进行了数值模拟，结果表明，激光加热所产生的熔池内的液体在表面张力与浮力的联合作用下，形成顺时针的涡旋运动；在激光加热功率密度比较小时，可以忽略对流对传热的影响；随着功率密度的加大，对流的作用增强，其影响不可忽视。     

相变光存储研究的新进展

光存储朝着高密度、大容量、高数据传输速率、多功能方向发展。可擦重写相变光存储介质和技术吸引着越来越多研究者的兴趣。本文主要综述了相变光存储原理、材料性能改进和高密度相变存储技术方面的现状和新进展     

氮掺杂Ge2Sb2Te5相变存储器的多态存储功能

通过反应溅射的方法，制备了N掺杂的Ge₂Sb₂Te₅(N-GST)薄膜，用作相变存储器的存储介质.研究表明，掺杂的N以GeN的形式存在，不仅束缚了Ge₂Sb₂Te₅ (GST)晶粒的长大也提高了GST的晶化温度和相变温度.利用N-GST薄膜的非晶态、晶态面心立方相和晶态六方相的电阻率差异，能够在同一存储单元中存储三个状态，实现相变存储器的多态存储功能. 关键词： 相变存储器 多态存储 N掺杂 2Sb₂Te₅')" href="#">Ge₂Sb₂Te₅     

相变材料模拟金属构件热特性的数值研究

通过理论分析和数值计算论证了用相变材料模拟多种常用金属构件热特性的可行性.利用相变材料模拟了厚度分别为20 mm,30 mm,50 mm和100 mm的金属板材,发现在模拟较厚的金属板材时,相变材料的低导热系数对模拟效果产生了不利影响.在此基础上,利用导热系数增强的相变材料对厚度大于100 mm金属板材进行模拟,取得了较好的模拟效果.并利用相变材料模拟了金属构件轮和管的热特性.     

有机材料的多波长共线存储研究

以全波段共线输出四个波长的Ar离子激光器作为光源,采用简并四波混频（DFWM）光路装置,对一种新合成的偶氮材料样品作了多波开共线读出存储特性研究。实现了此类有机材料的实时和永久共线读出的存储,获得了良好的照片记录。实现了多波长读出双重存储,观测到并理论解释了多重存储、多波长存储之间的竞争现象。     

Polarization readout analysis for multilevel phase change recording by crystallization degree modulation

Four different states of Si15Sb85 and Ge2Sb2Te5 phase change memory thin films are obtained by crystallization degree modulation through laser initialization at different powers or annealing at different temperatures. The polarization characteristics of these two four-level phase change recording media are analyzed systematically. A simple and effective readout scheme is then proposed, and the readout signal is numerically simulated. The results show that a high-contrast polarization readout can be obtained in an extensive wavelength range for the four-level phase change recording media using common phase change materials. This study will help in-depth understanding of the physical mechanisms and provide technical approaches to multilevel phase change recording.     

Si1Sb2Te3 phase change material for chalcogenide random access memory

This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at ~ 180℃ and changes to hexagonal structure at ~ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method. Data retention of the films was characterized as well.     

Self-compliance multilevel storage characteristic in HfO_2-based device

In this paper, the self-compliance bipolar resistive switching characteristic of an HfO_2-based memory device with Ag/HfO_2/Au structure for multilevel storage is investigated. By applying a positive voltage, the dual-step set processes corresponding to three stable resistance states are observed in the device. The multilevel switching characteristics can still be observed after 48 hours. In addition, the resistance values of all the three states show negligible degradation over 104 s,which may be useful for the applications in nonvolatile multilevel storage.     

Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage

The era of information explosion is coming and information need to be continuously stored and randomly accessed over long-term periods, which constitute an insurmountable challenge for existing data centers. At present, computing devices use the von Neumann architecture with separate computing and memory units, which exposes the shortcomings of “memory bottleneck”. Nonvolatile memristor can realize data storage and in-memory computing at the same time and promises to overcome this bottleneck. Phase-change random access memory (PCRAM) is called one of the best solutions for next generation non-volatile memory. Due to its high speed, good data retention, high density, low power consumption, PCRAM has the broad commercial prospects in the in-memory computing application. In this review, the research progress of phase-change materials and device structures for PCRAM, as well as the most critical performances for a universal memory, such as speed, capacity, and power consumption, are reviewed. By comparing the advantages and disadvantages of phase-change optical disk and PCRAM, a new concept of optoelectronic hybrid storage based on phase-change material is proposed. Furthermore, its feasibility to replace existing memory technologies as a universal memory is also discussed as well.     

阴极金属微凸起电场增强因子数值模拟

利用有限元方法对无穷大平板二极管中阴极表面金属微凸起的微观电场增强因子进行了计算研究,给出了微凸起微观电场增强因子随凸起参数的变化规律,拟合得到了微观电场增强因子的简单实用的经验表达式,并与文献中的近似公式进行了比较。模拟的结果表明,对锥状球头微凸起的电场增强因子,文献给出的近似公式误差较大,应避免使用。     

同轴插板式相移器数值模拟与实验研究

根据同轴插板式相移器的基本工作原理,对该相移器进行了数值模拟与优化设计,并重点研究了其结构工艺和相移控制方式。在此基础上研制了一个中心频率为4.1 GHz的相移器模型,并通过矢量网络分析仪进行了实验测量。测量结果表明：在4.0～4.2 GHz的频带范围内,该相移器可实现90°的相移量,相移量化精度为1°,相移精度为±１０°,相移器插损1.5 dB。     

Thermal effect of Ge_2Sb_2Te_5 in phase change memory device

The properties of Raman phonons are very important due to the fact that they can availably reflect some important physical information. An abnormal Raman peak is observed at about 558 cm-1in In film composed of In/InOx core–shell structured nanoparticles, and the phonon mode stays very stable when the temperature changes. Our results indicate that this Raman scattering is attributed to the existence of incomplete indium oxide in the oxide shell.     

A general finite element model for numerical simulation of structure dynamics

A finite element model used to simulate the dynamics with continuum and discontinuum is presented. This new approach is conducted by constructing the general contact model. The conventional discrete element is treated as a standard finite element with one node in this new method. The one-node element has the same features as other finite elements, such as element stress and strain. Thus, a general finite element model that is consistent with the existed finite element model is set up. This new model is simple in mathematical concept and is straightforward to be combined into the existing standard finite element code. Numerical example demonstrates that this new approach is more effective to perform the dynamic process analysis in which the interactions among a large number of discrete bodies and continuum objects are included.     

相变换热混合工质板翅式换热器流动与传热数值模拟

采用由SRK方程计算得出的混合工质物性参数,将具有相变两相流体物性分三部分处理,得出混合工质分段物性数据拟合曲线,并输入FLUENT软件的材料物性数据文件中,作为数值模拟物性参数数据。在上述物性数据处理的基础上,对混合工质天然气液化装置中换热器采用分段方式进行稳态数值模拟研究,得到沿长度方向一定温度下传热系数、压力梯度的变化曲线。通过与MUSE软件数据比较,计算结果有一定合理性,所得结论为有相变换热的混合工质低温板翅式换热器的设计和优化提供一定参考。     

Finite element simulation of the magneto-mechanical response of a magnetic shape memory alloy sample

Abstract

In this paper, the stress- and magnetic field-induced variant reorientation in a magnetic shape memory alloy (MSMA) sample is simulated by using the finite element method. This model is set up based on a three-dimensional setting with the whole sample and the surrounding space taken into account. A typical loading pattern is proposed on the sample. The unknowns of the model governing system include the spatial displacement vector, the scalar magnetic potential and some internal variables related to the effective magnetization vector. By considering the different properties of the unknowns, an iterative computational scheme is proposed to derive the numerical solutions. With the obtained solutions, the magneto-mechanical response of the MSMA sample under different field and stress levels can be predicted. The distributions of the variant state and the effective magnetization in the sample can also be determined. By comparing with the experimental results, it is found that the numerical solutions obtained in this model can predict the response of the MSMA sample at a quantitative level.