大气压下多脉冲均匀介质阻挡放电的研究

基于一维流体力学模型，数值计算研究了大气压下氦气中多脉冲均匀介质阻挡放电的形成原因和性质，分析讨论了所加电压频率、幅值及介质板性质等对多脉冲均匀放电的影响. 模拟结果显示，当放电间隙较小时，由于介质表面积累电荷增加，感应电场增强，在外加电压的每半个周期内，可以形成多个放电脉冲，这些脉冲相应于等时间间隔的分立击穿. 放电间隙越窄，半个周期内形成的脉冲数目越多. 所加电压频率和幅值的变化不仅影响脉冲的幅度，同时也使放电脉冲的数目发生变化，而介质层厚度及介电常数的变化对放电脉冲数目没有明显的影响. 关键词： 大气压均匀放电 介质阻挡放电 数值模拟 等离子体     

基于有机薄膜晶体管的光写入多级存储器

由于依靠不断缩小存储单元尺寸来提升单位面积存储能力的传统方法将会面临着器件尺寸的物理极限等瓶颈,人们逐渐将目光投向了能够在单一器件上实现高密度存储的多级存储器件。本文利用有机薄膜晶体管中存在的持续光电导率(PPC)效应制备了一个光写入操作的多级存储器件,有效地避免了电写入操作对器件的接触破坏性和较大功耗问题。研究了在不同功率(60,100,150μW/cm 2)和不同持续时间(50~1000 ms)700 nm光写入脉冲作用下的器件存储状态,器件在光功率为60μW/cm 2、持续时间为100 ms的光脉冲下展现出了低至0.189 nJ的极低工作功耗。通过对器件施加16个连续光写入脉冲证实器件具有16个有效的存储状态,实现了存储容量为4 bits的多级光写入存储功能。     

全耗尽绝缘体上硅氧化铪基铁电场效应晶体管存储单元单粒子效应计算机模拟研究

铁电场效应晶体管具有非挥发性、低功耗、读写速度快等优异的存储性能,是最有前景的新型半导体存储器件之一.为促进铁电场效应晶体管在辐射环境中的应用,本文利用计算机辅助设计软件对全耗尽绝缘体上硅氧化铪基铁电场效应晶体管存储单元的单粒子效应进行研究,分析了重离子不同入射位置及角度和漏极偏置电压对存储单元相关特性的影响.结果表明:重离子入射位置改变不会使氧化铪铁电层中相应的极化状态发生反向,但会影响存储单元输出电压瞬态变化,最敏感区域靠近漏-体结区域;随着重离子入射角度减小,存储单元输出电压峰值增大,读数据“0”时入射角度变化的影响更为明显;存储单元输出电压峰值受漏极偏置电压调制,读数据“1”时调制效应更为明显.本工作为全耗尽绝缘体上硅氧化铪基铁电场效应晶体管存储单元抗单粒子效应加固设计提供理论依据和指导.     

考虑相变的热弹塑性本构方程及其应用

将在热加工及热处理过程中发生相变的材料考虑为热弹塑性的多相混合物,基于连续介质物理学及含内变量的不可逆热力学,推导出考虑相变的热弹塑性本构方程.根据一组不同温度水平下的高温短时拉力试验,确定本构方程中的材料参数及其随温度的变化关系.同时,提出了考虑相变的热传导方程和计及应力影响的相变动力学方程.基于这些方程编制相应有限元分析程序,用其分析计算了1Cr12WMoV不锈钢管通的焊接残余应力分布.计算所得结果与通过X射线衍射测试的实验结果具有较好的一致性. 关键词： 相变 热弹塑性 本构方程 焊接     

外延铁电薄膜相变温度的尺寸效应

考虑外延钙钛矿型铁电薄膜内的等效应力、表面晶格变化和表面电荷引起的退极化效应等机电耦合边界条件,利用铁电薄膜系统的动态金茨堡-朗道方程(DGL),系统分析和讨论了外延铁电薄膜相变温度与临界相变厚度的尺寸效应.结果表明,铁电薄膜相变温度与临界相变厚度完全依赖于各种与薄膜厚度相关的力电耦合边界条件.也给出了BaTiO₃外延铁电薄膜相变温度在各种边界条件下随厚度的变化,从结果看出,本文的分析与结论更符合实验数据. 关键词： 尺寸效应 外延铁电薄膜 相变温度 力电耦合边界     

面心立方(001)方向AB合金薄膜表面层的有序无序相变

采用平均场近似方法对两组元面心立方合金薄膜的有序无序相转变过程进行模拟计算,结果表明,合金薄膜的有序无序相变受薄膜层数奇偶性的影响.薄膜层数奇偶性不同,会导致薄膜具有不同的相结构和热力学性质.在弱表面偏析作用下,对于偶数层薄膜,由于薄膜边界对称性破缺,对应体组分x=0.5的化学势区间,偶数层薄膜有序无序相变过程中出现了中间温度相和浸润现象.而奇数层薄膜的有序无序相变类似体材料的相变.在强表面偏析作用下,由于受表面偏析作用和有限尺寸效应影响,对应体组分x=0.5的化学势区间,奇数层薄膜中出现AB(AB)nA相,它不存在严格热力学意义上的有序无序相变.     

相变换热单元动态过程的不可逆性分析

换热单元动态过程的热力学分析可为换热器的结构设计与运行参数调整提供依据.本文根据相变换热器的基本原理与质量、能量守恒方程,将相变换热器的工作过程用微分方程来表述,建立了典型相变换热单元的动态模型,得到了换热器动态过程的换热规律,进而研究了不同结构参数下换热单元动态过程的熵产变化规律.结果 表明:与稳态过程相比,动态过程...     

黏弹性流体充模过程中凝固现象的数值模拟

建立了黏弹性流体在充模过程中带有相变的气一液两相模型,该模型分别由气、液两相的质量守恒方程、动量守恒方程、能量守恒方程描述,并通过引入Heaviside函数将气一液两相的方程组统一为一个方程组;建立了一个对型腔内熔体和气体都适用的修正的焓方法来描述充模过程中的相变,采用基于同位网格的有限体积方法对模型进行求解,水平集方法捕捉充模过程中的界面演化,模拟出了黏弹性流体在充模过程中的凝固现象,得出了充模过程中型腔内的温度、压力、第一法向应力差等随时间的变化;并讨论了型腔壁面温度、熔体温度、注射速度对充模过程中凝固现象的影响,研究结果表明:型腔壁面温度越高,凝固层越薄;熔体温度越高,凝固层越薄;注射速度越高,凝固层越薄,故提高型腔壁面温度、熔体温度、注射速度可以减少或消除型腔壁面附近的凝固层。     

多约束纳米结构的声子热导率模型研究

纳米技术的快速发展使得对微纳尺度导热机理的深入研究变得至关重要. 理论和实验都表明, 在纳米尺度下声子热导率将表现出尺寸效应. 基于声子玻尔兹曼方程和修正声子平均自由程的方法得到了多约束纳米结构的声子热导率模型, 可以描述多个几何约束共同作用下热导率的尺寸效应. 不同几何约束对声子输运的限制作用可以分开计算, 总体影响则通过马西森定则进行耦合. 对于热流方向的约束, 采用扩散近似的方法求解声子玻尔兹曼方程; 对于侧面边界约束, 采用修正平均自由程的方法计算边界散射对热导率的影响. 得到的模型能够预测纳米薄膜(法向和面向)及有限长度方形纳米线的热导率随相应特征尺寸的变化. 与蒙特卡罗模拟及硅纳米结构热导率实验值的对比验证了模型的正确性.     

氮掺杂Ge2Sb2Te5相变存储器的多态存储功能

通过反应溅射的方法,制备了N掺杂的Ge2Sb2Te5(N-GST)薄膜,用作相变存储器的存储介质.研究表明,掺杂的N以GeN的形式存在,不仅束缚了Ge2Sb2Te5 (GST)晶粒的长大也提高了GST的晶化温度和相变温度.利用N-GST薄膜的非晶态、晶态面心立方相和晶态六方相的电阻率差异,能够在同一存储单元中存储三个状态,实现相变存储器的多态存储功能.     

Self-compliance multilevel storage characteristic in HfO_2-based device

In this paper, the self-compliance bipolar resistive switching characteristic of an HfO_2-based memory device with Ag/HfO_2/Au structure for multilevel storage is investigated. By applying a positive voltage, the dual-step set processes corresponding to three stable resistance states are observed in the device. The multilevel switching characteristics can still be observed after 48 hours. In addition, the resistance values of all the three states show negligible degradation over 104 s,which may be useful for the applications in nonvolatile multilevel storage.     

SPICE modeling of memristors with multilevel resistance states

With CMOS technologies approaching the scaling ceiling, novel memory technologies have thrived in recent years, among which the memristor is a rather promising candidate for future resistive memory (RRAM). Memristor’s potential to store multiple bits of information as different resistance levels allows its application in multilevel cell (MCL) technology, which can significantly increase the memory capacity. However, most existing memristor models are built for binary or continuous memristance switching. In this paper, we propose the simulation program with integrated circuits emphasis (SPICE) modeling of charge-controlled and flux-controlled memristors with multilevel resistance states based on the memristance versus state map. In our model, the memristance switches abruptly between neighboring resistance states. The proposed model allows users to easily set the number of the resistance levels as parameters, and provides the predictability of resistance switching time if the input current/voltage waveform is given. The functionality of our models has been validated in HSPICE. The models can be used in multilevel RRAM modeling as well as in artificial neural network simulations.     

Polarization readout analysis for multilevel phase change recording by crystallization degree modulation

Four different states of Si15Sb85 and Ge2Sb2Te5 phase change memory thin films are obtained by crystallization degree modulation through laser initialization at different powers or annealing at different temperatures. The polarization characteristics of these two four-level phase change recording media are analyzed systematically. A simple and effective readout scheme is then proposed, and the readout signal is numerically simulated. The results show that a high-contrast polarization readout can be obtained in an extensive wavelength range for the four-level phase change recording media using common phase change materials. This study will help in-depth understanding of the physical mechanisms and provide technical approaches to multilevel phase change recording.     

Three-Dimensional Simulations of RESET Operation in Phase-Change Random Access Memory with Blade-Type Like Phase Change Layer by Finite Element Modeling

An optimized device structure for reducing the RESET current of phase-change random access memory(PCRAM)with blade-type like(BTL) phase change layer is proposed.The electrical thermal analysis of the BTL cell and the blade heater contactor structure by three-dimensional finite element modeling are compared with each other during RESET operation.The simulation results show that the programming region of the phase change layer in the BTL cell is much smaller,and thermal electrical distributions of the BTL cell are more concentrated on the TiN/GST interface.The results indicate that the BTL cell has the superiorities of increasing the heating efficiency,decreasing the power consumption and reducing the RESET current from 0.67 mA to 0.32 mA.Therefore,the BTL cell will be appropriate for high performance PCRAM device with lower power consumption and lower RESET current.     

Multi‐bit storage in reset process of Phase Change Access Memory (PRAM)

A Phase Change Access Memory (PRAM) cell with stacked phase‐change layers and heater layers is prepared. Multi‐bit storage in the reset process of the PRAM is realized by this stacked structure including phase‐change layers with uniform thickness and heater layers with different thickness. The thermal simulation results show three phase‐change layers in three temperature zones, and they will transform from polycrystalline to amorphous state layer by layer. There are four levels of resistance appearing in the R –V characteristics, and 2‐bit storage is realized. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Simulation of SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling

A three-dimensional finite element model for phase change random access memory （PCRAM） is established for comprehensive electrical and thermal analysis during SET operation. The SET behaviours of the heater addition structure （HS） and the ring-type contact in bottom electrode （RIB） structure are compared with each other. There are two ways to reduce the RESET current, applying a high resistivity interracial layer and building a new device structure. The simulation resuIts indicate that the variation of SET current with different power reduction ways is little. This study takes the RESET and SET operation current into consideration, showing that the RIB structure PCRAM cell is suitable for future devices with high heat efficiency and high-density, due to its high heat efficiency in RESET operation.     

铝纳米颗粒的热物性及相变行为的分子动力学模拟

采用分子动力学方法模拟了纳米金属铝在粒径为0.8-3.2 nm 时的熔点、密度和声子热导率的变化, 研究了粒径为1.6 nm的铝纳米颗粒的密度、比热和声子热导率随温度的变化. 采用原子嵌入势较好地模拟了纳米金属铝的热物性及相变行为, 根据能量-温度曲线和比热容-温度曲线对铝纳米颗粒的相变温度进行了研究, 并利用表面能理论、尺寸效应理论对铝纳米颗粒熔点的变化进行了分析. 随着纳米粒径的不断增大, 铝纳米颗粒的熔点呈递增状态, 当粒径在2.2-3.2 nm时, 熔点的增幅减缓, 但仍处于递增趋势. 随着纳米粒径的增大, 铝纳米颗粒的密度呈单调递减, 热导率则呈线性单调递增, 且热导率的变化情况符合声子理论. 随着温度的升高, 粒径为1.6 nm的铝纳米颗粒的密度、热导率均减小. 该模拟从微观原子角度对纳米材料的热物性进行了研究, 对设计基于铝纳米颗粒的相变材料具有指导意义.     

Thermal effect of Ge_2Sb_2Te_5 in phase change memory device

The properties of Raman phonons are very important due to the fact that they can availably reflect some important physical information. An abnormal Raman peak is observed at about 558 cm-1in In film composed of In/InOx core–shell structured nanoparticles, and the phonon mode stays very stable when the temperature changes. Our results indicate that this Raman scattering is attributed to the existence of incomplete indium oxide in the oxide shell.     

Variability and Self-Organization in Nanosystems

In supersaturated media nanoparticles grow with fluctuating rate. On a surface of growing nanoparticles a mechanism of synchronization of molecular fluctuations operates increasing their scale up to macroscopic one. Thereof the kinetic equation for states distribution function of nanoparticles approaches the Fokker–Planck equation that is experimentally established on an example of nanoparticles of different nature. In a series of suspensions and aerosols, where the ordered aggregates of nanoparticles are formed, aggregation is multistage process, and at each stage the change of a size distribution function of aggregates is also described by the Fokker–Planck equation. Multistage aggregation is completed by appearance of the particles in system with multilevel hierarchical texture having tendency to accept polyhedral shape. Aforementioned features of nanosystems can be treated as development of variability and ability of systems to self-organization.     

Super-Resolution with a Photochromic Mask Layer in an Optical Memory

The possibility of a super-resolution optical memory using a photochromic mask layer was theoretically discussed. An equation which estimates the transmittance change of the mask layer was derived. The numerical simulation based on the equation showed that the reflectance increase of the layer by photo-irradiation is nonlinear when the optical density of the layer is high. The nonlinear response decreased the crosstalk in adjacent recording tracks and improved the MTF (modulation transfer function) characteristics, resulting in a higher recording density.