等离子体浸没离子注入非导电聚合物的适应性及栅网诱导效应的研究

本文建立了绝缘材料等离子体浸没离子注入过程的动力学Particle-in-cell(PIC)模型, 将二次电子发射系数直接与离子注入即时能量建立关联, 研究了非导电聚合物厚度、介电常数和二次电子发射系数对表面偏压电位的影响规律以及栅网诱导效应. 研究结果表明: 非导电聚合物较厚时, 表面自偏压难以实现全方位离子注入, 栅网诱导可以间接为非导电聚合物提供偏压, 并抑制二次电子发射, 为厚大非导电聚合物表面等离子体浸没离子注入提供了有效途径.     

表面凹陷对等离子体浸没离子注入均匀性的影响

利用二维流体模型和数值计算方法模拟了等离子体浸没离子注入（ＰⅢ）Ｋ ,具有圆弧凹槽的平面靶周围的鞘层扩展情况,计算了鞘层扩展过程中的电热分布、离子速度和离子密度变化获得了沿靶表面的离子入射角度和注入剂量的分布情况,为等离子体浸没离子注入处理复杂形状靶提供了理论基础。     

Secondary-Electron Emission Effects in Plasma Immersion Ion Implantation with Dielectric Substrates

Using a dynamic sheath model,we have studied the secondary-electron emission effects at one-dimensional planar dielectric surface in plasma immersion ion implantation.The temporal evolution of the sheath thickness,the surface potential of dielectric,and the ions dose accumulated on the dielectric surface are obtained.The numerical results demonstrate that the charging effects are greatly enhanced by the secondary electron emission effects,so the sheath thickness becomes thinner,the surface potential of dielectric decreases fast and the ions dose accumulated on the dielectric surface significantly increases.     

介质靶表面的充电效应对等离子体浸没离子注入过程中鞘层特性的影响

针对等离子体浸没离子注入技术在绝缘体表面制备硅薄膜工艺，采用一维脉冲鞘层模型描述介质靶表面的充电效应对鞘层厚度、注入剂量及靶表面电位等物理量的影响.数值模拟结果表明：随着等离子体密度的增高，表面的充电效应将导致鞘层厚度变薄、表面电位下降以及注入剂量增加，而介质的厚度对鞘层特性的影响则相对较小. 关键词： 等离子体浸没离子注入 脉冲鞘层 绝缘介质 充电效应     

PSⅡ技术中考虑靶表面二次电子发射的等离子体鞘层演变

本文建立了ＰＳⅡ技术中靶表面有二次电子发射的等离子体鞘层演变平板模型。在某些简化下，对随时间变化的鞘层边界位置和速度作了计算。计算表明，靶表面二次电子发射对鞘层演变影响很小，可忽略不计，这跟是相符的。     

脉冲偏压上升沿特性对等离子体浸没离子注入鞘层扩展动力学的影响

等离子体浸没离子注入(PIII)是用于材料表面改性的一种廉价高效、非视线的技术.采用等离子体粒子模型，通过假设电子密度服从Boltzmann分布，求解Poisson方程和Newton方程，跟踪离子在等离子体鞘层中的运动形态及特性并进行统计分析，研究了不同上升速率和形状的6种波形上升沿对鞘层时空演化、离子注入能量和剂量的影响.结果表明，在PIII过程中，脉冲上升沿影响了等离子体鞘层的扩展，且不同波形诱导的鞘层厚度间存在最大差值.电场强度在鞘层的外边缘区域存在陡降区，离子的运动为非匀加速过程.可以通过调整脉冲 关键词： 等离子体浸没离子注入 鞘层 粒子模型 上升沿     

增强辉光放电等离子体离子注入的三维PIC／MC模拟

采用三维粒子模拟／蒙特卡洛模型自洽地模拟了增强辉光放电等离子体离子注入过程中离子产生和注入,获得了放电空间的离子总数、电势分布、等离子体密度分布和离子入射剂量等信息．模拟结果表明,5μs时鞘层达到稳定扩展,15μs时离子的产生与注入达到平衡,证实了增强辉光放电等离子体离子注入能在一定条件下实现白持的辉光放电．注入过程中,在点状阳极正下方存在一个高密度的等离子体区域,证实了电子聚焦效应．除靶台边缘外,离子的注入速率稳定且入射剂量均匀．脉冲负偏压提高时注入速率增加但入射剂量的均匀性变差．     

等离子体浸没离子注入制备黑硅抗反射层及其光学特性研究

表面织构是一种有效降低表面反射率、提高硅基太阳能电池效率的方法. 采用等离子体浸没离子注入的方法制备了黑硅抗反射层.分别通过原子力显微镜和紫外-可见-近红外分光光度计对黑硅样品表面形貌和反射率进行分析, 结果发现黑硅样品表面布满了高度为0—550 nm的山峰状结构, 结构层中硅体积分数和折射率随抗反射层厚度增加而连续降低. 在300—1000 nm波段范围内,黑硅样品的加权平均反射率低至6.0%. 通过传递矩阵方法对黑硅样品反射谱进行模拟,得到的反射谱与实测反射谱非常符合.     

轴承滚珠等离子体浸没离子注入过程的数值模拟

 利用轴对称PIC模型对轴承滚珠等离子体浸没离子注入（PIII）过程进行了数值模拟，对归一化电势的扩展情况进行了研究。在滚珠批量处理过程中，为了避免相邻滚珠周围鞘层的相互重叠对注入均匀性造成不良影响，对滚珠在靶台上摆放的最小距离进行了数值计算，计算结果表明：在电压为－40kV, 氮等离子体密度为4.8×10⁹ cm^-3，脉冲宽度为10μs时，滚珠摆放的最小距离应大于34.18cm。分析了滚珠圆周方向注入剂量的分布情况，针对静止滚珠改性处理后剂量分布很不均匀的问题，通过旋转靶台使滚珠注入均匀性明显得到改善。利用朗谬尔探针测量了滚珠周围鞘层扩展的情况测量，模拟结果和实验测量结果相吻合，最大相对误差小于8.4 %。     

Plasma immersion ion implantation for silicon processing

Plasma Immersion Ion Implantation (PIII) is a technology which is currently widely investigated as an alternative to conventional beam line implantation for ultrashallow doping beyond the 0.15 μm technology. However, there are several other application areas in modern semiconductor processing. In this paper a detailed discussion of the PIII process for semiconductors and of actual as well as future applications is given. Besides the well known advantages of PIII — fast process, implantation of the whole surface, low cost of ownership — several peculiarities — like spread of the implantation energy due to finite rise time or collisions, no mass separation, high secondary electron emission — must be mentioned. However, they can be overcome by adjusting the system and the process parameters. Considering the applications, ultrashallow junction formation by PIII is an established industrial process, whereas SIMOX and Smart‐Cut by oxygen and hydrogen implantation are current topics between research and introduction into industry. Further applications of PIII, of which some already are research topics and some are only investigated by conventional ion implantation, include seeding for metal deposition, gettering of metal impurities, etch stop layers and helium implantation for localized lifetime control.     

氮离子注入对类球状微米金刚石聚晶膜的影响

利用微波等离子体化学气相沉积法,在覆盖金属钛层的陶瓷衬底上制备出类球状微米金刚石聚晶膜,后对膜的表面进行氮离子的注入.通过扫描电子显微镜、拉曼光谱、X射线衍射谱及二级结构场发射测试,对膜进行了注入前后的分析.氮离子注入后场致电子发射的效果变强,这可能是氮离子的注入增加了类球状微米金刚石聚晶膜表面的缺陷度,从而增加了价带和导带间的缺陷能级,使电子更容易跃迁到高能级上,提高了场致电子的发射效果.     

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基于感应耦合等离子体(ICP)技术设计了一套用于在硅基片上制作形成超浅结的等离子体浸没注入(PIII)系统。该ICP PIII系统工作腔室为圆柱形,采用射频功率源,注入偏压源为一脉冲直流电压源,系统与Langmiur探针相连。探针诊断结果表明,该系统的等离子体离子密度达到1017m-3,离子密度径向均匀性达到3.53%。硼和磷的超低能注入试验的二次离子质谱测试结果表明：掺杂离子注入深度在10nm左右,最浅的注入深度为8.6nm(在注入离子密度为1018cm-3时);注入离子剂量达到了1015cm-2以上;掺杂离子浓度峰值在表面以下;注入陡峭度达到了2.5nm/decade。     

等离子体浸没注入超低能注入掺杂研究

A plasma immersion ion implantation(PIII) system based on inductively coupled plasma(ICP) technology was designed. The PIII system had a cylindrical chamber, and a radio frequency(RF) power was used to sustain discharge and a pulsed voltage source was provided to bias the wafer. The RF power was coupled into chamber by a non-coplanar two-turn circular structure coil. A Langmuir probe was connected to the PIII system to diagnose the plasma parameters. The probe diagnosis indicated that plasma ion density of the system achieves 10¹⁷m^-3, the uniformity of the ion density along radial direction achieves 3.53%. Boron (B) and phosphorus (P) doping experiments were performed on the system. Results from second ion mass spectrum (SIMS) tests showed that the measured injection depth is about 10nm and the shallowest is 8.6 nm (at 10¹⁸cm^-3), the peak ion concentration is below the surface of the wafer, and the ion dose reaches above10¹⁵cm^-2 and the abrupt 2.5 nm/decade.     

Realization of conformal doping on multicrystalline silicon solar cells and black silicon solar cells by plasma immersion ion implantation

Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation （PⅢ） technique. The non-uniformity of emitter doping is lower than 5 %. The secondary ion mass spectrometer profile indicates that the PⅢ technique obtained 100-rim shallow emitter and the emitter depth could be impelled by furnace annealing to 220 nm and 330 nm at 850 ℃ with one and two hours, respectively. Furnace annealing at 850 ℃ could effectively electrically activate the dopants in the silicon. The efficiency of the black silicon solar cell is 14.84% higher than that of the mc-silicon solar cell due to more incident light being absorbed.