空位缺陷对碳纳米管/石墨烯纳米带导热的影响

本文利用分子动力学方法研究空位缺陷对碳纳米管和石墨烯纳米带导热特性的影响,并分析声子态密度、声子模式参与率探究导热机理。研究表明:空位缺陷引起碳管和纳米带热导率降低,在200～600 K的温度范围内,碳管和纳米带热导率的下降幅度分别可达47.57%、38.84%.碳管和纳米带热导率的降低归因于声子态密度衰减且声子模式参与率较小.由于边界散射作用削弱了缺陷对纳米带热导率的影响,纳米带热导率的降低幅度低于碳管.     

基于分子动力学的石墨炔纳米带空位缺陷的导热特性

空位缺陷石墨炔比完整石墨炔更贴近实际材料,而空位缺陷的多样性可导致更丰富的导热特性,因此模拟各种空位缺陷对热导率的影响显得尤为重要.采用非平衡分子动力学方法,通过在纳米带长度方向上施加周期性边界条件,基于AIREBO(adaptive intermolecular reactive empirical bond order)势函数描述碳-碳原子间的相互作用,模拟了300 K时单层石墨炔纳米带乙炔链上单空位缺陷和双空位缺陷以及苯环上单空位缺陷对其热导率的影响,利用Fourier定律计算热导率.模拟结果表明,对于几十纳米尺度范围内的石墨炔纳米带热导率,1)由于声子的散射集中和声子倒逆过程增强,与完美无缺陷的石墨炔纳米带相比,空位缺陷会导致石墨炔纳米带热导率的下降;2)由于声子态密度匹配程度高低的不同,相比于乙炔链上的空位缺陷,苯环的空位缺陷对石墨炔纳米带热导率影响更大,乙炔链上空位缺陷数量对石墨炔纳米带热导率的影响明显;3)由于尺寸效应问题,随着长度增加,石墨炔纳米带热导率会相应增大.本文的研究可为在一定尺度下进行石墨炔纳米带热导率的调控问题提供参考.     

不同硼掺杂几何形态下石墨烯纳米带热导率与热整流的分子动力学研究

通过非平衡态分子动力学方法,研究了锯齿形石墨烯纳米带中掺杂原子硼的两种不同位置排列（三角形硼掺杂和平行硼掺杂）对热导率和热整流的影响并从理论上分析了其变化的原因。研究表明这两种硼掺杂模型在不同温度下导致石墨烯纳米带热导率大约54%-63%的下降;同时发现平行硼掺杂结构对热传递的抑制作用强于三角形硼掺杂结构;硼掺杂结构降低热导率的作用随着温度的升高逐渐减小;三角形硼掺杂结构两个方向上的热导率值具有较大差异,这种结构下的热整流随着温度的上升呈现减弱的趋势;而平行硼掺杂结构两个方向上的热导率值近乎相等,热整流现象表现不明显.     

不同硼掺杂几何形态下石墨烯纳米带热导率与热整流的分子动力学研究

通过非平衡态分子动力学方法,研究了锯齿形石墨烯纳米带中掺杂原子硼的两种不同位置排列（三角形硼掺杂和平行硼掺杂）对热导率和热整流的影响并从理论上分析了其变化的原因。研究表明这两种硼掺杂模型在不同温度下导致石墨烯纳米带热导率大约54％－63％的下降;同时发现平行硼掺杂结构对热传递的抑制作用强于三角形硼掺杂结构;硼掺杂结构降低热导率的作用随着温度的升高逐渐减小;三角形硼掺杂结构两个方向上的热导率值具有较大差异,这种结构下的热整流随着温度的上升呈现减弱的趋势;而平行硼掺杂结构两个方向上的热导率值近乎相等,热整流现象表现不明显。     

单空位缺陷诱导的扶手椅型石墨烯纳米带电学性能的转变

本文基于密度泛函理论的第一性原理计算了单空位缺陷对 扶手椅型石墨烯纳米带电学特性的影响. 计算结果表明: 当单空位位于纳米带边缘位置时, 系统结构最稳定. 不同位置上单空位缺陷的引入都会使得原本为半导体的本征 扶手椅型石墨烯纳米带变成金属性; 随着单空位浓度的减小, 其对纳米带能带结构的影响逐渐减弱; 随着纳米带宽度的增大, 表征其金属性的特征值表现出震荡性的减弱. 单空位缺陷诱导的扶手椅型纳米带的半导体特性到金属特性的转变为石墨烯在 电子器件中的应用提供了理论指导. 关键词： 扶手椅型石墨烯纳米带 单空位缺陷 电学性能     

金掺杂锯齿型石墨烯纳米带的电磁学特性研究

本文采用基于密度泛函理论的第一性原理计算了金原子填充锯齿型石墨烯纳米带 (ZGNRs)中双空位结构的电磁学特性. 计算结果表明: 边缘位置是金原子的最稳定掺杂位置, 杂质原子的引入导致掺杂边缘的磁性被抑制, 不过掺杂率足够大时, 掺杂边缘的磁性反而恢复了. 金掺杂纳米带的能带结构对掺杂率敏感: 随着掺杂率的增大, 掺杂纳米带分别表现半导体特性、半金属特性以及金属特性. 本文的计算表明金原子掺杂可以调制ZGNR的磁性以及能带特性, 为后续实验起指导作用, 有利于推动石墨烯材料在自旋电子学方面的应用.     

氮掺杂对石墨烯摩擦学特性影响的分子动力学模拟

掺氮石墨烯具有良好的应用前景,但对其摩擦学特性的研究仍较为缺乏.本文采用分子动力学方法研究了氮掺杂对石墨烯摩擦学特性的影响.结果表明在公度、非公度的界面结构下,氮掺杂对石墨烯摩擦特性的影响呈现相反的趋势.界面结构为公度状态时,氮原子的引入导致了局部非公度状态,因而界面势垒降低、摩擦减小.界面公度性的改变、层间氮原子和碳原子的范德瓦耳斯力作用对界面摩擦的影响相反,在二者的共同作用下,随氮掺杂比例的升高,掺氮石墨烯体系的界面摩擦力呈现先增大再减小的趋势.界面结构为非公度状态时,氮原子的引入对界面摩擦的影响主要体现在原子类型的变化,界面摩擦随氮掺杂比例的增大而增大.存在空位缺陷的石墨烯体系的摩擦最大,掺杂氮原子对于降低缺陷石墨烯体系的摩擦具有积极意义.     

空位及氮掺杂二维ZnO单层材料性质:第一性原理计算与分子轨道分析

采用基于密度泛函理论的第一性原理计算方法,系统地研究了带缺陷的二维类石墨烯结构的ZnO(graphenelike-ZnO,g-ZnO)的几何结构、电子结构、磁性性质和吸收光谱性质.研究的缺陷类型包括锌原子空位(VZn_g-ZnO)、氧原子空位(VO_g-ZnO)、氮原子取代氧原子(NO_g-ZnO)和表面吸附氮原子(N@g-ZnO).研究发现:NO_g-ZnO体系和N@g-ZnO体系形变较小,而空位体系会引入较大的形变;g-ZnO本身无磁矩,引入Zn空位后,VZn_g-ZnO体系总磁矩为2.00μB;VO_g-ZnO体系无磁矩,但N掺杂后的NO_g-ZnO体系和氮吸附的N@g-ZnO体系的总磁矩分别为1.00μB和3.00μB.利用掺杂体系的局域对称性和分子轨道理论分析了杂质能级和磁矩的产生原因,并且通过分析光吸收曲线得知,引入空位缺陷或者N原子掺杂,可以有效增强g-ZnO单层材料的光吸收性能.研究结果对系统地理解g-ZnO及其缺陷模型的性质有重要意义,可以为发展基于g-ZnO的纳米电子器件和光催化应用提供理论参考.     

铂掺杂扶手椅型石墨烯纳米带的电学特性研究

本文采用基于密度泛函理论(DFT)的第一性原理计算了铂原子填充扶手椅型石墨烯纳米带(AGNR)中双空位结构的电学性能.计算结果表明: 通过控制铂原子的掺杂位置, 可以实现纳米带循环经历小带隙半导体—金属—大带隙半导体的相变过程; 纳米带边缘位置是铂原子掺杂的最稳定位置, 边缘掺杂纳米带的带隙值随宽度的变化与本征AGNR一样可用三簇曲线表示, 但在较大宽度时简并成两条曲线, 一定程度上抑制了带隙值的振荡; 并且铂原子边缘掺杂导致宽度系数N_a = 3p和3p + 1(p是一个整数)的几个较窄纳米带的带隙中出现杂质能级, 有效地降低了其过大的带隙值. 此外, 铂掺杂AGNR的能带结构对掺杂浓度不是很敏感, 从而降低了对实验精度的挑战. 本文的计算有利于推动石墨烯纳米带在纳米电子学方面的应用.     

Na在B掺杂的空位石墨烯上吸附性能的第一性原理研究

采用基于密度泛函理论的第一性原理方法,研究了本征石墨烯和B掺杂的空位石墨烯吸附Na原子的电荷密度、吸附能、态密度、储存量以及电极电压.结果表明,两种石墨烯中,Na原子的最佳吸附位置都是H位.B掺杂的空位石墨烯对Na原子的吸附能是-2.08 eV,比本征石墨烯对Na原子的吸附能(-0.71eV)低很多.B掺杂的空位石墨烯中Na原子与B原子发生轨道杂化,本征石墨烯中没有杂化现象.B掺杂的空位石墨烯能够吸附12个Na原子,较本征石墨烯多.因此,B掺杂的空位石墨烯更适合储钠.     

空位缺陷对金属基外延石墨烯态密度和电导率的影响

考虑到空位缺陷的存在和原子非简谐振动,以铜、镍基外延石墨烯为例, 研究了金属基外延石墨烯空位缺陷浓度和态密度以及电导率随温度的变化规律,探讨了空位缺陷的影响。结果表明：(1) 空位缺陷浓度随温度升高而非线性增大,外延石墨烯的空位缺陷浓度及其随温度的变化率均大于石墨烯; (2) 与石墨烯相同,金属基外延石墨烯的态密度变化曲线对电子能量为0为对称,但空位缺陷的存在使态密度在电子能量为零时的值不为零,空位缺陷对导带态密度的影响大于价带;态密度随空位缺陷浓度的增大而线性减小,但减小幅度不大,而温度对石墨烯态密度几乎无影响;（3）金属基外延石墨烯的电导率近似等于电子声子相互作用贡献的电导率,并随温度升高而非线性减小;空位缺陷的存在使电导率有所减小,但只在较高温度下才明显。原子非简谐振动情况的电导率稍大于简谐近似的电导率,温度愈高,两者电导率的差愈大,即非简谐效应愈显著。     

Effect of triangular vacancy defect on thermal conductivity and thermal rectification in graphene nanoribbons

We investigate the thermal transport properties of armchair graphene nanoribbons (AGNRs) possessing various sizes of triangular vacancy defect within a temperature range of 200–600 K by using classical molecular dynamics simulation. The results show that the thermal conductivities of the graphene nanoribbons decrease with increasing sizes of triangular vacancy defects in both directions across the whole temperature range tested, and the presence of the defect can decrease the thermal conductivity by more than 40% as the number of removed cluster atoms is increased to 25 (1.56% for vacancy concentration) owing to the effect of phonon–defect scattering. In the meantime, we find the thermal conductivity of defective graphene nanoribbons is insensitive to the temperature change at higher vacancy concentrations. Furthermore, the dependence of temperatures and various sizes of triangular vacancy defect for the thermal rectification ration are also detected. This work implies a possible route to achieve thermal rectifier for 2D materials by defect engineering.     

Interlayer vacancy effects on the phonon modes in AB stacked bilayer graphene nanoribbon

We explore the effects of interlayer vacancy defects on the vibrational properties of Bernal (AB) stacking bilayer armchair graphene nanoribbons (BiAGNRs) using the forced vibrational method. It is observed that the Raman active longitudinal optical (LO) phonon of BiAGNR is shifted downward with the decrease of the ribbon width and an increase of the vacancy concentrations. We find that vacancies induce some new peaks in the low frequency regime of the phonon density of states. Our calculated typical mode patterns elucidate that the localized transverse optical phonon at the K-point is shifted towards the defect sites from the edges with increased vacancy concentrations. In addition, the impact of defect induced phonon modes on the specific heat capacity and thermal conductivity of BiAGNRs are discussed. These results present a new way of understanding the heat dissipation phenomena of graphene-based high-performance nanodevices and to clarify the Raman and the experiments related to the phonon properties.     

Nitrogen doping and curvature effects on thermal conductivity of graphene: A non-equilibrium molecular dynamics study

In this study, the effects of nitrogen atom substitution and curvature on the thermal conductivity of graphene are studied using non-equilibrium molecular dynamics (NEMD) simulations. Using the optimized Tersoff potential proposed by Lindsay and Broido [L. Lindsay, D.A. Broido, Phys. Rev. B 82 (2010) 205441], the predicted thermal conductivity of graphene is close to the experimental range. It was observed that only 1% concentration of nitrogen doping in graphene decreases the thermal conductivity of graphene by more than 50% and removes its chirality dependency. Our simulations also show that graphene is a high flexible structure and suggest limited curvature effects on its thermal conductivity.     

The effects of vacancy defects and nitrogen doping on the thermal conductivity of armchair (10, 10) single-wall carbon nanotubes

The influence of vacancy defects and nitrogen doping on the thermal conductivity of typical armchair (10, 10) single-walled carbon nanotubes is investigated using molecular dynamics (MD) simulation. The second-generation reactive empirical bond order potential and Tersoff potential are used to describe the interatomic interactions and the thermal conductivities are calculated using the Müller-Plathe approach (also called non-equilibrium MD simulation). Vacancy defects decrease the thermal conductivity whereas the substitution of nitrogen at vacancy sites improves the thermal conductivity. Quantum correction of the calculated results produces a thermal conductance temperature dependence that is in qualitative agreement with experimental data.     

Effects of doping, Stone Wales and vacancy defects on thermal conductivity of single-wall carbon nanotubes

The thermal conductivity of carbon nanotubes with certain defects (doping, Stone-Wales, and vacancy) is investigated by using the non-equilibrium molecular dynamics method. The defective carbon nanotubes (CNTs) are compared with perfect tubes. The influences of type and concentration of the defect, length, diameter, and chirality of the tube, and the ambient temperature are taken into consideration. It is demonstrated that defects result in a dramatic reduction of thermal conductivity. Doping and Stone-Wales (SW) defects have greater effect on armchair tubes, while vacancy affects the zigzag ones more. Thermal conductivity of the nanotubes increases, reaches a peak, and then decreases with increasing temperature. The temperature at which the thermal conductivity peak occurs is dependent on the defect type. Different from SW or vacancy tubes, doped tubes are similar to the perfect ones with a sharp peak at the same temperature. Thermal conductivity goes up when the tube length grows or diameter declines. It seems that the length of thermal conductivity convergence for SW tubes is much shorter than perfect or vacancy ones. The SW or vacancy tubes are less sensitive to the diameter change, compared with perfect ones.     

Effect of isotope doping on phonon thermal conductivity of silicene nanoribbons: A molecular dynamics study

Silicene, a silicon analogue of graphene, has attracted increasing research attention in recent years because of its unique electrical and thermal conductivities. In this study, phonon thermal conductivity and its isotopic doping effect in silicene nanoribbons(SNRs) are investigated by using molecular dynamics simulations. The calculated thermal conductivities are approximately 32 W/mK and 35 W/mK for armchair-edged SNRs and zigzag-edged SNRs, respectively, which show anisotropic behaviors. Isotope doping induces mass disorder in the lattice, which results in increased phonon scattering, thus reducing the thermal conductivity. The phonon thermal conductivity of isotopic doped SNR is dependent on the concentration and arrangement pattern of dopants. A maximum reduction of about 15% is obtained at 50% randomly isotopic doping with ~(30)Si. In addition, ordered doping(i.e., isotope superlattice) leads to a much larger reduction in thermal conductivity than random doping for the same doping concentration. Particularly, the periodicity of the doping superlattice structure has a significant influence on the thermal conductivity of SNR. Phonon spectrum analysis is also used to qualitatively explain the mechanism of thermal conductivity change induced by isotopic doping. This study highlights the importance of isotopic doping in tuning the thermal properties of silicene, thus guiding defect engineering of the thermal properties of two-dimensional silicon materials.     

孔洞缺陷对二维石墨烯/氮化硼横向异质结热传导的调控

本文采用孔洞缺陷来实现对二维石墨烯/氮化硼横向异质结热导率的调控.平衡态分子动力学(EMD)计算结果表明,界面孔洞的引入会降低二维石墨烯/氮化硼横向异质结的热导率.相较于有序的孔洞分布,无序的孔洞分布能够更有效地降低异质结的热导率,这一现象可通过声子安德森局域化来解释.孔洞缺陷的存在导致声子的频率和波失发生变化,从而使声子散射变得更加频繁,孔洞随机分布时,则导致声子波在材料中发生多次反射和散射,最终形成局域振动模式.本研究揭示了孔洞缺陷降低二维石墨烯/氮化硼横向异质结热导率的物理机制,对二维热电材料的结构设计有一定的指导意义.     

Artificially controlled synthesis of graphene intramolecular heterojunctions for phonon engineering

Because phonons are the main carriers for graphene heat transfer, modifying the dynamic properties of the crystal lattice by isotopes modulates the phonon behavior and alters the thermal properties. Here we demonstrate an artificially controlled texture synthesis of ¹²C‐graphene/¹³C‐graphene heterostructures via chemical vapor deposition and an O₂ plasma etching. The electrical and thermal properties of the graphene across the heterojunction show that ¹²C‐graphene and ¹³C‐ graphene are electronically connected as resistors in series, while the thermal conductivity across the junction is dramatically reduced due to the suppressed phonon propagation, which causes the conductivity across the junction to be lower than that of graphene sheets with randomly mixed isotopes. These findings should help realize novel two‐dimensional graphene thermoelectric devices where phonon modulation controls the electrons and heat transport independently. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)