外场作用下铁电/铁磁双层膜的极化磁化性质

建立了铁电/铁磁双层膜模型,铁电层的电矩用连续标量描述,而铁磁层的自旋应用经典矢量描述.利用蒙特卡罗方法模拟了体系的热力学性质和极化、磁化行为.给出了零场下体系的内能、比热、极化和磁化随温度变化的关系,并分别研究了体系在外磁场和外电场下的极化和磁化行为.模拟结果表明,双层膜体系的内能、比热、极化和磁化性质因层间耦合系数的不同而明显不同,当界面耦合较弱时,双层膜表现出各自的热力学性质,当层间耦合增强到一定程度时,双层膜耦合为一个整体,表现出统一的热力学性质.该双层膜在外场中形成电滞回线和磁滞回线,并表现出偏置特性,界面耦合强度和温度影响滞后回线和偏置现象.     

铁电磁体Pb(Fe1/2Nb1/2)O3相变特征

借助与示差扫描量热法、磁化率测量、电子自旋共振、铁电与介电性质测量及电子衍射系统地研究了Pb(Fe_1/2Nb_1/2)O₃(PFN)的电、磁性质和相变特征．结果表明发生在380K附近的顺电－铁电转变和发生在145K附近的顺磁 反铁磁转变分别为一级相变和二级相变或弱一级相变．在室温下,PFN的剩余极化与矫顽场分别为11.5μC/cm²和3.04kV/cm.介电测量表明PFN的顺电-铁电相变为弥散型相变．其弥散指数为1.62.电子衍射表明Fe³⁺与Nb⁵⁺离子在B位置上是无序分布的,正是这种与无序分布相关联的成分涨落导致铁电相变的弥散性. 关键词：     

铁电分子场与Onsager关系

在考虑体系内部相互作用非均匀性的基础上,从不可逆过程热力学的角度,在铁电领域重新引入“分子场”的概念,并给出了“分子场”所满足的热力学方程及物性方程.对铁电相变中的局域性质作了深入探讨 关键词： 分子场 局域性 铁电相变     

La调节Pb(Zr,Sn,Ti)O_3反铁电陶瓷的相变与电学性质

利用X射线衍射、弱场介电温度谱、强场极化强度研究了不同La含量(Pb1-xLa2x3)(Zr06Sn03Ti01)O3(000≤x≤012)(PLZSnT)陶瓷的相变与电学特性.实验发现,随La含量增大,室温下材料由铁电三方相(x=000)转变为反铁电四方相(003≤x≤009)和立方相(x=012).介电测试表明,La含量增大,反铁电→顺电相变温度降低,峰值介电常量减小.在x=006的PLZSnT三元相图中,反铁电四方相区扩大到Ti含量约为18at%,该系统反铁电陶瓷具有“窄、斜”型双电滞回线和“三电滞回线”;在高Zr、高Sn区,反铁电→顺电相变呈现弥散相变和介电频率色散特征,即反铁电极化弛豫现象.从ABO3钙钛矿结构的容忍因子(t)和反铁电相的结构特征出发,讨论了La对Pb(Zr,Sn,Ti)O3相变与电学性质的影响机理 关键词： 场诱相变 弛豫型反铁电体 介电性能 La调节Pb(Zr Sn Ti)O3     

钨青铜型结构铁电体的低温扩散相转变

对六种钨青铜结构的铌酸盐铁电晶体进行了从15 K 到室温范围的介电特性及热电特性的研究. 分析其介电特性和热电特性与极化电场的关系, 用x 射线粉末衍射进行佐证. 证实在50 一70 K 的范围内, SBN , PBN , KNSBN 三类铁电钨青铜铌酸盐晶体均存在着一个新的相变. 相变是由点群4mm铁电相到点群mm2 铁电相的转变. 铁电自发极化方向由四方晶胞的c轴方向转变到正交晶胞的b 轴方向.介电特性的高频及低频测量表明该相变具有扩散(或称弥散)型特征. 比热的实验结果证明相变是属于高于一阶相变的高阶相变. 对相变前后的晶胞结构提出了一个模型解释. 关键词：     

与相变潜热有关的铁电-顺电相界动力学及其尺寸效应

对于铁电-顺电相界的快移动，提出了相变潜热释放传导机理进行解释，并对其尺寸效应做了进一步研究.研究表明相界移动速率随体系厚度的减小而增加.理论结果与实验符合. 关键词： 铁电相变 相界动力学 相变潜热 尺寸效应     

动态外场作用下Ising自旋体系的非平衡动态相变

系统地考察了Ising自旋体系的动力学方程对三种不同性质的驱动外场（正弦波 、方波和锯齿波）的动态响应及其相应的非平衡动态相变特征.在正弦波和方波的驱动场 作用下，体系存在分别对应于低温对称破缺的铁磁有序态和高温对称顺磁无序态的动态非平衡转变，相应的动态转变相界上存在区分连续转变和非连续转变的三临界点；而锯齿波驱动 场情形下体系始终维持对称性破缺的有序态.体系动态转变表现出的上述差异与作用外场的驱动特征有关.确定了表征相应动态相变相界的临界驱动外场振幅h0C和频率 ωc、体系的温度tc, 并给予了分析讨论 关键词： Ising自旋体系 非平衡动态相变 对称性 平均场     

Si掺杂HfO_2薄膜的铁电和反铁电性质

通过改变Si掺杂量制备出了具有显著铁电和反铁电特征的HfO2纳米薄膜,对其电滞回线、电容-电压和漏电流-电压特性以及物相温度稳定性进行了对比研究.反铁电薄膜的介电系数大于铁电薄膜,在电场加载和减载过程中发生的可逆反铁电-铁电相变导致了双电滞回线的出现,在室温至185℃的测试温度范围内未出现反铁电→顺电相变.在电流-电压特性测量时观察到的负微分电阻效应归因于极化弛豫等慢响应机理的贡献.     

基于Weiss分子场理论对极性液体中静态介电常数随温度变化及其相应取向关联的研究

迄今为止,并没有被普遍接受的液体静态介电常数的微观理论模型, 主要原因是对属于强关联系统的液体中分子之间的取向关联特征仍不十分清楚. 本文基于Weiss分子场理论(WMFT), 对水(water, H₂O)、甲醇(methanol, CH₄O)、乙醇(ethanol, C₂H₆O)和正丙醇(1-propanol, C₃H₈O)等4种极性液体中静态介电常数, 具体为Curie-Weiss常数、Curie温度和Weiss分子场因子随温度变化规律进行分析研究, 得出上述液体中: 1)铁电关联(ferroelectric correlation, FC)和反铁电关联(anti-ferroelectric correlation, AFC)共存, 且FC比AFC强得多, 以及随温度降低FC减弱和/或AFC增强; 2)结构均匀的WMFT不能定量描述上述液体中足够低的温度下反常大的静态介电常数. 可以想象FC和较弱AFC的共存必然导致极性液体中关联序的空间不均匀, 由此作者提出了空间不均匀关联序的粗粒近似的Weiss分子场理论, 并用此理论对上述液体中静态介电常数随温度快速变化的行为进行了解释. 上述结果对深入认知液体物理学, 包括玻璃化转变机制的探索, 无疑是有价值的.     

铁电相变中极化与介电性的随机场效应

基于随机场Ising模型描述的有序无序相变中偶极子在电场作用下的反转运动, 研究了有序无序相变过程中电场与极化强度的关系. 认为tanh(x) 的函数关系与位移型二阶铁电相变极化强度随电场变化的实验结果完全相同. 由此得出基本结论: 偶极子的集体转向造成了极化强度的增大并等同于内电场的增加. 通过区分光学模和偶极子对介电隔离率的贡献, 考虑偶极子极化对介电常数复数形式的频率色散关系, 发现从高斯分布的居里温度可以导出二阶铁电相变过程中介电常数与温度和频率的色散关系. 关键词： 铁电相变 极化强度 随机场     

Molecular structure and physical parameters of some ferroelectric liquid crystal systems

We investigate thermodynamic properties and spontaneous polarization of ferroelectric liquid crystal (SmC^*LC) systems: smectic C matrix + chiral adding (ChA). The fact of existence of an optimum concentration of ChA, for which the studied SmC^*LC systems have the maximum value of spontaneous polarization, and a certain concentration, at which the phase transition of the chiral tilted smectic C phase to the smectic A phase occurs, is established. Temperature dependence curves for the free energy, configuration energy, specific heat, and the orientational order parameter are calculated in the temperature range of existence of liquid crystal mesophases. The curves are in good agreement with the experimentally observed trends of the SmC^*LC properties.     

Orientational Relaxation in Ferroelectrics of Tetragonal Symmetry

The energy absorption caused by rotation of the spontaneous and induced polarization vectors in external longitudinal alternating-sign stress field is calculated for the barium titanate ferroelectric of tetragonal symmetry. The acoustic absorption coefficient, the internal friction, and the E effect together with their frequency and orientational dependences are derived in terms of elastic and piezoelastic constants, components of the electrostriction tensor, and rotational dissipation coefficients. The given dissipation type can dominate in ferroelectric magnets with strong coupling of their elastic, electrical, and magnetic subsystems.     

外加电场对铁电薄膜相变的影响

采用热力学非线性理论,研究了外加电场对立方基底Pb(Zr_0.3Ti_0.7)O₃(PZT)铁电薄膜相变的影响.通过数值计算,得到了"失配应变-外加电场"相图,及外加电场与极化强度的关系.当外加电场达到186 kV/cm时,能使生长在SrTiO₃ 基底上PZT铁电薄膜从单斜r相转变为c相.在实验上,采用扫描探针显微镜通过对PZT薄膜施加不同的极化电场来研究了它的电畴翻转.从得到的压电响应相图可以看出,绝大多数的电畴是清晰可 关键词： 铁电薄膜 相变 扫描探针显微镜 失配应变     

Dipole moment of a small water cluster. The effect of size,temperature, and electric field

A molecular dynamics simulation of neutral clusters (H₂O) _{n ≤ 21} has been performed in the framework of the flexible polarized model. The formation and evolution of the dipole moment of the cluster have been investigated with a change in the size and temperature of the cluster and an external electric field. It has been shown that at low electric fields corresponding to the experiments on the deflection of clusters in the transverse inhomogeneous electrostatic field (Moro et al., 2006), the induced polarization of the cluster is determined by the orientational polarizability of the “rigid” cluster, rather than by the intracluster reorientation of the molecules. The calculated dependence of the effective polarizability of the cluster in the low field on n qualitatively reproduces the experimental results, but the calculated polarizability is numerically much higher than the experimental value by, e.g., a factor of 4 for n ≈ 20.     

Switching of banana liquid crystal mesophases under field

Taking advantage of the great number of bent-core or “banana" compounds synthesized and studied in the laboratory, we describe their behaviour under the application of an external electric field. If the field were a static one, we would work within the frame of an equilibrium phase diagram in a (field E, temperature T) space where some phases would be simple dielectrics and others ferroelectric ones with a macroscopic polarization, either spontaneous or induced by the field. In this paper, we deal with the basic responses of “banana” liquid crystals under the application of a low frequency (1 to 100 Hz) AC field. Firstly square-wave voltages allow us to locate the phase boundary between dielectric (at lower field) and ferroelectric phases (higher field) at a given temperature and field threshold. Then we apply slowly varying AC voltages with shapes like triangle or “triple-plateau” to check out the stability of the induced ferroelectric phase versus field removal. Three behaviours are encountered, the unstable one (short lifetime of the high-field ferroelectric phase) where the macroscopic polarization is destroyed and then rebuilt in the opposite direction during each half period and usually called “antiferroelectric”; the stable one (long lifetime) with a polarization that rotates at constant modulus which is labeled as “ferroelectric” and a new one where the macroscopic polarization is proportional to the applied fied, we named this behaviour as “superparaelectric”. Let us stress that these observations apply to the ferroelectric phases of the (E, T) phase diagram not to the zero field (0,T) phases observed in the usual phase characterization experiments except for an eventual spontaneous ferroelectric phase. Received 18 April 2002 and Received in final form 17 January 2003 Published online: 16 April 2003 RID="a" ID="a"e-mail: marcerou@crpp.u-bordeaux.fr RID="b" ID="b"URL: http://www.crpp-bordeaux.cnrs.fr     

Internal electric fields due to piezoelectric and spontaneous polarizations in CdZnO/MgZnO quantum well with various applied electric field effects

The strain-induced piezoelectric polarization and the spontaneous polarization can be reduced effectively using the applied electric field in the CdZnO/ZnMgO quantum well (QW) structure with high Cd composition. That is, optical properties as a function of internal and external fields in the CdZnO/ZnMgO QW with various applied electric field result in the increased optical gain due to the fact that the QW potential profile is flattened as a result of the compensation of the internal field by the reverse field as confirmed. These results demonstrate that a high-performance optical device operation can be realized in CdZnO/MgZnO QW structures by reducing the droop phenomenon.