负电子亲和势光电阴极量子效率公式的修正

量子效率是表征负电子亲和势（NEA）光电阴极发射性能的最重要的特性参数,准确建立量子效率公式为揭示各个阴极参量对整体性能的影响以及NEA光电阴极的优化设计提供了重要的理论指导.在对NEA光电阴极体内及表面光电发射过程的分析基础上,考虑入射光子能量、表面能带弯曲区以及表面势垒对电子发射的影响,对表面逸出概率和电子衰减长度进行了修正,并利用积分法推导了NEA光电阴极的量子效率公式,其理论预测曲线与实验曲线基本一致,从而验证了修正公式的实用性.为NEA光电阴极的研究提供了有效的理论参考依据. 关键词： 负电子亲和势光电阴极 量子效率 能带弯曲区 衰减长度     

超二代像增强器多碱阴极光电发射特性研究

通过测量超二代像增强器多碱阴极的光谱反射率和透射率,根据能量守恒定律计算得到了多碱阴极的光谱吸收率.结果表明,只有当光子的能量大于1.333 eV以后,多碱阴极的吸收率才开始快速增大.这说明多碱阴极的光谱吸收存在一个1.333 eV的长波吸收限,入射光的光子能量如果小于该吸收限,多碱阴极将不吸收.在多碱阴极的表面电子亲合势进一步降低的情况下,多碱阴极光电发射的长波理论阈值由长波吸收限所决定.多碱阴极在吸收光子之后的电子跃迁过程中,跃迁电子的能量增加小于所吸收入射光子的能量,即存在一个"能量损失".光子的能量越高,所激发的跃迁电子所处的能级越高,能量损失越大.同时光子的能量越高,跃迁电子所处的能级越高,电子跃迁的几率越低.多碱阴极的量子效率由吸收率、跃迁几率和跃迁能级、扩散过程中的能量损失等因素共同决定,因此多碱阴极的量子效率存在长波阈的同时也存在短波阈.多碱阴极的量子效率在2.11 eV达到最大值之后,随着光子能量的增加而单调减小,在3.6 eV时,量子效率减小到零.多碱阴极在3.6 eV时的吸收系数仍然很高,但由于电子跃迁的几率低,同时电子扩散过程中的能量损失大,导致尽管多碱阴极对短波具有较高的吸收系数,但量子效率仍然较低.因此对多碱阴极所吸收的光子能量中,转换成为光电导、晶格热振动等其他非光电发射形式能量的比例而言,短波较长波高,对光电发射的贡献率而言,短波较长波低.     

反射式负电子亲和势GaN光电阴极量子效率衰减机理研究

针对反射式负电子亲和势(NEA) GaN光电阴极量子效率的衰减以及不同波段对应量子效率衰减速度的不同,参照国外给出的NEA GaN光电阴极在反射模式下量子效率曲线随时间的衰减变化情况,利用GaN光电阴极铯氧激活后的表面模型［GaN(Mg):Cs］:O-Cs,结合量子效率衰减过程中表面势垒的变化,研究了反射式NEA GaN光电阴极量子效率的衰减机理. 有效偶极子数量的减小是造成量子效率降低的根本原因,表面I,II势垒形状的变化造成了不同波段对应的量子效率下降速度的不同. 关键词： 负电子亲和势 GaN光电阴极 量子效率 表面势垒     

反射式负电子亲和势GaN光电阴极量子效率衰减机理研究

针对反射式负电子亲和势(NEA) GaN光电阴极量子效率的衰减以及不同波段对应量子效率衰减速度的不同,参照国外给出的NEA GaN光电阴极在反射模式下量子效率曲线随时间的衰减变化情况,利用GaN光电阴极铯氧激活后的表面模型［GaN(Mg):Cs］:O-Cs,结合量子效率衰减过程中表面势垒的变化,研究了反射式NEA GaN光电阴极量子效率的衰减机理. 有效偶极子数量的减小是造成量子效率降低的根本原因,表面I,II势垒形状的变化造成了不同波段对应的量子效率下降速度的不同.     

GaAs光电阴极表面电子逸出概率与波长关系的研究

GaAs光电阴极量子效率公式中用到的表面电子逸出概率,在阴极工作波段范围内通常视为与入射光子波长无关的常数。应用该结论对反射式GaAs光电阴极激活实验结果进行了拟合分析。实验采用分子束外延GaAs材料,外延发射层厚度为1.6μm、掺杂浓度为1×1019cm-3,分析结果显示理论曲线与实验曲线存在偏差,而在激活台内阴极灵敏度下降后的光谱响应曲线拟合结果偏差更大。这种偏差是由于表面电子逸出概率对入射光子波长的依赖关系造成的,并非通常认为的与波长无关。经过光谱响应曲线的拟合分析得出,反射式阴极表面电子逸出概率与入射光子波长之间近似满足指数关系,两者通过表面势垒因子相联系。高、低温激活后阴极表面势垒因子分别为3.53和1.36。     

用光致荧光研究多碱阴极光电发射机理

本文介绍了多碱光电阴极的特点及其在微光像增强器中的应用,叙述了光致荧光的原理.探索了利用光致荧光方法来研究多碱阴极Na2KSh膜层电子跃迁几率的方法,并测量了两个不同灵敏度多碱阴极的荧光谱及同一个多碱阴极在工作和非工作两种状态下的荧光谱,测试结果表明.多碱阴极的荧光强度与其电子跃迁的几率及阴极灵敏度成正比,同时多碱阴极在工作状态下,荧光强度比非工作状态下有所降低,原因是一部分跃迁电子逸出多碱阴极产生光电发射,而这部分电子不再回到基态,因此不再发出荧光.另外本文还测量了多碱阴极在不同波长激光激发条件下的荧光谱.结果表明,长波激发与短波激发相比,长波激发所获得的荧光强度更高,这说明长波激发产生跃迁电子的几率高,同时荧光谱峰值波长与激光波长的偏移较小,因此跃迁电子数多且能量损失小,有利于光电发射,将多碱阴极的荧光谱与多碱阴极的量子效率相比较.看出跃迁电子数量和所处能级这两个对光电发射过程有影响的关键因素中,能级因素对光电发射过程的影响更大.但对多碱阴极而言,由于短波激发时的电子跃迁几率低于长波激发时的电子跃迂几率,跃迁电子扩散过程中的能量损失较大,因此短波的量子效率随波长的增加而增加.实践证明,光致荧光是研究多碱阴极光电发射过程的一种有效手段,通过对多碱阴极荧光谱的研究,进一步揭示了多碱阴极的光电发射的机理,为进一步改进工艺和提高多碱阴极的灵敏度提供了重要的参考价值.     

用光致荧光研究多碱阴极光电发射机理

本文介绍了多碱光电阴极的特点及其在微光像增强器中的应用,叙述了光致荧光的原理,探索了利用光致荧光方法来研究多碱阴极Na₂KSb膜层电子跃迁几率的方法,并测量了两个不同灵敏度多碱阴极的荧光谱及同一个多碱阴极在工作和非工作两种状态下的荧光谱.测试结果表明,多碱阴极的荧光强度与其电子跃迁的几率及阴极灵敏度成正比,同时多碱阴极在工作状态下,荧光强度比非工作状态下有所降低,原因是一部分跃迁电子逸出多碱阴极产生光电发射,而这部分电子不再回到基态,因此不再发出荧光.另外本文还测量了多碱阴极在不同波长激光激发条件下的荧光谱.结果表明,长波激发与短波激发相比,长波激发所获得的荧光强度更高,这说明长波激发产生跃迁电子的几率高,同时荧光谱峰值波长与激光波长的偏移较小,因此跃迁电子数多且能量损失小,有利于光电发射.将多碱阴极的荧光谱与多碱阴极的量子效率相比较,看出跃迁电子数量和所处能级这两个对光电发射过程有影响的关键因素中,能级因素对光电发射过程的影响更大.但对多碱阴极而言,由于短波激发时的电子跃迁几率低于长波激发时的电子跃迁几率,跃迁电子扩散过程中的能量损失较大,因此短波的量子效率随波长的增加而增加.实践证明,光致荧光是研究多碱阴极光电发射过程的一种有效手段,通过对多碱阴极荧光谱的研究,进一步揭示了多碱阴极的光电发射的机理,为进一步改进工艺和提高多碱阴极的灵敏度提供了重要的参考价值.     

GaAs光电阴极光谱响应曲线形状的变化

利用光谱响应测试仪测试了反射式GaAs光电阴极在激活过程中以及激活后衰减过程中的光谱响应曲线,测试结果显示在这两个过程中光谱响应曲线形状都在不断发生变化。在激活过程中随着GaAs表面双偶极层的形成,阴极表面有效电子亲和势不断降低,光谱响应则不断提高,但长波响应提高得更快。在激活结束后,位于激活室中受白光照射的GaAs光电阴极由于Cs的脱附影响了双偶极层结构,阴极表面有效电子亲和势不断升高,光谱响应则不断下降,但长波响应下降得更快。上述现象无法用常用的反射式阴极量子效率公式进行解释,它们与阴极高能光电子的逸出有关。由于反射式阴极发射电子能量分布随着入射光子能量的升高而向高能端偏移,同时阴极表面势垒形状的变化对低能电子比对高能电子的影响更大,从而导致了光谱响应曲线形状的变化。     

光致发光磷光体发光效率的测量

前言 光致发光磷光体的发光效率通常由能量效率或量子效率来表示。 发光磷光体在激发光的作用下,发光能量E_1和所吸收激发能量E_2(即产生发光的激发能量中被吸收的能量)之比值E_1/E_2=η_n称作该磷光体的能量效率。 量子效率η_ι为发光磷光体发射的光量子数N_1和产生发光的激发光子中被吸收的     

反射式NEA GaN光电阴极量子效率恢复研究

以反射式NEA GaN光电阴极充分激活、衰减以及补Cs后的量子效率曲线为依据,针对阴极量子效率的衰减规律和补Cs后的恢复状况,论述了NEA GaN光电阴极量子效率的衰减和恢复机理.经过重新Cs化处理,反射式NEA GaN光电阴极量子效率在240 nm到300 nm的短波区域恢复到激活后最好状态的94%以上,300 nm到375 nm的长波区域恢复到88%以上.结合反射式NEA GaN光电阴极衰减前后的表面势垒形状和反射式GaN光电阴极量子效率的计算公式,得到了量子效率曲线的衰减规律以及补Cs后的恢复状况与 关键词： 反射式 NEA GaN光电阴极 量子效率     

Current detection of superradiance and induced entanglement of double quantum dot excitons

We propose to measure the superradiance effect by observing the current through a semiconductor double-dot system. An electron and a hole are injected separately into one of the quantum dots to form an exciton and then recombine radiatively. We find that the stationary current shows oscillatory behavior as one varies the interdot distance. The amplitude of oscillation can be increased by incorporating the system into a microcavity. Furthermore, the current is suppressed if the dot distance is small compared to the wavelength of the emitted photon. This photon trapping phenomenon generates the entangled state and may be used to control the emission of single photons at predetermined times.     

Entanglement on demand through time reordering

Entangled photons can be generated "on demand" in a novel scheme involving unitary time reordering of the photons emitted in a radiative decay cascade. The scheme yields polarization entangled photon pairs, even though prior to reordering the emitted photons carry significant "which path information" and their polarizations are unentangled. This shows that quantum chronology can be manipulated in a way that is lossless and deterministic (unitary). The theory can, in principle, be tested and applied to the biexciton cascade in semiconductor quantum dots.     

Fabrication of electrically contacted plasmonic Schottky nanoantennas on silicon

We fabricate Schottky contact photodetectors based on electrically contacted Au nanoantennas on p-Si for the plasmonic detection of sub-bandgap photons in the optical communications wavelength range. Based on a physical model for the internal photoemission of hot carriers, photons coupled onto the Au nanoantennas excite resonant plasmons, which decay into energetic "hot" holes emitted over the Schottky barrier at the Au/p-Si interface, resulting in a photocurrent. In our device, the active Schottky area consists of Au/p-Si contact and is very small, whereas the probing pad for external electrical interconnection is larger but consists of Au/Ti/p-Si contact having a comparatively higher Schottky barrier, thus producing negligible photo and dark currents.We describe fabrication that involves an electron-beam lithography step overlaid with photolithography. This highly compact component is very promising for applications in high-density Si photonics.     

Single photon frequency up-conversion and its applications

Optical frequency up-conversion is a technique, based on sum frequency generation in a non-linear optical medium, in which signal light from one frequency (wavelength) is converted to another frequency. By using this technique, near infrared light can be converted to light in the visible or near visible range and therefore detected by commercially available visible detectors with high efficiency and low noise. The National Institute of Standards and Technology (NIST) has adapted the frequency up-conversion technique to develop highly efficient and sensitive single photon detectors and a spectrometer for use at telecommunication wavelengths. The NIST team used these single photon up-conversion detectors and spectrometer in a variety of pioneering research projects including the implementation of a quantum key distribution system; the demonstration of a detector with a temporal resolution beyond the jitter limitation of commercial single photon detectors; the characterization of an entangled photon pair source, including a direct spectrum measurement for photons generated in spontaneous parametric down-conversion; the characterization of single photons from quantum dots including the measurement of carrier lifetime with escalated high accuracy and the demonstration of the converted quantum dot photons preserving their non-classical features; the observation of 2nd, 3rd and 4th order temporal correlations of near infrared single photons from coherent and pseudo-thermal sources following frequency up-conversion; a study on the time-resolving measurement capability of the detectors using a short pulse pump and; evaluating the modulation of a single photon wave packet for better interfacing of independent sources. In this article, we will present an overview of the frequency up-conversion technique, introduce its applications in quantum information systems and discuss its unique features and prospects for the future.     

在BEPC上建造γ束线站的分析

考虑电子的反冲并利用康普顿散射,研究了激光同步辐射光源(LSS)辐射的光子波长、光子能量。结果表明,对于不同的γ,LSS辐射的光子波长和能量有不同的近似公式。当γ<<λ1/4λe时,LSS辐射的光子波长λ2≈λ1/4γ2,能量(εc2≈4γ2εc1;当γ>>λ1/4λe时,LSS辐射的光子波长λ2≈λe/γ,能量cε2≈m0γc2;结果表明,LSS辐射的条件是种子激光的波长λ1大于电子的物质波波长λm;LSS辐射的极值波长是λ2m ax=h/m0γv,极值能量是cε2m ax=βeε;本文后半部分提出了利用北京正负电子对撞机的强流高亮度电子束与激光的康普顿背散射产生单色γ射线的建议。     

Bulk crystal SiC blue LED with p–n homojunction structure fabricated by dressed-photon-phonon–assisted annealing

To fabricate a high-efficiency light emitting diode using indirect-transition-type bulk crystal SiC having a p–n homojunction structure, annealing was performed using stimulated emission via dressed photons generated at the inhomogeneous domain boundaries of Al dopant sites. This device emitted electroluminescence (EL) due to a two-step transition process via dressed-photon–phonons generated at the inhomogeneous domain boundaries of the Al dopant sites. The EL emission peak wavelength was 480–515 nm when the device was driven by a direct current and 390 nm when driven by a pulsed current. The external quantum efficiency of the EL emission was 1 %, and the internal quantum efficiency was as high as 10 %.     

Chromaticity-tunable white light emission from organic multiple-quantum-well structure

Organic multiple quantum wells (MQWs) white light emitting devices are fabricated in which blue fluorescent dye, a trimer of N-anylbenzimidazole (TPBI) and orange fluorescent rubrene doped tris (8-hydroxyquinoline) Aluminum act as quantum-well light emitting layers between triphenyldiamine derivative (TPD) potential barrier layers, and aluminium complex (Alq) act as an electron transporter and green emitter. The injected carriers are confined in different quantum wells and Alq layer. The white light emission comes from a combination of photons generated in different light emitting layers. The Commission Internationale de l' Eclairage (CIE) coordinates of the emitted light are tuned by increasing the number of TPBI wells due to its low fluorescent efficiency compared with rubrene.