累积轧制Ti／AI复合材料的微观结构演变和力学性能研究

用累积轧制法成功制备了平均晶粒尺寸为200--300nm的超细等轴晶Ti／A1多层复合材料．研究了Ti／A1多层复合材料的微结构变化和力学性能．     

Ti75Al25合金微观结构演变的分子动力学模拟

本文利用分子动力学模拟方法, 研究了液态Ti75Al25合金在不同冷却条件下形成晶体及非晶的过程(Q1:1.0×1013 Ks-1, Q2: 1.0×1011 Ks-1). 利用平均原子体积、双体分布函数、键角分布函数、键对分析和Voronoi多面体方法研究了微观局域结构随温度的变化关系. 研究发现：在Q1冷却过程中,液态Ti75Al25合金在1000 K发生玻璃化转变,形成非晶结构; 而在Q2冷却过程中,液态Ti75Al25合金发生结晶,并最终形成hcp晶体结构。     

ICP-AES法测定钛基复合材料中的Al、Mo、B的研究

本文采用ＩＣＰ－ＡＥＳ法对钛基复合材料中的合金元素Ａｌ、Ｍｏ、Ｂ的测定进行研究,着重进行了基体元素对待测元素Ａｌ、Ｍｏ、Ｂ的干扰试验及各元素在测定浓度范围内线性相关性,进行了酸度试验,测定了钛基复合材料中上述三元素的含量,得到了较好的精密度和准确度。     

6066Al/SiCp复合材料内耗性能研究

用粉末冶金方法制备了6066Al合金和不同SiCp含量的6066Al/SiCp复合材料,用多功能内耗仪在200～600 K温度区间内测试了所研究材料在升温过程中的内耗变化趋势,探讨了6066 Al /SiCp复合材料在不同温度区间的内耗机制.结果表明6066Al/SiCp的内耗值比6066Al合金内耗值高,特别是在高温阶段比6066Al合金内耗值高得多;6066Al/SiCp和6066Al合金在300～470 K时的内耗主要是位错与第二相颗粒交互作用引起的位错内耗,在高温下内耗主要由Al/Al、Al/SiC的界面微滑移引起.     

6066Al/SiC_p复合材料内耗性能研究

用粉末冶金方法制备了6066Al合金和不同SiCp含量的6066Al/SiCp复合材料,用多功能内耗仪在200~600 K温度区间内测试了所研究材料在升温过程中的内耗变化趋势,探讨了6066 Al/SiCp复合材料在不同温度区间的内耗机制。结果表明6066Al/SiCp的内耗值比6066Al合金内耗值高,特别是在高温阶段比6066Al合金内耗值高得多;6066Al/SiCp和6066Al合金在300~470 K时的内耗主要是位错与第二相颗粒交互作用引起的位错内耗,在高温下内耗主要由Al/Al、Al/SiC的界面微滑移引起。     

6066Al/SiCp复合材料内耗性能研究

用粉末冶金方法制备了6066Al合金和不同SiCp含量的6066Al／SiCp复合材料，用多功能内耗仪在200～600K温度区间内测试了所研究材料在升温过程中的内耗变化趋势，探讨了6066Al／SiCp复合材料在不同温度区间的内耗机制。结果表明6066Al／SiCp的内耗值比6066Al合金内耗值高，特别是在高温阶段比6066Al合金内耗值高得多；6066Al／SiCp和6066Al合金在300-470K时的内耗主要是位错与第二相颗粒交互作用引起的位错内耗，在高温下内耗主要由Al／Al、Al／SiC的界面微滑移引起。     

Al/Ti双层薄膜TES的光子数分辨特性表征

报道了Al/Ti双层薄膜超导TES的光子数分辨特性。通过设计双层薄膜的尺寸,使其满足光子数分辨所需的热导、热容需要,制备出了完好的TES。在320m K的低温下,通过测试其对1550nm光脉冲的响应,发现等效光子数分辨率可达到40个左右。这是使用超导TES实现单光子探测及进一步实现量子通讯的重要基础。     

Al/ZnO/Al薄膜的结构与磁性分析

采用直流磁控溅射的方法制备了Al/ZnO/Al纳米薄膜,并对薄膜分别在真空及空气中进行退火处理.利用X射线衍射仪(XRD)和物理性能测量仪(PPMS)分别对薄膜样品的结构和磁性进行了表征.XRD分析表明,不同的退火氛围对薄膜的微结构有着很大的影响.采用了一种新的修正方法对磁测量结果进行修正,计算了基底拟合误差的最大值,并对修正后样品的磁性进行了分析.结果显示,室温铁磁性可能与Al和ZnO基体之间发生的电荷转移以及在不同退火氛围下Al在ZnO晶格中的地位变化有关.关键词：Al/ZnO/Al薄膜铁磁性磁性表征     

高体分SiC_p/Al复合材料螺纹性能的测试

从SiCp/Al复合材料性能分析着手,讨论了预置件法、焊接法和粘接法等在空间遥感器研制中常用的联接方法的优缺点,提出了在高体积分数（体分）SiCp/Al复合材料上直接加工螺纹,并加装钢丝螺套的方法来改善螺纹联接性能。对在某高体分SiCp/Al复合材料上加工的M4、M5螺纹进行了拉伸测试,结果表明：加装钢丝螺套前,复合材料螺纹有被拉脱现象;加装钢丝螺套后,M4螺纹、螺杆在3 000～4 000 N被拉断;M5螺纹、螺杆在8 000～9 000 N被拉断,测试后两种规格的螺纹状态良好,可以满足实际应用对该材料拉伸强度的要求,其已应用于工程项目中。     

高体分SiC_p/Al复合材料螺纹性能的测试

从SiCp/Al复合材料性能分析着手,讨论了预置件法、焊接法和粘接法等在空间遥感器研制中常用的联接方法的优缺点,提出了在高体积分数(体分)SiCp/Al复合材料上直接加工螺纹,并加装钢丝螺套的方法来改善螺纹联接性能。对在某高体分SiCp/Al复合材料上加工的M4、M5螺纹进行了拉伸测试,结果表明:加装钢丝螺套前,复合材料螺纹有被拉脱现象;加装钢丝螺套后,M4螺纹、螺杆在3 000～4 000 N被拉断;M5螺纹、螺杆在8 000～9 000 N被拉断,测试后两种规格的螺纹状态良好,可以满足实际应用对该材料拉伸强度的要求,其已应用于工程项目中。     

Diffusion and precipitation phenomena across layer interfaces in a roll bonding composite of Al(Si) and Al(Cu)

Layered composite structures can be generated in metallic sheets by roll bonding of dissimilar metals/alloys. In this investigation, heat treatable (Al(Cu)) and non-heat treatable (Al(Si)) aluminium alloys are roll bonded in sheet form. Large hardness differences between layers poses significant bonding challenges in the form of multiple necking within the hard Al(Cu) layers. For successful processing, it is vital to choose the candidate materials in a state of marginal hardness differences during rolling, but being capable of altering properties through subsequent heat treatments. Atomic diffusion takes place during heat treatment of the composite sheet and results in gradual hardness variation across sheet thickness. The Al(Cu) layers contribute to strength, whereas the Al(Si) layers provide protection from corrosion/wear-related degradation in the newly developed hybrid sheet. The overall mechanical properties of the heat-treated composite fall between the base alloys. The bonding interfaces are noted as the potential spots for initiating failure.     

TiAl/Ti3Al体系剪切变形的分子动力学研究

利用分子动力学方法研究了正化学比的TiAl/Ti3Al双相体系中剪切变形诱发位错形核以及相关结构转变的动态过程以及切变力场对最终结构的影响.研究发现,在TiAl/Ti3Al双相体系中剪切变形诱发黏滞-滑移式的滑移行为;界面在其中起到了传递能量、均衡协变的作用,界面两侧的异相结构保留了单相形变特征.六角密堆积(HCP)-Ti3Al部分各原子层较长时间内呈整体剪切协变,其后形变分化为应力集中诱发层错区和初始完整结构回复区;而面心立方(FCC)-TiAl部分因刚性较大仅存在微协变,其后局部受力区直接诱发相邻原子层间相对滑移,发生FCC向HCP结构转变.变形结构方面,HCP-Ti3Al部分在剪切力较大区域形成连续且稳定的FCC堆垛,近界面区FCC薄层与HCP相交替并存;而FCC-TiAl部分内禀层错和孪晶共存,当力场增大时形成亚稳HCP结构.     

Al(001)表面上沉积Ti薄膜的分子动力学模拟

采用分子动力学模拟方法,研究了Ti原子连续沉积于Al(001)表面上的薄膜生长过程,分析了入射能量为0.1、5 eV和衬底温度为300、700 K时的界面结合及微观结构.模拟结果表明,增加入射能量和衬底温度,使Ti薄膜的表面越光滑;通过径向分布函数和键对分析技术对薄膜微观结构进行分析,发现衬底温度时薄膜微观结构影响较大,温度300 K及以下时,Ti薄膜主要是FCC结构,随着温度升高,FCC结构成分减少,无序结构成分增加,而入射能量则对薄膜微观结构没有明显影响.     

Microstructure and current transport in Ti/Al/Ni/Au ohmic contacts to n-type AlGaN epilayers grown on Si(111)

The microstructure and the current transport in Ti/Al/Ni/Au ohmic contacts on AlGaN were investigated in this paper.Significant structural changes of the metal stack occurred upon annealing and ohmic contacts were obtained after thermal treatments above 700 C, with specific contact resistance values , which depend on the thickness of the Ti layer.Although the formation of a TiN interfacial layer is independent of the Ti thickness, different contact structures, i.e. the phases and grain location, were found as a function of the Ti layer, which were crucial for the nanoscale current transport through the contact stack. In particular, conductive atomic force microscopy combined with the resistivity measurement of the main phases formed upon annealing (AlNi, AlAu₄, Al₂Au) indicated that the low resistivity Al₂Au phase provides preferential conductive paths for the nanoscopic current flow through the contact.     

Ab-initio study of long-period superstructures and anti-phase boundaries in Al-rich γ-TiAl (L10)-based alloys

In this work, we report first-principles investigation of structural stability of all experimentally observed ordered long-period superstructures (LPSs), viz., r-Al₂Ti, h-Al₂Ti, Al₅Ti₃ along with Al₅Ti₃′, Al₁₁Ti₇ and Al₃Ti₂ LPSs, which are observed only as short-range ordered clusters at nanoscale level in Al-rich TiAl-based alloys. We adopt a procedure based on space-filling tiling arrangement of ordered Ti₂Al, Ti₃Al, Ti₄Al motifs and their combination along with a symmetry analysis programme to determine the unit cell and the crystallographic information of Al₅Ti₃′, Al₁₁Ti₇ and Al₃Ti₂ LPSs in terms of L1₀ fcc unit cell. First-principles calculations are performed to further refine these crystallographic parameters (Wyckoff positions and lattice parameters) obtained from the above procedure. Moreover, it is found that the family of five LPSs have subgroup–supergroup relationships with γ-TiAl (Sp. gr. P4/mmm) and among themselves. Further, we find the inherent stability of r-Al₂Ti?+?γ-TiAl and 2Al₅Ti₃?+?γ-TiAl phase mixtures at 0?K compared to isomolecular Al₃Ti₂ and Al₁₁Ti₇ LPSs at their respective concentrations. The calculations of single-crystal elastic constants of Al₅Ti₃, Al₁₁Ti₇, Al₃Ti₂ and Al₅Ti₃′ LPSs show all these four structures are mechanically stable. We also calculate antiphase boundary (APB) formation energies for two types of APBs, viz., type-A and type-C in ordered Al₅Ti₃ LPS using the supercell approach. The relaxed APB energies for type-A and type-C APBs are 15.44 and 124.16?mJ/m², respectively.     

Effects of cap layer on ohmic Ti/Al contacts to Si implanted GaN

A low resistivity ohmic contact to Si-implanted GaN was achieved using a metal combination of Ti/Al. The effect of a protection cap during post-implantation annealing is investigated, and how it affects the specific contact resistivity (ρ_c). Relevant differences between the protected (PR) sample with SiO₂ and unprotected (UP) sample during the post-implantation annealing were observed after metal alloying at 700 °C. The lower values of ρ_c have been obtained for UP sample, but with very low reproducibility. In contrast, SiO₂ cap layer has demonstrated its relevance in yielding a much more uniformity of a relatively low ρ_c around 10⁻⁵ Ω cm². Related mechanism for the uniformity in ρ_c was discussed based on the results obtained from electrical measurements, XRD (X-ray diffraction) analysis, AFM (atomic force microscopy) and SEM (scanning electron microscopy) observations.