共查询到19条相似文献,搜索用时 125 毫秒
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在相位匹配和可接受掺杂比理论的基础上,针对CdGe((As11-xPx)2晶体,研究了掺杂比对频率转换的影响。依据Sellmeier方程得到了倍频和Ho3+:YLF与Cr:Er:YSGG激光器泵浦光学参量振荡的相位匹配调谐曲线,并给出了不同掺杂下的可接受掺杂比。结果表明:掺杂晶体可实现2~9 μm范围内非临界相位匹配的倍频和2~18 μm的参量光产生;随着掺杂比的增大,可接受掺杂比近似线性减小,并随着波长改变展现出了不同变化趋势。 相似文献
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以Pb粉、Te粉、Ag粉、Ge粉为原材料,在真空气氛下合成(AgSbTe2)100-x-(GeTe)x (x=80---90) (TAGS)合金热电材料, X射线衍射(XRD)分析表明,热压烧结后合金具有低温菱形结构. 通过热压烧结法将TAGS粉末制备成块体材料,运用XRD和扫描电子显微镜对材料的物相成分、 晶体结构和形貌进行了表征.采用直流四探针法测定样品的电导率,当样品两端的温差为1---4℃ 的情况下测量Seebeck系数.通过材料热电性能测试,研究了30---500℃温度范围内不同组分 样品性能参数的变化.结果表明,所制备的TAGS热电材料具有纳米结构, 其性能随着组分的变化而变化, TAGS-80具有较好的热电性能,在530℃时具有最高热电优值(ZT=1.80). 相似文献
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本文基于密度泛函理论系统地研究了(TiO2)n团簇上二氧化碳(CO2)的吸附和活化性质. 计算结果表明,CO2更倾向于吸附在(TiO2)n团簇的桥氧原子上,形成“化学吸附”碳酸盐络合物. 而CO更倾向于吸附到末端Ti-O的Ti原子上. 发现计算得到的碳酸盐振动频率值与实验获得的结果非常吻合,这表明配合物中CO2的几何构型与其线性型相比,有微小的弯转. 通过对电子结构、电荷密度、电离势、HOMO-LUMO以及态密度的分析,证实了CO2与团簇之间的电荷转移以及相互作用. 从预测的能量分布图来看,(TiO2)n团簇上的CO2活化与结构密切有关,相比于块体的TiO2,CO2在团簇结构上更易于吸附和活化. 相似文献
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X-ray powder diffraction,resistivity and magnetization studies have been performed on polycrystalline Nd(FexMn1-x)2Si2 (0 ≤ x ≤ 1) compounds which crystallize in a ThCr2Si2-type structure with the space group I4/mmm.The field-cooled temperature dependence of the magnetization curves shows that,at low temperatures,NdFe2Si2 is antiferromagnetic,while the other compounds show ferromagnetic behaviour.The substitution of Fe for Mn leads to a decrease in lattice parameters a,c and unit-cell volume V .The Curie temperature of the compounds first increases,reaches a maximum around x = 0.7,then decreases with Fe content.However,the saturation magnetization decreases monotonically with increasing Fe content.This Fe concentration dependent magnetization of Nd(FexMn1-x)2Si2 compounds can be well explained by taking into account the complex effect on magnetic properties due to the substitution of Mn by Fe.The temperature’s square dependence on electrical resistivity indicates that the curve of Nd(Fe0.6Mn0.4)2Si2 has a quasi-linear character above its Curie temperature,which is typical of simple metals. 相似文献
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The microwave dielectric properties of La1-xBx(Mg0.5Sn0.5)O3 ceramics were examined with a view to their exploitation for mobile communication. The La1-xBx(Mg0.5Sn0.5)O3 ceramics were prepared by the conventional solid-state method with various sintering temperatures. The X-ray diffraction patterns of the La0.995B0.005(Mg0.5Sn0.5)O3 ceramics revealed no significant variation of phase with sintering temperatures. A maximum apparent density of 6.58 g/cm3, a dielectric constant (εr) of 19.8, a quality factor (Q × f) of 41,800 GHz, and a temperature coefficient of resonant frequency (τf) of −86 ppm/°C were obtained for La0.995B0.005(Mg0.5Sn0.5)O3 ceramics that were sintered at 1500 °C for 4 h. 相似文献
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The magnetic properties of (Cox Fe1-x)A (Zn1-x Fe1+x)B O4 are studied using mean-field theory and the probability distribution law to obtain the saturation magnetization, the coercive field, the critical temperature, and the exchange interactions with different values of D (nm) and x. High-temperature series expansions (HTSEs) combined with the Pade approximant are used to calculate the critical temperature of (CoxFe1-x)A(Znl-xFe1+x)BO4, and the critical exponent associated with magnetic susceptibility is obtained. 相似文献
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Amodini MishraS.N. Choudhary K. Prasad R.N.P. Choudhary 《Physica B: Condensed Matter》2011,406(17):3279-3284
The polycrystalline sample of Ba(Pr1/2Ta1/2)O3 was prepared by a high-temperature solid-state reaction technique. The crystal symmetry, space group and unit cell dimensions were derived from the experimental results using FullProf software. XRD analysis of the compound indicated the formation of a single-phase tetragonal structure with the space group P4/mmm (1 2 3). Impedance and electric modulus analysis were used as tools to analyze the electrical behavior of the sample as a function of frequency at different temperatures. The impedance analysis of the compound indicated a typical negative temperature coefficient of resistance behavior, and dielectric relaxation was found to be of non-Debye type. The frequency dependent maximum of the imaginary part of the electric modulus follows the Arrhenius law with activation energy of 0.15 eV. The ac conductivity data obeys double power law. 相似文献
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The transverse laser induced thermoelectric voltages in step flow growth (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 thin films 下载免费PDF全文
This paper reports that the transverse laser induced thermoelectric voltages (LITV) are observed for the first time in the step flow growth (1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMN-PT,x = 0.20, 0.33, 0.50) thin films deposited on vicinal-cut strontium titanate single crystal substrates. Because lead magnesium niobate-lead titanate is a solid solution of lead magnesium niobate (PMN) and lead titanate (PT), there are two types of signals. One is wide with a time response of a microsecond, and the other superimposed with the wide signal is narrow with a time response of a nanosecond. The transverse LITV signals depend on the ratio of PMN to PT drastically. Under the irradiation of 28-ns pulsed KrF excimer laser with the 248-nm wavelength,the largest induced voltage is observed in the 0.50Pb(Mg1/Nb2/3)O3-0.50PbTiO3 films. Moreover, the effects of film thickness, substrates, and tilt angles of substrates are also investigated. 相似文献
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L.G. Gao K.B. Yin L. Chen H.X. Guo Y.D. Xia J. Yin Z.G. Liu 《Applied Surface Science》2009,256(1):90-95
Thermal stability, interfacial structures and electrical properties of amorphous (La2O3)0.5(SiO2)0.5 (LSO) films deposited by using pulsed laser deposition (PLD) on Si (1 0 0) and NH3 nitrided Si (1 0 0) substrates were comparatively investigated. The LSO films keep the amorphous state up to a high annealing temperature of 900 °C. HRTEM observations and XPS analyses showed that the surface nitridation of silicon wafer using NH3 can result in the formation of the passivation layer, which effectively suppresses the excessive growth of the interfacial layer between LSO film and silicon wafer after high-temperature annealing process. The Pt/LSO/nitrided Si capacitors annealed at high temperature exhibit smaller CET and EOT, a less flatband voltage shift, a negligible hysteresis loop, a smaller equivalent dielectric charge density, and a much lower gate leakage current density as compared with that of the Pt/LSO/Si capacitors without Si surface nitridation. 相似文献
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The density functional calculations on the structural and electronic properties of the endohedral fullerene dimer (N2@C60)2 下载免费PDF全文
The generalised gradient approximation based on density functional theory is used to study the structural and electronic properties of the endohedral fullerene dimer (N 2 @C 60) 2.Four N atoms sit at the cage centres in the form of two N 2 molecules.The density of states and Mulliken charge analysis explore that the energy levels from-6 to-10 eV are mainly influenced by the N 2 molecules. 相似文献
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Based on the density functional theory(DFT),using the scheme of the linearized augmented plane wave and the improved local orbital(APW + lo),the structure,the electronic bands and the magnetism of superconducting compounds Ca1-xKxFe2As2(x = 0,0.25,0.5,0.75,1) are optimized and calculated.The calculation results indicate that with K-doping the lengths of the a,b axes can decrease,and the length of the c axis,the volume,the energy of spin-down valence bands,and the DOS at the Fermi level can increase,which leads the magnetic moment of the system to increase. 相似文献
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The magnetic properties and magnetoresistance effect of Y1-xGdxMn6Sn6 (x=0-1) compounds have been investigated by magnetization and resistivity measurements in the applied field range (0-5 T). Compounds with x=0.4-1 display ferrimagnetic behaviours in the whole magnetic ordering temperature range, while compounds with x=0-0.2 display a field-induced metamagnetic transition, and the threshold fields decrease with increasing Gd content. The compounds with x=0.1-0.2 undergo an antiferromagnetic to ferromagnetic transition with increasing temperature. The cell-parameter a and c and cell-volume V of compounds (x=0-1) increase with increasing Gd content. It was found that the saturation magnetization M_s of the compounds (x=0.4-1) decreases, while the ordering points of the compounds (x=0-1)increase with increasing Gd content. A large MR effect was observed in the compound with x=0.2, and the maximum absolute value of MR at 5 K under 3 T is close to 19.3%. 相似文献