Pt-Ag合金纳米线热力学性质的分子动力学模拟研究

基于EAM原子嵌入势,采用分子动力学方法,对临界尺寸下的Pt0.95Ag0.05合金纳米线多边形结构的熔化行为进行了计算模拟.结果表明:径向尺寸对Pt0.95Ag0.05合金纳米线的熔点影响较为显著,而长度对其影响较小;引入林德曼因子得到的熔点和用势能-温度变化曲线找到的熔点基本一致;合金纳米线的染色原子由外向内运动;综合分析发现Pt0.95Ag0.05合金纳米线以先外后内的模式进行熔化.     

Pt-Ag合金纳米线热力学性质的分子动力学模拟研究

基于原子嵌入势(EAM),采用分子动力学方法,对临界尺寸下的Pt_(0.95)Ag_(0.05)合金纳米线多边形结构的熔化行为进行了计算模拟.结果表明:径向尺寸对Pt_(0.95)Ag_(0.05)合金纳米线的熔点影响较为显著,而长度对其影响较小;引入林德曼因子得到的熔点和用势能-温度变化曲线找到的熔点基本一致;合金纳米线的染色原子由外向内运动;综合分析发现Pt_(0.95)Ag_(0.05)合金纳米线以先外后内的模式进行熔化.     

温度对金属纳米线势能分布的影响

采用三维分子动力学模拟方法,以面心立方金属银为研究对象,基于Finnis-Sinclair型嵌入原子法(EAM)多体势,模拟研究了纳米线势能分布特征在常温下及其在不同温度直到熔化过程中的变化,给出了常温及不同温度银纳米线势能分布比例和势能分布函数.结果表明:常温下,纳米线高势能原子比例随纳米线横截面尺寸的减小而增大,势能分布函数曲线各峰位几乎与纳米线横截面尺寸无关;纳米线熔化前的势能分布函数曲线具有多个波峰,随着温度增加,峰数减少且峰位右移;熔化后,多峰特征消失,只有一个宽化的峰.     

Pt-Au核-壳结构纳米粒子热稳定性的分子动力学研究

采用分子动力学方法结合嵌入原子势, 对Pt-Au核-壳纳米粒子的热稳定性进行了研究. 计算结果表明: Pt-Au纳米粒子的熔点明显高于Au纳米粒子而低于Pt纳米粒子. 通过计算Lindemann指数发现: 壳层中的Au首先熔化, 然后逐渐向内部扩展, 最终导致核中的Pt完全熔化; 熔化所经历的温度区间明显宽于单质纳米粒子, 而且该熔化过程呈现典型的两阶段熔化特征; 在两次熔化之间, 存在着固(核)液(壳)共存的结构. 关键词： 纳米粒子 熔化 分子动力学     

一种新的熔化理论——位错运动的量子化模型

 本文提出了一种新的熔化理论，从位错运动的量子化模型出发导出了林德曼熔化定律，得到了与实验结果相符的熔点计算值。     

Al_n(n﹤10000)团簇熔化行为的分子动力学模拟

采用半经验的Gupta原子间多体势,运用分子动力学模拟结合退火技术,由不同初始结构(密堆积满壳层Ih、Oh结构及退火结构)出发,研究了尺寸在10000个原子之内的Al团簇的熔化行为.结果表明:在所研究团簇尺寸范围内,Ih结构均具有高的动力学稳定性;Oh结构的动力学稳定性与团簇尺寸密切相关:尺寸较小(1000个原子以内)时不稳定(熔化前会发生向类Ih结构的转变),在中间尺寸(1000~2000原子间)时动力学稳定性发生转变,尺寸较大(2000原子以上)时显示出完整的动力学稳定性;从不同初始结构出发所得相同尺寸团簇熔点基本相同;在200原子以上时,团簇熔点随尺寸变大而升高且体现出近似的线性关系.     

碳纳米管内金纳米线的结构与热稳定性

采用分子动力学模拟方法, 研究了填充在(8,8)单壁碳纳米管内的Au纳米线的结构和热稳定性. 研究表明, 经高温退火至室温, Au在碳纳米管内能生成多样而稳定的结构上明显区别于自由状态Au纳米线的壳层螺旋结构Au纳米线, 其螺旋结构会随着温度的变化而转变. 束缚在碳纳米管内的壳层螺旋结构Au纳米线有非常好的热稳定性, 稳定温度高于块体Au晶体的熔化温度. 关键词： 纳米线 碳纳米管 热稳定性 分子动力学模拟     

碳纳米管内Ni纳米线的螺旋度与热稳定性研究

本文采用分子动力学模拟方法研究了扶手型碳纳米管包裹Ni纳米线的复合结构, 主要讨论内部Ni纳米线的螺旋度和热稳定性.结果表明, Ni纳米线为多壳层螺旋结构, 各壳层是由多条Ni原子链螺旋而成,不同层的螺旋度不同,内层的螺旋度明显大于外层. 当每层的Ni原子链条数为3的整数倍时,其螺旋度最大. Ni纳米线的螺旋度与碳纳米管的管径相关,各层螺旋度的大小随管径的增加有明显的周期性变化. 碳纳米管对Ni纳米线有很好的保护作用,即使是高温对Ni纳米线的结构及螺旋度也影响很小.     

金属Al表面熔化各向异性的分子动力学模拟

采用嵌入原子势,使用分子动力学方法对金属Al不同低指数晶面的表面熔化现象分别进行了模拟.分析了熔化过程中样品结构组态的变化.模拟结果表明对于不同的自由表面,表面熔化呈现出明显的各向异性行为.Al（110）面在低于熔点的温度之下发生预熔化;（111）与（001）面都出现过热现象.与（111）面不同,（001）面发生过热现象时表面原子层为类液层,而（111）面仍然保持很好的晶格结构,即预熔化的Al（001）面在高于熔点的温度下,仍可以在很长的时间内处于相对稳定的亚稳态.由模拟得到Al的热力学熔点为950 K左右,与实验值基本符合. 关键词： 分子动力学 表面熔化 过热     

银、钴和铂原子纳米团簇熔化过程的分子动力学模拟

本文采用分子动力学模拟方法,研究了银、钴和铂原子纳米团簇的熔化过程,模型采用的是Johson的EAM作用势.模拟结果表明,较大原子数目的纳米团簇其熔点随尺寸单调增加,而较小原子数目的团簇熔点和尺寸呈现无规则变化;大多数团簇在熔点附近都出现了负热容现象,说明负热容是纳米团簇在熔化过程中的一个普遍现象.     

Raman mapping of laser-induced changes and ablation of InAs nanowires

Indium arsenic (InAs) nanowires were irradiated with a focused laser beam, followed by in situ Raman spectroscopy mapping and scanning electron microscopy imaging to investigate the changes of the nanowires due to laser irradiation. It was found that laser irradiation with the power intensity above a certain threshold causes arsenic (As) atoms to disintegrate from InAs and accumulate on the surface of the nanowire; the accumulated As atoms evaporate under the continued laser irradiation. This process reduces the As content in the nanowire. The reduction of As content, in turn, lowers the melting temperature of the nanowire locally and facilitates laser ablation, which eventually fractures the nanowire. The laser irradiation induced changes of the InAs nanowires are attributed to the local temperature rises due to the irradiation, as confirmed by the Raman peak shifts. The results from this work show that in situ Raman spectroscopy mapping can provide detailed information about the entire process of laser-induced change and ablation of InAs nanowires and has the potential to become a powerful tool for the characterization of laser modification of nanowires and other nanometer-sized objects.     

金属Ni纳米线凝固行为的分子动力学模拟

采用EAM镶嵌原子作用势，通过经典的分子动力学模拟方法研究了不同冷却速度下的金属Ni纳米线的凝固行为，并给出了纳米线在凝固区域的结构演变过程.利用键对分析技术研究了在不同冷却速度下体系中的原子团簇在降温过程中的变化情况.研究表明，纳米线的凝固起始于表面原子，并且随着冷却速度的降低，Ni纳米线的微观结构从非晶态过渡到多壳螺旋结构，最终达到稳定的面心立方结构.多壳螺旋结构同时具有确定的结晶温度和长程无序、短程有序的非晶结构的特征. 关键词： 纳米线 凝固行为 分子动力学 键对分析     

Novel structures and properties of gold nanowires

The structures of free-standing gold nanowires are studied by using molecular-dynamics-based genetic algorithm simulations. Helical and multiwalled cylindrical structures are found for the thinner nanowires, while bulk-like fcc structures eventually form in the thicker nanowires up to 3 nm in diameter. This noncrystalline-crystalline transition starts from the core region of nanowires. The vibrational, electronic, and transport properties of nanowires are investigated based on the optimal structures. Bulklike behaviors are found for the vibrational and electronic properties of the nanowires with fcc crystalline structure. The conductance of nanowires generally increases with wire diameter and depends on the wire structure.     

Thermal stability of silicon nanowires: atomistic simulation study

Using the Stillinger--Weber (SW) potential model, we investigate the thermal stability of pristine silicon nanowires based on classical molecular dynamics (MD) simulations. We explore the structural evolutions and the Lindemann indices of silicon nanowires at different temperatures in order to unveil atomic-level melting behaviour of silicon nanowires. The simulation results show that silicon nanowires with surface reconstructions have higher thermal stability than those without surface reconstructions, and that silicon nanowires with perpendicular dimmer rows on the two (100) surfaces have somewhat higher thermal stability than nanowires with parallel dimmer rows on the two (100) surfaces. Furthermore, the melting temperature of silicon nanowires increases as their diameter increases and reaches a saturation value close to the melting temperature of bulk silicon. The value of the Lindemann index for melting silicon nanowires is 0.037.     

First principles study on the electronic structure and effect of vanadium doping of BN nanowires

The electronic structure and effect of vanadium doping of BN nanowires are studied by first principles calculations. For the pure nanowires, it can be found that B atoms move inwards whereas N atoms move outwards, and BN nanowires have a constant band gap about 4.08 eV with larger diameter. The above-mentioned features are in agreement with those of BN nanotubes. We also find that the pure nanowires become more and more stable with increasing diameter. For V-doped BN nanowires, the V atoms move outwards, and the total energies of pair V-doped BN nanowires indicate that the ferromagnetic ground state, and the electronic structures show half-metallicity. The majority of total spin magnetic moments originate from V atoms, and B atoms which near dopant have a little contribution, while N atoms provide a little reverse magnetic moment. This study may be useful in spintronics and nanomagnets.     

碳纳米管-硅纳米线复合结构的形成和热稳定性

通过分子动力学方法模拟了在碳纳米管内填充一定数目的半导体元素硅形成碳纳米管-硅纳米线复合结构的过程,并采用Lindemann指数研究了这种复合结构的热稳定性．计算结果表明,当考虑碳纳米管和硅纳米线轴向方向的周期性边界条件之后,在C（13,0）和C （14,0）碳纳米管内能够形成亚稳结构的硅纳米线Si₁₆NW和Si₂₀NW,从而获得一种碳纳米管-硅纳米线的新型复合结构．通过计算这种复合结构的Lindemann指数,可以看到由于碳纳米管的保护作用,碳纳米管包裹的硅纳 关键词： 复合结构 纳米线 碳纳米管 分子动力学