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1.
La0.33Pr0.34Ca0.33MnO3薄膜的应变效应   总被引:1,自引:0,他引:1       下载免费PDF全文
采用脉冲激光沉积法分别在(100)LaAlO3和(100)SrTiO3基片上生长了La0.33Pr0.34Ca0.33MnO3 薄膜,并通过磁测量和电输运测量对生长在不同基片上的La0.33Pr0.34Ca0.33MnO3薄膜的物性进行了研究.结果表明,基片和薄膜之间的压应力导致La0.33Pr0.34Ca0.33MnO3薄膜容易出现铁磁相,而电荷有序相则被抑制.基片和薄膜之间的张应力则导致La0.33Pr0.34Ca0.33MnO3薄膜容易出现电荷有序相,铁磁相被抑制.导致该现象的可能原因之一是应力使得晶格中Mn-O键角发生改变而引起双交换作用的改变.  相似文献   

2.
在1064 nm波长脉冲激光(脉宽25 ps)的照射下,钙钛矿氧化物薄膜La0.67Ca0.33MnO3/SrTiO3具有超快光电效应,对激光脉冲显示ps量级的响应时间,上升沿响应时间300 ps,半高宽700 ps,同时,对激光能量的响应灵敏度为500 mV/mJ。  相似文献   

3.
戴闻 《物理》1999,28(2):127-128
某些材料在一定条件下,其电子电荷可以通过自组织形成条纹相(stripephase).钙钛矿结构过渡金属氧化物晶格的ab平面是正方对称的,因此任何与周期晶格相关的物理性质理应具有四度轴的旋转对称性.然而,条纹相却与上述直观的推论大相径庭,它看上去像是“...  相似文献   

4.
通过超声与低频切变模量测量,得到多晶锰氧化物La0.2Ca0.8MnO3材料纵向模量与切变模量随温度变化关系曲线,发现在电荷有序转变温度附近,纵向模量与切变模量都出现最小值.运用合作Jahn-Teller效应理论对实验数据进行了拟合,发现理论与实验曲线符合较好,表明Jahn-Teller效应是发生电荷有序状态转变的主要机制之一.  相似文献   

5.
采用脉冲激光沉积法分别在(100)LaAlO3和(100)SrTiO3基片上生长了La0.33Pr0.34Ca0.33MnO3薄膜,并通过磁测量和电输运测量对生长在不同基片上的La0.33Pr0.34Ca0.33MnO3薄膜的物性进行了研究.结果表明,基片和薄膜之间的压应力导致La关键词: 钙钛矿锰氧化物 相分离 电荷有序  相似文献   

6.
采用高温固态反应法制备了具有钙钛矿结构的锰氧化物La0.67Ca0.33MnO3,利用X射线衍射、超导量子干涉仪等实验技术研究其结构和磁性质。应用标度律对起依赖于磁场的始磁化强度在t→0时的行为用临界指数β随磁场变化进行描述。临界指数β随着磁场的增大而减小,说明在临界点附近,磁场的增大导致自旋有序度的增加。  相似文献   

7.
本文使用脉冲激光沉积方法在正交的NdGaO3(001)衬底上外延生长了La0.67Cao.33MnO3薄膜.退火后,由于外延应变引起薄膜正交畸变增强,薄膜在低于250K的整个温度区间都出现了铁磁金属态和反铁磁绝缘态的相分离和相竞争.这两相的竞争强烈依赖于磁场相对晶轴的方向,由此导致存在于很宽温度范围内的低场各向异性磁阻...  相似文献   

8.
The perovskite bilayers La0.67Ca0.33MnO3 (LCMO) (100 nm) / La0.67Sr0.33MnO3(LSMO) (100 nm) and LSMO (100 nm) / LCMO (100 nm) are fabricated by a facing-target sputtering technique. Their transport and magnetic properties are investigated. It is found that the transport properties between them are different obviously due to distinguishable structures, and the different lattice strains in both films result in the difference of metal-to-insulator transition. Only single-step magnetization loop appears in our bilayers from 5K to 320K, and the coercive force of LSMO/LCMO varies irregularly with a minimum ~ 2387A/m which is lower than that of LCMO and LSMO single layer films. The behaviour is explained by some magnetic coupling.  相似文献   

9.
在厚度为25-400nm范围内,系统地研究了(001)SrTiO3(STO),(001)LaAlO3(LAO)衬底上La0.67Ca0.33MnO3(LCMO)薄膜的电输运与居里温度TC随薄膜厚度及衬底的变化.结果表明,随薄膜变薄,电阻率ρ增加,TC降低.对于同一薄膜厚度,LCMO/STO薄膜的ρ大于LCMO/LAO基上的薄膜的ρ.TC与衬底的依赖关系则与ρ相反.分析表明,LCMO薄膜的低温区电阻温度(ρ-T)符合关系式ρ=ρ0+Bωs/sinh2(hωs/2/kBT)+CTn,其中ρ0为剩余电阻;等号右端第二项反映软光学模声子对电子散射的贡献;第三项包括其余可能散射机理在电输运过程中所起的作用;B,ωs(软光学模声子的平均频率)与C都为拟合系数.高温区的电输运则由小极化子跃迁模型ρ=DT×exp(Ea/kBT)描述(Ea为极化子激发能).根据ρ0,ωs,Ea以及TC变化,初步讨论了薄膜中的厚度与应变效应.进一步研究发现ωs,Ea的变化与TC相关,从而说明极化子效应为影响TC变化的主要因素.  相似文献   

10.
在La0.67Ca0.33MnO3(LCMO)纳米颗粒体系中,采用Cu与之复合,考察复合对磁电阻性能的影响.结果表明,复合使低场磁电阻得到大幅度的增强.但和其它LCMO复合体系截然不同的是,复合体系的电阻率大幅下降.认为是在LCMO颗粒周围形成一层良导体,电子输运与颗粒边界的电子散射有关.  相似文献   

11.
用回相反应法制备了La0.4Ca0.6M1-xCrxO3(x=0.00,0.06,0.10)多晶样品.通过XRD、M~T曲线、ESR谱线,研究了Cr替代Mn对La0.4Ca0.6MnO3磁性质的影响及在CE型反铁磁体系中的电荷序和自旋序之间的耦合相互作用.研究结果表明:母体La0.4Ca0 6MnO3磁结构很复杂,在2...  相似文献   

12.
用固相反应法制备了La0.4Ca0.6Mn1-xCrxO3(x=0.00,0.08)多晶样品,通过XRD谱、M-T曲线、ρ~T曲线、Lnρ-T-14曲线,研究Cr^3+替代Mn3+对La0.4Ca0.6MnO3电荷有序相及电输运性质的影响.实验结果表明:Cr^3+替代Mn3+对La0.4Ca0.6MnO3电荷有序相影响...  相似文献   

13.
采用固相反应法成功制备了Mo低掺杂La0.67Sr0.33Mn1-xMoxOc(x=0,0.02)单相多晶样品,系统研究了样品的磁性、电输运特性和磁电阻效应.发现Mo低掺杂对La0.67Sr0.33MnO3 的居里温度影响很小,但在La0.67Sr0.33MnO3铁磁基态背景下诱导出团簇自旋玻璃态行为.在低温区(0.1相似文献   

14.
The anisotropic transport property was investigated in a phase separation La_(0.67)Ca_(0.33)MnO_3(LCMO) film grown on(001)-oriented Nd GaO_3(NGO) substrate. It was found that the resistivity along the b-axis is much higher than that along the a-axis. Two resistivity peaks were observed in the temperature dependent measurement along the b-axis, one located at 91 K and the other centered at 165 K. Moreover, we also studied the response of the resistivities along the two axes to various electric currents, magnetic fields, and light illuminations. The resistivities along the two axes are sensitive to the magnetic field. However, the electric current and light illumination can influence the resistivity along the b-axis obviously, but have little effect on the resistivity along the a-axis. Based on these results, we believe that an anisotropicstrain-controlled MnO_6 octahedra shear-mode deformation may provide a mechanism of conduction filaments paths along the a-axis, which leads to the anisotropic transport property.  相似文献   

15.
采用溶胶 凝胶法制备了系列La0 .8-xCa0 .2 MnO3 多晶样品 ,用X射线衍射分析确定了样品的钙钛矿结构 ,用透射电子显微镜观察了样品的形貌及粒径分布情况 ,用PAR15 5型振动样品磁强计测量了样品的磁性随外场和温度的变化 ,确定样品的居里温度并计算了各样品的磁熵变 .磁测量及计算结果表明制备的各样品的居里温度在180— 2 6 0K的范围内且随焙烧温度和La3 离子空位浓度的不同而变化 ,不同温度焙烧的样品均有较大的磁熵变值 ,其中 110 0℃焙烧的La0 77Ca0 .2 MnO3,多晶样品在 2 40 5K ,H =1 0T的外场下的磁熵变达 3 76J/kg·K ,对实验结果做了定性的分析 .该材料具有较高的居里温度和较大的磁熵变 ,所需外场强度适中 ,电阻率高 ,性能稳定 ,适合做高温磁制冷材料 .  相似文献   

16.
厚度为7~100nm La0.7Sr0.3MnO3(LSMO)薄膜是由脉冲激光法生长在(001)(LaAlO3)0.3(Sr2AlTaO6)0.7(LSAT)衬底上.薄膜的结构演变是由高分辨X-射线ω-摇摆曲线及倒易空间(103)反射来表征.我们的结果表明所有的LSMO薄膜是共格生长在LSAT(001)上.对厚度大于(或等于)22nm的LSMO薄膜既显示可调制的单斜(MA)结构,也包含切应变弛豫诱导的有序畴结构和平面内超格子.薄膜的厚度依赖的结构畴宽,以及切应变对薄膜居里温度Tc的影响被仔细研究.作为对比,晶格失配对LSMO薄膜中周期畴形成的影响也被讨论.  相似文献   

17.
孙颖慧  赵永刚  王荣明 《中国物理 B》2017,26(4):47103-047103
The electroresistance(ER) of La_(0.36)Pr_(0.265)Ca_(0.375)MnO_3(LPCMO) epitaxial thin film was studied under various dc currents.The current effect was compared for the unpatterned film and patterned microbridge with a width of 50 μm.The value of ER in the unpatterned LPCMO film could reach 0.54 under a 1-mA current,which is much higher than ER under 1 mA for the patterned weak phase-separated La_(0.67)Ca_(0.33)MnO_3 and La_(0.85)Sr_(0.15)MnO_3 microbridges with 50-μm width.More interestingly,for the patterned LPCMO microbridge,the maximum of ER can reach 0.6 under a small current of 100 μ.A.The results were explained by considering the coexistence of ferromagnetic metallic phase with the charge-ordered phase,and the variation of the phase separation with electric current.  相似文献   

18.
Micro-patterning is considered to be a promising way to analyze phase-separated manganites. We investigate resistance in micro-patterned La0.325Pr0.3Ca0.375MnO3 wires with width of 10 μm, which is comparable to the phase separation scale in this material. A reentrant of insulating state at the metal–insulator temperature Tp is observed and a giant resistance change of over 90% driven by electric field is achieved by suppression of this insulating state. This resistance change is mostly reversible. The I–V characteristics are measured in order to analyze the origin of the giant electroresistance and two possible explanations are proposed.  相似文献   

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