Photoemission study of electronic structure evolution across the metal-insulator transition of heavily B-doped diamond

We studied the electronic structure evolution of heavily B-doped diamond films across the metal-insulator transition (MIT) using ultraviolet photoemission spectroscopy (UPS). From high-temperature UPS, through which electronic states near the Fermi level (E_F) up to ∼5k_BT can be observed (k_B is the Boltzmann constant and T the temperature), we observed the carrier concentration dependence of spectral shapes near E_F. Using another carrier concentration dependent UPS, we found that the change in energy position of sp-band of the diamond valence band, which corresponds to the shift of E_F, can be explained by the degenerate semiconductor model, indicating that the diamond valence band is responsible for the metallic states for samples with concentrations above MIT. We discuss a possible electronic structure evolution across MIT.     

Low-temperature STM/STS studies on boron-doped (1 1 1) diamond films

We have performed scanning tunneling microscopy/spectroscopy (STM/STS) experiments on (1 1 1)-oriented epitaxial films of heavily boron-doped diamond (T_c∼5.4 K). We present that tunneling conductance spectra show temperature-dependent spatial variations. In the low-temperature region (T=0.47 K), the tunneling spectra do not show strong spatial dependence and a superconducting energy gap is observed independent of the surface morphology. In the high-temperature region (T=4.2 K), on the other hand, the tunneling conductance spectra show significant spatial dependence, indicating the inhomogeneous distribution of the superconducting property due to the distribution of boron atoms.     

The influence of out-of-plane disorder on the formation of pseudogap and Fermi arc in Bi2Sr2−xRxCuOy (R=La and Eu)

We found that the length of the Fermi arc decreases with increasing out-of-plane disorder by performing angle resolved photoemission spectroscopy (ARPES) measurements in the superconducting state of optimally doped R=La and Eu samples of Bi₂Sr_2−xR_xCuO_y. Since out-of-plane disorder stabilizes the antinodal pseudogap as was shown in our previous study of the normal state, the present results indicate that this antinodal pseudogap persists into the superconducting state and decreases the Fermi arc length. We think that the shrinkage of the Fermi arc reduces the superfluid density, which explains the large suppression of the superconducting transition temperature when out-of-plane disorder is increased.     

Physical properties of the cubic spinel LiMn2O4

We have performed an ab initio study of structural, electronic, magnetic, vibrational and thermal properties of the cubic spinel LiMn₂O₄ by employing the density functional theory, the linear-response formalism, and the plane-wave pseudopotential method. An analysis of the electronic structure with the help of electronic density of states shows that the density of states at the Fermi level (N (E_F)) is found to be governed by the Mn 3d electrons with some contributions from the 2p states of O atoms. It is important to note that the contribution of Mn 3d states to N(_EF)$N\left(E_F\right)$ is as much as 85%. From our phonon calculations, we have obtained that the main contribution to phonon density of states (below 250 cm⁻¹) comes from the coupled motion of Mn and O atoms while phonon modes between 250 cm⁻¹ and 375 cm⁻¹ are characterized by the vibrations of all the three types of atoms. The contribution from Li increases rapidly at higher frequency (above 375 cm⁻¹) due to the light mass of this atom. Finally, the specific heat and the Debye temperature at 300 K are calculated to be 249.29 J/mol K and 820.80 K respectively.     

Fano line shape and anti-crossing of Raman active E2g peaks in the charge density wave state of NbSe2

Low energy Raman scattering from the ab-plane of the 2H polytype single crystal NbSe₂ has been investigated in the normal (N), incommensurate charge density wave (ICDW) and superconducting (SC) phases. The temperature dependence of the polarization resolved Raman response has been obtained for the excitation wavelength of 647 nm and fitted to phenomenological models for the E_2g and A_1g symmetry channels. The A_1g response can be fitted by a simple damped oscillator peak superimposed on continuous background. The E_2g response displays an anti-resonance interference pattern between the inter-layer phonon and the CDW-induced mode such that a hybridized configuration (Fano line shape [1]) is required for modelling. The polarization specific peak maxima positions and line widths as a function of temperature, deduced in this manner, are presented. Partial suppression of the electronic continuum scattering in the Raman shift range up to 110 cm⁻¹ in the A_1g symmetry channel and beyond 300 cm⁻¹ in the E_2g symmetry channel is indicative of high energy electronic states far away from the Fermi surface participating in the ICDW formation.     

Electrical and optical properties of GexFexSe100−2x chalcogenide thin films

Optical absorption at room temperature and electrical conductivity at temperatures between 283 and 333 K of vacuum evaporated Ge_xFe_xSe_100−2x (0≤x≤15) amorphous thin films have been studied as a function of composition and film thickness. It was found that the optical absorption is due to indirect transition and the energy gap increases with increasing both Ge and Fe content; on the other hand, the width of the band tail exhibits the opposite behavior. The optical band gap E_opt was found to be almost thickness independent. The electrical conductivity show two types of conduction, at higher temperature the conduction is due to extended states, while the conduction at low temperature is due to variable range hopping in the localized states near Fermi level. Increasing Ge and Fe contents were found to decrease the localized state density N(E_F), electrical conductivity and increase the activation energy for conduction, which is nearly thickness independent. Variation of the atomic densities ρ, molar volume V, glass transition temperature T_g cohesive energy C.E and number of constraints N_Co with average coordination number Z was investigated. The relationship between the optical gap and chemical composition is discussed in terms of the cohesive energy C.E, average heat of atomization and coordination numbers.     

A pseudopotential approach to the superconducting state parameters of (Ni33Zr67)1? x M x (M=Ti, V, Co, Cu) ternary metallic glasses

Superconductivity in ternary metallic glasses has been investigated using the model pseudopotential approach, which has been found quite successful in explaining superconductivity in metals, binary alloys and binary glasses. It is observed that this simple methodology successfully explains superconducting behaviour of ternary glasses without requiring the solution of Dirac equation for a many body problem or estimation of various interactions as required in ab-initio pseudopotential theory. In the present work superconducting state parameters of fourteen metallic glasses of (Ni-Zr)-M system (M=Ti, V, Co, Cu) have been determined in the BCS-Eliashberg-McMillan framework. It is observed that addition of V, Co, and Cu as the third element (M) to a binary metallic glass (Ni₃₃ Zr₆₇) causes the parameters λ,T _c, α, andN ₀ V to decrease, and Coulomb pseudopotential (μ*) to increase with concentration of M, showing that the presence of third element (M) causes suppression of superconducting behaviour of the alloy. The decrease inT _c with increasing concentration of third element (M) may be attributed to the modifications in density of states at the Fermi levelN(E _F), and probable changes in the band structure of the alloy due to addition of the third element (M). Slight difference is noticed when Ti is added to the Ni₃₃ Zr₆₇ alloy. In this caseT _c rises initially and then decreases with concentration of M, showing a peak at aboutx=0.05. This indicates that on addition of Ti, 3d states grow near the Fermi level and hence contribute substantially toN(E _F), favouring superconducting behaviour in this case. The present results forT _c show an excellent agreement with the experimental data. QuadraticT _c equations have been proposed, which provide successfully theT _c values of ternary metallic glasses under consideration. Paper presented at National Conference on Current Trends in Condensed Matter Research, Warangal, India, September 20–22, 2004.     

First principles simulations of energy and polarization dependent angle-resolved photoemission spectra of Bi2212

We discuss first-principles simulations of angle-resolved photoemission (ARPES) intensity in Bi2212 where the photoexcitation process is modeled realistically by taking into account the full crystal wavefunctions of the initial and final states in the presence of the surface. Some recent results aimed at understanding the effects of the energy and polarization dependencies of the ARPES matrix element are presented. The nature of the Fermi surface (FS) maps obtained via ARPES by holding the initial state energy fixed at the Fermi energy (E_F) is clarified. The theoretically predicted FS map at 21 eV photon energy displays a remarkable level of agreement with the corresponding ARPES spectrum taken over a large area of the (k_x,k_y) plane. Our analysis shows how the ARPES matrix element can help disentangle closely spaced energy levels and FS sheets and highlight different aspects of the electronic spectrum in complex materials under various experimental conditions.     

Charge-density-wave partial gap opening in quasi-2D KMo6O17 purple bronze studied by angle resolved photoemission spectroscopy

Low dimensional (LD) metallic oxides have been a subject of continuous interest in the last two decades, mainly due to the electronic instabilities that they present at low temperatures. In particular, charge density waves (CDW) instabilities associated with a strong electron-phonon interaction have been found in Molybdenum metallic oxides such as KMo₆O₁₇ purple bronze. We report an angle resolved photoemission (ARPES) study from room temperature (RT) to T ∼40 K well below the Peierls transition temperature for this material, with CDW transition temperature T_CDW ∼120 K. We have focused on photoemission spectra along ΓM high symmetry direction as well as photoemission measurements were taken as a function of temperature at one representative k_F point in the Brillouin zone in order to look for the characteristic gap opening after the phase transition. We found out a pseudogap opening and a decrease in the density of states near the Fermi energy, E_F, consistent with the partial removal of the nested portions of the Fermi surface (FS) at temperature below the CDW transition. In order to elucidate possible Fermi liquid (FL) or non-Fermi liquid (NFL) behaviour we have compared the ARPES data with that one reported on quasi-1D K_0.3MoO₃ blue bronze.     

First-principles investigation of pressure-induced changes in structural and electronic properties of Y 2C3 superconductor

The structural and electronic properties of Y ₂C₃ superconductor under different external pressures were calculated by employing the first-principles method. This shows that the lattice constants as well as the lengths of C-C dimers decrease with the pressure. Results of band structure calculations indicate that the Fermi level advances to the bonding zone with an increase in pressure; meantime, the valence and conduction bands intersect more deeply with the Fermi level. Moreover, the Fermi level is found to shift from the valley bottom of the density of states (DOS) curve to the shoulder, which means an increase in N(E_F), and therefore the critical temperature, T_c. The calculations verify that the critical temperature is directly related to the electronic structure.     

Pseudogap and Superconducting Gap in SmFeAs（O1-xFx） Superconductor from Photoemission Spectroscopy

High resolution photoemission measurements are carried out on non-superconducting SmOFeAs paxent compound and superconducting SmFeAs（O1-xFx） （x = 0.12, and 0.15） compounds. The momentum-integrated spectra exhibit a clear Fermi cutoff that shows little leading-edge shift in the superconducting state. A robust feature at 13 meV is identified in all these samples. Spectral weight suppression near IF, F with decreasing temperature is observed in both undoped and doped samples that points to a possible existence of a pseudogap in these Fe-based compounds.     

Temperature dependence of electrical resistivity for Ca-doped perovskite-type Y1−xCaxCoO3 prepared by sol-gel process

The temperature dependences of DC electrical resistivity for perovskite-type oxides Y_1−xCa_xCoO₃ (0?x?0.1), prepared by sol-gel process, were investigated in the temperature range from 20 K up to 305 K. The results indicated that with increase of doping content of Ca the resistivity of Y_1−xCa_xCoO₃ decreased remarkably, which was found to be caused mainly by increase of carrier (hole) concentration. In the whole temperature range investigated the temperature dependence of resistivity ρ(T) for the un-doped (x=0) sample decreased exponentially with decreasing temperature (i.e. ln ρ∝1/T), with a conduction activation energy ; the resisitivity of lightly doped oxide (x=0.01) possessed a similar temperature behavior but has a reduced E_a (0.155 eV). Moreover, experiments showed that the relationship ln ρ∝1/T existed only in high-temperature regime for the heavily doped samples (T?82 and ∼89 K for x=0.05 and 0.1, respectively); at low temperatures Mott's ln ρ∝T^−1/4 law was observed, indicating that heavy doping produced strong random potential, which led to formation of considerable localized states. By fitting of the experimental data to Mott's T^−1/4 law, we estimated the density of localized states N(E_F) at the Fermi level, which was found to increase with increasing doping content.     

Electronic structure of new multiple band Pt-pnictide superconductors APt3P

We report LDA calculated band structure, densities of states and Fermi surfaces for recently discovered Pt-pnictide superconductors APt₃P (A = Ca, Sr, La), confirming their multiple band nature. Electronic structure is essentially three dimensional, in contrast to Fe pnictides and chalcogenides. LDA calculated Sommerfeld coefficient agrees rather well with experimental data, leaving little space for very strong coupling super-conductivity, suggested by experimental data on specific heat of SrPt₃P. Elementary estimates show, that the values of critical temperature can be explained by rather weak or moderately strong coupling, while the decrease in superconducting transition temperature T _c from Sr to La compound can be explained by corresponding decrease in total density of states at the Fermi level N(E _F). The shape of the density of states near the Fermi level suggests that in SrPt₃P electron doping (such as replacement Sr by La) decreases N(E _F) and T _c , while hole doping (e.g., partial replacement of Sr with K, Rb or Cs, if possible) would increase N(E _F) and possibly T _c .     

The magnetism for NN AFM ground state in Fe-based superconductor: Sr1−xKxFe2As2

The crystal structure, magnetism properties, and density of states for FeAs layered compound SrFe₂As₂ have been investigated by using the density functional theory (DFT) method. The magnetism under a checkerboard nearest neighbor anti-ferromagnetic (NN AFM) and ferromagnetic (FM) order ground-state have been analyzed with substitution for Sr with K ion in Sr_1−xK_xFe₂As₂. The results indicate that the distortion of FeAs tetrahedrons is sensitive to the electron doping concentration. The system magnetism was suppressed by K doping in NN-AFM ground state instead of FM. The density of states at Fermi level N(E_F) under NN AFM ground state would be regarded as a driving force for the increased T_c of Sr_1−xK_xFe₂As₂ system as observed experimentally. Our calculation reflects that NN AFM type spin fluctuation may still exist in the Sr_1−xK_xFe₂As₂ system and it may be an origin of strong spin fluctuation in this system besides the spin density wave (SDW) states.     

Preparation of REFeAsO1−xFx (RE=Sm and Gd) superconductors at a relatively low temperature

A series of the SmFeAsO_1−xF_x and GdFeAsO_1−xF_x (x=0.05, 0.1, 0.15, 0.2, 0.25) samples have been prepared using nano-scaled ReF₃ as the fluorine resource at a relatively low temperature. The samples have been sintered at 1100 and 1120 °C for SmFeAsO_1−xF_x and GdFeAsO_1−xF_x, respectively. These temperatures are at least 50-60° lower than other previous reports. All of the so-prepared samples possess a tetragonal ZrCuSiAs-type structure. Dramatically supression of the lattice parameters and increase in T_c proved that this low temperature process was more effective to introduce fluorine into R_EFeAsO. Superconducting transition appeared at 39.5 K for SmFeAsO_1−xF_x with x=0.05 and at 22 K for GdFeAsO_1−xF_x with x=0.1. The highest T_c was detected to be 54 K in SmFeAsO_0.8F_0.2 and 40.2 K in GdFeAsO_0.75F_0.25. The use of the nano-scaled ReF₃ compounds has improved the efficiency of the present low temperature method in synthesizing the fluorine-doped iron-based superconductors.     

Carbon doping in MgB2: role of boron and carbon px(y) bands

We have studied the changes in the electronic structure and the superconducting transition temperature T_c of Mg(B_1−xC_x)₂ alloys as a function of x with 0≤x≤0.3. Our density-functional-based approach uses the coherent-potential approximation to describe the effects of disorder, the Gaspari-Gyorffy formalism to estimate the electron-phonon matrix elements and the Allen-Dynes equation to calculate T_c in these alloys. We find that the changes in the electronic structure of Mg(B_1−xC_x)₂ alloys, especially near the Fermi energy E_F, come mainly from the outward movement of E_F with increasing x, and the effects of disorder in the B plane are small. In particular, our results show a sharp decline in both B and C p_x(y) states for 0.2≤x≤0.3. Our calculated variation in T_c of Mg(B_1−xC_x)₂ alloys is in qualitative agreement with the experiments.     

Degradation of superconducting properties in MgB2 by Cu addition

The (MgB₂)_2−xCu_x (x=0-0.5) superconducting system was prepared by a solid-state reaction technique. Microstructural evolution and transport properties including resistivity versus temperature up to a magnetic field of 6 T, activation energy, thermoelectric power and Fermi energy, E_F, and the corresponding velocity, V_F, values of the samples prepared were also investigated. The XRD analysis showed a multiphase formation and no detectable solution of Cu in MgB₂. Two different impurity phases, MgCu₂ and CuB₂₄, have been identified and their peak intensity increased when the Cu concentration increased. The temperature dependence of the resistivity of the samples showed a metallic behavior down to T_c. But, for the Cu concentrations above 0.3 the superconducting phase transition completely disappeared. The magnetic field strongly affects the electrical properties. For x=0.0 samples, the transition is found to be sharp, ΔT∼1 K, but it becomes broader with increasing magnetic field and Cu concentration. The calculated values of carrier concentration, n, of the samples are showed a sharp decrease with increasing Cu content. For x=0.0 sample the n was calculated to be 12×10²¹ cm⁻³, but for the x=0.5 sample it decreased to 1.3×10²¹ cm⁻³. We found that the activation energy, U(B), decreased sharply with increasing magnetic field. According to thermoelectric power and Fermi energy, E_F, calculations the decrease of the carrier concentration by the additions of Cu into MgB₂ gives a decrease in E_F and this could be attributed to a shift of the Fermi level towards the top of the σ-hole band.     

Spin-polarized metastable deexcitation spectroscopy study of iron films

A spin-polarized metastable deexcitation spectroscopy apparatus using a nozzle-skimmer pulsed discharge metastable atom source was developed. The oxygen adsorption dependence of the surface magnetism of thin iron films deposited on MgO(100) was investigated using this apparatus. The surface local density of states spilling towards the vacuum (SDOS) at around the Fermi energy, E_F, for the clean surface shows a negative polarization to the bulk. The oxygen derived SDOS for the lightly oxygen adsorbed surfaces (2–10 L) also shows a negative polarization while the SDOS at E_F changes its polarity to positive. The polarization of SDOS is not detected for the heavily oxidized surfaces (20–100 L).     

Surface electronic structure of the organic superconductor κ-(ET)2Cu(NCS)2 studied via photoemission microscopy

The surface electronic structure of cleaved single crystals of the organic superconductor κ-(ET)₂Cu(NCS)₂ has been studied using photoemission microscopy. Two types of cleaved surfaces were observed, displaying different valence band photoemission spectra and different spectral behavior near the Fermi level, E_F. In particular, spectra from one surface type display relatively broad spectral features in the valence band and finite spectral intensity at E_F, while spectra from the other surface type show well-defined valence band emission features and zero photoemission intensity at E_F. We propose that the spectral differences are due to a very short electron mean free path in this material, and our results are used to explain the differences between previously published photoemission spectra from this superconductor. We also report the results of an investigation of the electronic structure of defects in this material.     

Coherent transmission of nodal Dirac fermions through a graphene-based superconducting double barrier junction

Transport characteristics of relativistic electrons through graphene-based d-wave superconducting double barrier junction and ferromagnet/d-wave superconductor/normal metal double junction have been investigated based on the Dirac–Bogoliubov–de Gennes equation. We have first presented the results of superconducting double barrier junction. In the subgap regime, both the crossed Andreev and nonlocal tunneling conductance all oscillate with the bias voltage due to the formation of Andreev bound states in the normal metal region. Moreover, the critical voltage beyond which the crossed Andreev conductance becomes to zero decreases with increasing value of superconducting pair potential α. In the presence of the ferromagnetism, the MR through graphene-based ferromagnet/ d-wave superconductor/normal metal double junction has been investigated. It is shown that the MR increases from exchange splitting h ₀=0 to h ₀=E _F (Fermi energy), and then it goes down. At h ₀=E _F, MR reaches its maximum 100. In contrast to the case of a single superconducting barrier, Andreev bound states also manifest itself in the zero bias MR, which result in a series of peaks except the maximum one at h ₀=E _F. Besides, the resonance peak of the MR can appear at certain bias voltage and structure parameter. Those phenomena mean that the coherent transmission can be tuned by superconducting pair potential, structure parameter, and external bias voltage, which benefits the spin-polarized electron device based on the graphene materials.