双向掺铒光纤放大器的特性分析

讨论了双向掺铒光纤放大器的结构方案,利用考虑放大的自发辐和北员耗影响的双向掺铒光纤放大器稳态放大速率方程模型分析的增益与掺铒光纤长度、输入信号光功率、帛运光功率及抽运方式等参数之间的关系,研究了单向和双向等功率抽运下正反向噪声系数随正反向信号光输入功率的变化行为。     

Raman generated synchronous short optical pulses for laser-matter interaction diagnostics

Forward and backward stimulated raman scattering (SRS) emitted under 532 nm, 75 ps pulse excitation is amplified by a travelling-wave dye amplifier. Temporal behaviour of the emissions is investigated with a streak camera. The backward raman-strokes emission of ethanol at 633 nm (linewidth 0.15 nm) produces pulses as short as 15 ps. With a rhodamine 640 amplifier, peak power reaches 10 MW under 50 MW excitation.     

掺Er及Yb-Er共掺Al2O3光波导放大器噪音特性的数值模拟

利用由速率方程、有限元场分布、传输方程构建的综合理论模型,数值求解了掺Er及Yb-Er共掺Al2O3光波导放大器的噪音系数和正反向自发辐射功率.结果表明,随波导长度的增加,当增益开始下降时,噪音系数显著增加.同时显示了抽运功率和掺杂浓度对噪音系数的影响,比较了两种掺杂放大器的噪音系数,Yb-Er共掺比只掺Er的约小0.8 dB.     

Characteristics of terahertz slow-wave system with two-dimensional photonic band-gap structure

A terahertz slow-wave system model consists of a photonic crystal with two-dimensional band-gap structure and a slow-wave plate as its periodic unit. The electromagnetic field in the slow-wave system has been numerically simulated. The dispersion relation and the coupled impedance of the backward wave mode in the system have been calculated for a variety of geometric settings. The results indicate that this model would be a promising candidate for the slow-wave system with single stable backward wave mode.     

Emission of terahertz radiation from selectively doped AlGaN/GaN heterostructures under the heating of two-dimensional electrons by an electric field

The emission of terahertz radiation from a AlGaN/GaN heterostructure under the heating of two-dimensional electrons in a lateral electric field is studied. The field dependence of the temperature of hot electrons is determined from an analysis of experimental volt-ampere characteristics. A theoretical model of the thermal radiation of hot two-dimensional electrons is considered, and the calculation results are compared with an experiment on terahertz radiation emission.     

太赫兹片上系统和基于微纳结构的太赫兹超宽谱源的研究进展

目前太赫兹辐射信号的功率不高,辐射带宽也较窄,这些对于生物化学、含能材料的太赫兹检测应用领域来说是一大限制因素,因此如何获得宽谱高功率的太赫兹源对于太赫兹时域光谱系统的发展是非常重要的;另一方面,常规的太赫兹系统是在自由空间传输探测的,测量过程需要在氮气或者干燥空气环境中进行,以克服空气中水的吸收干扰,同时自由空间中的光场与物质相互作用的模式又降低了物质检测的灵敏度,这对于痕量物质检测来说构成了挑战.面对这一问题,太赫兹片上系统利用微纳结构中的局域场效应实现对物质的低浓度检测,此方案有助于解决这一应用难题.综上所述,本文分成以下两部分阐述:首先阐述了纳米金属薄膜作为新的太赫兹源,它可以同时产生非相干的和相干的太赫兹信号,其输出为超过100 THz的太赫兹-红外辐射,功率高达10 mW,这种超宽谱和高功率现象主要是由于非相干的热辐射效应引起的;第二,阐述了基于不同传输线结构、不同基底材料的太赫兹片上系统结构设计和光谱应用.基于共面带状线结构和聚合物材料基底的太赫兹片上系统有着较低的损耗,能够实现超过2 THz带宽的测量和生物化学应用.     

Intraband dynamics and terahertz emission in biased semiconductor superlattices coupled to double far-infrared pulses

This paper studies both the intraband polarization and terahertz emission of a semiconductor superlattice in combined dc and ac electric fields by using the superposition of two identical time delayed and phase shifted optical pulses. By adjusting the delay between these two optical pulses, our results show that the intraband polarization is sensitive to the time delay. The peak values appear again for the terahertz emission intensity due to the superposition of two optical pulses. The emission lines of terahertz blueshift and redshift in different ac electric fields and dynamic localization appears. The emission lines of THz only appear to blueshift when the biased superlattice is driven by a single optical pulse. Due to excitonic dynamic localization, the terahertz emission intensity decays with time in different dc and ac electric fields. These are features of this superlattice which distinguish it from a superlattice generated by a single optical pulse to drive it.     

THz emission from semiconductor surfaces

We provide a review of experimental and theoretical work on electromagnetic terahertz pulse emission from semiconductor surfaces excited by femtosecond laser radiation. The main terahertz emission mechanisms are analysed. The terahertz emission from InAs and Ge is explained by the photo-Dember effect and electric field induced optical rectification. Electronic band structure and carrier scattering mechanisms are investigated by means of terahertz emission and absorption spectroscopy in InAs, InSb and Ge. To cite this article: V.L. Malevich et al., C. R. Physique 9 (2008).     

半绝缘GaAs光电导开关产生太赫兹波电场屏蔽效应的二维Monte Carlo模拟

利用Ensemble-Monte Carlo模拟方法，对不同实验条件下半绝缘GaAs(SI-GaAs)光电导开关作为偶极辐射天线在辐射太赫兹电磁波(太赫兹波)中体内电场的分布以及空间电荷屏蔽效应对太赫兹波辐射的影响进行了模拟.载流子的时域空间电场分布表明:用高能量激光脉冲触发低压偏置的GaAs开关，空间电荷屏蔽是限制太赫兹波辐射功率的一个重要因素，并且空间电荷屏蔽能够引起太赫兹波呈现双极性.当高能量飞秒激光脉冲以全电极间隙触发大孔径光电导天线时，空间电荷电场屏蔽效应对太赫兹波的影响不大. 关键词： 光电导开关 Ensemble-Monte Carlo模拟 辐射场屏蔽 空间电荷屏蔽     

Fractional optical solitons

This Letter shows that soliton propagation can be described by an extended NLS equation which incorporates fractional dispersion and a fractional nonlinearity. The fractional dispersive term is written in terms of Grünwald-Letnikov fractional derivatives (FDs). Forward and backward FDs are introduced in order to satisfy the conservation of energy. It is found that the soliton solutions of this model form a continuous family and are stable. The Vakhitov-Kolokolov criterion is used to confirm the stability of these fractional solitons.     

A structure for enhanced terahertz emission from a photoexcited semiconductor surface

A structure that can provide enhancement of terahertz emission from a semiconductor surface excited with femtosecond laser pulses is proposed. The structure consists of a semiconductor layer on a Si substrate with metal coating on the upper surface of the layer and a Si lens attached to the bottom of the substrate. The semiconductor is excited through a hole in the coating and emits terahertz radiation through the substrate lens. We demonstrate theoretically that the proposed structure can increase the terahertz yield by orders of magnitude as compared to the previously used schemes of terahertz emission from a semiconductor surface.     

Anisotropic emission of interface fluctuation quantum dots

We calculate energy levels, dipole moments and radiative broadening of interface fluctuation quantum dots. For optically allowed states, the dipole moment grows proportionally to the lateral quantum dot radius while the radiative broadening saturates towards the quantum well radiative broadening for large lateral quantum dot radii. This is accompanied by a change in the angular emission pattern, concentrating emission in forward and backward direction. Optically forbidden states do not couple to light propagating in the growth direction yet they may have a considerable radiative broadening due to spontaneous emission in other directions. Received 20 March 2002 Published online 25 June 2002     

Analysis of artificial dielectric lens with metallic rectangular chips for terahertz wave band and physical explanation by periodic model

Optical devices for the terahertz wave band are being developed now and require better designs. This paper analyzes an artificial dielectric lens with metallic rectangular chips for the terahertz wave band. This paper also provides an explanation of the phenomena by use of a periodic model. The periodic analysis model, extracted from the full one by assuming periodicity, confirms the phase delay as the mechanism that produces the focusing effect. Furthermore, the results of the full model confirm that the focusing length is longer with the larger periodicity of rectangular metal chips along the direction transverse to the propagation direction. It also indicates a nonuniform change for the periodicity along the propagation direction and the longer focusing length with narrower rectangular chips. The results of the full model analysis are qualitatively consistent with those of the periodic model one. This implies that the design for an exact size lens is possible through use of the periodic model.     

Comparative study of coherent terahertz emission from Fe/Pt ferromagnetic heterostructures

The ultrafast spin dynamic of in-plane magnetized Fe/Pt films was investigated by terahertz emission spectroscopy. The amplitude of the emitted terahertz wave is proportional to the intensity of the exciting laser beams.Both the amplitude and polarity of the terahertz wave can be adjusted by modifying the external magnetic field.The dependency of the amplitude on external magnetic fields is coincident to the hysteresis loops of the sample.Also, the polarity of the terahertz wave is reversed, as the magnetization orientation is reversed. The superdiffusive transient spin current with an inverse spin Hall effect is attributed to the main mechanism of the terahertz emission.     

Effect of an external electric field on the coherent terahertz emission from multiple filaments in air

We describe the terahertz emission from multiple filaments in air in the presence of an external electric field. A strong enhancement of the radiated terahertz energy is obtained by the combined effect of terahertz field interference and presence of a static electric field.     

Si–LiNbO3–air–metal structure for concentrated terahertz emission from ultrashort laser pulses

A planar Si–LiNbO₃–air–metal structure is proposed as a further development of the highly efficient optical-to-terahertz conversion scheme in sandwich structures that was recently demonstrated. The new structure allows one to collect the terahertz emission into one spatial direction and to control its spectrum by varying an air gap between the metal substrate and the LiNbO₃ layer. While the overall increase in the terahertz generation can reach a factor of 2, the spectral density in the interesting for practical application interval 0.5–1.5 THz can be increased by a factor of 3.5–4.     

Efficacy of proposed 2DEG-based photoconductive antenna using magnetic bias-controlled carrier transport

An externally applied magnetic field was used to induce increased photocarrier transport along the high mobility channel in GaAs/AlGaAs modulation-doped heterostructures (MDH). The terahertz (THz) emission from GaAs/AlGaAs MDH increases with increasing magnetic field, applied parallel to the heterojunction. The THz emission enhancement factors due to the magnetic field in MDH are higher than in undoped GaAs/AlGaAs heterojunction and in bulk SI-GaAs. This demonstrates that properly utilizing the high-mobility channel for carrier transport promises to be a viable design consideration for efficient THz photoconductive antenna (PCA) devices. Moreover, it was observed that for MDH, as well as for an undoped GaAs/AlGaAs heterojunction, the enhancement for one magnetic field direction is greater than the enhancement for the opposite direction. This is in contrast to the symmetric enhancement with magnetic field direction observed in a bulk SI-GaAs. An analysis of photocarrier trajectories under an external magnetic field supports the explanation that the enhancement asymmetry with magnetic field direction in MDH is due to the cycloid motion of electrons as affected by the GaAs/AlGaAs interface.     

高效率受激喇曼散射源

本文报道在有机溶液(CH₃)₂SO中,用宽带5314埃激光泵浦,得到强6296埃斯托克斯相干受激喇曼辐射的实验。在中等泵浦功率密度下,受激喇曼斯托克斯辐射前向波能量转换效率达38％,观察到了后向斯托克斯受激辐射,后向波强度是前向散射波强度的80％,测量了前向散射的增益为2.5×10^-3厘米/兆瓦,测量了前向、后向散射光束的空间分布。论证了后向散射光束方向性的改善。 关键词：     

Far-field emission of a semiconductor nanowire laser

The polarization properties and angular distribution of intensity of the far fields from a nanowire laser are investigated. The far-field emission depends strongly on the mode type (HE11, TE01, TM01) and the radius of the nanowire. The emission is weakly directional, and a large part of it can be emitted in the backward direction. Our results can be applied for experimental determination of a lasing mode by its far fields as well as for optimization of laser emission.     

Optical generation of terahertz plasmons on comb-shaped surface of metal

The possibilities of a recently proposed (Opt. Express 17, 9323 (2009)) method for generating terahertz surface plasmons on a microstructured (comb-shaped) metal surface using a nonlinear polarization pulse that moves with a superluminal velocity and is induced by an ultrashort laser pulse in a strip of electrooptic material deposited on the surface are theoretically studied. For an arbitrary direction of motion of the nonlinear source along the comb-shaped surface, fields of excited terahertz plasmons and the angular spectral distribution of the radiated energy are calculated. It is shown that the spectral and energy characteristics of plasmons can be efficiently controlled by varying the direction of motion of the source. Conditions (parameters of the comb-shaped structure, direction and velocity of motion of the source) that ensure the maximal efficiency of the optical-to-terahertz conversion are found. The developed method of terahertz generation is promising for surface terahertz spectroscopy.