ELDRS and dose-rate dependence of vertical NPN transistor

The enhanced low-dose-rate sensitivity (ELDRS) and dose-rate dependence of vertical NPN transistors are investigated in this article.The results show that the vertical NPN transistors exhibit more degradation at low dose rate,and that this degradation is attributed to the increase on base current.The oxide trapped positive charge near the SiO2-Si interface and interface traps at the interface can contribute to the increase on base current and the two-stage hydrogen mechanism associated with space charge effect can well explain the experimental results.     

ELDRS and dose-rate dependence of vertical NPN transistor

The enhanced low-dose-rate sensitivity (ELDRS) and dose-rate dependence of vertical NPN transistors are investigated in this article. The results show that the vertical NPN transistors exhibit more degradation at low dose rate, and that this degradation is attributed to the increase on base current. The oxide trapped positive charge near the SiO₂-Si interface and interface traps at the interface can contribute to the increase on base current and the two-stage hydrogen mechanism associated with space charge effect can well explain the experimental results.     

Design and investigation of novel ultra-high-voltage junction field-effect transistor embedded with NPN

Ultra-high-voltage(UHV) junction field-effect transistors(JFETs) embedded separately with the lateral NPN(JFETLNPN), and the lateral and vertical NPN(JFET-LVNPN), are demonstrated experimentally for improving the electrostatic discharge(ESD) robustness. The ESD characteristics show that both JFET-LNPN and JFET-LVNPN can pass the 5.5-k V human body model(HBM) test. The JFETs embedded with different NPNs have 3.75 times stronger in ESD robustness than the conventional JFET. The failure analysis of the devices is performed with scanning electron microscopy, and the obtained delayer images illustrate that the JFETs embedded with NPN transistors have good voltage endurance capabilities. Finally,the internal physical mechanism of the JFETs embedded with different NPNs is investigated with emission microscopy and Sentaurus simulation, and the results confirm that the JFET-LVNPN has stronger ESD robustness than the JFET-LNPN,because the vertical NPN has a better electron collecting capacity. The JFET-LVNPN is helpful in providing a strong ESD protection and functions for a power device.     

Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector

The samples of In_xGa_(1-x)As/In_(0.52)Al_(0.48)As two-dimensional electron gas(2DEG)are grown by molecular beam epitaxy(MBE).In the sample preparation process,the In content and spacer layer thickness are changed and two kinds of methods,i.e.,contrast body doping andδ-doping are used.The samples are analyzed by the Hall measurements at 300 Kand 77 K.The In_xGa_(1-x)As/In_(0.52)Al_(0.48)As 2DEG channel structures with mobilities as high as 10289 cm~2/V·s(300 K)and42040 cm~2/V·s(77 K)are obtained,and the values of carrier concentration(Nc)are 3.465×10~(12)/cm~2and 2.502×10~(12)/cm~2,respectively.The THz response rates of In P-based high electron mobility transistor(HEMT)structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory.The results provide a reference for the research and preparation of In P-based HEMT THz detectors.     

Dual-wavelength 92.5 GHz self-mode-locked InP-based quantum dot laser

We report on the generation of dual-wavelength self-mode-locking pulses from an InP-based quantum dot laser. The demonstrated device operates simultaneously at both 1543.7 and 1571.7 nm and has a repetition rate of 92.5 GHz. The pulse width is below 960 fs, and the average power coupled to a cleaved single-mode fiber is nearly 9 mW at a current bias of 60 mA.     

Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves

A two-dimensional model of the silicon NPN monolithic composite transistor is established for the first time by utilizing the semiconductor device simulator, Sentaurus-TCAD. By analyzing the internal distributions of electric field,current density, and temperature of the device, a detailed investigation on the damage process and mechanism induced by high-power microwaves(HPM) is performed. The results indicate that the temperature elevation occurs in the negative half-period and the temperature drop process is in the positive half-period under the HPM injection from the output port.The damage point is located near the edge of the base–emitter junction of T2, while with the input injection it exists between the base and the emitter of T2. Comparing these two kinds of injection, the input injection is more likely to damage the device than the output injection. The dependences of the damage energy threshold and the damage power threshold causing the device failure on the pulse-width are obtained, and the formulas obtained have the same form as the experimental equations, which demonstrates that more power is required to destroy the device if the pulse-width is shorter. Furthermore,the simulation result in this paper has a good coincidence with the experimental result.     

一种新的磷化铟复合沟道高电子迁移率晶体管小信号物理模型

针对磷化铟(InP)复合沟道高电子迁移率晶体管(HEMT)的特点，对常规单沟道HEMT的小信号物理模型进行了修正，提出了一种新的用于复合沟道HEMT的小信号物理模型，用商用器件模拟软件ISE(integrated systems engineering)对其进行了仿真验证，对比了实测和仿真的I-V特性及转移特性曲线，重点研究了在InGaAs/InP双层沟道中考虑量子效应后的电场和电流密度随着不同栅电压的变化趋势，研究结果表明，由于在沟道中存在量子效应，在栅下靠源端低电场区域，电流主要分布在InGaAs沟道 关键词： 高电子迁移率晶体管 复合沟道 物理模型 磷化铟     

InP-based wavelength tunable vertical cavity surface emitting laser structures

We report on the design, fabrication and characteristics of both hybrid and monolithic micro-electro-mechanically wavelength tunable 1.55 μm InP-based Vertical-Cavity Surface-Emitting Laser (VCSEL) structures. Photo-pumped tunable VCSELs are successfully realized using both configurations, and a design for electrically pumped tunable VCSEL is presented. To cite this article: I. Sagnes et al., C. R. Physique 4 (2003).     

硅基单片式复合晶体管的结构参数对高功率微波损伤效应的影响

建立了三种不同结构的硅基单片式复合晶体管(由T1和T2两个晶体管构成)的二维电热模型,研究了高功率微波对不同结构的硅基单片式复合晶体管的损伤效应的影响。获得了不同器件结构下导致复合晶体管损伤的损伤功率阈值和损伤能量阈值分别与脉宽的关系。结果表明,当复合晶体管的总体尺寸不变而T2和T1晶体管的面积比值更大时需要更多的功率和能量来损伤器件。通过分析器件内部电场、电流密度和温度分布的变化,得到了复合晶体管的结构对其微波损伤效应的影响规律。对比发现,三种结构的复合晶体管的损伤点均位于T2管的发射极附近,随着T2和T1晶体管面积比的增大,电场、电流密度和温度在器件内部的分布将变得更加分散。此外,在发射极处增加外接电阻R_e,研究表明损伤时间随发射极电阻的增大而增加。因此可以得出结论,适当改变器件结构或增加外接元件可以增强器件的抗微波损伤能力。晶体管的仿真毁伤点与实验结果一致。     

InP基近红外波段量子线激光器的温度特性研究

制备了InP基近红外波段量子线激光器,在激光器温度特性分析中,观察到了反常的特征温度分布曲线.随着热沉温度增加,在120—180 K时,激光器阈值电流随温度升高出现下降趋势,即出现了负的特征温度.分析认为负特征温度的出现是由于随温度变化载流子再分布引起的.     

Tunnel injection transistor laser for optical interconnects

Transistor laser (TL) is already an established potential candidate for high speed optical interconnects and present day optical communication networks. This paper investigates theoretically the possibility of having lower base threshold current density and enhanced modulation bandwidth by inserting a tunnel injection structure in a TL having multiple quantum wells (MQW) in the base of the heterojunction bipolar transistor. Transfer of injected charge carriers from bulk to low dimensional nano-structure is assumed to occur via virtual energy states, which contributes to the terminal current. Small signal modulation response is obtained by solving the Statz–De Mars laser rate equations. The optimum threshold base current, confinement of carrier, light power outputs etc. are estimated for three QWs positioned at distances of 39, 59, and 79 nm from the emitter-base junction across the base. Incorporation of tunneling structure substantially lowers the base threshold current and increases the modulation bandwidth as compared to usual MQW transistor laser structure. The changes are more prominent with increasing tunneling probability.     

InP基高功率短波长量子级联激光器设计

阐述了InP基高功率短波长量子级联激光器(QCL)的设计原理和设计方案。从有源区设计模型出发,介绍了器件的理想和实际载流子传输路径,进而指出有源区设计的发展趋势和方法。根据器件的发展进程,综述了双声子共振设计,非共振抽取式设计,超强耦合设计,深阱设计,浅阱设计,短注入区设计等先进设计方案,这些设计方案使得QCL在低温下的电光转换效率在50%以上,最大室温连续输出功率超过3 W,而器件的特征温度T₀和T₁的最大值分别达到383 K和645 K。针对量子级联激光器的短波长高功率提供的先进设计方案扩大了QCL在民用与军用领域的应用前景,该设计方案亦可为其它波段量子级联激光器实现室温高功率的设计提供借鉴。     

Wavelength modulation spectroscopy with a widely tunable InP-based 2.3 microm vertical-cavity surface-emitting laser

We report on the successful application of recently developed 2.3 microm InP-based vertical-cavity surface-emitting lasers with a buried tunnel junction in a wavelength modulation spectroscopy measurement for carbon monoxide (CO) detection. The electrically pumped devices operate at room temperature under cw operation with stable single-mode emission and should allow for parts in 10(6) (ppm) level resolution measurement of CO with a standard optical setup.     

Large signal analysis of double quantum well transistor laser

In this paper, we present an analytical model for the large-signal analysis of the double quantum well (DQW) transistor laser. Our model is based on solving the continuity equation and the rate equations which incorporate the virtual states as a conversion mechanism. By using the presented model, effects of barrier width on DQW transistor laser static and dynamic performances are investigated. Also the static and dynamic responses of DQW transistor lasers are compared with single quantum well ones. Simulation results are in agreement with the numerical and experimental results reported by other researchers.     

Passivation of InP-based HBTs

The surface effects, the (NH₄)₂S and low-temperature-deposited SiN_x passivations of InP-based heterostructure bipolar transistors (HBTs) have been investigated. The surface recombination current of InP-based HBTs is related to the base structures. The (NH₄)₂S treatment for InGaAs and InP removes the natural oxide layer and results in sulfur-bonded surfaces. This can create surface-recombination-free InP-based HBTs. Degradation is found when the HBTs were exposed to air for 10 days. The low-temperature-deposited SiN_x passivation of InGaAs/InP HBTs causes a drastic decrease in the base current and a significant increase in the current gain. The improvement in the HBT performance is attributed to the low deposition temperature and the effect of N₂ plasma treatment in the initial deposition process. The SiN_x passivation is found to be stable. S/SiN_x passivation of InGaAs/InP HBTs results in a decrease in the base current and an increase in the current gain. The annealing process can cause the base current to decrease further and the current gain increase.     

Simulation of quantum-well slipping effect on optical bandwidth in transistor laser

An optical bandwidth analysis of a quantum-well （16 nm） transistor laser with 150-μm cavity length using a charge control model is reported in order to modify the quantum-well location through the base region. At constant bias current, the simulation shows significant enhancement in optical bandwidth due to moving the quantum well in the direction of collector-base junction. No remarkable resonance peak, limiting factor in laser diodes, is observed during this modification in transistor laser structure. The method can be utilized for transistor laser structure design.     

Gain-bandwidth trade-off in a transistor laser: quantum well dislocation effect

The Authors report an analytical model to investigate optoelectronic characteristics reliance of a Transistor Laser on Quantum Well Location. Using simulated base recombination lifetime, optical frequency response for different quantum-well locations extracted. Slipping the well towards the collector, improves the optical bandwidth where a maximum of ≈54 GHz is observed. No resonance peak, limiting factor in diode lasers, is occurred in this enhancement method. Analyzing current gain (β) as a function of the quantum well location, exhibits a decrease in β when the well moved in the direction of the collector so that a trade-off between optical and electrical properties of transistor laser is evident. The trade-off is utilized in conjunction with previously reported experimental researches to find an optimum place of quantum well for desired performance.     

Invited Paper: Design and modeling of a transistor vertical-cavity surface-emitting laser

A multiple quantum well (MQW) transistor vertical-cavity surface-emitting laser (T-VCSEL) is designed and numerically modeled. The important physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing the results with the experiment. The quantum capture/escape process is simulated using the quantum-trap model and shows a significant effect on the electrical output of the T-VCSEL. The parameters extracted from the numerical simulation are imported into the analytic modeling to predict the frequency response and simulate the large-signal modulation up to 40 Gbps.     

Degradation mechanisms of current gain in NPN transistors

An investigation of ionization and displacement damage in silicon NPN bipolar junction transistors (BJTs) is presented. The transistors were irradiated separately with 90-keV electrons, 3-MeV protons and 40-MeV Br ions. Key parameters were measured {\em in-situ} and the change in current gain of the NPN BJTS was obtained at a fixed collector current (I_{\rm c}=1~mA). To characterise the radiation damage of NPN BJTs, the ionizing dose D_{\i} and displacement dose D_{\d} as functions of chip depth in the NPN BJTs were calculated using the SRIM and Geant4 code for protons, electrons and Br ions, respectively. Based on the discussion of the radiation damage equation for current gain, it is clear that the current gain degradation of the NPN BJTs is sensitive to both ionization and displacement damage. The degradation mechanism of the current gain is related to the ratio of D_{\rm d}/(D_{\rm d}+D_{\rm i}) in the sensitive region given by charged particles. The irradiation particles leading to lower D_{\rm d}/(D_{\rm d}+D_{\rm i}) within the same chip depth at a given total dose would mainly produce ionization damage to the NPN BJTs. On the other hand, the charged particles causing larger D_{\rm d}/(D_{\rm d}+D_{\rm i}) at a given total dose would tend to generate displacement damage to the NPN BJTs. The Messenger--Spratt equation could be used to describe the experimental data for the latter case.