间接耦合硅光敏器件提出的前后

在研制硅光敏器件的十多年中,我们注意到两点:一是硅光敏器件的成品率不够高;二是无法用它们探测微弱的光,即它们的信噪比较小.这两点是由同一原因引起的,那就是它们的暗电流偏大. 结型光敏器件的原理是基于描述p-n结光电特性的位移近似公式[1]:式中IL 为输出的信号电流,I.c为p-n结的短路电流,Ic是p-n结的反向饱和电流,V为加在p-n结上的电压(光生电压或外加的电压),q为电量,k为玻耳兹曼常数,T为温度.光敏二极管(用于光伏效应器件时除外)、光敏三极管和达林顿光敏管都是使接受入射光的p-n结(以下简称为受光p-n结)处于反向偏压下工作,即V《…     

电化学染料增感对聚苯胺/硅异质结电池的影响

采用电化学氧化聚合染料增感方法,利用有机染料直接耐晒翠兰对太阳电池顶区材料聚苯胺进行了有机染料增感研究,制备出了Al栅/DS-PAn/n-Si/Al结构的染料增感聚苯胺/硅异质结太阳电池.研究表明,染料增感可使聚苯胺在光照射下光生载流子明显增强,较大幅度地改善聚苯胺的可见光谱响应;J-V特性表明,电池二极管的曲线因子约为6.3,p-n结的潜在势垒高度为0.89 eV;与未增感的PAn/n-Si异质结太阳电池相比,染料增感的DS-PAn/n-Si异质结太阳电池的短路电流和转换效率得到了较大提高,在37.2 W/m2的光照射下,经染料增感的电池短路电流较增感前提高了约6倍,填充因子可达57%,转换效率达1.42%.     

基于侧边抛磨光纤传感器的混合液晶薄膜光折变特性研究

利用侧边抛磨光纤(SPF)传感器抛磨区对外界折射率敏感的特性,研究了混合有偶氮苯(AZO)和手征材料(ZLI811)的液晶混合物薄膜在紫外光照射下产生的光折变效应.将液晶、AZO 和 ZLI811 等 3 种材料的混合物涂覆在经过标定的 SPF 传感器的抛磨区上,制备成混合物薄膜.用 UV 光照射光敏薄膜导致 SPF 中传输光功率改变.实验表明:混合物薄膜在 UV 光照射下有光敏特性,会产生折射率变化,其折射率从1.474 变到1.470.这表明此光敏薄膜材料是负光折变材料.这种光敏薄膜材料可应用于制作新型全光纤光控器件和传感器.     

半透明Cu2O/ZnO异质结的制备及其光电性能研究

为研究具有更好材料稳定性的半透明薄膜太阳能电池,本文采用直流磁控溅射技术沉积氧化亚铜(Cu_2O)薄膜和氧化锌(ZnO)薄膜,制备了Cu_2O/ZnO异质结.使用扫描电镜、X射线衍射仪、拉曼光谱仪、薄膜测定系统和太阳能模拟器,研究在不同氩/氧气体流量比的条件下制备的Cu_2O层对异质结的材料特性、光学特性及光电特性的影响.研究结果表明:在一定氩/氧气体流量比范围内制备的Cu_2O/ZnO异质结,在AM1.5的标准模拟太阳光的照射下具有一定的光电转换能力,可作为半透明太阳能电池的换能单元.     

MoS2/MoTe2垂直异质结的电荷传输及其调制

二维材料异质结器件具有纳米级厚度及范德瓦耳斯接触表面,因而表现出独特的光电特性.本文构建了栅压可调的MoS₂/MoTe₂垂直异质结器件,利用开尔文探针力显微镜(KPFM)技术结合电输运测量,揭示了MoS₂/MoTe₂异质结分别在黑暗和532 nm激光照射条件下的电荷输运行为,发现随着栅压的变化异质结表现出从n-n⁺结到p-n结的反双极性特征.系统地解释了MoS₂/MoTe₂异质结的电荷输运机制,包括n-n⁺结和p-n结在正偏和反偏下条件下的电荷输运过程、随栅压变化而发生的转变的结区行为、接触势垒对电荷输运的影响、n-n⁺结和p-n结具有不同整流特征的原因、偏压对带间隧穿的重要作用及光生载流子对电学输运行为的影响等.本文所使用的方法可推广到其他二维异质结体系,为提高二维半导体器件性能及其应用提供了重要的参考和借鉴.     

HgCdTe红外探测器离子注入剂量优化研究

在中波响应波段的p型Hg_0.709Cd_0.291Te(MCT)分子束外延生长薄膜上，利用材料芯片技术获得叠加注入不同硼离子剂量的系列大光敏元面积(500μm×500μm)的n-op-p结.通过测量液氮温度下不同离子注入剂量单元的电流-电压特性和对零偏微分电阻R₀分析，观测到p-n结的性能与硼离子注入剂量明显的依赖关系.在另一片薄膜材料(镉组分值为0.2743)上通过该方法获得R₀A优于现有常规数值的探测器单元. 关键词： p-n结 离子注入 碲镉汞薄膜     

质子注入MBE碲镉汞n-on-p结性能研究

基于中波响应波段的分子束外延碲镉汞薄膜材料成功制备出不同质子注入剂量的大光敏元(5 00μm×500μm)的n-on-p结构的p-n结，并对相应的p-n结的电流-电压（I-V）特性进行 了研究.质子注入剂量为2×10¹⁵cm^-2时R₀A达312.5Ω ·cm²，低温热处理后达490Ω·cm². 关键词： I-V特性 碲镉汞薄膜 质子注入 p-n结     

氧化锌/金刚石薄膜异质结紫外光探测器

采用射频磁控溅射法在p型自支撑金刚石衬底上制备了高度c轴取向的n型氧化锌薄膜.研究了不同的溅射功率对氧化锌薄膜质量的影响.通过半导体特性分析系统测试了氧化锌/金刚石异质结的电流-电压特性,结果显示该异质结二极管具有良好的整流特性,开启电压约为1.6 V.在此基础上制备了结型紫外光探测器,并对其光电性能进行了研究.结果表...     

Cu2O-ZnO异质结太阳能电池的制备及光电性能研究（英文）

电化学沉积是一种绿色高效的材料制备方法。本实验使用电化学沉积法分别制备了单晶的氧化锌(ZnO)纳米棒阵列和p型的氧化亚铜(Cu2O)薄膜,并对样品进行了扫描电镜、X光衍射、外量子效率和光电性能测试等一系列的表征和测试。试验结果表明,通过改变反应溶液中的ZnCl2浓度可以来调控ZnO纳米棒的直径。光电性能测量显示在Cu2O/ZnO间形成了p-n异质结。量子效率的测试证明该异质结可有效地促进载流子的分离和传送,从而提高太阳能电池的转化效率。     

基于Pt/GaN/AlGaN异质结高响应度双波段紫外探测器

提出一种在AlGaN基PIN器件的p-GaN表面上沉积Pt,形成肖特基势垒(SB)-PIN异质结器件,器件的能带和载流子的输运发生了变化,这种新型光电探测器实现了双波段紫外探测,可分别工作在光伏和光电导模式下。器件在275 nm波长的紫外光照射的负偏置电压下,工作模式为光伏探测,当入射光功率密度为100μW/cm²,偏置电压为-10 V时,器件得到最大响应度(0.12 A/W);当偏置电压为-0.5 V时,器件得到最大探测率(1.0×10¹³ cm·Hz^1/2·W^-1)。器件在正偏置电压工作模式下可作为高响应、高增益的光电导探测器,当偏置电压为+10 V时,用275 nm和365 nm波长的紫外光照射(光功率密度为100μW/cm²),器件的响应度分别为10 A/W和14 A/W,外量子效率分别为4500%和4890%。所设计的双波段多功能器件将极大地扩展基于AlGaN的紫外探测器的用途。     

A conducting polymer-silicon heterojunction as a new ultraviolet photodetector

We discuss on the development and characterization of a p-n heterojunction of polyaniline-silicon as a photo detector for the ultraviolet (UV) region. The hybrid heterojunction consists of micro and nano-films (<300 nm thick) of polyaniline deposited on the top of a silicon wafer through the spin-coating technique, where in the backside of silicon and on top of polyaniline, aluminum and gold were respectively deposited by evaporation to make the electric contacts. The electrical characteristics of the devices present excellent reproducibility and high rectification ratio. In addition, the spectroscopic and the photon response analysis of the devices strongly indicates that it can be used as a broad band photon detector, with good sensitivity especially in the UV region ≈2.0-3.5 eV, where it presents enhanced sensitivity (≈200%) when compared to commercial all-silicon diodes such as the OPT 301 UV detector.     

ZnO and ZnS Nanostructures: Ultraviolet-Light Emitters,Lasers, and Sensors

ZnO and ZnS, well-known direct bandgap II–VI semiconductors, are promising materials for photonic, optical, and electronic devices. Nanostructured materials have lent a leading edge to the next generation technology due to their distinguished performance and efficiency for device fabrication. As two of the most suitable materials with size- and dimensionality-dependent functional properties, wide bandgap semiconducting ZnO and ZnS nanostructures have attracted particular attention in recent years. For example, both materials have been assembled into nanometer-scale visible-light-blind ultraviolet (UV) light sensors with high sensitivity and selectivity, in addition to other applications such as field emitters and lasers. Their high-performance characteristics are particularly due to the high surface-to-volume ratios (SVR) and rationally designed surfaces. This article provides a comprehensive review of the state-of-the-art research activities in ZnO and ZnS nanostructures, including their syntheses and potential applications, with an emphasis on one-dimensional (1D) ZnO and ZnS nanostructure-based UV light emissions, lasers, and sensors. We begin with a survey of nanostructures, fundamental properties of ZnO and ZnS, and UV radiation–based applications. This is followed by detailed discussions on the recent progress of their synthesis, UV light emissions, lasers, and sensors. Additionally, developments of ZnS/ZnO composite nanostructures, including core/shell and heterostructures, are discussed and their novel optical properties are reviewed. Finally, we conclude this review with the perspectives and outlook on the future developments in this area. This review explores the possible influences of research breakthroughs of ZnO and ZnS nanostructures on the current and future applications for UV light–based lasers and sensors.     

The effect of UV irradiation on nanocrysatlline zinc oxide thin films related to gas sensing characteristics

The effect of ultraviolet (UV) light irradiation on the nanocrystalline ZnO thin films was investigated. The degree of crystallinity, electrical conductivity, optical properties and surface properties of ZnO thin films were measured as a function of UV irradiation time. It was found that the degree of crystallinity and electrical properties of ZnO films were affected by UV irradiation, however, no noticeable change in the surface morphology was observed. The gas sensing properties of as-deposited and UV irradiated films were also measured. It was observed that the gas sensing properties were affected by the UV irradiation. The irradiation time less than 5 min has improved the sensor while the irradiation time more than 5 min degraded the sensor characteristics for a UV power density of 2.45 W cm⁻².     

ZnS型发光材料光老化的研究

用X射线衍射谱证实了ZnS光致发光材料经紫外线照射后,体色逐渐变灰至黑是由于ZnS离解析出Zn所引起并发现尚有其它组分存在.还研究了不同波长的紫外线照射和材料粒经大小对ZnS发光材料光老化的影响得出一些新的实验结果.     

Degradation and protection of polyaniline from exposure to ultraviolet radiation

The effect of UV radiation on both pure and additive-containing polyaniline thin films is described. Experimental investigations included optical transmittance spectroscopy and electrical conductivity measurements. Exposure to UV radiation in the range of 380 to 400 nm was seen to increase film transmittance by 4% through photobleaching. Different gas ambients were employed for this experiment and progressively more photobleaching was observed for nitrogen, air and oxygen atmospheres. This effect arises due to the destruction of quinoid and benzenoid chromophores on the polymer backbone. Concomitantly, a decrease in film resistivity was also observed and this can be attributed to increased oxidative doping of the film material. The addition of controlled amounts of Tinuvin 213—an ultraviolet absorber (UVA) material—was seen to reduce the UV-induced degradation of polyaniline thin films by absorption of UV photons through regenerative intramolecular photolysis.     

Electrical transport and optical properties of vanadyl phosphate—polyaniline nanocomposites

The nanocomposites of conducting polyaniline and layered vanadyl phosphate, VOPO₄·2H₂O are synthesized by redox intercalation method. Water content decreases with insertion of polyaniline molecules. In scanning electron micrographs plate like structures are observed for both VOPO₄·2H₂O and intercalated nanocomposites. Protonation of polyaniline and interaction with vanadyl phosphate are observed in infrared and UV absorption spectroscopy. Intercalation improves conductivity of pristine vanadyl phosphate. Thermally activated electrical dc conductivity at low temperature shows two distinct slopes around 210 K for both the nanocomposites. The optical band gap of vanadyl phosphate decreases from 4.0 to 3.7 eV due to insertion of polyaniline.     

Photoresponsive conductance switching of multi-walled carbon nanotubes bearing covalently linked spironaphthoxazine

Multi-walled carbon nanotubes functionalized with a photochromic spironaphthoxazines (MWCNTs-SPO) were synthesized by the reaction between the hydroxyl group of SPO and the carbonyl chloride groups on the surface of MWCNTs. The functional spirooxazine photochromic groups on the surface of MWCNTs were identified by the X-ray photoelectron spectroscopy. As a novel derivative of MWCNTs, photoresponsive conductance switching of the MWCNTs-SPO was demonstrated under a 365 nm UV light irradiation. A simple photoinduced resistance measurement following the cyclic irradiation of UV light shows a very reversible response. The effect of the electron injection in the SPO is rationalized in terms of the HOMO–LUMO energy levels of both spiro and merocyanine forms.     

Ultraviolet irradiation of ZnS single crystals kept in the atmosphere of different gases

This short communication deals with some preliminary results concerning the changes of the transmission spectra of ZnS single crystals irradiated in various gases by UV light.     

树形分子包覆的ZnS量子点对潜指纹的荧光标记成像研究

在Zn2+离子与聚酰胺-胺(PAMAM)树形分子配位的基础上,制备了稳定的PAMAM树形分子包覆的ZnS量子点(quantum dots,QDs),并用紫外-可见吸收光谱(UV-Vis)和荧光发射光谱进行了表征。结果表明,Zn2+离子能与PAMAM树形分子发生配位络合作用,且饱和配位时间为6h;在波长365nm紫外光的激发下,PAMAM树形分子包覆的ZnS量子点发射出明亮的蓝色荧光,荧光发射峰约位于450nm。最后,将得到的PAMAM树形分子包覆的ZnS量子点纳米复合材料应用于锡纸上潜指纹的荧光标记成像研究,发现指纹可以被清晰识别,呈现明亮的蓝色荧光指纹。     

核壳结构CdS/ZnS纳米微粒的制备与光学特性

用微乳液法制备CdS纳米微粒 ,以ZnS对其进行表面修饰 ,得到具有核壳结构的CdS/ZnS纳米微粒 .采用X射线衍射 (XRD)、透射电镜 (TEM )表征其结构、粒度和形貌 ,紫外 可见吸收光谱 (UV)、光致发光光谱(PL)表征其光学特性 .制得的CdS近似呈球形 ,直径为 3.3nm ;以XRD和UV证实了CdS/ZnS核壳结构的实现 .研究了不同ZnS壳层厚度对CdS纳米微粒光学性能的影响 ,UV谱表明随着壳层厚度的增加纳米微粒的吸收带边有轻微的红移 ,同时短波吸收增强 ;PL谱表明壳层ZnS的包覆可减少CdS纳米微粒的表面缺陷 ,带边直接复合发光的几率增大 ,具有合适的壳层厚度时发光效率大大提高 .