Sacrificial adhesion promotion layers for copper metallization of device structures

The adhesion of copper films to adjacent device layers including TiN, Ta, and TaN diffusion barriers is a crucial reliability issue for integrated circuits. We report that ultrathin layers of poly(acrylic acid) (PAA) prepared on barrier surfaces or on the native oxide of Si wafers dramatically increase the interfacial adhesion of Cu films deposited by the H2 assisted reduction of bis(2,2,7-trimethyloctane-3,5-dionato)copper in supercritical carbon dioxide. Similar improvements were achieved on Si wafers using a simple vapor phase exposure of the substrate to acrylic acid prior to metallization. The deposited films and the substrate/Cu interfaces were analyzed by X-ray photoelectron spectroscopy (XPS), electron microscopy, atomic force microscopy, and variable-angle spectroscopic ellipsometry. No trace of the adhesion layer was detected at the interface, indicating it was sacrificial at the deposition conditions used. Moreover, the presence and subsequent decomposition of the PAA layer during deposition substantially reduced or eliminated metal oxides at the substrate interface. For depositions on PAA-treated Si wafers, copper was present primarily as Cu0 at the interface and Si was present only as Si0. On PAA-treated Ta substrates, XPS analysis indicated Ta was present primarily as Ta0 at the metallized interface whereas Ta2O5 dominated the interface of samples prepared without the adhesion layers. The technique can be extended to patterned substrates using adsorption of acrylic acid or thermal/UV polymerization of acrylic acid.     

Electron-beam evaporated silicon as a top contact for molecular electronic device fabrication

This paper discusses the electronic properties of molecular devices made using covalently bonded molecular layers on carbon surfaces with evaporated silicon top contacts. The Cu "top contact" of previously reported carbon/molecule/Cu devices was replaced with e-beam deposited Si in order to avoid Cu oxidation or electromigration, and provide further insight into electron transport mechanisms. The fabrication and characterization of the devices is detailed, including a spectroscopic assessment of the molecular layer integrity after top contact deposition. The electronic, optical, and structural properties of the evaporated Si films are assessed in order to determine the optical gap, work function, and film structure, and show that the electron beam evaporated Si films are amorphous and have suitable conductivity for molecular junction fabrication. The electronic characteristics of Si top contact molecular junctions made using different molecular layer structures and thicknesses are used to evaluate electron transport in these devices. Finally, carbon/molecule/silicon devices are compared to analogous carbon/molecule/metal junctions and the possible factors that control the conductance of molecular devices with differing contact materials are discussed.     

Monte Carlo simulation study of reflection electron energy loss spectroscopy of an Fe/Si overlayer sample

Reflection electron energy loss spectroscopy (REELS) has been used to study the optical and electronic properties of semi-infinite solid samples, aided by a theoretical model of the interaction between electrons and a solid. However, REELS has not been used to its full capacity in studying nanomaterial samples because of the difficulty in modeling the electron interaction with a layered nanostructure. In this study, we present a numerical calculation result on the spatially varying inelastic mean free path for a sample comprising an Fe layer of varying thickness on an Si substrate. Furthermore, a Monte Carlo model for electron interaction with this Fe-Si layered structure sample is built based on this inelastic scattering cross section and used to reproduce the REELS spectra of Fe-Si layered structures. The simulated spectra of the sample with varying Fe layer thickness on top of a Si substrate were compared with the experimental spectra. This comparison clearly identifies that the Fe layer remaining on top of the experimental Si substrate after Ar⁺ beam sputtering is in the form of a homogeneous mixed layer, where the Fe/Si interface excitation is absent in the experimental spectra owing to pulverization of the Fe/Si interface during the Ar⁺ sputtering process.     

AES and SIMS investigation of diffusion barriers for copper metallization in power-SAW devices

Barrier layers for Cu-metallization in surface acoustic wave (SAW) devices were investigated by AES and SIMS depth profiles. Two layered systems on LiNbO(3) substrate have been analyzed after annealing in air up to 400 degrees C. The investigated systems were (A) Ta(20 nm)/Cu(150 nm)/Ti(30 nm), deposited by electron beam evaporation, and (B) Ta(30)Si(18)N(52)(50 nm)/Cu(150 nm)/Ta(30)Si(18)N(52)(50 nm) deposited by magnetron sputtering. In system A the Ta layer shows oxidation in air for T>or=300 degrees C. Ti from the buffer layer diffuses into the Cu at about 100 degrees C, and segregates at the Ta/Cu interface for T>or=200 degrees C. Oxidation of the Ti layer starts at 300 degrees C. But no remarkable amounts of oxygen could be found in the Cu film. The depth profiles show that the TaSiN layer in system B operates as a more effective barrier for the Cu-SAW technology up to more than 300 degrees C.     

Chemical interactions in the layered system BC x N y /Ni(Cu)/Si, produced by CVD at high temperature

Layered samples Si(100)/C/Ni/BC(x)N(y) and Si(100)/C/Cu/BC(x)N(y) were produced by physical vapor deposition of a metal (Ni, Cu, resp.) and low-pressure chemical vapor deposition of the boron carbonitride on a Si(100) substrate. Between the Si and the Ni (Cu) and on the surface of the Ni (Cu) layer, thin carbon layers were deposited, as a diffusion barrier or as a protection against oxidation, respectively. Afterwards, the surface carbon layer was removed. As precursor, trimethylamine borane and, as an auxiliary gas, H(2) and NH(3) were used, respectively. The chemical compositions of the layers and of the interfaces in between were characterized by total-reflection X-ray fluorescence spectrometry combined with near-edge X-ray absorption fine-structure spectroscopy, X-ray photoelectron spectroscopy, and secondary ion mass spectrometry. The application of H(2) yielded the BC(x)N(y) compound whereas the use of NH(3) led to a mixture of h-BN and graphitic carbon. At the BC(x)N(y)/metal interface, metal borides could be identified. At the relatively high synthesis temperature of 700 °C, broad regions of Cu or Ni and Si were observed between the metal layer and the substrate Si.     

Synthesis and characterization of disordered layered silica obtained by selective leaching of octahedral sheets from chrysotile and phlogopite structures

Natural chrysotile fibers and pegmatitic phlogopite were acid-leached under controlled conditions. The resulting products were characterized by powder X-ray diffraction, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, (29)Si nuclear magnetic resonance, transmission electron microscopy, and selected area electron diffraction. The leached products derived of the two clays are similar, consisting of layered hydrated disordered silica with a "distorted" structure resembling the silicate layer existing in the original minerals. A simple model of the "disordered" silica structure is presented.     

Effects of post-deposition annealing on chemical composition of SiNx film in SiO2/SiNx/SiO2/Si stacked structure

To systematically evaluate the quality of SiN_x films in multi-stacked structures, we investigated the effects of post-deposition annealing (PDA) on the film properties of SiN_x within the SiO₂/SiN_x/SiO₂/Si stacked structure by performing X-ray photoelectron spectroscopy (XPS), X-ray reflectivity (XRR), Fourier transform infrared (FT-IR) spectroscopy, and scanning transmission electron microscope–electron energy loss spectroscopy (STEM-EELS) analyses. The XPS results showed that PDA induces the oxidation of the SiN_x layer. In particular, new finding is that Si-rich SiN_x in the SiN_x layer is preferentially oxidized by PDA even in multi-stacked structure. The XRR results showed that the SiN_x layer becomes thinner, whereas the interface layer between the SiN_x layer and Si becomes thicker. It is concluded by STEM-EELS and XPS that this interface layer is SiON layer. The density of N–H and Si–H bonding within the stacked structure strongly depends on the PDA temperature. Our study helps elucidate the properties of SiN_x films in stacked structures from various perspectives.     

X-ray absorption microscopy of bacterial surface protein layers: X-ray damage

The electronic structure of individual sheets of the bacterial surface protein layer (S layer) of Bacillus sphaericus NCTC 9602 was studied using a photoemission electron microscope (PEEM) operating in near-edge X-ray absorption fine structure spectroscopy mode. The laterally resolved measurements performed at the C 1s, N 1s, and O 1s thresholds on fresh samples revealed characteristic differences compared to the laterally integrated data, where substrate contributions were taken along with the protein signals. During the PEEM experiments an irradiation-induced increase of the C-C bond density at the cost of the densities of the C-O and C-N bonds related to a rearrangement of the contributing atoms of the S layer deposited onto a Si substrate was observed. The critical irradiation doses for the C-O and C-N bond breaking and formation of the new C-C bonds were derived.     

A transmission electron microscopy study of the effect of interfaces on bubble formation in He-implanted Cu-Nb multilayers

Magnetron sputtered thin films of Cu, Nb, and Cu-Nb multilayers with 2.5 and 5 nm nominal layer thickness were deposited on Si and implanted with 4He+ and 3He+ ions. Secondary ion mass spectroscopy and nuclear reaction analysis, respectively, were used to measure the 4He+ and 3He+ concentration profile with depth inside the films. Cross-sectional transmission electron microscopy was used to characterize the helium bubbles. Analysis of the contrast from helium bubbles in defocused transmission electron microscope images showed a minimum bubble diameter of 1.25 nm. While pure Cu and Nb films showed bubble contrast over the entire range of helium implantation, the multilayers exhibited bubbles only above a critical He concentration that increased almost linearly with decreasing layer thickness. The work shows that large amounts of helium can be trapped at incoherent interfaces in the form of stable, nanometer-size bubbles.     

Studies of Cu‐doped ZnS thin films prepared by sputtering technique

Radio frequency magnetron sputtering technique has been used to deposit Cu‐doped ZnS thin films on glass and n‐type Si(100) substrates at room temperature. Crystalline structure, surface morphology, and elemental oxidation states have been studied by X‐ray diffraction, field emission scanning electron microscopy, atomic force microscopy, and X‐ray photoelectron spectroscopy. Ultraviolet–visible spectroscopy has been employed to measure the transmittance, reflectance, and absorbance properties of coated films. The deposited thin films crystallize in zinc blende or sphalerite phases as proved by X‐ray diffraction analysis. The intensity of diffraction peaks decreases with increasing the dopant concentrations. The predominant diffraction peak related to (111) plane of ZnS is observed at 28.52° along with other peaks. The peak positions are shifted to higher angles with an increase of Cu concentrations. X‐ray photoelectron spectroscopy studies show that Cu is present in +1 oxidation state. Transmittance, reflectance, and absorbance properties of the deposited films have a slight variation with dopant concentrations. Copyright © 2016 John Wiley & Sons, Ltd.     

A momentum space view of the surface chemical bond

Well-ordered and oriented monolayers of conjugated organic molecules can offer new perspectives on surface bonding. We will demonstrate the importance of the momentum distribution, or symmetry, of the adsorbate molecules' π orbitals in relation to the states available for hybridization at the metal surface. Here, the electronic band structure of the first monolayer of sexiphenyl on Cu(110) has been examined in detail with angle-resolved ultraviolet photoemission spectroscopy over a large momentum range and will be compared to measurements of a multilayer thin film and to density functional calculations. In the monolayer, the one-dimensional intramolecular band structure can still be recognized, allowing an accurate determination of orbital modification upon bonding and the relative energetic positions of the electronic levels. It is seen that the character of the molecular π orbitals is largely maintained despite strong mixing between Cu and molecular states and that the lowest unoccupied molecular orbital (LUMO) is filled by hybridization with Cu s,p states rather than through a charge transfer process. It is also shown that the momentum distribution of the substrate states involved and the periodicity of the molecular overlayer play a large role in the final E(k) distribution of the hybrid states. The distinct momentum distribution of the LUMO, interacting with the Cu substrate s,p valence bands around the gap in the surface projection of the bulk band structure, make this system a particularly illustrative example of momentum resolved hybridization. This system demonstrates that, for hybridization to occur, not only do states require overlap in energy and space, but also in momentum.     

Thickness and temperature‐dependent study of Co/Si interface

Thin films of cobalt (10, 40, and 100 nm) are deposited on Si substrate by electron beam physical vapor deposition technique. After deposition, 4 pieces from each of the wafers of silicon substrate were cut and annealed at a temperature of 200°C, 300°C, and 400°C for 2 hours each, separately. X‐ray diffraction, atomic force microscopy, and transmission electron microscopy (TEM) are used to study the structural and morphological characteristics of the deposited films. To obtain TEM images, Co films are deposited on Cu grids; so far, no such types of TEM images of Co films are reported. Structural studies confirm nanocrystalline nature with hexagonal close packed structure of the deposited Co film at lower thickness, while at higher thickness, film structure transforms to amorphous with lower surface roughness value. The particle sizes in all the cases are in the range of 3 to 5 nm. Micro‐Raman spectroscopy is also used to study the phase formation and chemical composition as a function of thickness and temperature. The results confirm that the grown films are of good quality and free from any impurity. Studies show the silicide formation at the interface during deposition. The appearance of new band at 1550 cm⁻¹ as a result of annealing indicates the structural transformation from CoSi to CoSi₂, which further enhances at higher annealing temperatures.     

Ion scattering and X-ray photoelectron spectroscopy of copper overlayers vacuum deposited onto mercaptohexadecanoic acid self-assembled monolayers

Metal overlayers deposited in vacuum onto self-assembled monolayer (SAM) systems serve as models for more complex metalized polymers. Metals (M) deposited onto SAMs with different organic functional end groups exhibit a wide range of behavior, ranging from strong chemical interactions with the end group to complete penetration of the metal through the SAM. In this work, we have characterized the interactions of Cu with the ---COOH of mercaptohexadecanoic acid (MHA, HOOC(CH₂)₁₅SH) SAMs self assembled on gold films by using X-ray photoelectron spectroscopy (XPS) to examine the chemical interactions, and a combination of XPS and ion scattering spectroscopy (ISS) to deduce the growth mode and penetration rate of the deposited Cu. We found that submonolayer amounts of Cu react with HOOC, whereas the rest of the Cu remains metallic and penetrates beneath the SAM surface to the SAM  Au interface. Considerable amounts of Cu (5 nm or more) will penetrate beneath the SAM layer, which is ca. 2.5 nm thick, despite the submonolayer presence of Cu at the SAM surface. The penetration rate depends strongly on the Cu deposition rate. Depositing copper onto MHA at 220 K or less, or using faster Cu deposition rates, results in slower or even completely suppressed penetration of the Cu through the SAM layer, whereas exposure to X-rays greatly enhances the penetration rate of large amounts of Cu through the SAM layer. The reacted copper is, based on the XPS 2p and LMM peaks, in the +2 oxidation state, but cannot be identified with a simple, stoichiometric oxide such as Cu₂O, CuO, or Cu (OH)₂.     

My Research History on the Chemical Standpoint—From Molecular Structure to Surface Science

The structure of molecules using gas electron diffraction (GED) was my graduate study. However, I was making a new apparatus for precise measurements by GED and formulated a scheme for the least‐squares analysis for a smooth continuous curve of scattering intensity. My research was completely shifted to the solid surface after moving to Gakushuin University, where I briefly studied the liquid structure of CCl₄ molecules, and I then moved to the Institute for Solid State Physics, the University of Tokyo. My studies of surface science were focused on the electronic properties and related phenomena, and various experimental methods were developed. The plasmon dispersions elucidated the initial oxidation of aluminum and one‐dimensional metal on Si(001)2 × 1–K. Irreversible phase transition was discovered on MgO(001) using the LEED Kikuchi pattern. The electronic structure of the dislocation was observed on MgO(001) by the electron time‐of‐flight method. The phase transition on Si(001) and the rotational epitaxy in a K monoatomic layer on Cu(001) were found. Next, I changed to studies of the dynamical phenomena on the surface, where very low energy reactive ion scattering on metal surfaces and laser‐induced desorption caused by electronic transition of NO and CO molecules from metal surfaces were observed, and the hydrogen atom location at the surface and interface was measured with a high depth resolution using a resonance nuclear reaction of ¹H + ¹⁵N²⁺ at 6.385 MeV. Finally, I moved to the University of Electro‐Communications and studied thin single‐crystal oxide layers on transition metals, in which the band‐gap narrowing was found, and then a Pt monoatomic layer was prepared on the α‐Al₂O₃ film.     

A study of the adhesion of copper to polyimide foils using surface analytical techniques

Summary The adhesion of chemically and electrochemically deposited copper films on commercial polyimide foils has been studied using scanning electron microscopy, photoelectron spectroscopy, EDX and IR reflection-absorption spectroscopy. Experiments have been carried out on the bare surface and the deposited layers as well as on surfaces prepared by peeling off the deposits. The results show that, at least for the case considered here, poor adhesion is caused by cohesion failure in the foil itself, and that a thin surface layer of the polyimide foil is important for the interface bond. IR spectroscopy was used to study the molecular nature of this surface layer.

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Untersuchung der Adhäsion von Kupfer an Polyimidfolien mit Hilfe von oberflächenanalytischen Verfahren

     

Structure and dynamics of excited electronic states at the adsorbate/metal interface: C6F6/Cu(111)

Excited state electron transfer at the adsorbate/metal interface represents a key step in molecular electronic devices. The dynamics of such processes are governed by ultrafast energy relaxation which can be probed directly by time-resolved two-photon photoemission (2PPE). Using 2PPE spectroscopy we investigate the energetics and lifetimes of the unoccupied electronic states of C6F6 adsorbed on Cu(111) as a model system for electron transfer at organic/metal interfaces. With increasing C6F6 layer thickness we find a pronounced decrease in the energetic position of the lowest unoccupied state, which is accompanied by a strong increase in its lifetime as well as a decrease in the effective electron mass. The frequently employed dielectric continuum model which describes delocalized (quantum well) states within adsorbate layers does not give a consistent explanation of these findings. By adsorption of Xe overlayers onto C6F6/Cu(111) we can show that, even for one monolayer of C6F6, the excited state must be localized predominantly inside the C6F6 layer and thus originates from a molecular state (presumably an antibonding sigma* orbital). With increasing coverage this state becomes more delocalized within the adsorbate layer, which reduces the coupling to the metal substrate and thus enhances the excited state lifetime.     

Delocalized electron resonance at the alkanethiolate self-assembled monolayer/Au(111) interface

We probe the electronic structure of alkanethiolate self-assembled monolayers (SAMs) on Au(111) using two-photon photoemission spectroscopy. We observe a dispersive unoccupied resonance close to the vacuum level with a lifetime shorter than 30 fs. The short lifetime and the insensitivity of the energy level and dispersion to molecular length (and thus layer thickness) suggest that the probability density of the electron wave function is concentrated inside the molecular layer close to the SAM/Au interface. Such an interfacial resonance results from the image like potential at the SAM/Au interface.     

Characterization of the interface interaction of cobalt on top of copper- and iron-phthalocyanine

The electronic structure of the interface between ferromagnetic cobalt and the organic semiconductors copper- (CuPc) and iron-phthalocyanine (FePc) was investigated by means of photoemission spectroscopy (UPS, IPES, and XPS). These metal-phthalocyanine (MePc) molecules have an open shell structure and are known to show promising properties for their use in organic spintronics. In spintronic devices, the interface between ferromagnetic electrode and the organic layer determines the spin injection properties and is hence important for the quality of, e.g., a possible spin-valve device. For this purpose, cobalt was deposited onto the MePcs, such as in devices with ferromagnetic top contacts. The reported investigations reveal a diffusion of cobalt into the organic layers and chemical reactions at the interface.     

A photoemission study of the Cu/MnO interface

The electronic structure of the Cu/MnO interface has been studied by UV photoelectron spectroscopy for copper coverages ranging from 1 to 12 Å. The MnO substrate was prepared by exposing a freshly evaporated manganese layer to oxygen at room temperature. By monitoring the evolution of the Cu 3d level we present evidence that intermixing takes place at low copper coverages (1–2 Å); this causes a shift of the Cu 3d peak towards higher binding energies with respect to the bulk metal. A bulklike copper phase, which does not affect the copper in the intermixed region, forms with increasing copper coverage.     

Studies on the mechanical and friction properties of polyamide 6-Cu/Si nanocomposites

Polyamide 6 nanocomposites reinforced with Cu/Si nanoparticles (PA6-Cu/Si) were prepared by the in-situ ring-opening polymerization of ?-caprolactam. The in-situ polymerization was critical for preventing the aggregation of Cu/Si nanoparticles. The Cu/Si nanoparticles in the nanocomposite retained their nano characteristics and were not oxidized by the amino groups in PA6. The structure of the as-fabricated PA6-Cu/Si nanocomposite was evaluated by transmission electron microscopy (TEM), X-ray diffraction (XRD), and ultraviolet-visible absorption spectroscopy (UV-vis). The friction and wear resistance, mechanical strength, and antistatic performance of PA6-Cu/Si were also evaluated. The PA6 polymer chains prevent the Cu/Si nanoparticles from aggregation by coating the surface of the Cu/Si nanoparticles via physical adsorption or an electrostatic effect. The mass fraction of the Cu/Si nanoparticles also had a significant effect on the crystalline form of PA6. The γ crystalline form of PA6 was predominant at a high mass fraction of Cu/Si to PA6. Moreover, PA6-Cu/Si with improved mechanical properties and wear resistance was generated by tuning the amount of nano-Cu/Si filler added during the polymerization. PA6-Cu/Si with a nano-Cu/Si content of 0.5% possesses the highest tensile strength and wear resistance and shows promise in applications as a functional polymer-matrix composite.