Skyrme模型中的质子-反质子束缚态

BES(北京谱仪)发现了奇特粒子态X(1835). 述评近年来把X(1835)解释为Skyrme模型中的NN-重子偶素的工作. 有2个证据支持这种解释: 1) 存在NN-经典Skyrmion解,其结合能为～10MeV; 2) 这种Skyrmion-重子偶素的衰变是由X(1835)中的p-p经由量子隧穿而湮没所引起的, 因此最可几的衰变道是X(1835)→η4π 或 X→η' 2π. 这些导致了对BES实验数据的合理解释, 特别是关于X(1835)最可几的衰变模式的预言. 该预言对实验有价值.     

Molecular Structures of H2X and D2X(X=0, S,Se, Te)

There are two possible configurations for H₂O, linear(D_∞h) or bent(C_2v). For a C_2v′, the three bands ν_1′ ν₂ and ν₃ should appear in both Raman and infrared. For a D_∞h. however, the ν₁, band should appear in only Raman and the ν₂ and ν₃ bands, in only infrared, that is, a principle of mutual exclusion of Raman and infrared should hold. The present author concludes that H₂X and D₂X(X=O, S, Se, Te) have a linear D_∞h. structure, since the obtained spectra show mutual exclusion of Raman and infrared.     

N2（A）及N（2D）对IF（X）的传能研究

在微波放电系统中,对NH_3-F-F_2-CF_3I体系进行研究,结果表明,向IF(X)传能的诸多媒介中,N_2(A)及N(~2D)起着主要作用,并且这一结论在经微波激发后的N_2与CF_3I的直接反应中得到了进一步证实。     

PCl_X(X=1,2)分子基态的结构与势能函数

采用单双取代的二次组态相互作用( QCISD)方法,使用多种基组对PClx (X=1,2)分子基态结构进行优化计算,选出最优基组6-311+ G(df)和6-311G(df)分别对PCl和PCl2分子的离解能、谐振频率和力常数等进行计算,结果与实验值符合很好.在此基础上推导出PCl2分子基态的多体展式势能函数,其等值势能图正确反应了PCl2分子的结构特征及势阱深度,进一步讨论Cl+ PCl和P+ClCl分子反应的势能面特征.这些结果可用于微观反应动力学的研究.     

A12O3X2（X=H，D，T）的电子振动近似方法

用密度泛函理论在B3LYP／6．311＋＋g（d,P）基组水平上对A12O3X2（X=H,D,T）分子的可能较低能量构型进行了几何优化．结果表明该分子的基态电子态和对称性为A12O3X2（X=H,D,T）（1A’）G,计算了氢同位素分子及A12O3X2（X=H,D,T）的电子能量E、定容热容Cv和熵S．用电子振动近似方法计算了固体A12O3的氢化热力学函数△H0,△S0,△G0,以及平衡压力与温度的关系．当A1203吸附氢（氘,氚）形成固体时,反应的氢氘氚排代效应的顺序为氚排代氘,氘排代氢,与钛等金属与氢及其同位素反应的氢氘氚排代效应的顺序相反．总体来说,这种排代效应都非常弱．随着温度的增加,这系列反应的氢氘氚排代效应趋于消失．     

Analysis of Y(4660) and Related Bound States with QCD Sum Rules

In this article, we take the vector charmonium-like state Y(4660) as a ψ'f₀(980) bound state (irrespective of the hadro-charmonium and the molecular state) tentatively, and study its mass using the QCD sum rules. The numerical value M_Y=4.71 ± 0.26 GeV is consistent with the experimental data. Considering the SU(3) symmetry of the light flavor quarks and the heavy quark symmetry, we also study the bound states ψ' σ (400-1200), Υ''f₀(980), and Υ'' σ(400-1200) with the QCD sum rules, and make reasonable predictions for their masses.     

H2Se(X1A1)分子的解析势能函数

使用密度泛函B3LYP方法和 6-311++G**基组,在优化H2Se(X1A1)基态结构,确定其正确离解极限,计算所有两体项和三体项参数基础上,建立了H2Se(X1A1)的多体项展式解析势能函数。其中对处于激发态两体项HSe(A2∑+)的计算,则使用SAC-CI方法。H2Se(X1A1)的等值势能图准确地表现了其结构和势能面的特征。     

Bound states of the Klein－Gordon and Dirac equations for potential V0tanh2(r/d)

The exact bound state wavefunctions and energy equations of Klein－Gordon and Dirac equations are given with equal scalar and vector potential s(r)=v(r)=V(r)/2=V_0tanh^2(r/d). The relation between the energy equation and that of relativistic harmonic is discussed.     

Si(001)-(2*2*1):H表面O2吸附的密度泛函理论研究

建立了一种计算Si(001)-(2×2×1):H表面O2吸附的理论模型．在周期性边界条件下,采用基于密度泛函理论广义梯度近似的超软赝势法对Si(001)-(2×2×1):H表面O2吸附进行了第一性研究．通过占位能的计算,得到了Si(001)-(2×2×1):H表面O2的最佳吸附位置．计算结果表明吸附后的反应产物应为Si=O和H2O,从理论上支持了D．Kovalev等人提出反应机制．     

SeX(X=H,C,N,O)的结构与势能函数

用密度泛函B3LYP方法对SeX(X=H,C,N,O) 分子体系进行了理论研究,得到SeX(X=H,C,N,O) 分子体系的基态电子状态的平衡几何Re和离解能De,并在计算出来的一系列单点势能基础上,用正规方程组拟合Murrell-Sorbie(M-S)势能函数,得到相应态的解析势能函数,光谱参数Be、αe、ωe、和ωeχe为:HSe:7.74786cm-1、0.22000cm-1、2425.33344cm-1 and 39.51563cm-1;SeC:0.56678cm-1、0.00370cm-1、1021.70315cm-1、5.10000cm-1;NSe:0.45528cm-1、0.00375cm-1、946.30895cm-1、4.98923cm-1;OSe:0.45296cm-1、0.00001cm-1、889.77025cm-1、4.55983cm-1.由此计算对应的光谱参数和力学性质.结果表明SeX(X=H,C,N,O) 分子体系是可稳定存在的.     

YPd3X（X=B,C）晶体结构、弹性性质与电子结构的第一性原理研究

在广义梯度近似（GGA）和GGA+U（在位库仑势）下,采用第一性原理方法系统地研究了三元过渡金属硼碳化合物YPd3X(X＝B,C)的晶体结构、弹性性质、电子结构和成键特性．计算的晶格参数和体弹性模量均与报道的实验结果吻合,而YPd3X(X＝B,C) 的弹性参数计算值则表明YPd3C的硬度大于YPd3B．根据晶体机械稳定标准得到YPd3B和YPd3C的失稳临界压强分别约为16.5GPa和23GPa．由Pugh经验关系可知YPd3X(X=B,C)均属于韧性材料,且YPd3B的韧性略高于YPd3C．电子能带结构分析表明YPd3B和YPd3C均具有金属特性,且导电能力相当．由态密度和电荷密度分析得知,X与Pd之间形成较强的共价键,而Y与Pd3X之间形成离子键,化学键键能的不同是两种材料的弹性参数存在差异的内在原因．上述的研究结果为YPd3X(X=B,C)的力电材料的设计和应用提供了一定的理论依据．     

YPd3X(X=B,C)晶体结构、弹性性质与电子结构的第一性原理研究

在广义梯度近似(GGA)和GGA+ U(在位库仑势)下,采用第一性原理方法系统地研究了三元过渡金属硼碳化合物YPd3 X(X=B,C)的晶体结构、弹性性质、电子结构和成键特性.计算的晶格参数和体弹性模量均与报道的实验结果吻合,而YPd3 X(X=B,C)的弹性参数计算值则表明YPd3C的硬度大于YPd3B.根据晶体机械稳定标准得到YPd3B和YPd3C的失稳临界压强分别约为16.5 GPa和23 GPa.由Pugh经验关系可知YPd3X(X=B,C)均属于韧性材料,且YPd3B的韧性略高于YPd3C.电子能带结构分析表明YPd3B和YPd3C均具有金属特性,且导电能力相当.由态密度和电荷密度分析得知,X与Pd之间形成较强的共价键,而Y与Pd3X之间形成离子键,化学键键能的不同是两种材料的弹性参数存在差异的内在原因.上述的研究结果为YPd3X(X=B,C)的力电材料的设计和应用提供了一定的理论依据.     

Progress in science and technology on photostimulable BaFX:Eu (X=Cl, Br, I) and imaging plates

Imaging plate (IP) is a two-dimensional detector of ionizing radiation utilizing photostimulable BaFX:Eu²⁺ (X=Cl, Br, I). First type was developed about 20 years ago. As for the mechanism of the photostimulated luminescence (PSL), a lot of arguments have been done after the presentation of the first model by Takahashi et al. In principle, the model is supported by the recent papers.

In the meantime, the performance of IPs is drastically improved. Then, the computed radiography and the radioluminography (RLG) systems, which take advantage of the excellent feature in linearity and high sensitivity of IPs, were developed that became an inevitable equipment for medical diagnostics and scientific research. The late Professor Shigeo Shionoya greatly contributed to analysis of the PSL mechanism and development of the RLG technology.     

NFX(X=-1,0,+1)分子离子基态的结构与势能函数

用密度泛函理论的B3LYP方法,分别以6-311++g(df,3pd),6-311g(3d,3p)和6-311++g(3df,3pd)为基函数对NF分子、NF⁺和NF^-离子基态进行几何优化和频率计算,并进行单点能扫描计算.用最小二乘法拟合得到NF^X(X=-1,0,+1)分子离子基态的Murrell-Sorbie势能函数.利用得到的解析势能函数计算出的NF分子和NF⁺离子基态光谱常数(B_e,α_e,ω_e,ω_eχ_e)与实验值符合很好.首次得到NF^-离子基态的光谱常数(B_e,α_e,ω_e,ω_eχ_e)和力常数(f₂,f₃,f₄),为NF-离子基态的后期研究提供理论参考.     

CdxZn1-xO：Eu^3＋荧光粉的制备及其发光性质

采用高温固相法在1100℃下合成了Eu3 掺杂的CdxZn1-xO发光材料。采用X射线衍射对所合成样品的结构进行了表征。分析了不同浓度Cd2 的掺杂对于样品发光及激发峰位置的影响。通过对荧光光谱的测试,表明Cd2 的引入使得体系的禁带宽度变窄,并且通过Cd2 掺杂浓度的变化,可以对样品的激发光谱峰值在380～410nm进行调制,样品的发光以520nm处的宽带发射为主,并没有明显的Eu3 的特征发射,表明基质与Eu3 之间的能量传递并不有效。在加入Li 作为电荷补偿剂之后,出现了来自Eu3 的特征发射,相应的发射光谱的发射主峰位于609nm。样品380～410nm的激发峰范围覆盖了紫外LED芯片的输出波长。因此,这种荧光粉是一种可能应用在白光LED上的红色荧光粉材料。     

Continuous wavelength tuning of InAs quantum dots on InP (1 0 0) and (3 1 1)A substrates by chemical-beam epitaxy

The growth of InAs quantum dots (QDs) on InP (1 0 0) and (3 1 1)A substrates by chemical-beam epitaxy is studied. The InAs QDs are embedded in a GaInAsP layer lattice-matched to InP. We demonstrate an effective way to continuously tune the emission wavelength of InAs QDs grown on InP (1 0 0). With an ultra-thin GaAs layer inserted between the QD layer and the GaInAsP buffer, the peak wavelength from the InAs QDs can be continuously tuned from above 1.6 μm down to 1.5 μm at room temperature. The major role of the thin GaAs layer is to greatly suppress the As/P exchange during the deposition of InAs and subsequent growth interruption under arsenic flux, as well as to consume the segregated In layer floating on the GaInAsP buffer. Moreover, it is found that InP (3 1 1)A substrates are particularly promising for formation of uniform InAs QDs. The growth of InAs on InP (3 1 1)A consists of two stages: nanowire formation due to strain-driven growth instability and subsequent QD formation on top of the wires. The excellent size uniformity of the InAs QDs obtained on InP (3 1 1)A manifests itself in the narrow photoluminescence line width of 26 meV at 4.8 K.     

Molecular alloys as phase change materials (MAPCM) for energy storage and thermal protection at temperatures from 70 to 85 °C

Molecular alloys, that combine a relatively high heat of melting with a suitable melting temperature adapted to the application temperature, are excellent materials for thermal protection and for thermal energy storage. Of special interest is the fact that, by making alloys of molecular materials; the range of melting can be adjusted over a range of temperatures. The present paper reports on the design of MAPCMs to be used for energy storage and thermal protection at temperatures from 70 to 85 °C. The aim is to use these materials for thermal protection in the catering sector in order to avoid proliferation of micro organisms; the minimal temperature required is higher than 65 °C. The work illustrates how some fundamental studies are helpful in choosing the right composition that is able to work at the temperature required for an application. Several molecular alloys using the n-alkanes are elaborated and characterized. The preparation of mixed crystals, their crystallographic and thermodynamic properties and stability, phase change behaviour, and their use in practical applications are reported.     

Electronic structure and structural phase stability of CuAlX2 (X=S, Se, Te) under pressure

The electronic and structural properties of chalcopyrite compounds CuAlX₂ (X=S, Se, Te) have been studied using the first principle self-consistent Tight Binding Linear Muffin-Tin Orbital (TBLMTO) method within the local density approximation. The present study deals with the ground state properties, structural phase transition, equations of state and pressure dependence of band gap of CuAlX₂ (S, Se, Te) compounds.Electronic structure and hence total energies of these compounds have been computed as a function of reduced volume. The calculated lattice parameters are in good agreement with the available experimental results. At high pressures, structural phase transition from bct structure (chalcopyrite) to cubic structure (rock salt) is observed. The pressure induced structural phase transitions for CuAlS₂, CuAlSe₂, and CuAlTe₂ are observed at 18.01, 14.4 and 8.29 GPa, respectively. Band structures at normal as well as for high-pressure phases have been calculated. The energy band gaps for the above compounds have been calculated as a function of pressure, which indicates the metallic character of these compounds at high-pressure fcc phase. There is a large downshift in band gaps due to hybridatization of the noble-metal d levels with p levels of the other atoms.     

In situ neutron diffraction study (300-1273 K) of non-stoichiometric strontium ferrite SrFeOx

The high-temperature cubic phase of non-stoichiometric strontium ferrite SrFeO_x (2.5≤x≤3.0) has been studied by in situ neutron powder diffraction in air over the temperature range 300-1273 K. The composition of SrFeO_x changes within the range 2.56≤x≤2.81 from 1273 to 673 K, respectively.Rietveld refinements of the diffraction patterns show that the high-temperature cubic phase of SrFeO_x is consistent with a face-centred Fm3c structure. This structure leads to agreement with previous density measurements. This cell allows the high-temperature structure of SrFeO_x to be described in terms of a solid solution of the composition end members. Cubic SrFeO_x at high temperature is found to closely obey Vegard's law. The density of cubic SrFeO_x is also found to exhibit a linear relationship with composition.     

7-(3,6-二硝基-N-p-乙烯基苯基咔唑)香豆素分子的光谱和激发态的密度泛函理论研究

采用密度泛函理论(DFT)对7-(3,6-二硝基-N-p-乙烯基苯基咔唑)香豆素分子做理论研究。用B3LYP/6-31G(d,p)对其几何结构进行优化,得到其最稳定构型及能量。在优化结构的基础上,对其进行频率分析得到了分子的红外光谱和拉曼光谱,并对谱线中的各峰值做了具体指认,同时也得到了分子的最高占据轨道(HOMO)和最低空轨道(LUMO)能隙为2.150eV。利用含时密度泛函理论(TDDFT)对该分子的激发态进行计算,得到最低十个跃迁允许的单激发态。对前线分子轨道最高占据轨道和最低空轨道分析得到,C-C原子之间形成了离域π键。研究结果表明:7-(3,6-二硝基-N-p-乙烯基苯基咔唑)香豆素是一种良好的有机半导体材料,并具有很好的发光性能。