铬锰复合掺杂对氧化铝陶瓷真空耐压性能的影响

在掺有0.5wt; Cr2O3的95;氧化铝瓷基础上掺入0～1.5wt;的MnO2,研究了铬锰复合掺杂即MnO2掺入量对氧化铝陶瓷物相、显微结构、烧结性能、电阻率、介电常数和真空耐压性能的影响.结果表明,MnO2掺杂通过固溶进Al2O3晶格,促进了95;氧化铝陶瓷的烧结和晶粒生长,提高了显微结构的均匀性和致密性.随着MnO2掺入量的增加,材料的电阻率明显下降,介电常数略微减小.铬锰复合掺杂对氧化铝陶瓷真空耐压性能的影响与MnO2的掺入量密切相关.在掺0.5wt; Cr2O3的情况下,当MnO2掺入量为1～1.5wt;时,材料的闪络电压高于未掺杂MnO2的样品,掺1.5wt; MnO2样品的闪络电压最高,达54 kV/cm.     

TiO2烧结助剂对纳米η-Al2 O3制备氧化铝陶瓷的影响

为降低氧化铝陶瓷制备成本,改善其性能,以价格低廉的纳米η-Al2 O3为原料,TiO2为烧结助剂,制备氧化铝陶瓷.研究了TiO2加入量对纳米η-Al2 O3氧化铝陶瓷的体积密度、显气孔率、物相组成和微观结构的影响.结果表明:TiO2通过增加氧化铝中铝离子点缺陷数量而提高其扩散系数,促进氧化铝陶瓷的致密化及晶粒的生长.η-Al2 O3到α-Al2 O3的相变首先在氧化铝颗粒表面进行,然后迅速扩散至内部完成.通过计算晶胞参数大小,定量证明刚玉晶体发育良好,引入适量TiO2对氧化铝陶瓷高温性能和化学稳定性影响较小.当TiO2加入量为2wt;,烧结温度为1600℃时,氧化铝陶瓷的性能优良,体积密度为3.70 g/cm3、显气孔率为1.2;,存在一定数量的晶间气孔和晶内气孔,晶体间结合紧密,晶粒尺寸10～30μm.     

MgO含量对CaZrO3-MgO陶瓷烧结特性及组成与结构的影响

采用常压烧结方法制备了CaZrO3-MgO陶瓷.研究了MgO含量对CaZrO3-MgO陶瓷的显气孔率、体积密度、抗弯强度、物相组成、显微结构和断裂方式的影响.结果表明:含有lwt;～3wt; MgO的CaZrO3-MgO陶瓷由CaZrO3单相构成,气孔率低,体积密度高,抗弯强度大,断裂方式为穿晶与沿晶共存的混合断裂;含有20wt; ～40wt; MgO的CaZrO3-MgO陶瓷由MgO和CaZrO3两相构成,气孔率高,体积密度低,抗弯强度小,CaZrO3与MgO两相间的断裂方式为沿晶断裂;当MgO含量为2wt;时CaZrO3-MgO陶瓷的烧结性能最好,当MgO含量为40wt;时CaZrO3-MgO陶瓷的烧结性能最差.少量Mg2+的引入因其向CaZrO3中单向扩散而促进材料烧结,大量Mg2+的引入因其与Zr4+互扩散导致CaZrO3分解而阻碍材料烧结.     

Nd2O3对稻壳合成多孔堇青石陶瓷的影响

用稻壳为硅源和成孔剂,以Nd2O3为添加剂,在1350 ℃烧成了多孔堇青石陶瓷.利用XRD分析了试样在烧结过程中的物相变化,利用SEM观察了烧结试样的显微结构,并测定了烧结试样的抗弯强度、气孔率.结果表明:与未掺Nd2O3的试样相比,掺杂3 wt;Nd2O3后,烧结试样的气孔率无明显变化,但其抗弯强度增加了约4倍,且堇青石的形成温度显著降低.     

稀土Sm2O3对98氧化铝陶瓷耐磨性能的影响

实验以98wt; Al2O3为基体,在CaO-MgO-Al2O3-SiO2四元体系中,研究添加稀土Sm2O3对98氧化铝陶瓷烧结温度、体积密度以及耐磨性能的影响.实验结果表明:添加适量的稀土氧化钐能够降低陶瓷的初始烧结温度并且提高氧化铝陶瓷的体积密度和耐磨性能.当稀土氧化钐的掺量达到1.6wt;时,陶瓷的磨损率达到最低,较不掺稀土的氧化铝陶瓷试样,耐磨性提高了约30.9;.除此之外,发现稀土Sm3+固溶到六铝酸钙中,增强了晶界结合强度,提升了陶瓷耐磨性能.     

发泡剂含量对YAG多孔陶瓷的性能影响研究

采用共沉淀法合成YAG粉体,经过配料、干压成型和真空烧结制备YAG多孔陶瓷材料,并研究发泡剂含量对YAG多孔陶瓷的性能影响.结果表明:YAG多孔陶瓷随着发泡剂含量逐渐增多,其气孔率逐渐增高,抗压强度逐渐降低.烧结温度升高,气孔率下降,抗压强度升高.保温时间延长,气孔率降低,抗压强度升高,但是YAG多孔陶瓷的性能对于烧结温度和保温时间而言,烧结温度相对更为敏感.综合整个烧结工艺及性价比,YAG多孔陶瓷发泡剂含量为15wt;并在1550℃烧结保温lh较为适宜.     

MgO-CaZrO3-ZrO2系含MgO复合陶瓷的结构与烧结性能

以烧结镁砂、单斜氧化锆和实验室预合成锆酸钙为原料,采用常压烧结法制备了MgO-CaZrO3-ZrO2系含MgO复合陶瓷,研究了ZrO2含量、CaZrO3含量及CaZrO3/ZrO2质量比对其复合陶瓷结构与烧结性能的影响.结果表明:高温下Zr4+、Ca2+、Mg2+离子的扩散、c-ZrO2(Zr0.875 Mg0.125 O1.875或Zr0.8 Mg0.2 O1.8)的形成及CaZrO3脱CaO分解等,是影响MgO-CaZrO3-ZrO2系含MgO复合陶瓷结构与烧结性能的重要因素;其中MgO-ZrO2复合陶瓷的断裂方式为穿晶断裂,MgO-CaZrO3复合陶瓷和MgO-CaZrO3-ZrO2复合陶瓷的断裂方式为以沿晶断裂为主的混合断裂,其复合陶瓷的烧结强度依次降低;当ZrO2含量为20wt;～40wt;、CaZrO3含量为10wt;～40wt;及CaZrO3/ZrO2质量比为6/1～5/2时可分别制得烧结性能较好的MgO-ZrO2、MgO-CaZrO3和MgO-CaZrO3-ZrO2复相陶瓷.     

Mg2+掺杂Li4Ti5O12陶瓷靶材的制备及其性能研究

本实验以Mg(OH)2作为镁源,将1wt;、2wt;、3wt;、4wt;、5wt;的Mg(OH)2粉末与纯Li4Ti5O12粉末球磨混合,使用粉末冶金的方法烧结制备出了Mg2+掺杂的Li4Ti5O12陶瓷靶材,分别研究了烧结温度为880 ℃、900 ℃、930 ℃、950 ℃、980 ℃时Mg2+掺杂Li4Ti5O12陶瓷靶材的收缩率、致密度和力学性能的变化情况;通过对Mg2+掺杂Li4Ti5O12陶瓷靶材进行XRD衍射分析和断面的SEM分析可以得出,Mg(OH)2的最佳掺杂量为4wt;,陶瓷靶材的最佳烧结温度为950 ℃.可以得到抗弯强度为83.189 MPa、相对密度为96.041;、维氏硬度为的364.26HV500、物相单一的Mg2+掺杂的Li4Ti5O12陶瓷靶材.     

MgO-CeO2烧结助剂对高SiC含量SiC基复相陶瓷致密性与导热性能的影响

以MgO-CeO2为烧结助剂,采用热压烧结工艺在1850C制备了SiC含量为80wt;的SiC-AlN复相陶瓷.研究了不同助剂含量对复相陶瓷致密性与导热性能的影响.结果表明:适量的烧结助剂能够对SiC-AlN复相陶瓷起到促进烧结作用.烧结助剂含量为6wt;时,样品显气孔率偏大;当助剂含量提高至8wt;～14wt;时,样品显气孔率显著降低,能够完全烧结致密化.复相陶瓷在烧结助剂含量为1Owt;时获得最佳的致密性,其显气孔率仅为0.14;.在烧结助剂含量为8wt;时,样品具有最高的热导率51.72 W·m-1·K-1.复相陶瓷的热导率主要受样品致密性和晶界相的影响,不足或过量的烧结助剂都会使样品的热导率降低.     

烧结助剂及β-Si3N4添加量对多孔氮化硅陶瓷性能的影响

通过添加不同烧结助剂(Lu2O3、Y2O3和Al2O3)及β-Si3N4粉末含量,采用常压烧结工艺制备出性能优异的多孔氮化硅陶瓷.研究了烧结助剂种类及β-Si3N4添加量对多孔氮化硅陶瓷物相、微观组织和力学性能的影响.结果表明:当Lu2O3添加量为5 wt;、β-Si3N4为3 wt;时,制备了由长柱状β-Si3N4晶粒组成、平均长径比为6.87、直径为0.6μm长度为4.4～10.4 μm的多孔氮化硅陶瓷,其抗弯强度可达330.7 MPa.β-Si3N4添加量至5 wt;时,柱状晶粒发育良好,长径比增加至7以上,气孔率高达48;,但抗弯强度下降.     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.