Effect of the orientation of strain axes on the creep in Ni<Subscript>3</Subscript>Ge alloy single crystals

The creep in Ni₃Ge alloy single crystals with strain axis orientations of [001], [$ \bar 1 $ \bar 1 39], [$ \bar 2 $ \bar 2 34], and [$ \bar 1 $ \bar 1 22] was investigated. It was found that changes in strain axis orientation that lead to cubic slip increase the creep resistance of Ni₃Ge alloy single crystals.     

Anisotropy of elastic strains and specific features of the defect structure of <Emphasis Type="Italic">a</Emphasis>-plane GaN epitaxial films grown on <Emphasis Type="Italic">r</Emphasis>-plane sapphire

The structural state of GaN epitaxial layers grown on r-plane sapphire through metal-organic vapor phase epitaxy has been investigated using X-ray diffraction. The interplanar spacings in two directions in the (11$ \bar 2 $ \bar 2 0) plane of the interface and in the direction perpendicular to it, as well as the diffraction peaks in the ϑ and ϑ-2ϑ scan modes in the Bragg and Laue geometries, are measured on double- and triple-crystal diffractometers. The intensity distribution maps for asymmetric Bragg reflections are constructed for two azimuthal positions of the sample. An analysis of the data obtained has demonstrated that the elastic strain is anisotropic and that the X-ray diffraction pattern parallel to the interface plane is broadened. The layers are contracted in the [1$ \bar 1 $ \bar 1 00] direction and unstrained in the [0001] direction. The broadening of the Bragg reflections in the [1$ \bar 1 $ \bar 1 00] direction is considerably larger than that in the [0001] direction. It is shown using the Williamson-Hall plots for the Bragg and Laue reflections that these broadenings are not related to different degrees of mosaicity but are determined by the local dilatations and misorientations around defects. The data obtained are analyzed, and the conclusions regarding the dislocation structure of the samples are drawn.     

Ternary thallium-based semimetal chalcogenides Tl-V-VI<Subscript>2</Subscript> as a new class of three-dimensional topological insulators

The results of the theoretical investigation of the bulk and surface electronic structures of Tl-V-VI₂ compounds, where V is the Bi or Sb semimetal and VI is the Se or Te chalcogen, are reported. It has been shown that these compounds are three-dimensional topological insulators. Both a topologically protected surface state, which forms a Dirac cone at the $ \bar \Gamma $ \bar \Gamma point, and occupied surface states, which are localized in the band gap, are present on the surface of these compounds.     

On possible deep subsurface states in topological insulators: The PbBi<Subscript>4</Subscript>Te<Subscript>7</Subscript> system

Theoretical studies of the bulk and surface electronic structures of PbBi₄Te₇ are presented. The PbBi₄Te₇ compound has a layered structure of five-layer (Bi₂Te₃) and seven-layer (PbBi₂Te₄) blocks alternating along the hexagonal axis. Analysis of the spin-orbit-induced inversion of the band gap edges indicates that this compound is a three-dimensional topological insulator. The topological properties of this compound are mainly determined by the PbBi₂Te₄ blocks. The Dirac cone is formed on the PbBi₄Te₇(0001) surface near the $ \bar \Gamma $ \bar \Gamma point for any block (either Bi₂Te₃ or PbBi₂Te₄) forming the surface. It is shown that the Dirac state can be localized not only on the surface but also deeply beneath it.     

Energy gaps at neutrality point in bilayer graphene in a magnetic field

Utilizing the Baym-Kadanoff formalism with the polarization function calculated in the random phase approximation, the dynamics of the ν = 0 quantum Hall state in bilayer graphene is analyzed. Two phases with nonzero energy gap, the ferromagnetic and layer asymmetric ones, are found. The phase diagram in the plane ($ \bar \Delta _0 $ \bar \Delta _0 , B), where $ \bar \Delta _0 $ \bar \Delta _0 is a top-bottom gates voltage imbalance, is described. It is shown that the energy gap scales linearly, ΔE ∼ 14B [T] K, with magnetic field.     

Localized electron states in the continuous spectrum of the Cu(001) monolayer

The results of the calculation of electron bands of bound states that cross the edge of the continuous spectrum for the (001) fcc copper monolayer are presented for the first time. The calculations are performed in the local approximation for the exchange and correlations using the film variant of the Green’s function technique. Symmetry of electron states near the edge of the continuous spectrum is explored. It is found that there are bound states along the $ \bar \sum $ \bar \sum direction of the two-dimensional Brillouin zone of the Cu(001) monolayer that are embedded in the continuum of delocalized states of the continuous spectrum. Along the $ \bar \Delta $ \bar \Delta and $ \bar Y $ \bar Y directions, bands of bound states turn into resonance states after crossing the edge of the continuous spectrum.     

Most dangerous slip direction in face-centered cubic silver crystals under (111)〈$$ \bar 2 $$〉 shear deformation

Using computer simulation, the failure mechanism of an fcc silver crystal under (111)〈$ \bar 2 $ \bar 2 〉 shear deformation is studied and the direction of unstable atomic displacement under the conditions of dynamic stability violation is determined. It is shown that the most dangerous direction of atomic motion, which makes the crystal structurally unstable, does not completely coincide with the 〈$ \bar 2 $ \bar 2 〉 direction lying in the (111) plane and has a component normal to the [111] direction.     

La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> thin films on SrTiO<Subscript>3</Subscript> and CaTiO<Subscript>3</Subscript> buffered Si substrates: structural,static, and dynamic magnetic properties

Nearly 50-nm thick La_0.7Sr_0.3MnO₃ (LSMO) films were grown on Si substrates using molecular beam epitaxy on (001) Si substrates over-layered by a 20 nm thick SrTiO₃ (STO) or by a 20 nm thick CaTiO₃ (CTO) film. In addition, a reference LSMO film was directly deposited on a (001) STO substrate by pulsed laser deposition. For all the samples, X-ray diffraction revealed an excellent epitaxy of the LSMO film and small mosaicity around (001), with in-plane [100] and [010] cubic axes. The LSMO/CTO films are in-plane compressed while the LSMO/STO ones are in-plane extended. The temperature dependence of their static magnetic properties was studied using a SQUID, showing a Curie temperature overpassing 315 K for all the samples. Hysteresis loops performed at room temperature (294 K) with the help of a vibrating sample magnetometer (VSM) are also discussed. At 294 K Micro-strip ferromagnetic resonance (MS-FMR) was used to investigate the dynamic magnetic properties. It allows concluding to a strong anisotropy perpendicular to the films and to a weak fourfold in-plane anisotropy with easy axes along the [110] and [1[`1]0 1\bar{1}0 ] directions. Their values strongly depend on the studied sample and are presumably related to the strains suffered by the films.     

The layer disorders defect in coir fiber under thermal and chemical treatment

Natural coir fibers, subjectd to thermal treatments in the range of 0°C to 200°C and alkali treatment with 5% to 30% concentration w/w, have been used in the present investigation to determine the interlayer variability of the cellulose planes (020), (110) and (1$ \bar 1 $ \bar 1 0). Among the equatorial reflections (110), (1$ \bar 1 $ \bar 1 0) and (020), the extent of variability is found to be more with the proportion of such affected planes less for (020) reflection in the native cellulose at lower temperature while at higher temperature (110) and (1$ \bar 1 $ \bar 1 0) become more affected by variability defect. (110) and (1$ \bar 1 $ \bar 1 0) planes are more affected also with alkali treatment.     

The emission spectrum of <Emphasis Type="Italic">p</Emphasis>-AlGaAs/GaAsP/<Emphasis Type="Italic">n</Emphasis>-AlGaAs diodes under uniaxial compression

New experimental data are presented on the effects of uniaxial compression of up to 4 kbar along the [110] and [1$ \bar 1 $ \bar 1 0] crystallographic directions on the spectra of electroluminescence and the current-voltage characteristics of diodes based on n-Al _x Ga_{1 − x} As/GaAs _y P_{1 − y} /p-Al _x Ga_{1 − x} As (y = 0.84) heterostructures that were designed for injection lasers. With increasing pressure, the spectra show a shift to shorter wavelengths, reaching 25 meV at 3 kbar; the intensity increases 2–3 times as well. Numerical calculations were carried out on the band structure of the investigated heterostructures under compression along the [110] axis, which indicate the increase in the effective band gap in the quantum well (QW) GaAs _y P_{1 − y} , with a pressure coefficient of about 8.5 meV/kbar and reduction of the barrier height at the boundaries of the QW. The calculations predict the possibility that light and heavy holes crossover at pressures above 4.5–5 kbar. The increase in the effective band gap completely describes the experimental data on the shift of the electroluminescence spectra. The mixing of light and heavy holes when approaching the band crosspoint is the probable cause of an increase in the intensity of radiation under uniaxial compression.     

Properties of neutral charmed mesons in <Emphasis Type="Italic">pA</Emphasis> interactions at 70 GeV

The results of data handling for the E-184 experiment involving the irradiation of the active target, consisting of carbon, silicon, and lead plates by a 70-GeV proton beam are presented. When the two-prong neutral charmed meson decay signal was selected and the cross section for charm production at a near-threshold energy was estimated (σ(c $ \bar c $ \bar c ) = 7.1 ± 2.4(stat.) ± 1.4(syst.) μb/nucleon), some properties of D ⁰ and $ \bar D^0 $ \bar D^0 were investigated. These include the atomic-weight dependence of the cross section on the target mass number (its A dependence); the differential cross sections dσ/dp _t ² and dσ/dx _F; and the dependence of the parameter α on x _F, p _t ², and p _lab. The experimental results are compared with the predictions of the FRITIOF7.02 program.     

Multiplicity distribution in proton-proton and proton-antiproton collisions at high energies

Multiplicity distributions of secondary hadrons produced in p $ \bar p $ \bar p and collisions are very different. There are three types of inelastic processes in p $ \bar p $ \bar p scattering. The first one is the production of a shower of secondary hadrons in gluon string decay. The second one is the shower produced from the decay of two quark strings, and the third one is the shower produced from the decay of three quark strings. At the same time, there are just two types of inelastic processes for pp scattering: the shower from the gluon string and the shower from two quark strings. The multiplicity distribution and the average multiplicity of charged hadrons for an energy of 14 TeV are predicted.     

Laser-induced optical activity in range of Rydberg autoionizing states of xenon

Optical activity of xenon atoms in the vacuum UV range induced by circularly polarized laser light is studied theoretically. The optical activity arises in the vicinity of the autoionizing state 5p ⁵(² P _1/2)8s′$ \left[ {\frac{1} {2}} \right]_1 $ \left[ {\frac{1} {2}} \right]_1 as a result of its coupling via the laser field with the discrete state 5p ⁵(² P _3/2)7p $ \left[ {\frac{1} {2}} \right]_1 $ \left[ {\frac{1} {2}} \right]_1 . Polarization variations of the vacuum UV radiation upon its propagation through the atomic medium are calculated, and the possibility of controlling this polarization is discussed. Manifestations of nonresonant coupling of the discrete state with the broad autoionizing state 5p ⁵(² P _1/2)6d′$ \left[ {\frac{1} {2}} \right]_1 $ \left[ {\frac{1} {2}} \right]_1 induced by the overlap of the Rydberg autoionizing series in xenon are studied.     

Confinement singularities in two-pion decays of mesons

We consider as an example the two-pion decay of the ρ meson, the ³ S ₁ q $ \bar q $ \bar q state of the constituent quarks—the decay being determined by the transition q $ \bar q $ \bar q → ππ contains information about confinement interactions. One can specify in this decay two types of transitions: (i) the bremsstrahlung radiation of a pion q → q + π (or $ \bar q $ \bar q → $ \bar q $ \bar q + π) with a subsequent fusion q $ \bar q $ \bar q → π, and (ii) the direct transition q $ \bar q $ \bar q → ππ. We demonstrate how in the amplitudes of the corresponding transitions the quark singularities have to disappear, i.e., what is the way the quark confinement at relatively short distances can be realized. We calculate and estimate the contributions of processes with bremsstrahlung radiation of the pion and of the direct transition q $ \bar q $ \bar q → ππ. The estimates demonstrate that the processes involving the direct transition q $ \bar q $ \bar q → ππ are necessary, but they cannot be determined unambiguously by the decay ρ(775) → ππ. We conclude that for the determination of the q $ \bar q $ \bar q → ππ transition more complete data on the resonance decays into the ππ channels are needed than those available at the moment.     

Structural changes during phase transitions and the critical and noncritical order parameters in the (NH<Subscript>4</Subscript>)<Subscript>3</Subscript>Nb(O<Subscript>2</Subscript>)<Subscript>2</Subscript>F<Subscript>4</Subscript> crystal

The structures of two phases of the (NH₄)₃Nb(O₂)₂F₄ crystal, namely, the parent cubic phase and the most distorted low-temperature phase, have been determined from data of an X-ray diffraction experiment performed for a powder sample. The profile and structural parameters have been refined according to the procedure implemented in the DDM program. The results obtained have been discussed with invoking the group-theoretical analysis of the complete order parameter condensate, which takes into account the critical and noncritical atomic displacements and allows the interpretation of the obtained experimental data. It has been found that the most probable sequence of structural transformations occurring in the crystal can be schematically represented in the following form:

Spin correlations in the ΛΛ and Λ$$ \bar \Lambda $$ systems generated in relativistic heavy-ion collisions

Spin correlations for the ΛΛ and Λ$ \bar \Lambda $ \bar \Lambda pairs, generated in relativistic heavy-ion collisions, and related angular correlations at the joint registration of hadronic decays of two hyperons, in which space parity is not conserved, are analyzed. The correlation tensor components can be derived from the double angular distribution of products of two decays by the method of “moments”. The properties of the “trace” of the correlation tensor (a sum of three diagonal components), determining the relative fractions of the triplet states and singlet state of respective pairs, are discussed. Spin correlations for two identical particles (ΛΛ) and two nonidentical particles (Λ$ \bar \Lambda $ \bar \Lambda ) are considered from the viewpoint of the conventional model of one-particle sources. In the framework of this model, correlations vanish at sufficiently large relative momenta. However, under these conditions, in the case of two nonidentical particles (Λ$ \bar \Lambda $ \bar \Lambda ) a noticeable role is played by two-particle annihilation (two-quark, two-gluon) sources, which lead to the difference of the correlation tensor from zero. In particular, such a situation may arise when the system passes through the “mixed phase.”     

DO<Subscript>3</Subscript>-type cubic structure of nonstoichiometric vanadium monoxide

An X-ray diffraction study indicates that nonstoichiometric vanadium monoxide VO _y ≡ V _x O _z (y = z/x) has a cubic structure of the DO₃ type (space group Fm $ \bar 3 $ \bar 3 m), where vanadium atoms are not only at the 4(a) sites of the metal fcc sublattice, but also at the tetrahedral 8(c) sites. This circumstance fundamentally distinguishes monoxide VO _y from strongly nonstoichiometric MX _y compounds with the B1 structure and the same space group, where atoms M and X and structural vacancies ▪ and ▭ of the metal and nonmetal sublattices, respectively, are distributed over the 4(a) and 4(b) sites. The dependence of the filling factor q of the tetrahedral interstices by vanadium atoms on the relative content y of oxygen in VO _y has been obtained. It has been shown that the composition of cubic vanadium monoxide should be represented as VO _y ≡ V _x O _z ≡ V _{x − 2q} V_2q ^(t)▪_{1 − x + 2q} O _z ▭_{1 − z} , taking into account the structure.     

Anomalous structure of the crust and mantle of mars

This study determined the contribution of Martian topography and the density jump at the Mohorovicic discontinuity (M) to the gravity in a quadratic approximation. It also resolved the problem of determining the possible depths of compensation for topography harmonics of various degrees and orders. It shows that all the topography compensation is within the depth range from 0 to 1400 km. Different topographic irregularities are most likely to be compensated at depths that correspond to the upper crust ($ \bar d = 4.5 \pm 3.7{\text{ km}} $ \bar d = 4.5 \pm 3.7{\text{ km}} ), crust-mantle transition layer ($ \bar d = 78 \pm 24{\text{ km}} $ \bar d = 78 \pm 24{\text{ km}} ), lithospheric boundary ($ \bar d = 200 \pm 34{\text{ km}} $ \bar d = 200 \pm 34{\text{ km}} ), upper-middle mantle transition layer ($ \bar d = 400 \pm 70{\text{ km}} $ \bar d = 400 \pm 70{\text{ km}} ), or middle-lower mantle transition layer ($ \bar d = 1120 \pm 180{\text{ km}} $ \bar d = 1120 \pm 180{\text{ km}} ). This paper presents the lateral distributions of compensation masses for these depths and the respective maps. According to calculations, stresses in the Martian crust and mantle may be as high as 10⁸ Pa. This paper shows that the topographic anomalies of the Tharsis volcanic plateau and the symmetric formation in the eastern hemisphere could have originated and be dynamically maintained by two plumes of melted mantle substance enriched with fluids; these plumes may have their origin at the boundary of the lower mantle.     

Radiation damages under irradiation of the BCS superconductor MgB<Subscript>2</Subscript> by high-energy electrons

This paper reports on the results of investigations of the influence of irradiation of the two-band BCS superconductor MgB₂ by electrons with an average energy $ \bar {\rm E} $ \bar {\rm E} ∼ 10 MeV at high doses (0 ≤ ϕt ≤ ∼2.5 × 10¹⁸ cm⁻²) on the temperature and width of the transition to the superconducting state, the temperature dependence of the electrical resistivity in the normal state, the crystal lattice parameters, and the diffraction line intensity. An increase in the electron irradiation dose ϕt leads to the following effects: a decrease in the critical temperature T _c ; an increase in the width of the superconducting transition ΔT _c ; and a decrease in the “residual electrical resistivity” ρ_{273 K}/ρ_{40 K}, in the parameters a and c of the hexagonal crystal lattice, and in the ratio between the diffraction line intensities I ₁₁₀/I ₁₀₀. From analyzing the results obtained, it has been established that the main type of radiation damages under irradiation of the BCS superconductor MgB₂ by high-energy electrons is the formation of vacancies in the B sublattice, which leads to a narrowing of the large band gap Δ_σ on the Fermi surface.     

Production of strange secondaries in high-energy Σ<Superscript>−</Superscript><Emphasis Type="Italic">A</Emphasis> collisions

The WA89 Collaboration experimental data on production of Λ, Σ⁻, Σ⁺, Ξ⁻, Ω⁻ baryons, $ \bar \Lambda $ \bar \Lambda and $ \bar \Xi ^ + $ \bar \Xi ^ + antibaryons in Σ⁻ collisions with C and Cu targets at 345 GeV/c ($ \sqrt {s_{\Sigma N} } $ \sqrt {s_{\Sigma N} } ≈ 25.5 GeV) in the frame of the Quark-Gluon String Model is described. The comparison of the theoretical results with the experimental data is discussed. Finally, some relations among the values of the model parameters obtained with the help of quark combinatorics are presented.