MoSi_2(001)表面的氧吸附行为

运用第一原理密度泛函理论方法,首先计算了MoSi_2各清洁表面的表面能,(001)Si-|-Si断面具有较低的表面能,是MoSi_2最可能的解理面;通过生成能及键布居分析研究了单氧原子、双氧原子及氧分子在(001)Si-|-Si断面的吸附行为,发现单氧原子在空位处吸附最稳定,此时O极易与Si结合,得到的Si-O-Si键长及键角与SiO_2的非常接近,表明低浓度下O极易与表面的Si结合生成SiO_2;双氧原子发生空位+顶位吸附时O原子除与Si有强作用外,可与Mo有一定相互作用;氧分子以平行的方式接近空位最有利于吸附,此时氧分子最易分解为氧原子,发生氧原子在空位的吸附.     

Hydrogen adsorption on the silicon (001) surface and on a step on the (111) surface

Adsorption of atomic hydrogen on an ideal (001) silicon surface is investigated in the present paper. Saturation of one of the two dangling bonds of a silicon atom on this surface by hydrogen removes the interaction (hybridization) between them, resulting in the appearance of a bonding and an antibonding chemisorption state associated with the attacked dangling bond, and in the shift of the peak of the remaining unsaturated dangling bond to the energy typical of a surface state of the (111) surface. Further saturation leads to the disappearance of this peak from the energy spectrum. An analogous situation occurs for the silicon atom with two dangling bonds on a step on the (111) surface, when hydrogen is chemisorbed. Both examples testify to the local chemical nature of Shockley surface states in silicon.The authors thank A. N. Sorokin for useful discussions.     

Impact induced adsorption of C on silicon (001) surface

Molecular dynamics simulations were carried out to investigate the adsorption of a low-energy C₂₀ on a reconstructed silicon (001)-(2×12\times1) surface. The impact energies of the C₂₀ fullerene range from 1 eV/atom to 5 eV/atom. After impacting, the C₂₀ molecule is found to move along (011) direction and resides either in the trough or on the dimer at the end of our simulations. The lateral motion of C₂₀ on the surface is dependent on its incident energy. Chemical bonds are formed between C₂₀ and the surface. By the force field analysis, we show that the anisotropic molecule-surface interaction plays the leading role in the lateral motion of C₂₀ as well as its preferable adsorption sites on the dimerized Si surface. These findings are consistent with experimental observations of C₆₀ on Si (001) surface and small carbon clusters on solid surfaces.     

Structure of ultra-thin Ti film on the Al(001) surface

The atomic structure of sub-monolayer amounts of Ti deposited on the Al(001) surface at room temperature has been investigated using low-energy electron diffraction (LEED) and low-energy ion scattering spectroscopy (LEIS). The Ti coverage was determined using Rutherford backscattering spectroscopy (RBS). Though a crisp LEED image is inherently difficult to obtain, the symmetry of the observed c(2 × 2) LEED images allows us to infer a structure which places Ti atoms in every other Al lattice site. Analysis of the LEIS azimuth- and polar-angle scan spectra has been done to determine the best structural model which supports the c(2 × 2) symmetry of the LEED image as well as LEIS experimental data. It was concluded that the best model consistent with the experimental data, puts Ti preferentially below the surface of the Al substrate at every other lattice site for sub-monolayer coverage of Ti on Al(001). As Ti coverage increases, the presence if Ti atoms in the surface layer also increases. Results of this study are relevant to research pertaining to the possible use of Ti as a catalyst in sodium alanate (NaAlH₄) in hydrogen storage applications.     

The GaP(001) surface and the adsorption of Cs

GaP(001) cleaned by argon-ion bombardment and annealed at 500°C showed the Ga-stabilized GaP(001)(4 × 2) structure. Only treatment in 10^?5 Torr PH₃ at 500°C gave the P-stabilized GaP(001)(1 × 2) structure. The AES peak ratio $\text{P}\text{Ga}$ is 2 for the (4 × 2) and 3.5 for the (1 × 2) structure. Cs adsorbs with a sticking probability of unity up to 5 × 10¹⁴ Cs atoms cm^?2 and a lower one at higher coverages. The photoemission measured with uv light of 3660 Å showed a maximum at the coverage of 5 × 10¹⁴ atoms cm^?2. Cs adsorbs amorphously at room temperature, but heat treatment gives ordered structures, which are thought to be reconstructed GaP(001) structures induced by Cs. The LEED patterns showed the GaP(001)(1 × 2) Cs structure formed at 180°C for 10 h with a Cs coverage of 5 × 10¹⁴ atoms cm^?2, the GaP(001)(1 × 4) Cs formed at 210°C for 10 hours with a Cs coverage of 2.7 × 10¹⁴ atoms cm^?2, the GaP(001)(7 × 1) and the high temperature GaP(001)(1 × 4), the latter two with very low Cs content. Desorption measurements show three stability regions: (a) between 25–150°C for coverages greater than 5 × 10¹⁴ atoms cm^?2, and an activation energy of 1.2 eV; (b) between 180–200°C with a coverage of 5 × 10¹⁴ atoms cm^?2, and an activation energy of 1.8 eV; (c) between 210–400°C with a coverage of 2.7 × 10¹⁴ atoms cm^?2, and an activation energy of 2.5 eV.     

Alkali metal (Li, K) induced reconstructions of the W(001) surface

The adsorption of Li and K atoms on the (001) surface of tungsten is found to exhibit remarkable differences in the surface core-level shifts (SCLS) of the W 4f level and in adsorbate-induced changes of the transition temperature of the substrate surface reconstruction. Density-functional theory calculations suggest that these results reflect mainly the different bonding geometry of the adatoms, and, for example, the adsorption of potassium is largely affected by an adsorbate-induced reconstruction of the substrate (dimerization of W atoms).     

O2在Mo(001)表面吸附的第一原理研究

采用第一原理方法计算了O2分子在 Mo(001) 表面的吸附,得到了吸附构型的各种参数,并且计算了O2分子在 Mo(001) 表面4个位置（顶位,桥位,穴位垂直,穴位平行）吸附后的能量,结果表明在顶位吸附能最高。通过对O2分子在 Mo(001) 表面吸附的原子轨道电荷分布与态密度图的分析可以看出在吸附过程中主要是O原子的2p轨道电子与钼的4s和4d轨道电子的相互作用。     

In在Al(001)表面偏析的模拟

通过一种空位模型详细的描述了In在Al(001)表面的扩散偏析过程,利用周期性密度泛函理论方法计算了这个偏析过程中每步构型的能量和In原子扩散的能量壁垒,并对可能的偏析机理进行分析.结果表明:In原子从Al(001)表面第二层扩散偏析至表面层时,系统的能量降低了0.64 eV,最大的扩散迁移壁垒为0.34 eV;而从表面更内层向表面第二层扩散时系统能量基本保持不变,扩散需要克服的能量壁垒为0.65 eV,说明In原子在Al(001)表面只能由体内向表面扩散偏析.In在Al(001)的清洁表面具有强烈的偏析趋势,在热力学上是容易进行的. 关键词： 密度泛函理论 表面偏析 扩散 Al合金     

O2在Mo(001)表面吸附的第一原理研究

采用第一原理方法计算了O2分子在 Mo(001) 表面的吸附,得到了吸附构型的各种参数,并且计算了O2分子在 Mo(001) 表面4个位置（顶位,桥位,穴位垂直,穴位平行）吸附后的能量,结果表明在顶位吸附能最高。通过对O2分子在 Mo(001) 表面吸附的原子轨道电荷分布与态密度图的分析可以看出在吸附过程中主要是O原子的2p轨道电子与钼的4s和4d轨道电子的相互作用。     

Dynamic structure mediated by graphitelike Al nets on the Al2Cu (001) surface

A detailed study of the (001) surface of the Al(2)Cu crystal using both experimental and ab initio computational methods is presented in this work. The combination of both approaches gives many arguments to match the surface plane with a bulk truncated surface model terminated by incomplete Al planes. The missing rows of Al atoms lead to a 2√2×√2R 45° surface reconstruction with two domains rotated by 90° from each other. Ab initio calculations demonstrate that the energetic cost associated with the removal of pairs of Al atoms is the lowest for the two nearest surface Al atoms (covalentlike interaction). They reveal that the remaining atomic rows of various widths are oriented according to the graphitelike Al 6(3) nets used to describe the Al(2)Cu bulk structure. The surface dynamics observed at 300 K at the Al(2)Cu surface is also presented. Finally, configurational and vibrational entropies are introduced to discuss the reduced surface plane density.     

Effects of oxygen adsorption on the surface barrier structure of copper (001)

The effects of oxygen adsorption on copper (001) have been studied by surface barrier resonance spectroscopy in LEED. As a result of adsorption the Bragg peaks move to lower energies and the resonance profiles are heavily modified. A theoretical analysis of this data indicates that the surface barrier height rises by about 2 eV and the barrier origin moves about 0.2 Å further out from the copper surface as a result of oxygen adsorption.     

First-principles molecular dynamics study of acetylene adsorption on the Si(001) surface

We present a first-principles molecular dynamics study of acetylene adsorption on the Si(001) surface. Acetylene molecules are di-σ bonded to the first layer Si dimers with the adsorption energy of 64.8 kcal/mol. It is elucidated that the CC bond is essentially double bond and the Si dimer bonds are not cleaved. The normal mode analyses well reproduce the experimental results, giving a strong support to our results.     

Evidence of substrate metallization by Li adsorption on the Si(001) surface

We report an evidence of substrate metallization induced by Li adsorption on the Si(001) surface, based on the combined results of electron energy-loss (EEL) and angle-resolved photoemission (ARP) measurements. The metallic surface at a low dose of Li manifests itself as a loss peak due to an intraband surface plasmon in EEL spectra and a metallic peak in ARP spectra. These peaks are coherently understood in terms of substrate metallization, where electrons from Li adatoms partially occupy the empty substrate surface bands. Furthermore, the unique negative dispersion of the plasmon reveals that local field effects may cause such an anomalous dispersion.     

Density-functional study of methanol adsorption on the Al(100) surface

The interaction of methanol (CH₃OH) molecules with the Al(100) surface is investigated in the framework of the density-functional theory. Numerical parameters, such as the decrease in the kinetic energy, number of special points used for integration over the Brillouin zone, broadening of the filling function, and number of atomic metal layers, are determined. The density-functional theory calculations with these parameters offer reliable data on the total energy and structural optimization of the system under consideration. The geometric characteristics of a methanol molecule in both isolated and adsorbed states on the metal surface are calculated. It is shown that the electron pseudodensity at the metal surface changes in the presence of an adsorbed molecule. The influence of the orientation of the methanol molecule (with respect to the metal surface and nearest neighbor methanol molecules) on the total energy of the system is analyzed. It is found that the total energy of the system is affected by the metal deformation and the interaction of adsorbed molecules with each other.     

硫原子在镍基合金825(001)面吸附的第一性原理研究

元素硫在镍基合金表面吸附产生严重的电化学腐蚀,为从原子尺度研究硫腐蚀机理,采用第一性原理方法,构建并优化了镍基合金825的晶胞结构模型,计算分析了S原子在镍基合金825耐蚀性较差面(001)晶面的吸附及电子转移情况.结果表明:Ni原子占据顶角, Cr原子和Fe原子对称占据面心是镍基合金825稳定的晶胞结构;原子S在镍基合金825(001)面上最稳定的吸附位为四重穴位,吸附能为-6.51 eV; S吸附前后的态密度(DOS)和二维电荷差分密度图(DCD)对比发现,镍基合金825中Fe与S之间电荷偏移明显,形成离子键,易生成腐蚀产物Fe_xS_y. S的吸附对镍基合金825中Cr原子的电子分布影响不大,且合金中Cr和Ni抑制了合金中Fe与S之间的相互作用,从而提高了合金耐蚀性.     

Density functional theory investigation of carbon monoxide adsorption on the kaolinite(001) surface

Carbon monoxide(CO) is a gaseous pollutant with adverse effects on human health and the environment. Kaolinite is a natural mineral resource that can be used for different applications, including that it can also be used for retention of pollutant gases. The adsorption behavior of carbon monoxide molecules on the(001) surface of kaolinite was studied systematically by using density-functional theory and supercell models for a range coverage from 0.11 to 1.0 monolayers(ML). The CO adsorbed on the three-fold hollow, two-fold bridge, and one-fold top sites of the kaolinite(001) was tilted with respect to the surface. The strongest adsorbed site of carbon monoxide on the kaolinite(001) surface is the hollow site followed by the bridge and top site. The adsorption energy of CO decreased when increasing the coverage, thus indicating the lower stability of surface adsorption due to the repulsion of neighboring CO molecules. In addition to the adsorption structures and energetics, the lattice relaxation, the electronic density of states, and the different charge distribution have been investigated for different surface coverages.