共查询到11条相似文献,搜索用时 80 毫秒
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从修正的BGK-Blotzmann模型方程出发,引入离散速度坐标技术对气体分子速度分量进行离散降维,基于非定常时间分裂数值计算方法和无波动、无自由参数的NND耗散差分格式,发展直接求解气体分子速度分布函数的气体运动论有限差分数值格式,提出了一套能有效模拟各流域三维绕流问题的气体运动论统一算法,在分析研究气体运动论数值算法内在并行度的基础上,开展各流域三维绕流问题统一算法的HPF(高性能FORTRAN)并行化程度设计,建立一套能有效模拟各流域复杂外形体绕流的HPF并行算法软件,并进行了不同Knudsen(克努森)数下三维球体绕流及类“神舟号”返回舱外形体绕流的初步数值实验,将计算结果与过渡区有关实验数据及各流域气体绕流现象进行比较分析,证实了发展的气体运动论HPF并行算法在求解稀薄流到连续流不同流域复杂绕流问题方面的可行性。 相似文献
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用动力学方法,导出了刚性杆和滑块组成的单自由度非线性振动系统的运动微分方程;求出了杆的摆动角速度和角加速度、杆与滑块的相互作用力与杆的摆角间的关系式;给出了系统振动周期的计算公式;借助Matlab软件画出了杆与滑块的相互作用力随角坐标的变化曲线及周期随角振幅的变化曲线. 相似文献
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从粒子在行波场中的声散射出发,研究当声场中存在稀疏分布的多个粒子时粒子受到的声辐射力,并且给出了适用于声场中任意位置的粒子声辐射力计算公式。由于声辐射力为非线性力,当声场中存在多个粒子时,直接计算粒子受到的声辐射力非常复杂。结果表明,当声场中存在多个稀疏分布的粒子时,这一多粒子系统可以视为多个单独的双粒子系统的叠加,只需要分别计算各个双粒子系统的声辐射力就可以通过叠加得到声场中任意粒子的声辐射力。这一结果有助于利用声辐射力对微小粒子进行精细操控。 相似文献
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Cedric Pardanaud Celine Martin Gilles Cartry Ahmad Ahmad Loic Schiesko Gregory Giacometti Marcel Carrere Pascale Roubin 《Journal of Raman spectroscopy : JRS》2015,46(2):256-265
Graphite samples exposed to H, D and He plasma at fluencies from 1016 to 1018 cm−2 have been investigated by means of atomic force and Raman microscopies. The ion energy was varied between 40 and 800 eV, and the ion incidence was either perpendicular (Highly Oriented Pyrolitic Graphite) or parallel (carbon/carbon composite) to the basal plane. When increasing the impinging ion energy, the growth of nanometric domes at the surface has been observed by atomic force microscopy and the incident kinetic energy has been found as the parameter determining their height. Two different Raman signatures related to (1) a graphitic nano‐crystalline component similar to that of a 1014 cm−2 bombarded 1‐, 2‐ and 3‐layer graphene, and to (2) an amorphous component, have been evidenced. Polarization studies have revealed that these components are related to regions with either in‐plane or out‐of‐plane disorder, coexisting in the material. These Raman studies have also revealed that both the defect–defect distance in the first case and the aromatic domain size in the second case are typically 1 nm. When the number of vacancies created in the material increases, the number of in‐plane defects decreases to the benefit of the out‐of‐plane defects. Copyright © 2014 John Wiley & Sons, Ltd. 相似文献