半导体光放大器引起的串扰及其抑制技术

由于半导体光放大器(SOA)的增益饱和效应,在波分复用系统中.每个信道的增益受到复用的其它信道的影响.SOA引起的各信道之间的串扰严重限制了其应用.理论研究了SOA增益饱和效应引起的信道间串扰.数值模拟了多路信道复用时系统的误码率随复用信道数和光功率的变化情况,发现随着复用信道数的增加SOA增益饱和引起的信道间串扰越来越严重.对SOA中串扰的抑制方法进行了理论和实验研究.数值模拟发现连续光注入可以抑制输出功率的波动,从而减小误码率,当复用10个信道时,连续光注入可以使功率代价减小2 dB;实验验证了两信道的40 Gb/s系统中,注入连续光可以减少SOA引起的信道间串扰.     

偏分复用系统中偏振模色散补偿与偏分解复用一体化方案

本文建立了偏分复用系统中偏振模色散与信号偏振态变化引起信道串扰的数学模型, 分析了偏振模色散对偏分复用信道射频功率的影响, 并提出了适用于偏分复用系统的光域偏振模色散补偿与偏分解复用同时进行的方案: 用信道的射频功率作为反馈控制信号, 监测链路中偏振模色散和偏振态变化引起的信道串扰的大小, 用改进的粒子群优化算法对偏振控制器进行自适应控制, 同时完成偏振模色散补偿与偏分解复用. 在112 Gb/s偏分复用-差分正交相移键控(PDM-DQPSK)传输系统中仿真验证了该方案的有效性. 结果表明该方案可以使112 Gb/s-PDM-DQPSK传输系统完成自适应偏分解复用的同时, 在1 dB的光信噪比代价下, 使系统对偏振模色散的容忍度提高20 ps. 关键词： 偏分复用系统 信道串扰 偏振模色散 偏分解复用     

分立式色散补偿拉曼放大器增益特性及非线性现象研究

分立式色散补偿拉曼放大器具有兼顾色散补偿和信号放大的特点，在通信系统中展现出广阔的应用前景.对反向抽运的C波段色散补偿分立式拉曼放大器的增益谱形状，增益饱和及受激布里渊散射等特性进行了较为详细的实验研究. 关键词： 分立式色散补偿拉曼放大器 增益饱和 受激布里渊散射 斯托克斯波     

低串扰的多波长光纤光栅色散补偿器

分析了光纤光栅色散补偿系统中的串扰，并比较了几种常用的多波长光纤光栅色散补偿器的串扰特性，结合串联的窄带光纤光栅和取样光纤光栅的优点，提出一种抑制光纤光栅色散补偿系统串扰的方法.它通过在邻近信道间引入随机时延差，既能改善取样光纤光栅的线性串扰特性，又能抑制交叉相位调制效应和四波混频等非线性串扰.使用该方法可以得到具有低串扰的多波长光纤光栅色散补偿器.     

差分相移键控色散管理孤子多扰动系统的相位抖动

差分相移键控(DPSK)调制方式和色散管理孤子传输方式的结合能抵制噪声和非线性损伤,在高速(40 Gbit/s以上)多信道系统中具有突出的优点。采用变分法分析了多波长信道的放大自发辐射(ASE)噪声、信号间的非线性串扰(ISI)等多种扰动因素引起差分相移键控色散管理孤子系统的均方根相位抖动,给出了扰动的作用区域以及各扰动的大小。研究发现,放大自发辐射引起的抖动与传输距离成三次方的关系,而交叉相位调制(XPM)引起的抖动与距离近似成线性关系。通过优化选择色散管理图强度范围1.5~3.5,各种扰动得到了抑制,而以放大自发辐射扰动抑制为最大,此时要远低于交叉相位调制引起的抖动,然后分别是交叉相位调制-放大自发辐射扰动和交叉相位调制,从而波分复用系统主要来自于增加信道数这一客观限制。     

半导体激光放大器用于啁啾补偿的研究

详细分析了饱和工作状态下的行波半导体激光放大器的啁啾特性，从理论上证了实了利用其增益饱和所引起的自相位调制来对光源啁啾和光纤色散进行啁啾补偿的可行性，并且发现，对于不同脉宽的入射脉冲，光放大器均能发挥相位补偿的作用，这一特性可用来在长距离光纤传输系统中，对微弱啁光脉冲同时进行能量和相位的补偿。     

光纤传输系统中互相位调制和受激拉曼散射串扰噪声的比较研究Ⅱ--级联传输系统

在具有级联光放大器的密集波分复用强度调制一直接检测光纤系统中，导出了包含互相位调制和受激拉曼散射共同作用的强度／相位矩阵表达式。在计算强度噪声谱的基础上，研究了互相位调制和受激拉曼散射的相互耦合并用于密集波分复用系统的噪声分析。在带色散补偿的密集波分复用级联光纤传输系统中(如80信道，信道间距50GHz)，受激拉曼散射引入的串扰噪声功率可能超过互相位调制。最后，给出了密集波分复用系统分析与设计的若干建议。     

饱和放大情形下光纤参量放大器的增益和带宽特性研究

利用龙格库塔法数值求解非线性耦合方程,研究了单抽运光纤参量放大器在增益饱和区的增益谱特性.通过比较考虑抽运光损耗与忽略抽运光损耗增益谱的差别,分析了抽运光损耗对增益谱的影响.此外,给出了在饱和放大区,信号光的增益谱与光纤长度、输入信号光功率、抽运光波长与零色散波长偏离之间的关系.发现在饱和放大区,增益的整体水平有所下降,增益谱的可用带宽相对于小信号放大有所减少,增益谱在可用带宽范围内出现了旁瓣.这些结果将对工作在饱和放大区的单抽运光参量放大器的设计提供有益的帮助.     

微机械FP腔可调谐滤波器在WDM系统中的串扰分析

介绍了一种以FP谐振腔为基础,用于波分复用系统的MOEMS器件-电控可调谐FP光滤波器.器件采用微电子机械加工技术研制.研究了FP型解复用器在密集波分复用系统中引入的信道间串扰对系统的影响,并分别讨论了激光器线宽、滤波器带宽、信道间距对串扰的影响.在信道间隔为100GHz,激光器线宽为5GHz,串扰可达到-21dB左右.     

WDM网中同频串扰的研究

串扰是波分复用(WDM)光网络中限制光交叉连接(OXC)节点容量的一个重要因素.本文分析了相干和非相干串扰对通过OXC节点的光信号的影响,给出了固定和最佳判决门限两种情况下的光功率恶化,并进行了仿真计算.结果表明相干串扰对系统的影响很大.与固定判决相比,采用最佳判决可以降低串扰影响.串扰引起的光功率恶化主要取决于复用波数M,而与输入光纤数N关系不大.为了减小串扰对网络的限制,可以在OXC节点内使用滤波器.     

Comparative analysis of the effects of internal lasing oscillation and external light injection on semiconductor optical amplifier performance

One of the key differences of a semiconductor optical amplifier (SOA) with internal lasing oscillation (ILO) from a SOA with external light injection (ELI) lies in a carrier-sharing mechanism. Since the internal lasing mode shares the same pool of carriers with the signals, the carriers (or photons) withdrawn from the circulating laser mode speed up the gain recovery. On the other hand, the external light injected into the SOA shortens the carrier recovery time through optical pumping without any carrier sharing involved. To find out a better scheme, we have made a comparative investigation on the effects of the ILO and ELI on the SOA performance. It turns out by way of simulation that the ELI scheme provides faster gain recovery, shorter carrier lifetime, and higher saturation power when the external injection power is higher than the internal lasing power. The performance enhancement is not so pronounced with the carrier-sharing mechanism, as the internal lasing mode itself gives rise to severe longitudinal spatial hole burning (LSHB). Nevertheless, the ILO scheme is preferable for linear-amplification applications. We also examine the use of the ELI for low-crosstalk optical amplifiers. It is found that the ELI scheme does not bring in a very strong resonance peak in the crosstalk, which appears in a SOA with ILO due to relaxation oscillations of the lasing mode. In comparison to the ILO in SOAs, the ELI into SOAs is likely to leave more optical gain for multi-channel amplification without any sacrifice on the crosstalk.     

Minimization of Cross-Gain Saturation in Wavelength Division Multiplexing by Optimizing Differential Gain in Semiconductor Optical Amplifiers

We successfully simulated the 10 × 40 Gbit/s soliton RZ-DPSK WDM signals over 1050 km with spectral efficiency approaching 0.4 bit/s/Hz using semiconductor optical amplifiers (SOAs) as in-line amplifier. The cross-gain saturation of SOA can be minimized by settling crosstalk at a lower level by decreasing the differential gain. This decrease in differential gain is in such a way that we get nil power penalty. The maximum transmission distance of 1050 km is possible with differential gain 210 atto cm² of SOA.

The impact of amplification factor, ASE noise power, crosstalk, quality factor and bit error rate for different differential gain has been investigated. It has been shown that with the increase in differential gain of SOA, the transmission distance goes on decreasing. At high value of differential gain 2.5 × 10^-16 cm² for the transmission distance 1050 km, all channels produce inter channel crosstalk with bit error rate greater than 10^-6. But for lower differential gain 190 atto cm², the quality of all channel increases at the cost of large power penalty.

With slight increase in differential gain 200 atto cm², the maximum transmission distance observed is 4550 km with quality of received signal more than 15 dB and having nil power penalty. We observed clear eye diagrams and optical power spectra for received signal with transmission distance 1050 km and 4550 km using soliton RZ-DPSK system. The bit error rate for all channels increase more than 10^-10 with the increase in launched input power that is due to power saturation.     

Dynamics of optical pulse amplification and saturation in multiple state quantum dot semiconductor optical amplifiers

We have developed a novel analytical model, which describes the dynamic characteristics of optical pulse amplification and saturation in three state quantum dot (QD) semiconductor optical amplifiers (SOAs). The model takes into account the effect of the ground state, the excited state and the 2-dimensional wetting layer. The model is simple, accurate and fast, which makes it suitable for device design and characterization. The derived model has been utilized to study large-signal cross-gain modulation and crosstalk in multi-channel QD-SOA. Analytical expressions for large signal cross-gain modulation and crosstalk in multichannel SOA are derived. The effect of the dot relaxation/escape lifetimes and energy separation between QD states on cross-gain modulation and crosstalk are also studied. Our calculations show that by reducing QD energy state separation, via engineering the dot size and composition, one can reduce the cross-gain modulation efficiency and reduce crosstalk in multi-channel QD-SOAs.     

Time-domain simulation of channel crosstalk and inter-modulation distortion in gain-clamped semiconductor optical amplifiers

A time-domain model is implemented for gain-clamped semiconductor optical amplifiers (GC-SOAs) based on a combination of the separated traveling-wave equations and effective Bloch equations. The key feature of this model lies in its capability of handling the lasing-signal, signal-signal, and signal-noise interactions over a broad wavelength band. Therefore, various nonlinear phenomena such as the cross-gain saturation (XGS) and nondegenerate four-wave mixing (ND-FWM) can readily be captured. After being implemented and validated, this model is applied to the simulation of GC-SOA dynamic behaviors such as the channel crosstalk and intermodulation distortion (IMD). Simulation results show that the third-order IMD can be effectively suppressed by a gain-clamping lasing mode in GC-SOAs in comparison with that in conventional SOAs. The channel crosstalk can also be suppressed to some extent in GC-SOAs, but not as effectively. Other than a homogeneous reduction, the gain-clamping in GC-SOAs does not change the dependence of the channel crosstalk and IMD on the input signal power and channel spacing. It is also shown that the channel crosstalk, unlike the IMD, cannot be efficiently reduced by enlarging the channel spacing even in GC-SOAs.     

Power budget improvement for long-haul WDM transmission with optimum placement of SOAs

Sufficient power margin is investigated for ten-channels WDM transmission over 68,908 km by using cascaded in-line semiconductor optical amplifier for the differential phase-shift keying (DPSK) modulation format for the first time. For this, we used the structural optimization and placement scheme of semiconductor optical amplifiers (SOAs) for long-haul WDM transmission. The SOA model for in-line amplifier has low crosstalk, ASE noise power and low noise figure with sufficient gain. The impact of noise figure, amplification factor, ASE noise power, optical gain and crosstalk with signal input power for the SOA model has been illustrated, which shows that 400 mA is the optimum bias current.

We observed that the optimized optical filter bandwidth for the 100 GHz channel spacing is 0.4 nm. We observe that as we decrease the channel spacing, the quality of signal is degraded. We show that the optimum span scheme-1 is used up to a transmission distance of 68,908 km with good quality for power margin more than 24 dB. This placement scheme of SOAs shows good power budget for long transmission distance. We show the optical spectrum and clear eye diagram at the transmission distance of 68,908 km for optimum span schemes. Finally, we investigate the maximum transmission distance with decrease in channel spacing, i.e., 20 and 50 GHz.     

Simulation of DWDM signals using optimum span scheme with cascaded optimized semiconductor optical amplifiers

We numerically simulated the ten channels at 10 Gb/s dense wavelength division multiplexing (DWDM) transmission faithfully over 17,227 km using 70 km span of single mode fiber (SMF) and dispersion compensating fiber (DCF) using optimum span scheme at channel spacing 20 GHz. For this purpose, inline optimized semiconductor optical amplifiers (SOAs) and DPSK format are used. We optimized the SOA parameters for inline amplifier with minimum crosstalk and amplified spontaneous emission noise with sufficient gain at bias current 400 mA. For this bias current, constant gain 36.5 dB is obtained up to saturation power 21.35 mW. We have also optimized the optical phase modulator bandwidth for 400 mA current which is around 5.5 GHz with crosstalk −14.2 dB between two channels at spacing 20 GHz.We show the 10×10 Gb/s transmission over 70 km distance with inline amplifier has good signal power received as compared to without amplifier, even at equal quality factor. We further investigated the optimum span scheme for 5670 km transmission distance for 10×10 Gb/s with channel spacing 20 at 5.5 GHz optical phase modulator bandwidth. As we increase the transmission distance up to 17,227 km, there is increase in power penalty with reasonable quality.The impact of optical power received and Q factor at 5670 and 17,227 km transmission distance for different span schemes for all channels has been illustrated. For launched optical power less than saturation, all channels are obtained at bit error rate floor of 10⁻¹⁰.     

Slow and fast light in quantum-well and quantum-dot semiconductor optical amplifiersInvited Paper

Slow and fast light in quantum-well (QW) and quantum-dot (QD) semiconductor optical amplifiers (SOAs) using nonlinear quantum optical effects are presented. We demonstrate electrical and optical controls of fast light using the coherent population oscillation (CPO) and four wave mixing (FWM) in the gain regime of QW SOAs. We then consider the dependence on the wavelength and modal gain of the pump in QW SOAs. To enhance the tunable photonic delay of a single QW SOA, we explore a serial cascade of multiple amplifiers. A model for the number of QW SOAs in series with variable optical attenuation is developed and matched to the experimental data. We demonstrate the scaling law and the bandwidth control by using the serial cascade of multiple QW SOAs. Experimentally, we achieve a phase change of 160° and a scaling factor of four at 1 GHz using the cascade of four QW SOAs. Finally, we investigate CPO and FWM slow and fast light of QD SOAs. The experiment shows that the bandwidth of the time delay as a function of the modulation frequency changes in the absorption and gain regimes due to the carrier-lifetime variation. The tunable phase shift in QD SOA is compared between the ground- and first excited-state transitions with different modal gains.     

Polarization dependence of electroluminescence from closely-stacked and columnar quantum dots

Quantum dots (QDs) have a potential for application in semiconductor optical amplifiers (SOAs), due to their high saturation power related to the low differential gain, fast gain recovery and wide gain spectrum compared to quantum wells. Besides all advantages, QDs realized by Stranski-Krastanov growth mode have a flat shape which leads to a gain anisotropy and a related transverse magnetic (TM) and -electric (TE) polarization dependence as compared to bulk material. This has so far prevented their applications in SOAs. It has been suggested that control of optical polarization anisotropy of the QD can be obtained through QD shape engineering, in closely stacked or columnar QDs (CQDs). To this aim, we have fabricated and tested SOA structures based on closely-stacked and columnar QDs. Closely-stacked InAs QDs with 4, 6 and 10 nm GaAs spacer showed a minor improvement in the ratio of TM and TE integrated electroluminescence (EL) over standard QDs along with a strong reduction in efficiency. In contrast, a large improvement was obtained in CQDs, depending on the number of stacked submonolayers which can be attributed to the more symmetric shape of columnar QDs. A relatively small spectral separation (ΔE ~ 21 meV) between TE- and TM-EL peaks has been observed showing that heavy- and light hole-like states, respectively are energetically close in these QDs. These results indicate that columnar QDs have a significant potential for polarization-independent QD SOA.     

Four-wave mixing in long wavelength III-nitride QD-SOAs

Four wave mixing analysis is stated for quantum dot semiconductor optical amplifiers (QD SOAs) using the propagation equations (including nonlinear propagation contribution) coupled with the QD rate equations under the saturation assumption. Long wavelength III-nitride InN and AIInN QD SOAs are simulated. Asymmetric behavior due to linewidth enhancement factor is assigned. P-doping increases efficiency. Lossless efficiency for InAlN QDs for longer radii is obtained. Carrier heating is shown to have a considerable effect and a detuning dependence is expected at most cases. InN QD SOAs shown to have higher efficiency.