High-performance organic field-effect transistors based on pi-extended tetrathiafulvalene derivatives

Aromatic ring-condensed TTF derivatives exhibited excellent p-type FET performances in thin films. Introduction of fused benzene and pyrazine rings to the TTF skeleton was effective to enhance the intermolecular interactions and stability to oxygen. Ordered molecular alignment was confirmed by XRD studies. A pi-stacking structure was observed in the single crystal of diquinoxalinoTTF.     

Correlation between crystal structure and mobility in organic field-effect transistors based on single crystals of tetrathiafulvalene derivatives

Recently, it was reported that crystals of the organic material dithiophene-tetrathiafulvalene (DT-TTF) have a high field-effect charge carrier mobility of 1.4 cm(2)/(V x s). These crystals were formed by a simple drop-casting method, making this material interesting to investigate for possible applications in low-cost electronics. Here, organic single-crystal field-effect transistors based on materials related to DT-TTF are presented and a clear correlation between the crystal structure and the electrical characteristics is observed. The observed relationship between the mobilities in the different crystal structures is strongly corroborated by calculations of both the molecular reorganization energies and the maximum intermolecular transfer integrals. The most suitable materials described here exhibit mobilities that are among the highest reported for organic field-effect transistors and that are the highest reported for solution-processed materials.     

High performance n-type organic field-effect transistors based on pi-electronic systems with trifluoromethylphenyl groups

Novel pi-electron systems with trifluoromethylphenyl groups and/or a thiazolothiazole unit were developed as n-type semiconductors for OFETs. They showed excellent n-type performances with high electron mobilities. The trifluoromethylphenyl group was found to be very effective in inducing n-type behavior. The thiazolothiazole unit was favorable for forming stacking structures leading to efficient intermolecular pi-pi interactions.     

High performance single-crystal field-effect transistors based on twisted polyaromatic semiconductor pyreno[4,5-a]coronene

A novel p-channel semiconductor pyreno[4,5-a]coronene has been synthesized and characterized. The highly fused π-conjugated framework has a twisted geometry with an excellent on-top cofacial π-π stacking in the crystal structure and with a centroid-to-centroid distance of 3.808 ?. Single-crystal field effect transistors based on the molecule exhibit a high mobility of ~0.89 cm(2) V(-1) s(-1) and an on/off ratio of ~6 × 10(4).     

High performance organic field-effect transistors based on amphiphilic tris(phthalocyaninato) rare earth triple-decker complexes

LB films of three amphiphilic tris(phthalocyaninato) rare earth triple-decker complexes with crown-ethers as hydrophilic heads and long alkyl chains as hydrophobic tails have been prepared and found to display very well ordered layer structures, as proved by pi-A isotherms, UV-vis and polarized absorption spectra, X-ray diffraction experiments, and microscopic morphology characterization. These LB films have been fabricated into field-effect transistor (FET) devices, which show carrier mobilities as high as 0.24-0.60 cm2 V-1 s-1, among the highest mobilities achieved thus far for all LB film-based OFETs.     

Asymmetric pyrene derivatives for organic field-effect transistors

For the synthesis of an ortho-dithienylpyrene, a K-region bromination of pyrene was developed which enabled the first reported, non-statistical asymmetric functionalization of pyrene at the 4, 5, 9 and 10 positions. Crystal structures, optical and electronic properties and FET characteristics have been investigated.     

High mobility n-channel single-crystal field-effect transistors based on 5,7,12,14-tetrachloro-6,13-diazapentacene

Heteroaromatic oligomer 5,7,12,14-tetrachloro-6,13-diazapentacene (TCDAP) was characterized and assessed as n-channel material in field-effect transistor applications. A single-crystal transistor based on TCDAP as the channel material exhibits a very high electron mobility of 3.39 cm(2) V(-1) s(-1) and an on/off ratio of ～1.08 × 10(4) respectively.     

Enzyme biosensors based on ion-selective field-effect transistors

The key theoretical principles of the work on ion-selective field-effect transistor connected with their application in bioanalytical practice, some specifics of modern microtechnologies for their creation, and measurement schemes with set-ups are discussed. The achievements in the creation of enzyme biosensors based on ion-selective field-effect transistors and prospects for their application are described in detail.     

Label-free biosensors based on aptamer-modified graphene field-effect transistors

A label-free immunosensor based on an aptamer-modified graphene field-effect transistor (G-FET) is demonstrated. Immunoglobulin E (IgE) aptamers with an approximate height of 3 nm were successfully immobilized on a graphene surface, as confirmed by atomic force microscopy. The aptamer-modified G-FET showed selective electrical detection of IgE protein. From the dependence of the drain current variation on the IgE concentration, the dissociation constant was estimated to be 47 nM, indicating good affinity and the potential for G-FETs to be used in biological sensors.     

High electron mobility in ladder polymer field-effect transistors

Field-effect mobility of electrons as high as 0.1 cm2/(V s) is observed in n-channel thin film transistors fabricated from a solution spin-coated conjugated ladder polymer, poly(benzobisimidazobenzophenanthroline) (BBL), under ambient air conditions. This is the highest electron mobility observed to date in a conjugated polymer semiconductor. Comparative studies of n-channel thin film transistors made from a structurally similar nonladder conjugated polymer BBB gave an electron mobility of 10-6 cm2/(V s). These results demonstrate that electron transport can be as facile as hole transport in conjugated polymer semiconductors and that ladder architecture of a conjugated polymer can substantially enhance charge carrier mobility.     

Air-stable ambipolar field-effect transistors based on copper phthalocyanine and tetracyanoquinodimethane

The fabrication of air-stable ambipolar organic field-effect transistors with sandwich-type and bilayer architecture based on copper phthalocyanine and 7,7,8,8-tetracyanoquin odimethane is reported. In comparison with bilayer devices, the sandwich-type configuration enhances the performance and reproducibility of ambipolar devices, which is mainly ascribed to the double conductive channels in the sandwich-type structure. The measured p-channel and n-channel mobility of sandwich-type devices are comparable to that of copper phthalocyanine and 7,7,8,8-tetracyanoquinodimethane single layer devices, respectively.     

并五苯及其衍生物在有机场效应晶体管中的应用

有机场效应晶体管（organic field—effect transistors,OFETs）是以有机半导体材料作为有源层,通过电场控制电流的电子器件．与传统的无机半导体器件相比,由于其可应用于生产大面积、柔性、低成本电子设备而备受关注,在有机存储器件、有机太阳能电池、柔性平板显示和电子纸等众多领域具有潜在而广泛的应用前景．并苯类材料因其紧密的分子堆积及优异的半导体性能被广泛研究．其中,并五苯及其衍生物在场效应晶体管中表现出良好的性质,其效果甚至可以与非晶硅相媲美,但并五苯较差的溶解性及环境稳定性阻碍了其进一步应用．科研工作者通过对分子结构进行修饰改造设计,合成了一系列并五苯的衍生物,其不仅在稳定性、电学性能和溶解性方面有很大提高,还可以将该p-型半导体材料拓展到双极性及n-型半导体材料领域．本文对并五苯及其衍生物在有机场效应晶体管中的应用进行了较为全面的综述,期望对该领域的研究起到一定的推动作用．     

High yield fabrication of semiconducting thin-film field-effect transistors based on chemically functionalized single-walled carbon nanotubes

Here we report a simple and scalable method to fabricate high performance thin-film field-effect transistors(FETs) with high yield based on chemically functionalized single-walled carbon nanotubes(SWNTs) by organic radical initiators.The UV-Vis-NIR spectra,Raman spectra and electrical characterization demonstrated that metallic species in CoMoCat 65 and HiPco SWNTs could be effectively eliminated after reaction with some organic radical initiators.The effects of the substrate properties on the electrical pr...     

A facile synthesis of linear benzene-fused bis(tetrathiafulvalene) compounds and their application for organic field-effect transistors

Three new linear benzene-fused bis(tetrathiafulvalene) compounds (1-3) were easily synthesized by one-step phosphite-induced cross-coupling reactions; a solution processed organic field-effect transistor based on 2 shows high mobility of 0.02 cm2/Vs.     

Enhanced performance of field-effect transistors based on C_(60) single crystals with conjugated polyelectrolyte

Contact resistance at the interface between metal electrodes and semiconductors can significantly limit the performance of organic field-effect transistors,leading to a distinct voltage drop at the interface.Here,we demonstrate enhanced performance of n-channel field-effect transistors based on solution-grown C_(60) single-crystalline ribbons by introducing an interlayer of a conjugated polyelectrolyte(CPE) composed of poly[(9,9-bis(3'-((N,N-dimethyl)-N-ethylamnionium)-propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)]dibromide(PFN~+Br~-).The PFN~+Br~-interlayer greatly improves the charge injection.Consequently,the electron mobility is promoted up to 5.60 cm~2V~(-1) s~(-1) and the threshold voltage decreased dramatically with the minimum of4.90 V.     

Stabilization of organic field-effect transistors by tert-butyl groups in dibenzotetrathiafulvalene derivatives

For a material for organic thin-film transistors, not only high mobility but also low threshold voltage and long-term stability are important requirements. In order to realize these properties, materials with relatively large oxidation potentials, namely weak donors, have been designed as p-channel organic semiconductors. Here we propose a different strategy; transistor properties of dibenzotetrathiafulvalene (DBTTF) are significantly improved by the introduction of tert-butyl groups. Although this chemical modification does not much change the ionization potential, small threshold voltage and stability over several months are attained together with the improved mobility, probably due to some kind of passivation effect of the bulky tert-butyl groups. In contrast, the systematic fluorine substitution rapidly diminishes the transistor performance. There are two kinds of herringbone structures with much different dihedral angles of about 50° and 130°, and the tert-butyl compound falls into the former category.     

DNA sensing by field-effect transistors based on networks of carbon nanotubes

We report on the sensing mechanism of electrical detection of deoxyribonucleic acid (DNA) hybridization for Au- and Cr-contacted field effect transistors based on single-walled carbon nanotube (SWCNT) networks. Barrier height extraction via low-temperature electrical measurement provides direct evidence for the notion that the energy level alignment between electrode and SWCNTs can be affected by DNA immobilization and hybridization. The study of location-selective capping using photoresist provides comprehensive evidence that the sensing of DNA is dominated by the change in metal-SWCNT junctions rather than the channel conductance.