The effects of As and Te on the crystallization and optical gaps of selenium

Glasses with compositions Te_xSe_100−x (0x25 at.%), As_ySe_100−y (0y40 at.%) and As₂Te_zSe_98−z (0z25 at.%) were prepared. The effects of the additives As and Te on the crystallization behaviour and optical gaps of selenium were studied. The relationship between the above properties and the chemical bond nature of the glass constituents is discussed. Materials with long lifetime and high sensitivity can be obtained by the addition of certain amounts of As and Te into Se.     

Elastic properties of GexAsySe100−x−y glasses

The elastic properties of Ge_xAs_ySe_100−x−y (0x30; 10y40) glasses have been studied. The results were analyzed in terms of the dependence on the theoretical mean coordination number (mean number of covalent bonds per atom) m (m=2+(2x+y)×0.01). Three ranges of m (2.1m2.51, 2.51<m2.78, 2.78<m3) were revealed, where different dependencies of elastic moduli (Young’s modulus, shear modulus) and Poisson’s ratio of glasses on m were observed.     

Structure and properties of the pure and Pr-doped Ge25Ga5Se70 and Ge30Ga5Se65 glasses

The Ge₂₅Ga₅Se₇₀ and Ge₃₀Ga₅Se₆₅ pure and Pr³⁺-doped glasses were prepared by direct synthesis from elements and PrCl₃. It was found that up to 1 mol% PrCl₃ can be introduced in the Ge₂₅Ga₅Se₇₀ and Ge₃₀Ga₅Se₆₅ glasses. Both types of glasses with overstoichiometric and substoichiometric content of Se were homogeneous and of black color. The optical energy gap is E^opt_g=2.10 eV, and the glass transition temperature is T_g=543 K for Ge₂₅Ga₅Se₇₀ and T_g=633 K for Ge₃₀Ga₅Se₆₅. The long-wavelength absorption edge is near 14 μm and it corresponds to multiphonon processes. Doping by Pr³⁺ ions creates absorption bands in transmission spectra, which can be assigned to the electron transitions from the ground ³H₄ level to the higher energy levels of Pr³⁺ ions ³H₅, ³H₆, ³F₂, ³F₃ and ³F₄, respectively. By excitation with YAG:Nd laser line (1064 nm), two intense luminescence bands (1343 and 1601 nm) were excited. The first band can be ascribed to electron transitions between ¹G₄ and ³H₅ energy levels of Pr³⁺ ions. Full width at half of maximum (FWHM) of the intensity of luminescence was found to be 70 nm for (Ge₂₅Ga₅Se₇₀)_1 − x(PrCl₃)_x and (Ge₃₀Ga₅Se₆₅)_1 − x(PrCl₃)_x glasses. The FWHM in selenide glasses is lower than in halide and sulphide glasses. The second luminescence band (1601 nm) can be probably ascribed to the transitions between ³F₃ and ³H₄ energy levels of Pr³⁺ ions. The absorption and luminescence spectra of Pr³⁺ ions in studied glasses are slightly influenced by stoichiometry of glassy matrix. The Raman spectra of studied glasses were deconvoluted and assignment of Raman bands to individual vibration modes of basic structural units was suggested. The structure of studied glasses is mainly formed by corner-sharing and edge-sharing GeSe₄ tetrahedra. The vibration modes of Ga-containing structural units were not found, they are apparently overlapping with Ge-containing structural units due to small difference between atomic weights of Ge and Ga. In the glasses with substoichiometry of Se, the Ge–Ge bonds of Ge₂Se₆ structural units were found. In Se-rich glasses the Se–Se vibration modes were found. In all studied glasses also ‘wrong' bonds between like atoms were found in small amounts. Maximum phonon energy of studied glasses is 320 cm⁻¹.     

Phase relations around langasite (La3Ga5SiO14) in the system La2O3–Ga2O3–SiO2 in air

Phase relations around langasite (LGS, La₃Ga₅SiO₁₄) were studied on the basis of phase assemblage observed during calcination and crystallization process of samples of various compositions in the ternary system La₂O₃–Ga₂O₃–SiO₂. A ternary compound of apatite structure, La₁₄Ga_xSi_9–xO_39–x/2 was found for the first time. Crystallization of this compound was observed in the cooling process of molten samples of stoichiometric LGS as well as LGS single crystal, demonstrating that LGS is an incongruent-melting compound. A phase diagram was established primarily based on the crystallization sequence in the cooling process.     

XAS study of lanthanum coordination environments in glasses of the system K2O---SiO2---La2O3

The La L₁ and L₃ XANES and L₃ EXAFS have been investigated for the series of glasses 10K₂O---50SiO₂---x La₂O₃ (x = 1, 5, 10) and (10 − x)K₂O---40SiO₂−(x/3)La₂O₃ (x = 7.5, 5, 2.5) and model compounds La₂O₃, LaAlO₃, LaPO₄, La₂NiO₄, La₂CuO₄ and La(OH)₃. An edge resonance at 25 eV above the L₁ edge in the glass spectra is concentration-dependent, decreasing in intensity with increasing lanthanum concentration. The 2s → nd forbidden transition increases with La₂O₃ concentration, indicating a reduction in the ‘average’ site symmetry of the first coordination shell of La. Mapping _X(k) space, which is a new and promising technique, was employed to extract bond distance, coordination number and thermal parameters from the EXAFS. By this method, one calculates the complete _X(k) space a function of all physically reasonable values of the adjusted parameters in all possible combinations. The advantage in this method is the assurance of a global minimum. Bond lengths were comparable to those obtained by Fourier transforming the phase corrected EXAFS. The values are 2.42 Å (± 0.03 Å) for La---O. The coordination numbers (N ≤ 7 ± 1.5) were derived by mapping and comparison to the published structures for other La compounds. _X(k) mapping is compared with least-squares fitting the data, and the correlation between the Debye-Waller factor and coordination number is also discussed.     

Electronic traps in mixed Si1−xGexO2 films

Thermally stimulated luminescence (TSL) and infrared (IR) spectroscopy were measured in plasma grown Si_1−xGe_xO₂ (x=0, 0.08, 0.15, 0.25, 0.5) with different thicknesses (12–40 nm). A comparison with the TSL properties of thermally grown SiO₂ and GeO₂ was also performed. A main IR absorption structure was detected, due to the superposition of the peaks related to the asymmetric O stretching modes of (i) Si–O–Si (at ≈1060 cm⁻¹) and (ii) Si–O–Ge (at 1001 cm⁻¹). Another peak at ≈860 cm⁻¹ was observed only for Ge concentrations, x>0.15, corresponding to the asymmetric O stretching mode in Ge–O–Ge bonds. A TSL peak was observed at 70°C, and a smaller structure at around 200°C. The 70°C peak was more intense in all Ge rich layers than in plasma grown SiO₂. Based on the thickness dependence of the signal intensity we propose that at Ge concentrations 0.25x0.5 TSL active defects are localised at interfacial regions (oxide/semiconductor, Ge poor/Ge rich internal interface, oxide external surface/atmosphere). Based on similarities between TSL glow curves in plasma grown Si_1−xGe_xO₂, thermally grown GeO₂ and SiO₂ we propose that oxygen vacancy related defects are trapping states in Si_1−xGe_xO₂ and GeO₂.     

Wavelength selective materials modification of bulk As2S3 and As2Se3 by free electron laser irradiation

In this study we report first measurements of wavelength-selective infrared-induced materials modification of bulk As₂S₃ and As₂Se₃. These materials are currently being considered as candidate materials for infrared optical fiber transmission in the range of 1–10 μm. Our study is aimed at modifying oxygen, hydrogen and carbon impurities bound to chalcogenide constituent elements in the materials to reduce absorption. Tunable infrared radiation from the W.M. Keck Free Electron Laser (FEL) at Vanderbilt was used to excite specific vibrational modes, S–O–H and CH_x modes in bulk As₂S₃ and Se–H, CH_x and S–H₂ modes in bulk As₂Se₃. Changes in vibrational mode amplitudes are monitored by measuring the intensity of the Fourier transform infrared (FTIR) spectra before and after irradiation at appropriate wavelengths. By tuning wavelengths to hydrogen vibrational modes, we find evidence that hydrogen is released and/or redistributed athermally. In particular, following irradiation at specific resonant wavelengths, vibrational mode amplitudes as monitored by FTIR associated with CH_x are significantly reduced in bulk As₂S₃ and As₂Se₃ samples. In As₂S₃, the changes in CH_x modes are reversed by heat treatment at 115°C for 35 min in nitrogen atmosphere.     

Physical properties of amorphous Ge20Sb25−xBixSe55 thin films

The influence of substitution of Sb atoms by Bi atoms on the electrical and optical properties of thin films of the Ge₂₀Sb_25−xBi_xSe₅₅ [0x15] system are reported. Results of dc conductivity and thermoelectric power measurements between 150 and 450 K show that the Ge---Sb---Se system is chemically modified by addition of large concentrations of Bi atoms between X=5 and X=10 at.%). A transition from p-type for Sb-doped to n-type for Bi-doped films and a decrease of resistivity is observed. The absorption edge shifts to shorter wavelength, thereby decreasing the optical band gap of the system. Compositional dependences of electrical conductivity, thermoelectric power, and the appearance of n-type conduction are discussed from the stand point of chemical bonds formed in the films and related to the defect states produced due to incorporation of Bi atoms in high concentrations. The coexistence of band and hopping conduction is proposed. The ac conductivity in 0.1–10.0 kHz frequency and 150–450 K temperature range was found to obey a power law σ(ω, T) = Aω^s. The results were interpreted in terms of Elliott's theory, which assumes correlated barrier hopping (CBH) between the charged defect centres. It was found that computed results from the CBH model and experimental one are qualitative agreement for the present materials.     

The structure of liquid Sb---Se alloys

The structure of liquid Sb_1-xSe_x alloys with x = 0.5, 0.6 and 0.7 was investigated in the temperature range of 600–800°C. The neutron diffraction measurements were carried out by using the high intensity total (HIT) scattering spectrometer of the booster synchrotron utilization facility (BSF) at the National Laboratory for High Energy Physics. A prepeak is observed in the structure factor for these three alloys. It suggests that the medium-range order stillo remains melting for liquid Sb_1-xSe_x alloys, with x = 0.5, 0.6 and 0.7. The structure factor liquid Sb₂Se₃ alloys shows no appreciable temperature variation. For liquid Sb_0.5Se_0.5 alloy, the intensity of the prepeak exhibits an apparent decrease in the temperature range in which the non-metal-metal transition occurs. The non-metal-metal transition in liquid Sb---Se alloys is due to the change in the medium range structure.     

Compositional dependence of the optical gap in Ge1−xSx, Ge40−xSbxS60 and (As2S3)x(Sb2S3)1−x non-crystalline systems

An attempt is made to calculate the compositional dependence of the optical gap (E_g) in Ge_1−xS_x, Ge_40−xSb_xS₆₀ and (As₂S₃)_x(Sb₂S₃)_1−x non-crystalline systems in an alloy-like approach. From the comparison of both the experimental dependence of E_g and the calculated ones using the Shimakawa relation [E_{g AB} = YE_{g A} + (1−Y)E_{g B}] it is assumed that this equation is useful for such systems or parts of the systems which behave like almost ideal solutions.     

Raman spectra of Ag- and Cu-photo-doped As40S60−xSex films

Raman spectra of the chalcogenide vitreous layers (As₄₀S₆₀, As₄₀S₄₀Se₂₀, As₄₀S₂₀Se₄₀, As₄₀Se₆₀) non-doped and photo-doped by Ag, Cu were measured. The spectra were analyzed in terms of a molecular model. It was ascertained that, for the spectra of photo-doped As₄₀S_60−xSe_x layers, the shift of the main bands to the high frequency side and the appearance of the additional scattering bands in the low frequency spectral range are characteristic features. Variations in the Raman spectra with photodoping by Ag or Cu are consistent with the supposition concerning normal covalent and coordinative bond formation between metal additives and chalcogen atoms, which results in the different activation energy values for the silver photo-stimulated diffusion into chalcogenide layers.     

Indium content determination related with structural and optical properties of InGaN layers

We studied the structural and optical properties of a set of nominally undoped epitaxial single layers of In_xGa_1−xN (0<x0.2) grown by MOCVD on top of GaN/Al₂O₃ substrates. A comparison of composition values obtained for thin (tens of nanometers) and thick (≈0.5 μm) layers by different analytical methods was performed. It is shown that the indium mole fraction determined by X-ray diffraction, measuring only one lattice parameter strongly depend on the assumptions made about strain, usually full relaxation or pseudomorphic growth. The results attained under such approximations are compared with the value of indium content derived from Rutherford backscattering spectrometry (RBS). It is shown that significant inaccuracies may arise when strain in In_xGa_1−xN/GaN heterostructures is not properly taken into account. Interpretation of these findings, together with the different criteria used to define the optical bandgap of In_xGa_1−xN layers, may explain the wide dispersion of bowing parameters found in the literature. Our results indicate a linear, E_g(x)=3.42−3.86x eV (x0.2), “anomalous” dependence of the optical bandgap at room temperature with In content for In_xGa_1−xN single layers.     

A glass-forming system with compound-forming tendency: As4S6---P4S10

Glasses in the quasi-binary system (As₄S₆)_x(P₄S₁₀)_1−x x = 0.1, …, 1.0, are produced and studied by thermal analysis, X-ray, and Raman spectroscopy. The phase diagram of the system and the critical cooling rate for glass formation both have their maximum at x = 0.5, corresponding to the compound As₂P₂S₈; the X-ray structure of recrystallized samples can be described as a sum of the As₂P₂S₈ (x = 0.5)- and the P₄S₁₀-structure (As₄S₆ not visible); Raman spectra of the glasses are again sums of As₂P₂S₈- and As₄S₆/P₄S₁₀-spectra. All these observations support the assumption that a stable building block corresponding to the 1:1 compound As₂P₂S₈ and surplus As₄S₆ (or P₄₁₀) are the essential elements of the structure in the glasses.     

Low-temperature growth of epitaxial layers of ZnSe1−xTex solid solutions

The layers of ZnSe_1−xTe_x (0 < x < 1.0) solid solutions have been grown by liquid-phase epitaxy in a closed tube at 620–680 °C. Zinc chloride served as a solvent. ZnTe and ZnSe crystals were used as sources and substrates with orienting surfaces (110) and (111) for ZnSe and (110) for ZnTe. The composition of the grown layer was specified by the relative content of the ZnSe and the ZnTe in the solution and was controlled by X-ray analysis. The position of the exciton bands in the photoluminescence spectra of ZnSe_1−xTe_x over the interval 0.3 < x < 1.0 is in agreement with the free exciton energies calculated for these compositions. Relatively low-ohmic (of about 10² Ω cm) epitaxial layers of ZnSe_1−xTe_x solid solutions were grown.     

Photoluminescence excitation spectroscopy of GaP1−xNx alloys: conduction-band-edge formation by nitrogen incorporation

We have investigated the conduction-band-edge formation in GaP_1−xN_x alloys by nitrogen incorporation into GaP using photoluminescence excitation (PLE) spectroscopy. The PLE spectra of GaP_1−xN_x alloys with various nitrogen concentrations show that the absorption edge shifts to lower energies with increasing nitrogen concentration. From the nitrogen concentration dependence of the absorption edge energy we found that the conduction-band-edge formation in GaP_1−xN_x alloys originates from the formation of the A line.     

Atomic structure of Al55(Cr1−xMnx)15Si30 metallic glasses observed by neutron diffraction

An atomic structure of Al₅₅(Cr_1−xMn_x)₁₅Si₃₀ (x = 0, 0.49,1) metallic glasses was studied by neutron diffraction. An advantage of the neutron diffraction technique was fully exploited by utilizing the negative scattering length of Mn to form a neutron zero scattering ‘alloy’ for the component Cr_0.51Mn_0.49 in this quaternary Al---(Cr, Mn)---Si alloy. This allows the atomic distribution of the resulting quasibinary Al---Si metallic glass to be derived directly. Moreover, the (Al, Si)---TM (TM = Mn, Cr) and TM---TM pair correlations were also extracted by taking appropriate linear combinations of the atomic structures for the Al₅₅(Cr_1−xMn_x)₁₅Si₃₀ (x = 0, 0.49, 1) metallic glasses. A sharp first peak in the (Al,Si) ---TM pair correlations thus obtained led to the conclusion that a strong attractive interaction exists between (Al, Si) and TM atoms and, hence, that the presence of the TM atoms is responsible for the formation of an amorphous phase.     

Characteristic crystal growth from amorphous WO3 film by vacuum heating

Selective growth of WO₂, W and WO_3−x crystals from amorphous WO₃ film by vacuum heating at 400–900°C was clarified. The grown WO_3−x crystals were incommensurate structure based on crystallographic share structure. The growth process of WO₂ crystal in the amorphous film was directly observed at high temperature in the electron microscope. The growth front of the WO₂ crystal consumes WO₃ microcrystallites with various orientations. The growth speed of the WO₂ depended on WO₃ microcrystallites orientation. The origin of the wavy growth front of WO₂ was due to an orientation dependence of the WO₃ microcrystallites.     

Solubility of YBa2Cu3O7−δ and Nd1+xBa2−xCu3O7±δ in the BaO/CuO flux

The knowledge of the phase relations and solubilities in the Y–Ba–Cu–O and Nd–Ba–Cu–O systems are of fundamental importance for crystal growth and liquid-phase epitaxy of YBa₂Cu₃O_7−δ (YBCO) and Nd_1+xBa_2−xCu₃O_7±δ (NdBCO). The determination of the solubility curve of YBCO and NdBCO in a BaO/CuO flux containing 31 mol% BaO was done by observation of the formation and dissolution of crystals on the surface of the high-temperature solution. The heat of the solution of YBCO at 1000°C was found to be 34.7 kcal/mol, and for NdBCO at 1060°C, it was found to be 28.1 kcal/mol. The determination of the solubility curves requires special care, and the problems of the time-dependent shift of the solution composition due to the corrosion of the crucible is discussed. The scatter of the solubility data published by different authors could be due to the use of solutions with different Ba : Cu ratios, different determination methods, i.e. different crystallization mechanisms, different crucibles and starting chemicals.     

High carbon doping of Ga1−xInxAs (x≈0.01) grown by molecular beam epitaxy

We have grown layers of Ga_1−xIn_xAs:C (x ≈ 0.01) on (100) GaAs by molecular beam epitaxy. As C source a graphite filament was used. Structures coherent with the substrate were obtained by adjusting properly the In and C concentrations. With simultaneous incorporation of In and C the strain is compensated and, consequently, the defect density is reduced. A maximum hole concentration value of p = 6×10¹⁹ cm⁻³ was achieved, which is twice higher than the saturation value of C doping of GaAs produced under the same conditions. There is evidence that this value is not in the saturation limit. The product of the hole density times the mobility increases, so the resistance decreases with higher C doping. Raman spectra show that the C_As peak broadens and shifts to lower frequencies for increasing concentration of indium. In H-passivated samples, Raman spectroscopy shows that C_As is surrounded by Ga atoms only. Indium atoms are thus present only in the second group III shell.     

Electronic conduction in vitreous semiconductors in the pseudo-binary system (As2S3)1-x(PbS)x

AC conductivity and dielectric relaxation measurements of the bulk amorphous compositions in the pseudo-binary system (As₂S₃)_1-x(PbS)_x (x = 0, 0.1, 0.4 and 0.5) in the frequency range 500 Hz-10 kHz and in the temperature span 180–450 K are reported. The temperature dependence of the ac conductivity, σ_ac(ω), has a broad structure at all frequencies in compositions with x = 0.1, 0.4 and 0.5 whose peak position is not thermally activated. A similar structure was also observed in the data on the dielectric constant, ε₁, which peaked at a frequency of 1 kHz in the composition with x = 0.5. Analysis of the results using the correlated barrier hopping model revealed that the electronic conduction takes place by single polaron and bipolaron hopping processes at high and low temperatures, respectively, in compositions containing Pb. The microstructure and phase-separation in the glasses containing Pb influence the electrical transport and dielectric dispersion. This study has revealed the possible presence of a phase transformation at around 300 K at a frequency of 1 kHz in the dielectric dispersion behaviour of composition with x = 0.5.