Spin crossover compounds are considered to be a viable alternative for creating display, memory and switching devices due to the bistability of their magnetic, optical, mechanical and electrical properties. This Letter presents the study of the dielectric and transport properties of the [Fe(Htrz)2(trz)](BF4) (Htrz = 1H‐1,2,4‐triazole) complex in a wide temperature and frequency range. Our results reveal a singular behavior of the dielectric modulus upon the spin transition in conjunction with the switching of the conductivity between the high spin and low spin states.
We report the fabrication procedure and the characterization of an Al0.3Ga0.7As solar cell containing high‐density GaAs strain‐free quantum dots grown by droplet epitaxy. The production of photocurrent when two sub‐bandgap energy photons are absorbed simultaneously is demonstrated. The high quality of the quantum dot/barrier pair, allowed by the high quality of nanostructured strain‐free materials, opens new opportunities for quantum dot based solar cells.
Heteroepitaxial growth of kesterite Cu2ZnSnS4 (CZTS) thin film on cubic ZnS(100) single crystal substrate was achieved by radio frequency magnetron sputtering from a single CZTS target. An optimal substrate temperature in the range of 470–500 °C is found suitable for this epitaxial growth. The growth of CZTS was confirmed to be along a‐axis. The sputtered CZTS thin film is homogeneous throughout the whole film. The band gap of the film is found to be approximately 1.51 eV, i.e., promising for high efficiency thin film solar cells.
We demonstrate the self‐catalyst growth of vertically aligned InAs nanowires on bare Si(111) by droplet epitaxy. The growth conditions of indium droplets suitable for nucleation and growth of nanowires have been identified. We have then realized vertically aligned and non‐tapered InAs nanowires on bare Si(111) substrates through optimal indium droplets. It was found that the lateral dimensions and density of nano‐wires are defined by the indium droplets. This technique unravels a controllable, cost‐effective and time‐efficient route to fabricating functional monolithic hybrid structures of InAs nanowires on silicon.
Ordered Sr2CrReO6 has been synthesized recently. It is measured to be ferrimagnetic semiconductor, in contrary to the previous reports of metallic properties. To solve the discrepancy, we have investigated the compound by using the density functional theory. The semiconducting behavior is reproduced by including the electron correlation and spin–orbit coupling simultaneously. The calculated band gap is 0.22 eV, close to the experimental value of 0.21 eV. A large orbital moment of 0.69µB is found for Re, which is caused by the Coulomb‐enhanced spin–orbit coupling. By applying pressure, a semiconductor to half‐metal transition is observed through 5% volume compression.
The Fe3O4(111)/graphene/Ni(111) trilayer is proposed to be used as an ideal spin‐filtering sandwich where the half‐metallic properties of magnetite are used. Thin magnetite layers on graphene/Ni(111) were prepared via successive oxidation of a thin iron layer predeposited on graphene/Ni(111) and the formed system was investigated by means of low‐energy electron diffraction and photoelectron spectroscopy. The electronic structure and structural quality of the graphene film sandwiched between two ferromagnetic layers remain unchanged upon magnetite formation as confirmed by experimental data.
Graphene, the two‐dimensional form of carbon presents outstanding electronic and transport properties. This gives hope for the development of applications in nanoelectronics. However, for industrial purpose, graphene has to be supported by a substrate. We focus here on the graphene‐on‐SiC system to discuss how the SiC substrate interacts with the graphene layer and to show the effect of the interface on graphene atomic and electronic structures.
We present experimental and theoretical evidence of the role played by the spin–orbit coupling in the electronic structure of a pseudomorphic Au monolayer on Nb(001) substrate. The bands found with the help of the angle‐resolved ultraviolet photoelectron spectroscopy (ARUPS) are compared with those obtained from ab initio self‐consistent calculations by the VASP and WIEN2k codes. The slab calculations are performed including geometric relaxation and using both the generalized‐gradient (GGA) and local‐density (LDA) approximations for the exchange–correlation energy. The dispersions and energy positions of the calculated bands agree with the experimentally determined band structure only if the LDA is used and the spin–orbit coupling is included. Therefore, both the structure relaxation and spin–orbit coupling are essential in understanding the electronic structure of the Au/Nb(001) system.
The transport properties of the junction assembled by zigzag graphene nanoribbons (ZGNRs) and Au electrode (Au/ZGNR) are investigated using first‐principles calculations. It is found that the Au/ZGNR junction behaves as a typical diode with Schottky barrier at the contact. Our results indicate that although the oxidization at the contact slightly influences the Schottky barrier, the I –V characteristic is effectively modulated. Such effect derives from the impact of the oxidization on the coupling between the ZGNRs and Au electrode.
Angle‐resolved photoemission spectroscopy (ARPES) and X‐ray photoemission spectroscopy have been used to characterise epitaxially ordered graphene grown on copper foil by low‐pressure chemical vapour deposition. A short vacuum anneal to 200 °C allows observation of ordered low energy electron diffraction patterns. High quality Dirac cones are measured in ARPES with the Dirac point at the Fermi level (undoped graphene). Annealing above 300 °C produces n‐type doping in the graphene with up to 350 meV shift in Fermi level, and opens a band gap of around 100 meV.
Optically transparent and high‐quality hybrid ZnO nanoparticle and anthracene embedded polyphenylsiloxane (PPS) glass films were spin‐coated on quartz substrates. A strong Förster resonant energy transfer (FRET) process was indicated by the observation of quenching of the ZnO emission and an enhancement of the anthracene emission at room temperature. The efficiency of this energy transfer between ZnO and the S1 vibronic states of the anthracene molecules can be optimized to exceed 90%.
By means of first‐principles calculations we predict the stability of silicene as buckled honeycomb lattice on passivated substrates of group‐IV(111)1 × 1 surfaces. The weak van‐der‐Waals interaction between silicene and substrates does not destroy its linear bands forming Dirac cones at the Brillouin zone corners. Only very small fundamental gaps are opened around the Fermi level.
By performing density functional theory calculations, we studied the quantum confinement in charged graphene quantum dots (GQDs), which is found to be clearly edge and shape dependent. It is found that the excess charges have a large distribution at the edges of the GQD. The resulting energy spectrum shift is very nonuniform and hence the Coulomb diamonds in the charge stability diagram vary irregularly, in good agreement with the observed nonperiodic Coulomb blockade oscillation. We also illustrate that the level statistics of the GQDs can be described by a Gaussian distribution, as predicted for chaotic Dirac billiards.
The BOSCO solar cell represents a bifacial structure with double‐sided collection. The structure allows the use of standard module interconnection technology and favours the use of material with low to medium diffusion length and low resistivity for maximum benefit towards other structures, such as Al‐BSF and PERC. Within this work, we present first results on different multicrystalline silicon materials yielding a monofacial efficiency of 17.4% on large‐area wafers from block‐cast mc‐Si. This value represents a gain of ～0.7%abs compared to Al‐BSF cells processed in parallel. The applicability for bifacial operation is demonstrated by a significantly increased quantum efficiency for rear side illumination. These results make the BOSCO solar cell concept a promising candidate to further boost the output of utility‐scale PV plants even when using low‐cost wafers of low to medium diffusion length material.
InGaN/GaN light‐emitting diodes (LEDs) are known to exhibit a strongly non‐uniform vertical carrier distribution within the multi‐quantum well (MQW) active region. We propose to eliminate “dark” quantum wells by insertion of multiple tunnel junctions into the MQW which allow for the repeated use of electrons and holes for photon generation. In good agreement with available measurements, we demonstrate by self‐consistent numerical simulation that such tunnel junction LED design promises quantum efficiencies as high as 250% as well as a strongly enhanced output power at high input power, compared to conventional LED concepts.
We report a very simple and novel approach to produce anodic TiO2 nanotube arrays with highly defined and ordered tube openings. It is based on carrying out anodization through a slowly soluble photoresist coating. This eliminates the formation of undesired initiation layers on the tube tops and protects them to a certain extent from etching by the electrolyte.
We report on solution‐processible polymer solar cells (PSCs) fabricated on a papery substrate using carton. Highly conductive PEDOT:PSS was used as a bottom anode and planarization layer, and a semi‐transparent top cathode was applied. This research could be an important approach to the development of all‐solution‐processible papery PSCs as well as paper electronics.
Steady‐state and time‐resolved photoluminescence of silicon nanoparticles dispersed in low‐polar liquids at above room temperature is studied. The roles of low‐polar liquids as well as mechanisms responsible for their temperature‐dependent photoluminescence are discussed. The thermal sensitivity of the photoluminescence is estimated and application of the nanoparticles as nanothermometers is proposed.
The possibility of multiferroicity arising from charge ordering in LuFe2O4 and structurally related rare earth ferrites is reviewed. Recent experimental work on macroscopic indications of ferroelectricity and microscopic determination of coupled spin and charge order indicates that this scenario does not hold. Understanding the origin of the experimentally observed charge and spin order will require further theoretical work. Other aspects of recent research in these materials, such as geometrical frustration effects, possible electric‐field‐induced transitions, or orbital order are also briefly treated.
