An original approach is proposed to study the magnetic phase separation phenomenon. It is based on the registration of the noise‐like FMR Fine Structure (FMR FS) caused by the magnetic interparticle dipole–dipole interaction between spatially separated ferromagnetic regions. Data obtained for a La0.7Pb0.3MnO3 single crystal point to the existence of spatially separated ferromagnetic regions. It is shown that FMR FS of the La0.7Pb0.3MnO3 single crystal is temperature reversible and disappears at the maximum of magnetoresistance.
Epitaxial thin films of ferromagnetic La0.7Sr0.3MnO3 (LSMO) and charge‐ordered, antiferromagnetic Y0.5Ca0.5MnO3 (YCMO) were deposited on SrTiO3 (100) substrates by pulsed laser deposition (PLD). The heterostructure undergoes tetragonal distortion due to strong biaxial tensile strain imposed by the substrate. The LSMO–YCMO bilayers exhibit significant exchange bias (EB) across the interface even in a very small remnant magnetic field (～5 Oe) present in the superconductor magnet. The unidirectional exchange anisotropy at the interface can be switched by reversing the polarity of the remnant magnetic field.
The multiferroic Pb(Fe1/2V1/2)O3 (PFV) bulk ceramic was fabricated by a conventional ceramic sintering method. The strong visible‐light photovoltaic effect in Sn‐doped‐In2O3(ITO)/PFV/ITO structure capacitor was observed. The open‐circuit voltage was up to ～0.7 V, which was much higher than the value (～0.3 V) in BiFeO3 film. The photo‐excited electric current is almost proportional to the incident light illumination intensity. The good visible‐light photovoltaic makes PFV ceramic a potential candidate for practical application in solar cell devices.
We report the fabrication procedure and the characterization of an Al0.3Ga0.7As solar cell containing high‐density GaAs strain‐free quantum dots grown by droplet epitaxy. The production of photocurrent when two sub‐bandgap energy photons are absorbed simultaneously is demonstrated. The high quality of the quantum dot/barrier pair, allowed by the high quality of nanostructured strain‐free materials, opens new opportunities for quantum dot based solar cells.
Bulk polycrystalline La0.8Li0.2MnO3 is found to switch between a low‐resistance state and a high‐resistance state on thermal cycling. The low‐temperature, high‐resistance state exhibits strong electroresistance whereas the high‐temperature, low‐resistance state does not. The change in resistance between the two distinct states is of two orders of magnitude. It is proposed that the observed metastability may serve as the basis for resistive thermal‐switching devices.
We show, using Density Functional Theory (DFT) calculations, that compressed AgF2 should turn above 17 GPa into a layered narrow‐gap material with a huge intralayer antiferromagnetic (AFM) coupling constant, reminiscent of those seen for parent copper (II) oxides (e.g., La2CuO4). Compressed AgF2 is thus the first candidate for the non‐oxocuprate two‐dimensional antiferromagnet. Calculations indicate that AgF2 could subsequently be metallised above 38 GPa, likely giving rise to superconductivity (SC).
In this study, we report a low power Ni/GeOx /TiOy /TaN resistive random access memory (RRAM) using plasma‐modified electrode. The low sub‐mA switching current, highly uniform switching cycles (only 4% variation for the set) and good high‐temperature current distribution at 125 °C are simultaneously achieved in this RRAM device. Such good performance can be ascribed to interface plasma treatment on TaN electrode where the resulting Ta–N ionic bond increases the oxidation resistance and reduces the oxygen vacancy concentration near TaN interface that is favorable to lower switching power and improve high‐temperature current distribution.
The superconducting current induced by the penetration of the long-range triplet component of superconducting correlations into a composite ferromagnetic interlayer has been detected in mesa-heterostructures based on oxide cuprate superconductors YBa2Cu3O7 ? δ and Au/Nb bilayer films with the composite oxide interlayer that is made of ferromagnetic films of manganite La0.7Sr0.3MnO3 and ruthenate SrRuO3 and has a thickness much larger than the length of correlations determined by the exchange field. The deviation of the superconducting current in the mesa-heterostructure with the fraction of the second harmonic of 13% from a sinusoidal current-phase relation has been detected; this deviation can also be due to the generation of the triplet component of superconducting correlations in the ferromagnet. 相似文献
The crystallization process of mechanically alloyed Fe75Zr25 metallic glasses is investigated by means of both thermo‐magnetization and in situ neutron powder thermo‐diffraction experiments in the temperature range 300–1073 K. It was found that the crystallization takes place in a two‐step process, involving firstly the appearance of metastable Fe and Fe2Zr crystalline phases between 880 K and 980 K, and a subsequent polymorphic transformation into Fe3Zr above 980 K. These findings explain the anomalous magnetization vs. temperature behaviour on heating–cooling cycles.
We study graphene growth on hafnia (HfO2) nanoparticles by chemical vapour deposition using optical microscopy, high resolution transmission electron microscopy and Raman spectroscopy. We find that monoclinic HfO2 nanoparticles neither reduce to a metal nor form a carbide while nucleating nanometer domain‐sized few layer graphene. Hence we regard this as an interesting non‐metallic catalyst model system with the potential to explore graphene growth directly on a (high‐k) dielectric.
Light‐induced degradation of charge carrier lifetime was observed in indium‐doped silicon. After defect formation, an annealing step at 200 °C for 10 min deactivates the defect and the initial charge carrier lifetime is fully recovered. The observed time range of the defect kinetics is similar to the well known defect kinetics of the light‐induced degradation in boron‐doped samples. Differences between defect formation in boron‐ and indium‐doped silicon are detected and discussed. A new model based on an acceptor self‐interstitial ASi–Sii defect is proposed and established with experimental findings and existing ab‐initio simulations.
We demonstrate by a Monte Carlo simulation that the reflection of quasi‐ballistically accelerated electrons at the interfaces of an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As double‐heterojunction structure is able to generate current oscillations at frequencies in the THz range. The possibility of taking advantage of this mechanism to generate THz signals has been demonstrated in structures with well dimension close to the electron ballistic transport length in In0.53Ga0.47As.
We report enhanced anomalous photovoltaic effects and switchable photovoltage generation in pure and Pr–Cr co‐doped BiFeO3 (BFO) nanotubes (NTs). Influence of metal doping on short circuit current, open circuit voltage, power conversion efficiency and fill factor are investigated. The power conversion efficiency of pure BFO NTs (～0.207%) is found to be enhanced by several orders of magnitude in comparison with the reported bulk effect. Pr‐doped NTs provide highest values of power conversion efficiency (～0.5%).
Polymer nanocomposites containing different concentrations of Au nanoparticles have been investigated by small angle X‐ray scattering and electronic absorption spectroscopy. The variation in the surface plasmon resonance (SPR) band of Au nanoparticles with concentration is described by a scaling law. The variation in the plasmon band of ReO3 nanoparticles embedded in polymers also follows a similar scaling law.
Monte‐Carlo simulations predict that a local correlated disorder is responsible for many of the novel transport and magnetic properties of colossal magnetoresistance (CMR) materials such as manganites. One important prediction of these models is that the resistivity at the metal–insulator transition (MIT) in manganites depends strongly on the correlated quenched disorder. However, experimental confirmation has been challenging since it is difficult to control the amount of disorder in these compounds. We carried out experiments on Sm0.55Sr0.45MnO3, a prototypical CMR manganite with a sharp MIT, whereby the oxygen‐related disorder is systematically enhanced by low temperature thermal activation. We observe dramatic changes in the temperature dependence of resistivity at the MIT as the amount of quenched disorder is increased, occurring in a manner that is in agreement with theoretical predictions.
Interaction between negatively charged Nafion® and a positively charged polybenzimidazole‐decorated carbon nanotube leads to the formation of an ionic complex with high charge density for proton conduction, which can lead to an improvement in transport properties. Here we investigate the high‐temperature and low‐humidity proton conductivity of this nanocomposite membrane as a potential membrane for fuel cell applications.
Bi2Te3 doped p‐type Pb0.13Ge0.87Te samples were prepared by hot pressing. We report on very high power factor values of ～30 μW/cm K2 at 500 °C, as were determined from Seebeck coefficient and electrical resistivity measurements. From dilatometric characterization, the phase transition from the low temperature rhombohedral to the high temperature cubic NaCl structures, takes place at 373 °C. This transition is accompanied by a continuous and gradual change of the lattice parameters, as was observed by hot stage XRD, suggesting a good mechanical durability upon thermal cycling and operating in large thermal gradients.
Heteroepitaxial growth of kesterite Cu2ZnSnS4 (CZTS) thin film on cubic ZnS(100) single crystal substrate was achieved by radio frequency magnetron sputtering from a single CZTS target. An optimal substrate temperature in the range of 470–500 °C is found suitable for this epitaxial growth. The growth of CZTS was confirmed to be along a‐axis. The sputtered CZTS thin film is homogeneous throughout the whole film. The band gap of the film is found to be approximately 1.51 eV, i.e., promising for high efficiency thin film solar cells.
Epitaxial TiC/SiC multilayers were grown by magnetron sputtering at a substrate temperature of 550 °C, where SiC is normally amorphous. The epitaxial TiC template induced growth of cubic SiC up to a thickness of ～2 nm. Thicker SiC layers result in a direct transition to growth of the metastable amorphous SiC followed by renucleation of nanocrystalline TiC layers.
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