In this study, we demonstrate the optimization of the annealing temperature for enhanced thermoelectric properties of ZnO. Thin films of ZnO are grown on a sapphire substrate using the metal organic chemical Vapor Deposition (MOCVD) technique. The grown films are annealed in an oxygen environment at 600–1000°C, with a step of 100°C for one hour. Seebeck measurements at room temperature revealed that the Seebeck coefficient of the sample that was not annealed was 152 μV/K, having a carrier concentration of ND ~ 1.46 × 1018 cm–3. The Seebeck coefficient of the annealed films increased from 212 to 415 μV/K up to 900°C and then decreased at 1000°C. The power factor is calculated and found to have an increasing trend with the annealing temperature. This observation is explained by the theory of Johnson and Lark–Horovitz that thermoelectric properties are enhanced by improving the structure of ZnO thin films. The Hall measurements and PL data strongly justify the proposed argument. 相似文献
The crystallinity of Si/SiNx multilayers annealed by a rapid thermal process and furnace annealing is investigated by a Raman-scattering technique and
transmission electron microscopy. It is found that the crystallization temperature varies from 900 °C to 1000 °C when the
thickness of a-Si:H decreases from 4.0 nm to 2.0 nm. Raman measurements imply that the high crystallization temperature for
the a-Si:H sublayers originates from the confinement modulated by the interfaces between a-Si:H and a-SiNx:H. In addition to the annealing temperature, the thermal process also plays an important role in crystallization of a-Si
sublayers. The a-Si:H sublayers thinner than 4.0 nm can not be crystallized by furnace annealing for 30 min, even when the
annealing temperature is as high as 1000 °C. In contrast, rapid thermal annealing is advantageous for nucleation and crystallization.
The origin of process-dependent crystallization in constrained a-Si:H is briefly discussed.
Received: 11 April 2001 / Accepted: 20 June 2001 / Published online: 30 August 2001 相似文献
Nanostructured TiO2 thin films have been prepared through chemical route using sol-gel and spin coating techniques. The deposited films were
annealed in the temperature range 400–1000°C for 1 h. The structure and microstructure of the annealed films were characterized
by GAXRD, micro-Raman spectroscopy and AFM. The as-deposited TiO2 thin films are found to be amorphous. Micro-Raman and GAXRD results confirm the presence of the anatase phase and absence
of the rutile phase for films annealed up to 700°C. The diffraction pattern of the film annealed at 800 to 1000°C contains
peaks of both anatase and rutile reflections. The intensity of all peaks in micro-Raman and GAXRD patterns increased and their
width (FWHM) decreased with increasing annealing temperature, demonstrating the improvement in the crystallinity of the annealed
films. Phase transformation at higher annealing temperature involves a competition among three events such as: grain growth
of anatase phase, conversion of anatase to rutile and grain growth of rutile phase. AFM image of the asdeposited films and
annealed films indicated exponential grain growth at higher temperature.
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Phase transition from anatase to rutile for the 70 nm TiO2 crystallite has been investigated by the time differential perturbed angular correlation (TDPAC) technique. The study involved the annealing of the TiO2 nanocrystals, adsorbed with the nuclear probe (181Hf/181Ta) at trace level, at different temperatures for different durations. The TDPAC measurement was also supported by XRD measurement where the width of the peaks increases with the increase in annealing temperature indicating a crystal growth. The samples annealed up to 823 K for 4 h showed no phase transition, except for the growth of the crystallites. However, it showed phase transition at the same temperature (823 K), when annealed for longer duration, indicating the slower kinetics of the phase transition process. Further the sample, when annealed at 1123 K for 4 h, showed phase transition. It has also been observed that the 181Hf tracer, adsorbed on 70 nm anatase TiO2, diffuses from surface to bulk during the phase transition process and the extent of diffusion in anatase differs from that in rutile phase. However, surface to bulk mass-transfer is found to play a significant role in the phase transition process. 相似文献
The transfer characteristics (ID–VG) of multilayers MoS2 transistors with a SiO2/Si backgate and Ni source/drain contacts have been measured on as‐prepared devices and after annealing at different temperatures (Tann from 150 °C to 200 °C) under a positive bias ramp (VG from 0 V to +20 V). Larger Tann resulted in a reduced hysteresis of the ID–VG curves (from ~11 V in the as‐prepared sample to ~2.5 V after Tann at 200 °C). The field effect mobility (~30 cm2 V–1 s–1) remained almost unchanged after the annealing. On the contrary, the subthreshold characteristics changed from the common n‐type behaviour in the as‐prepared device to the appearance of a low current hole inversion branch after annealing. This latter effect indicates a modification of the Ni/MoS2 contact that can be explained by the formation of a low density of regions with reduced Schottky barrier height (SBH) for holes embedded in a background with low SBH for electrons. Furthermore, a temperature dependent analysis of the subthreshold characteristics revealed a reduction of the interface traps density from ~9 × 1011 eV–1cm–2in the as‐prepared device to ~2 × 1011 eV–1cm–2after the 200 °C temperature–bias annealing, which is consistent with the observed hysteresis reduction.
Schematic representation of a back‐gated multilayer MoS2 field effect transistor (left) and transfer characteristics (right) measured at 25 °C on an as‐prepared device and after the temperature–bias annealing at 200 °C under a positive gate bias ramp from 0 V to +20 V. 相似文献
CdS/CdSe co-sensitizers on TiO2 films were annealed using a two-step procedure; high temperature (300 °C) annealing of TiO2/CdS quantum dots (QDs), followed by low temperature (150 °C) annealing after the deposition of CdSe QDs on the TiO2/CdS. For comparison, two types of films were prepared; CdS/CdSe-assembled TiO2 films conventionally annealed at a single temperature (150 or 300 °C) and non-annealed films. The 300 °C-annealed TiO2/CdS/CdSe showed severe coalescence of CdSe QDs, leading to the blocked pores and hindered ion transport. The QD-sensitized solar cell (QD-SSC) with the 150 °C-annealed TiO2/CdS/CdSe exhibited better overall energy conversion efficiency than that with the non-annealed TiO2/CdS/CdSe because the CdSe QDs annealed at a suitable temperature (150 °C) provided better light absorption over long wavelengths without the hindered ion transport. The QD-SSC using the two-step annealed TiO2/CdS/CdSe increased the cell efficiency further, compared to the QD-SSC with the 150 °C-annealed TiO2/CdS/CdSe. This is because the 300 °C-annealed, highly crystalline CdS in the two-step annealed TiO2/CdS/CdSe improved electron transport through CdS, leading to a significantly hindered recombination rate. 相似文献
Heusler alloy Ni50.0Mn35.5In14.5 ribbons were prepared by melt-spinning technique. Several short time annealings were carried out in order to enhance the exchange bias effect in this alloy ribbon. The magnetic transition temperature increases with the annealing, compared to the as-spun sample, however no significant differences in respective Curie temperatures were observed for austenite and martensite phases in such annealed samples. Exchange bias effect is observed at low temperatures for all samples and practically vanishes at 60 K for the as-spun sample, whereas for the annealed ribbons it vanishes at 100 K. 相似文献
Metal-organic decomposed lanthanum cerium oxide (LaxCeyOz) film had been spin-coated on n-type Si substrate. Effects of post-deposition annealing temperature and time on the metal-oxide-semiconductor
(MOS) properties of the film were studied. As temperature increased from 400 to 1000°C for 15 minutes dwell time, LaxCeyOz demonstrated a decrease in interface trap density (Dit) and total interface trap density (Dtotal), which were related to the formation of SiOx/silicates interfacial layer (IL). The lowest leakage current density and highest dielectric breakdown voltage (VB) was obtained in 1000°C-annealed sample. When longer annealing times (30–120 minutes) were studied on the 1000°C-annealed
sample, the sample annealed at 1000°C for 120 min showed the best MOS characteristics with VB of 30 V. Reasons contributing to such observation were discussed. 相似文献
Exchange-biased bilayers are widely used in the pinned layers of spintronic devices. While magnetic field annealing (MFA) was routinely engaged during the fabrication of these devices, the annealing effect of NiO/CoFe bilayers is not yet reported. In this paper, the transition from NiO/Co90Fe10 bilayer to nanocomposite single layer was observed through rapid thermal annealing at different temperatures under magnetic field. The as-deposited and low-temperature (<623 K) annealed samples had rock salt (NiO) and face center cubic (Co90Fe10) structures. On the other hand, annealing at 623 K and 673 K resulted in nanocomposite single layers composed of oxides (matrix) and alloys (precipitate), due to grain boundary oxidization and strong interdiffusion in the NiO/CoFe and CoFe/SiO2 interfaces. The structural transition was accompanied by the reduction of grain sizes, re-ordering of crystallites, incensement of roughness, and reduction of Ni2+. When measured at room temperature, the bilayers exhibited soft magnetism with small room-temperature coercivity. The nanocomposite layers exhibited an enhanced coercivity due to the changes in the magnetization reversal mechanism by pinning from the oxides. At 10 K, the increased antiferromagnetic anisotropy in the NiO resulted in enhanced coercivity and exchange bias in the bilayers. The nanocomposites exhibited weaker exchange bias compared with the bilayers due to frustrated interfacial spins. This investigation on how the magnetic properties of exchange-biased bilayers are influenced by magnetic RTA provides insights into controlling the magnetization reversal properties of thin films. 相似文献
The impact of annealing at 300 °C on the elemental composition and the atomic structure of the Co/V interface in the 2.5 Å Co/70 Å V/MgO (100) system has been investigated by medium energy ion scattering (MEIS) using 100 keV He+ ions. By combining the experimental MEIS results with simulations we show that, while the Co/V interface is abrupt for the system kept at room temperature, annealing at 300 °C induces a strong interdiffusion leading to a Co0.5V0.5 surface bcc alloy with a high degree of disorder. Additionally, the MEIS data suggest that the surface of the annealed system is slightly rumpled by ~ 0.2 Å. 相似文献
In the present work anatase–rutile transformation temperature and its effect on physical/chemical properties as well as photocatalytic activity of TiO2 particles were investigated. The characterisation of the synthesised and annealed TiO2 particles were determined by X-Ray Powder Diffraction (XRD), scanning electron microscope (SEM), dynamic light scattering (DLS) and Brunauer–Emmett–Teller surface area analysis (BET). The refraction in the ultraviolet–visible (UV–vis) range was assessed using a dual-beam spectrophotometer. The photocatalytic performance of the particles was tested on methylene blue solution. The XRD data indicated that the percentage of rutile increased with the annealing temperature and almost 100% of anatase transformed to rutile at 1000 °C. In addition, the phase transformation was a linear function of annealing temperature so phase composition of TiO2 can be controlled by changing the annealing temperature. The SEM and BET results presented the increase of agglomerate size and the decrease of specific surface area with the increasing annealing temperature. This proved that anatase has smaller particle size and higher surface area than rutile. The photocatalytic activity of the annealed TiO2 powders reduced with the increase of annealing temperature. The samples annealed at 900 °C and 925 °C with anatase: rutile ratio of 92:8 and 77:23, respectively, showed the best activity. These results suggested that the photocatalytic activity of TiO2 particles is a function of phase composition. Thus it can be enhanced by changing its phase composition which can be controlled by annealing temperature. 相似文献