A hybrid metamaterial with the integration of molybdenum disulfide(MoS2)overlayer is proposed to manipulate the terahertz(THz)wave.The simulated results indicate that the introduction of MoS2 layer could significantly modify the resonant responses with large resonance red-shift and bandwidth broadening due to the depolarization field effect,especially for the structure on the small permitivity substrate.Additionally,the wide-band modulator in off-resonant region and a switch effect at resonance can be achieved by varying the conductivity of MoS2 layer.Further theoretical calculations based on the Lorentz coupling model are consistent with the simulated results,explicating the response behaviors originate from the coupling between MoS2 overlayer and the metastructure.Our results could provide a possibility for active control THz modulator and switchable device based on the MoS2 overlayer and advance the understanding of the coupling mechanism in hybrid structures. 相似文献
The transfer characteristics (ID–VG) of multilayers MoS2 transistors with a SiO2/Si backgate and Ni source/drain contacts have been measured on as‐prepared devices and after annealing at different temperatures (Tann from 150 °C to 200 °C) under a positive bias ramp (VG from 0 V to +20 V). Larger Tann resulted in a reduced hysteresis of the ID–VG curves (from ~11 V in the as‐prepared sample to ~2.5 V after Tann at 200 °C). The field effect mobility (~30 cm2 V–1 s–1) remained almost unchanged after the annealing. On the contrary, the subthreshold characteristics changed from the common n‐type behaviour in the as‐prepared device to the appearance of a low current hole inversion branch after annealing. This latter effect indicates a modification of the Ni/MoS2 contact that can be explained by the formation of a low density of regions with reduced Schottky barrier height (SBH) for holes embedded in a background with low SBH for electrons. Furthermore, a temperature dependent analysis of the subthreshold characteristics revealed a reduction of the interface traps density from ~9 × 1011 eV–1cm–2in the as‐prepared device to ~2 × 1011 eV–1cm–2after the 200 °C temperature–bias annealing, which is consistent with the observed hysteresis reduction.
Schematic representation of a back‐gated multilayer MoS2 field effect transistor (left) and transfer characteristics (right) measured at 25 °C on an as‐prepared device and after the temperature–bias annealing at 200 °C under a positive gate bias ramp from 0 V to +20 V. 相似文献
Strong two‐photon absorption (TPA) in monolayer MoS2 is demonstrated in contrast to saturable absorption (SA) in multilayer MoS2 under the excitation of femtosecond laser pulses in the near‐infrared region. MoS2 in the forms of monolayer single crystal and multilayer triangular islands are grown on either quartz or SiO2/Si by employing the seeding method through chemical vapor deposition. The nonlinear transmission measurements reveal that monolayer MoS2 possesses a nonsaturation TPA coefficient as high as ∼(7.62 ±0.15) ×103 cm/GW, larger than that of conventional semiconductors by a factor of 103. As a result of TPA, two‐photon pumped frequency upconverted luminescence is observed directly in the monolayer MoS2. For the multilayer MoS2, the SA response is demonstrated with the ratio of the excited‐state absorption cross section to ground‐state cross section of ∼0.18. In addition, the laser damage threshold of the monolayer MoS2 is ∼97 GW/cm2, larger than that of the multilayer MoS2 of ∼78 GW/cm2.
Hydrogen produced from water splitting is a renewable and clean energy source. Great efforts have been paid in searching for inexpensive and highly efficient photocatalysts. Here, significant enhancement of hydrogen production has been achieved by introducing ≈1 mol% of MoS2 to Cu2ZnSnS4 nanoparticles. The MoS2/Cu2ZnSnS4 nanoparticles showed a hydrogen evolution rate of ≈0.47 mmol g−1 h−1 in the presence of sacrificial agents, which is 7.8 times that of Cu2ZnSnS4 nanoparticles (0.06 mmol g−1 h−1). In addition, the MoS2/Cu2ZnSnS4 nanoparticles exhibited high stability, and only ≈3% of catalytic activity was lost after a long time irradiation (72 h). Microstructure investigation on the MoS2/Cu2ZnSnS4 nanoparticles reveals that the intimate contact between the nanostructured MoS2 and Cu2ZnSnS4 nanoparticles provides an effective one‐way expressway for photogenerated electrons transferring from the conduction band of Cu2ZnSnS4 to MoS2, thus boosting the lifetime of charge carriers, as well as reducing the recombination rate of electrons and holes. 相似文献