Spectroscopic ellipsometry investigations of porous SiO2 films prepared by glancing angle deposition

We present the optical and the structural properties of porous SiO₂ films fabricated by using a glancing angle deposition technique. The influence of the glancing angle on the pseudorefractive index of porous SiO₂ films was studied by spectroscopic ellipsometry in the UV–visible region. The relationships among the pseudorefractive index, the porosity, and the glancing angle are determined. The results show that the pseudorefractive index decreases and the porosity increases with the increase of glancing angle. The minimum pseudorefractive index is found to be 1.11 at 532 nm for the porous SiO₂ film deposited at a glancing angle of 87°. The structural and surface morphology of these samples was also investigated by using a scanning electron microscope. The results indicate that the as‐deposited SiO₂ thin films are porous with a tilted‐columnar structure and low pseudorefractive index. Copyright © 2013 John Wiley & Sons, Ltd.     

不同基底对TiO2和SiO2薄膜的光学性能的影响

采用溶胶-凝胶法分别在K9玻璃、单晶硅和石英玻璃基底上制备了纳米TiO₂和SiO₂薄膜。利用SEM、UV-Vis及反射式椭圆偏振光谱仪对薄膜的微观结构及光学特性进行了表征和分析。结果表明:3种基底中, 单晶硅基底上TiO₂和SiO₂薄膜折射率最大;在非晶态K9玻璃和石英玻璃基底上TiO₂薄膜折射率和透光率差异较大;SiO₂薄膜在非晶态基底上折射率、透光率相近;3种基底上薄膜的折射率和消光系数都有随波长增大而减小的趋势, 同时Cauchy模型能较好的描述单晶硅基底上两种薄膜在400~800 nm波段的光学性能。     

不同基底对TiO2和SiO2薄膜的光学性能的影响

采用溶胶-凝胶法分别在K9玻璃、单晶硅和石英玻璃基底上制备了纳米TiO₂和SiO₂薄膜。利用SEM、UV-Vis及反射式椭圆偏振光谱仪对薄膜的微观结构及光学特性进行了表征和分析。结果表明：3种基底中, 单晶硅基底上TiO₂和SiO₂薄膜折射率最大;在非晶态K9玻璃和石英玻璃基底上TiO₂薄膜折射率和透光率差异较大;SiO₂薄膜在非晶态基底上折射率、透光率相近;3种基底上薄膜的折射率和消光系数都有随波长增大而减小的趋势, 同时Cauchy模型能较好的描述单晶硅基底上两种薄膜在400~800 nm波段的光学性能。     

Surface characterization of the SiOx films prepared by a remote atmospheric pressure plasma jet

The deposition rate and surface properties of SiO_x films were prepared and investigated using remote atmospheric pressure plasma (APP) jet. The APP, generated with low frequency power at 16 kHz, was fed with tetraethoxysilane (TEOS)/air gas mixture. After deposition, the SiO_x films were analyzed for chemical characteristics, elemental composition, surface morphology, and hardness. It was found that the deposition substrate temperature is the key factor to affect the deposition rate of remote APP chemical vapor deposition process. Fourier transform infrared (FTIR) spectra indicated that APP deposited SiO_x films are an inorganic feature. XPS examination revealed that the SiO_x films contained approximately 30% silicon, 58% oxygen and 12% carbon. Atomic forced microscopy (AFM) analysis results indicated a smooth surface of SiO_x films in deposition under higher substrate temperature. Also, pencil hardness tests indicated that the hardness of APP deposited SiO_x films was greatly improved with increasing substrate temperatures. Copyright © 2008 John Wiley & Sons, Ltd.     

Characterization of a passivation layer comprising MgO?SiO2 and ZrO2

Thin films with magnesium oxide (MgO) and silicon oxide (SiO₂) compounds mixed at various mixture ratios were deposited on flexible polyether sulfone (PES) substrates by an e‐beam evaporator to investigate their potential for transparent barrier applications. In this study, as the MgO fraction increased, thin films comprising MgO and SiO₂ compounds became more amorphous, and their surface morphologies became smoother and denser. In addition, zirconium oxide (ZrO₂) was added to the above‐mentioned compound mixtures, and the properties of the compound mixture comprising Mg? Si? Zr? O were then measured. ZrO₂ made the thin mixture films more amorphous, and made the surface morphology denser and more uniform. Whole thin films of 250 ± 30 nm in thickness were formed, and their water vapor transmission rates (WVTRs) decreased rapidly. The best WVTR was obtained by depositing thin films of Mg? Si? Zr? O compound among the whole thin films. The WVTRs of the PES substrate in the bare state decreased from 47 to 0.8 g m^?2 day^?1. This Mg? Si? Zr? O compound was deposited on polyethylene terephtalate (PET) substrates again to confirm the availability of the compound mixture. Thin films on the PET substrates decreased the WVTRs remarkably from 2.96 to 0.01 g m^?2 day^?1. These results were similar to those of thin films on PES substrates. As the thin mixture films became more amorphous and surface morphology denser and more uniform, the WVTRs decreased. Therefore, the thin mixture films became more suitable for flexible organic light emitting displays (OLEDs) as transparent passivation layers against moisture in air. Copyright © 2006 John Wiley & Sons, Ltd.     

Effect of deposition parameters on the wettability and microstructure of superhydrophobic films with hierarchical micro-nano structures

Superhydrophobic films with hierarchical micro-nano structures were deposited on glass substrates by solution immersion method from a solution containing cobalt chloride, urea and cetyl trimethyl ammonium bromide (CTAB). Subsequently the films were hydrophobized with a low surface energy material like octadecanoic acid under ambient conditions resulting in superhydrophobic surfaces with water contact angle (WCA) of about 168° and contact angle hysteresis of 1°. The effect of deposition parameters such as solution composition, temperature, deposition time and alkanoic acid treatment on surface morphology and wettability of the films was studied. Mechanism of formation of cobalt chloride carbonate hydroxide film is discussed. Addition of CTAB to the solution resulted in a change in the surface morphology of the deposited films with flower-like structures. The wettability of films obtained under different process conditions was correlated to surface roughness using Wenzel and Cassie models.     

Sol–Gel SiO2-ZrO2 Coatings for Optical Applications

SiO₂-ZrO₂ based nanostructured multilayers films have been prepared by sol–gel processing from metallorganic precursors by low temperature inorganic polymerization reactions. Simultaneous gelation of both precursors was realized. Homogeneous and transparent films were obtained at room temperature by dip- and spin-coating on glass and silicon wafer substrates. Samples with successively deposited layers (1–3 layers) and successive thermal treatments have been also studied. Each deposited layer was thermally treated for 1 h at 300°C. The coatings were characterized by XRD, spectroellipsometry (SE), UV-VIS spectroscopy and AFM methods. The influence of substrates, number of coatings and number of thermal treatments on the optical and structural properties of the films was established. The thickness of three deposited SiO₂-ZrO₂ layers is about 496 nm on glass substrates and 413 nm on the silicon wafer substrate. The films deposited on glass are more porous than those deposited on silicon. The properties of optical waveguide prepared from SiO₂-ZrO₂ layers on silicon substrates will be discussed.     

Nanoindentation testing of SiO<Subscript>2</Subscript>-PMMA hybrid films on acrylic substrates with variable coupling agent content

In this work we report the influence of the molar composition of the coupling agent, as well as the curing conditions on the mechanical properties of SiO₂-PMMA (polymethyl methacrylate) hybrid films deposited on organic acrylic substrates. The SiO₂-PMMA hybrid films were deposited by the sol–gel method from hybrid precursor solutions with fixed molar ratio of 1:0.25 for TEOS/MMA (Tetraethyl-orthosilicate/Methylmethacrylate) and TEOS/TMSPM (3-trimethoxysilyl propyl methacrylate) molar ratios ranging from 1:0.05 to 1:0.2. The organic compound TMSPM was used as coupling agent to enhance the bond between the organic and inorganic molecules. The wear resistance, hardness and elastic modulus of the hybrid films were determined by nanoindentation techniques and compared to the substrate mechanical behaviour. The chemical bonding in the hybrid films was analyzed by Fourier Transform Infrared spectroscopy and their transparency by optical transmission and reflection spectroscopy. The friction coefficient and sliding life of the hybrid films were also measured with a pin-on-disc tribometer. The surface morphology and roughness were determined from atomic force microscopy images. The hybrid films with lowest content of coupling agent showed the best mechanical performance in terms of hardness, friction coefficient and wear resistance keeping high optical transparency.     

Effect of substrate on phase formation and surface morphology of sol-gel lead-free KNbO3, NaNbO3, and K0.5Na0.5NbO3 thin films

Environmentally acceptable lead-free ferroelectric KNbO₃ (KN) or NaNbO₃ (NN) and K_0.5Na_0.5NbO₃ (KNN) thin films were prepared using a modified sol-gel method by mixing potassium acetate or sodium acetate or both with the Nb-tartrate complex, deposited on the Pt/Al₂O₃ and Pt/SiO₂/Si substrates by a spin-coating method and sintered at 650°C. X-ray diffraction (XRD) analysis indicated that the NN and KNN films on the Pt/SiO₂/Si substrate possessed a single perovskite phase, while NN and KNN films on the Pt/Al₂O₃ substrate contained a small amount of secondary pyrochlore phase, as did KN films on both substrates. Scanning electron microscopic (SEM) and atomic force microscopic (AFM) analyses confirmed that roughness R _q of the thin KNN/Pt/SiO₂/Si film (?? 7.4 nm) was significantly lower than that of the KNN/Pt/Al₂O₃ film (?? 15 nm). The heterogeneous microstructure composed of small spherical and larger needle-like or cuboidal particles were observed in the KN and NN films on both substrates. The homogeneous microstructure of the KNN thin film on the Pt/SiO₂/Si substrate was smoother and contained finer spherical particles (?? 50 nm) than on Pt/Al₂O₃ substrates (?? 100 nm). The effect of different substrates on the surface morphology of thin films was confirmed.     

Polymer-Based Superhydrophobic Coating Fabricated from Polyelectrolyte Multilayers of Poly(allylamine hydrochloride) and Poly(acrylic acid)

Superhydrophobic films mainly based on poly(allylamine hydrochloride) (PAH) and poly(acrylic acid) (PAA) polyelectrolyte multilayer have been deposited onto cleaned glass substrate by a layer-by-layer dip coating method. 3 bilayers of the PAH and PAA was directly coated onto the substrate as an underlying layer for subsequent coating. Desired surface roughness on the polyelectrolyte bilayers was created by etching the bilayers in hydrochloric acid solution so as to create the open pore having suitable size at the surface. Then, nanoparticles such as SiO₂ and TiO₂ of various sizes were deposited onto the etched polyelectrolyte bilayers. Finally, the surfaces were further modified with semifluorinated silane followed by cross-linking at 180 °C for 2 h to obtain desirable surface morphological features. The effect of etching time and addition of nanoparticles on surface morphology was investigated using an atomic force microscope (AFM). Wetting ability of the prepared film was determined by measuring water droplet contact angle using a goniometer. Adhesion between the superhydrophobic films and the substrate was evaluated by using a standard tape test method (D3359). The adhesion was improved by reducing the organic content in the films.     

Deposition of SiO2-Like Films by HMDSN/O2 Plasmas at Low Pressure in a MMP-DECR Reactor

The effects of process parameters such as O₂/HMDSN (hexamethyldisilazane) ratio, microwave discharge power and deposition pressure on the growth rate, chemical bonding nature, and refractive index of thin films deposited by microwave plasma from HMDSN with oxygen, have been investigated. The plasma was created in a Microwave Multipolar reactor excited by Distributed Electron Cyclotron Resonance. The films were deposited at room temperature and characterized by Fourier Transform Infrared spectroscopy and ellipsometry. Growth rate increased with the discharge power P or the deposition pressure but decreased significantly with increasing O₂/HMDSN ratio. A large change in the film composition was observed when the O₂/HMDSN ratio was varied: films deposited with only HMDSN precursor are polymer-like but as the O₂/HMDSN ratio increased, organic groups decreased. For relative pressure values over 70%, deposited films are SiO₂-like with refractive index values close to those found for thermal silicon dioxide.     

Preparation of superhydrophobic PET fabric from Al<Subscript>2</Subscript>O<Subscript>3</Subscript>–SiO<Subscript>2</Subscript> hybrid: geometrical approach to create high contact angle surface from low contact angle materials

In this work we prepare high contact Poly Ethylene Terephthalate (PET) fabric surface from low contact angle materials. Superhydrophobic PET fabric is prepared by coating the fabric with hybrid Al₂O₃–SiO₂ sol. In this case, the high contact angle Al₂O₃–SiO₂ hybrid is created from low contact angle Al₂O₃ and SiO₂ precursors. PET treated with hybrid Al₂O₃–SiO₂ exhibit Water Contact Angle (WCA) as 150°, while PET treated with individual Al₂O₃ sol or SiO₂ sol exhibits lower WCA, (Al₂O₃ WCA = 137°; SiO₂ WCA = 141°). FESEM and AFM investigations show that the hybrid Al₂O₃–SiO₂ sol and individual Al₂O₃ or SiO₂ sol imparted different roughness geometry on the PET fabric surface. We observe surface structure of fish fin-like, particle-like and hybrid fin-particle for treated PET fabric with; Al₂O₃, SiO₂ and hybrid Al₂O₃–SiO₂ sol, under FESEM and AFM observations.AFM observations show the evolution of roughness (Ra) dimension of different surface structures with the order of: SiO₂ < Al₂O₃ < Al₂O₃–SiO₂ (Ra = 31, 63 and 273 nm). We believe that the disparity of the surface geometries lead into different surface WCA. FTIR spectra of Hybrid Al₂O₃–SiO₂ shows additional peak at 902, 850, 557, and 408 cm⁻¹ which can be ascribed to the hybridization structure.     

掺杂钒和硅对TiO2薄膜超亲水性的影响

0引言 TiO2薄膜是众多氧化物半导体薄膜中研究最为广泛的一种材料．其表面的超亲水性和表面自清洁效应开辟了光催化薄膜功能材料的新的研究领域，已成为众多研究者研究的对象。但是如果薄膜仅由TiO2组成，当光照停止，水在TiO2薄膜表面的润湿角逐渐升高．并恢复原始状态。TiO2的禁带较宽，普通光线如太阳光等都不能将其激发．限制了其实际应用。因此如何使TiO2材料的光谱响应范围由紫外光反扩展到可见．光区一日如何更长时间地保持薄膜良好的亲水性是目前研究的重点。     

Synthesis and characterization of PAni–SiO2 and PTh–SiO2 nanocomposites' thin films by plasma polymerization

In the present work, we explore the possibility to deposit polyaniline–silicon dioxide (PAni–SiO₂) and polythiophene–silicon dioxide (PTh–SiO₂) nanocomposites through a plasma polymerization route. The films were generated by spraying of mixtures of nano-sized silica particles dispersed in the liquid monomer into a plasma stream of the DC-plasma discharge reactor. The silica in the resulted polymer matrix changes the conduction mechanisms varying from ohmic to ballistic and traps inducing the space charged limited currents (SCLC). The silica modifies the morphology and composition of the deposited films.     

Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors

Titanium dioxide (TiO₂) thin films were deposited onto p‐Si substrates held at room temperature by reactive Direct Current (DC) magnetron sputtering at various sputter powers in the range 80–200 W. The as‐deposited TiO₂ films were annealed at a temperature of 1023 K. The post‐annealed films were characterized for crystallographic structure, chemical binding configuration, surface morphology and optical absorption. The electrical and dielectric properties of Al/TiO₂/p‐Si structure were determined from the capacitance–voltage and current–voltage characteristics. X‐ray diffraction studies confirmed that the as‐deposited films were amorphous in nature. After post‐annealing at 1023 K, the films formed at lower powers exhibited anatase phase, where as those deposited at sputter powers > 160 W showed the mixed anatase and rutile phases of TiO₂. The surface morphology of the films varied significantly with the increase of sputter power. The electrical and dielectric properties on the air‐annealed Al/TiO₂/p‐Si structures were studied. The effect of sputter power on the electrical and dielectric characteristics of the structure of Al/TiO₂/p‐Si (metal‐insulator‐semiconductor) was systematically investigated. Copyright © 2014 John Wiley & Sons, Ltd.     

Nitridation of niobium films by rapid thermal processing: different behaviour of films on oxydized silicon and monocrystalline sapphire substrates

By electron beam evaporation and RF magnetron sputtering 500 nm thick niobium films were deposited on thermally oxidized Si-(100)-wafers and by RF magnetron sputtering on monocrystalline sapphire-(1-102)-wafers. Investigations by scanning electron microscopy (SEM) and atomic force microscopy (AFM) revealed differences of the film morphology depending on the substrate used: films deposited on SiO₂ exhibited an even surface with small crystallites, films on sapphire showed parallel surface structures with relatively large and well-shaped crystallites pointing at regular crystal growth influenced by the substrate. These differences in film morphology were also reflected in different reflection intensities of the films in XRD patterns, indicating that the films deposited on sapphire were strongly textured. In a first set of experiments nitridation in molecular nitrogen and ammonia was investigated. In a second set of experiments, it was tried to form oxynitrides of niobium by annealing the nitrided films in molecular oxygen. Particularly by X-ray-diffraction the formation of different nitride and oxide phases in dependence of the reaction temperature was examined. Further, elemental depth profiles were recorded by secondary ion mass spectrometry (SIMS) to track the position of the phases formed in the film. The different substrates led to disparate film reactivities, resulting in different nitridation grades of the films at similar reaction temperatures. In general, larger crystallite sizes resulted in less chemical reactivity of the films: even after nitridation at 1000 °C metallic niobium was still present in films deposited on sapphire. However, no evidence was obtained for the formation of oxynitrides by the process sequence observed.     

一种简单的提高无定形TiO2光催化活性的方法及其在增透膜中的应用

通过简单的溶胶-凝胶法制备得到了小粒径的无定形TiO_2粒子,并将其沉积在多孔SiO_2膜层表面,多孔SiO_2膜层大的表面积有助于无定形TiO_2的良好分散,高度分散的无定形TiO_2粒子对膜层的光学性能影响较小,通过匹配合适的低折射率的SiO_2膜层,制备得到的SiO_2无定形TiO_2(SiO_2amorphous-TiO_2)膜层表现出和理想单层增透膜相似的光学性能。同时SiO_2amorphous-TiO_2的光催化性能显著提高,明显高于单层无定形TiO_2。而且SiO_2无定形TiO_2膜层甚至表现出比相应的负载锐钛矿型TiO_2的膜层,即SiO_2锐钛矿TiO_2,更高的光催化活性,这一反常现象的原因是,无定型TiO_2膜层表面丰富的羟基有助于减少空穴-电子对的复合,其相对疏松的结构能够加快光生电子-空穴的转移速率,而这些因素的影响超过了晶型结构对光催化活性的影响。同时SiO_2膜层的孔隙结构在浸渍-提拉镀制过程中,自发形成并不需要后续热处理过程,因此,整个SiO_2无定形TiO_2膜层的制备均可在室温下完成,能够实现其在不耐热基片上的应用。     

Vanadium Nitride Films Formed by Rapid Thermal Processing (RTP): Depth Profiles and Interface Reactions Studied by Complementary Analytical Techniques

The nitridation of vanadium films in molecular nitrogen and ammonia using a RTP‐system was investigated. The V films were deposited on silicon substrates covered by 100 nm thermal SiO₂. For a few experiments sapphire substrates were used. Nitride formation at high temperatures (900 and 1100 °C) and interface reactions and diffusion of oxygen out of the SiO₂‐layer into the metal lattice at moderate temperatures (600 and 700 °C) were studied. For characterisation complementary analytical methods were used: X‐ray diffraction (XRD) for phase analysis, secondary neutral mass spectrometry (SNMS) and Rutherford Backscattering (RBS) for acquisition of depth profiles of V, N, O, C and Si, transmission electron microscopy (TEM) in combination with electron energy filtering for imaging element distributions (EFTEM) and recording electron energy loss spectra (EELS) to obtain detailed information about the initial stages of nitride, oxide and oxynitride formation, respectively, and the microstructure and element distributions of the films. In these experiments the SiO₂‐layer acts as diffusion barrier for nitrogen and source for oxygen causing the formation of substoichiometric vanadium oxides and oxynitrides near the V/SiO₂‐interface primarily at temperatures ≤ 900 °C. At a temperature of 1100 °C just a small amount of oxynitride forms near the interface because rapid diffusion of nitrogen and fast formation of VN (diffusion barrier for oxygen) inhibit the outdiffusion of oxygen into the metal layer. In the 600 °C regime, in argon atmosphere oxynitride phases observed in the surface region of these films originate from reaction of residual oxygen in the argon gas, whereas NH₃ as process gas does not lead to oxide or oxynitride formation at the surface (apart from the oxidation caused by storage). NH₃ seems to support the diffusion of oxygen out of the SiO₂‐layer. During the decomposition of ammonia at higher temperatures hydrogen is formed, which could attack the SiO₂. In contrast, sapphire substrates do not act as oxygen source in the 600 °C regime and change the nitridation behaviour of the vanadium films.     

Preparation of TeOx–SiO2 film with excellent third-order nonlinear optical properties by electrochemically induced sol–gel method

TeO_x-SiO₂ composite films having third-order nonlinearities were prepared by electrochemically induced sol-gel deposition method on ITO substrate.The third-order optical nonlinearities of the films were measured by Z-scan technique.The third-order nonlinear susceptibilities(χ^（3）) of the as-prepared films are 5.9×10^-7 to 4.29×10^-6esu.The surface morphology and composition of the films were characterized by SEM/EDX,which identified that Te metallic particles well dispersed in TeO_x-SiO₂ gel films.