Write‐once–read‐many‐times memory (WORM) devices were fabricated using Ti/Au and Au as top contacts on ZnO thin films on Si. Electrical characterization shows that both types of WORM devices have large resistance OFF/ON ratio (R ratio), small resistance distribution range, long retention and good endurance. WORM devices with Au top contact have better performance of higher R ratio because of a larger work function of Au compared to Ti.
We demonstrated important changes produced on the modulation frequency of hybrid organic–inorganic light‐emitting diodes to examine the applicability as a light source for visible optical communications. The fabricated device structure was 4,4′‐bis[N ‐(1‐napthyl)‐N ‐phenyl‐amino]biphenyl/4,4′‐(bis(9‐ethyl‐3‐carbazovinylene)‐1,1′‐biphenyl:4,4′‐bis[9‐dicarbazolyl]‐2,2′‐biphenyl/ZnS/LiF/MgAg. This device showed an improvement in the modulation frequency using ZnS instead of an organic material, tris(8‐hydroxyquinoline)aluminum. A maximum cutoff frequency of 20.6 MHz was achieved.
By means of first‐principles calculations we predict the stability of silicene as buckled honeycomb lattice on passivated substrates of group‐IV(111)1 × 1 surfaces. The weak van‐der‐Waals interaction between silicene and substrates does not destroy its linear bands forming Dirac cones at the Brillouin zone corners. Only very small fundamental gaps are opened around the Fermi level.
We investigate the characteristics of intra‐grain and grain boundary defects in polycrystalline Si films, by employing quantitative electron paramagnetic resonance measurements on liquid phase crystallized layers with an average grain size of 200 µm and tailored solid phase crystallized Si layers with similar intra‐grain morphology but systematically varied grain sizes between 0.25 µm and 1 µm. The defect characteristics are found to be composed of two distinctive g ‐values of g = 2.0055 and 2.0032, which are attributed to grain boundary defects and intra‐grain defects, respectively. Additional hydrogenation leads to a reduction of the overall defect concentration, while a rapid thermal annealing process primarily heals intra‐grain defects.
We report the fabrication procedure and the characterization of an Al0.3Ga0.7As solar cell containing high‐density GaAs strain‐free quantum dots grown by droplet epitaxy. The production of photocurrent when two sub‐bandgap energy photons are absorbed simultaneously is demonstrated. The high quality of the quantum dot/barrier pair, allowed by the high quality of nanostructured strain‐free materials, opens new opportunities for quantum dot based solar cells.
The authors describe an organic complementary inverter with N,N′‐ditridecyl‐3,4,9,10‐perylenetetracarboxylic diimide as an n‐type semiconductor and pentacene as a p‐type semiconductor. Each transistor of the inverter exhibited high carrier mobility: 1.62 cm2/Vs for an n‐type drive transistor and 0.57 cm2/Vs for a p‐type switch transistor. The gain of the inverter reached 125. Another inverter using Ta2O5 as a high κ gate dielectric performed well with a gain of 500 and an operation voltage of only 5 V.
We present experimental and theoretical evidence of the role played by the spin–orbit coupling in the electronic structure of a pseudomorphic Au monolayer on Nb(001) substrate. The bands found with the help of the angle‐resolved ultraviolet photoelectron spectroscopy (ARUPS) are compared with those obtained from ab initio self‐consistent calculations by the VASP and WIEN2k codes. The slab calculations are performed including geometric relaxation and using both the generalized‐gradient (GGA) and local‐density (LDA) approximations for the exchange–correlation energy. The dispersions and energy positions of the calculated bands agree with the experimentally determined band structure only if the LDA is used and the spin–orbit coupling is included. Therefore, both the structure relaxation and spin–orbit coupling are essential in understanding the electronic structure of the Au/Nb(001) system.
The fabrication of titania nanostructures with hierarchical order of different structural levels is investigated. The nanostructures are prepared with a diblock‐copolymer assisted sol–gel process. By iterative spin‐coating of the solution onto silicon substrates a thin polymer‐nanocomposite film is deposited and transformed to purely anatase titania nanostructures via calcination. In total, this procedure is repeated three times on top of the substrate. The approach is monitored with grazing incidence small angle X‐ray scattering after each fabrication step. With scanning electron microscopy the final hierarchical structure is imaged. From the characterization different structural levels are clearly identified.
Metallic single‐walled carbon nanotubes (m‐SWCNTs) with excellent conductivity and transparency are considered to be eminent electrode materials. However, it still remains a challenge to separate m‐SWCNTs by their diameters. As reported in this Letter, by effective purification treatment of SWCNTs, we succeeded in achieving diameter separation of m‐SWCNTs using gel column chromatography. TEM and Raman characterizations revealed that metal catalysts and amorphous carbon on tube surfaces were largely reduced, which contributed to the diameter separation of m‐SWCNTs.
The possibility of multiferroicity arising from charge ordering in LuFe2O4 and structurally related rare earth ferrites is reviewed. Recent experimental work on macroscopic indications of ferroelectricity and microscopic determination of coupled spin and charge order indicates that this scenario does not hold. Understanding the origin of the experimentally observed charge and spin order will require further theoretical work. Other aspects of recent research in these materials, such as geometrical frustration effects, possible electric‐field‐induced transitions, or orbital order are also briefly treated.
We demonstrate by a Monte Carlo simulation that the reflection of quasi‐ballistically accelerated electrons at the interfaces of an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As double‐heterojunction structure is able to generate current oscillations at frequencies in the THz range. The possibility of taking advantage of this mechanism to generate THz signals has been demonstrated in structures with well dimension close to the electron ballistic transport length in In0.53Ga0.47As.
Light‐induced degradation of charge carrier lifetime was observed in indium‐doped silicon. After defect formation, an annealing step at 200 °C for 10 min deactivates the defect and the initial charge carrier lifetime is fully recovered. The observed time range of the defect kinetics is similar to the well known defect kinetics of the light‐induced degradation in boron‐doped samples. Differences between defect formation in boron‐ and indium‐doped silicon are detected and discussed. A new model based on an acceptor self‐interstitial ASi–Sii defect is proposed and established with experimental findings and existing ab‐initio simulations.
We present a computational study based on time‐dependent density functional theory of the optical absorption spectra of TiO2 nanowires sensitized with organic dye molecules. We concentrate on catechol and squaraine dyes. For those molecules, we compute adsorption geometries and energies and investigate the optical properties of the combined dye– nanowire system. We find that although the molecules have qualitatively different optical spectra in the gas phase, both lead to an enhancement of the absorption in the visible frequency range when adsorbed on a nanowire.
In the present work we use a series of Ti–Ru alloys, with minor amounts of Ru (0.01, 0.02, 0.05 and 0.2 at%) to grow anodic self‐organized Ru‐doped TiO2 nanotube layers. When used in dye‐sensitized solar cells (DSSCs), the nanotube layers with an optimum amount of Ru (0.02 at% Ru in the alloy) show a considerable increase in solar cell efficiency (η = 5.2%) under AM1.5 (100 mW/cm2) conditions compared with non‐doped TiO2 nanotubes (η = 4.3%).
The properties of transition‐metal (V, Cr, Mn, Fe, Co, Ni) δ‐doped ZnO are reported based on ab‐initio electronic structure calculations where the on‐site electronic correlations are included using the Hubbard parameters. The calculated electronic and magnetic properties are considerably altered with respect to usual band‐structure calculations. Most of the studied systems are found to be either half‐metals or ferromagnetic/antiferromagnetic semiconductors and thus can be employed in a variety of spintronic applications as spin‐filter materials.
Si nanodots of high density and hexagonal short‐range order are observed upon normal‐incidence bombardment of hot, crystalline Si with Bi3+ ions having a kinetic energy of a few tens of keV. The heights of nanodots are comparable to their widths of ～20 nm. The implanted Bi accumulates in tiny Bi nanocrystals in a thin Si top layer which is amorphous due to implantation damage. Light and heavy ions up to Xe cause smoothing of surfaces, but Bi3+ ions considered here have a much higher mass. Atomistic simulations prove that each Bi3+impact deposits an extremely high energy density resulting in a several nanometer large melt pool, which resolidifies within a few hundreds of picoseconds. Experiments confirm that dot patterns form only if the deposited energy density exceeds the threshold for melting. Comparing monatomic and polyatomic Bi ion irradiation, Bi–Si phase separation and preferential ion erosion are ruled out as driving forces of pattern formation. A model based on capillary forces in the melt pool explains the pattern formation consistently.
We report on the photoconductance in two‐dimensional arrays of gold nanorods. The arrays are formed by a combination of droplet deposition and stamping methods. We find that the plasmon induced photoconductance is sensitive to the linear polarization of the exciting photons consistent with the excitation of the longitudinal surface plasmon resonance of the nanorods.
We present metal wrap through (MWT) silicon solar cells with passivated surfaces based on a simplified device structure. This so‐called HIP‐MWT structure (high‐performance metal wrap through) does not exhibit an emitter on the rear side and therefore simplifies processing. The confirmed peak efficiency of the fabricated solar cells with an edge length of 125 mm, screen printed contacts and solder pads is 20.2%. To our knowledge, this is the highest value reported for large‐area p‐type silicon solar cells to date.
