Physics of organic ferroelectric field‐effect transistors

Most of the envisaged applications of organic electronics require a nonvolatile memory that can be programmed, erased, and read electrically. Ferroelectric field‐effect transistors (FeFET) are especially suitable due to the nondestructive read‐out and low power consumption. Here, an analytical model is presented that describes the charge transport in organic FeFETs. The model combines an empirical expression for the ferroelectric polarization with a density dependent hopping charge transport in organic semiconductors. Transfer curves can be calculated with parameters that are directly linked to the physical properties of both the comprising ferroelectric and semiconductor materials. A unipolar FeFET switches between a polarized and depolarized state, and an ambipolar FeFET switches between two stable polarized states. A good agreement between experimental and calculated current is obtained. The method is generic; any other analytical model for the polarization and charge transport can be easily implemented and can be used to identify the origin of the different transconductances reported in the literature. © 2011 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2011     

Syntheses,properties, and field‐effect transistors of small band gap quinoxaline‐ and thienopyrazine‐vinylene/ethynylene conjugated polymers

New conjugated copolymers of quinoxaline (AQ) and thienopyrazine (ATP) with vinylene (V) or ethynylene (E), poly[2,3‐bis(4‐(2‐ethylhexyloxy)phenyl)‐quinoxaline vinylene] (PAQV), poly[2,3‐bis(4‐(2‐ethylhexyloxy)phenyl)‐quinoxaline ethynylene)] (PAQE), poly[2,3‐bis(4‐(2‐ethylhexyloxy)phenyl)‐thieno[3,4‐b]pyrazine vinylene] (PATPV), and poly[2,3‐bis(4‐(2‐ethylhexyloxy)phenyl)‐thieno[3,4‐b]pyrazine ethynylene] (PATPE), were successfully synthesized by Stille coupling reaction. The optical band gaps of the PAQV, PAQE, PATPV, and PATPE were 1.86, 2.00, 0.88, and 0.90 eV, respectively, whereas the electrochemical band gaps were 1.99, 2.06, 1.00, and 1.06 eV, respectively. The reduced steric hindrance by the incorporation of the V or E linkage or the intramolecular charge transfer between the acceptor and the V or E linkage led to the small band gap. The AQ/ATP‐vinylene copolymers exhibited much higher vis/near infrared absorption intensity than the AQ/ATP‐ethynylene suggested the stronger π–π* transition intensity in the former and led to better charge‐transporting characteristics. The saturation field‐effect hole mobilities of the PATPV were 2.1 × 10^?3, 1.7 × 10^?2, and 1.1 × 10^?2 cm² V^?1 s^?1 on bare, octyltrichlorosilane (OTS)‐treated, and octadecyltrichlorosilane(ODTS)‐treated SiO₂, respectively, with on‐off current ratios of 35, 6.02 × 10², and 7.56 × 10². On the other hand, the estimated field‐effect transistor hole mobility of the PATPE was in the range of 1.7 × 10^?6–8.1 × 10^?4 cm² V^?1 s^?1, which was significantly smaller than those of the PATPV. The small band gaps and high charge carrier mobility of the prepared copolymers suggested their potential applications for near‐infrared electronic and optoelectronic devices. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 48: 74–81, 2010     

Anthradithiophene–thiophene copolymers with broad UV–vis absorption for organic solar cells and field‐effect transistors

New semiconducting copolymers, poly((TIPS‐ADT)‐(4,4′‐didodecyl‐2,2′‐bithiophene)) (PTADT2) and poly((TIPS‐ADT)‐(2,2′‐(4,4′‐didodecyl‐2,2′‐bithiophene)dithiophene)) (PTADT4) , produced by incorporating 5,11‐bis(triisopropylsilylethynyl) anthra[2,3‐b:7,6‐b']dithiophene (TIPS‐ADT) and alkyl‐thiophene derivatives were synthesized via Stille coupling polymerization. The optical, electrochemical, structural, field‐effect transistor, and solar cell properties of the polymers were investigated. The polymers showed good solubility at room temperature in common organic solvents due to their abundant side groups including TIPS and dodecyl side chains. Both polymers showed very broad UV absorption spectra covering the spectral range from 300 to 750 nm as a result of the combination of the different absorption ranges of the TIPS‐ADT unit (short wavelength region) and thiophene derivatives (long wavelength region). The FET device fabricated using PTADT4 containing additional unsubstituted thiophene rings as a spacer between TIPS‐ADT and thiophene derivatives showed a higher hole mobility (5.7 × 10^?4 cm²/V s) than the PTADT2 device (2.8 × 10^?5 cm²/V s), due to the improved intermolecular ordering caused by the reduced steric hindrance between bulky side chain groups. In addition, the PTADT4 :(6,6)‐phenyl‐C₇₀‐butyric acid methyl ester (PC₇₀BM) device showed an enhanced power conversion efficiency (PCE) of 1.30% compared with the PTADT2 :PC₇₀BM device (PCE of 0.55%) under AM 1.5G irradiation (100 mW/cm²). © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012     

Pyromellitic diimide‐based copolymers for ambipolar field‐effect transistors: Synthesis,characterization, and device applications

A pyromellitic diimide building block, 2,6‐bis(2‐decyltetradecyl)?4,8‐di(thiophen‐2‐yl)pyrrolo[3,4‐f]isoindole‐1,3,5,7(2H,6H)‐tetraone ( 4 ), is synthesized. Based on this building block and other electron‐rich units such as 2,2′‐bithiophene, thieno[3,2‐b]thiophene and 4,8‐bis(dodecyloxy)benzo[1,2‐b:4,5‐b′]dithiophene, three conjugated polymers P1 , P2 , and P3 are prepared in good yield via Stille coupling polymerization. These new copolymers have good solubility in common organic solvents and exhibit good thermal stability. The optical, electrochemical, and thermal properties of these polymers P1–P3 are carefully investigated, and their applications in solution‐processed organic field‐effect transistors are also studied. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2014 , 52, 2454–2464     

High‐performance field‐effect transistors based on furan‐containing diketopyrrolopyrrole copolymer under a mild annealing temperature

Two furan‐flanked polymers poly{3,6‐difuran‐2‐yl‐2,5‐di(2‐octyldodecyl)‐pyrrolo[3,4‐c]pyrrole‐1,4‐dione‐alt‐thienylenevinylene} (PDVFs), with a highly π‐extended diketopyrrolopyrrole backbone, are developed for solution‐processed high‐performance polymer field‐effect transistors (FETs). Atomic force microscopy and grazing incidence X‐ray scattering analyses indicate that PDVF‐8 and PDVF‐10 films exhibit a similar nodular morphology with the ultrasmall lamellar distances of 16.84 and 18.98 Å, respectively. When compared with the reported polymers with the same alkyl substitutes, this is the smallest d‐spacing value observed to date. This closed lamellar crystallinity facilitates charge carrier transport. Therefore, polymer thin‐film transistors fabricated from as‐spun PDVF‐8 films exhibit a high hole mobility exceeding 1.0 cm² V^?1 s^?1 with a current on/off ratio above 10⁶. After annealing treatment at 100 °C in air, the highest hole mobility of PDVF‐8‐based FETs was significantly improved to 1.90 cm² V^?1 s^?1, which is among the highest values of the reported FET devices fabricated from polymer thin films based on this mild annealing temperature. In contrast, long alkyl‐substituted PDVF‐10 exhibited a relatively low hole mobility of 1.65 cm² V^?1 s^?1 mainly resulting from low molecular weight. This work demonstrated that PDVFs would be promising semiconductors for developing cost‐effective and large‐scale production of flexible organic electronics. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2014 , 52, 1970–1977     

Crosslinkable high dielectric constant polymer dielectrics for low voltage organic field‐effect transistor memory devices

I n this study, we successfully synthesized water/methanol soluble random copolymers with a high dielectric constant, poly(n‐(hydroxymethyl) acrylamide‐co‐5‐(9‐(5‐(diethylamino)pentyl)?2‐(4‐vinylphenyl)?9H‐fluorene(P(NMA‐co‐F6NSt)), which contained chemical crosslinkable segment (NMA) and hole trapping building block (F6NSt). The feeding molar ratios of two monomers (NMA:F6NSt) were set as 100:0, 95:5, 80:20, and 67:33 for the copolymers of P1 , P2 , P3, and P4 , respectively. The crosslinked P(NMA‐co‐F6NSt) thin film could serve as both dielectric and charge storage layers in organic field‐effect transistor (OFET) memory device and exhibited high k (i.e., 4.91–6.47) characteristics, leading to a low voltage operation and a small power consumption. Devices based on the P1 ‐ P4 dielectrics showed excellent insulating properties and good charge storage performance under a low operating voltage in a range of ±5V because of tightly network structures and well‐dispersed trapping cites. In particular, P3 ‐based memory device exhibited a large memory window of 4.13 V with stable data retention stability over 10⁴ s, a large on/off ratio of 10⁴, and good endurance characteristics as high as 200 cycles. The above results suggested that a high‐performance OFET memory device could be facilely achieved using the novel crosslinkable high‐k copolymers. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016 , 54, 3224–3236     

Synthesis and properties of phenothiazylene vinylene‐based polymers: New organic semiconductors for field‐effect transistors and solar cells

A series of new phenothiazylene vinylene‐based semiconducting polymers, poly[3,7‐(4′‐dodecyloxyphenyl)phenothiazylene vinylene] ( P1 ), poly[3,7‐(4′‐dodecyloxyphenyl)phenothiazylene vinylene‐alt‐1,4‐phenylene vinylene] ( P2 ), and poly[3,7‐(4′‐dodecyloxyphenyl)phenothiazylene vinylene‐alt‐2,5‐thienylene vinylene] ( P3 ), have been synthesized via a Horner‐Emmons reaction. FTIR and ¹H NMR spectroscopies confirmed that the configurations of the vinylene groups in the polymers were all‐trans (E). The weight‐averaged molecular weights (M_w) of P1 , P2 , and P3 were found to be 27,000, 22,000, and 29,000, with polydispersity indices of 1.91, 2.05, and 2.25, respectively. The thermograms for P1 , P2 , and P3 each contained only a broad glass transition, at 129, 167, and 155 °C, respectively, without the observation of melting features. UV–visible absorption spectra of the polymers showed two strong absorption bands in the ranges 315–370 nm and 450–500 nm, which arose from absorptions of the phenothiazine segments and the conjugated main chains. Solution‐processed field‐effect transistors fabricated from these polymers showed p‐type organic thin‐film transistor characteristics. The field‐effect mobilities of P1 , P2 , and P3 were measured to be 1.0 × 10^?4, 3.6 × 10^?5, and 1.0 × 10^?3 cm² V^?1 s^?1, respectively, and the on/off ratios were in the order of 10² for P1 and P2 , and 10³ for P3 . Atomic force microscopy and X‐ray diffraction analysis of thin films of the polymers show that they have amorphous structures. A photovoltaic device in which a P3 /PC₇₁BM (1/5) blend film was used as the active layer exhibited an open‐circuit voltage (V_OC) of 0.42 V, a short circuit current (J_SC) of 5.17 mA cm^?2, a fill factor of 0.35, and a power conversion efficiency of 0.76% under AM 1.5 G (100 mW cm^?2) illumination. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 48: 635–646, 2010     

Narrow band gap D–A copolymer of indacenodithiophene and diketopyrrolopyrrole with deep HOMO level: Synthesis and application in field‐effect transistors and polymer solar cells

A novel fused ladder alternating D–A copolymer, PIDT–DPP, with alkyl substituted indacenodithiophene (IDT) as donor unit and diketopyrrolopyrrole (DPP) as acceptor unit, was designed and synthesized by Pd‐catalyzed Stille‐coupling method. The copolymer showed good solubility and film‐forming ability combining with good thermal stability. PIDT–DPP exhibited a broad absorption band from 350 to 900 nm with an absorption peak centered at 735 nm. The optical band gap determined from the onset of absorption of the polymer film was 1.37 eV. The highest occupied molecular orbital level of the polymer is as deep as ?5.32 eV. The solution‐processed organic field‐effect transistor (OFETs) was fabricated with bottom gate/top contact geometry. The highest FET hole mobility of PIDT–DPP reached 0.065 cm² V^?1 s^?1 with an on/off ratio of 4.6 × 10⁵. This mobility is one of the highest values for narrow band gap conjugated polymers. The power conversion efficiency of the polymer solar cell based on the polymer as donor was 1.76% with a high open circuit voltage of 0.88 V. To the best of our knowledge, this is the first report on the photovoltaic properties of alkyl substituted IDT‐based polymers. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012     

Perylene diimide copolymers with dithienothiophene and dithienopyrrole: Use in n‐channel and ambipolar field‐effect transistors

Solution‐processable polymers consisting of perylene diimide (PDI) acceptor moieties alternating with dithienothiophene (DTT), N‐dodecyl‐dithienopyrrole (DTP), or oligomers of these donor groups have been synthesized. We have, in addition to varying the donor, varied the N,N′ substituents of the PDIs. The thermal, optical, electrochemical, and charge‐transport properties of the polymers have been investigated. The polymers show broad absorption extending from 300 to 1000 nm with optical band gaps as low as 1.2 eV; the band gap decreases with increasing the conjugation length of donor block, or by replacement of DTT by DTP. The electron affinities of the polymers, estimated from electrochemical data, range from ?3.87 to ?4.01 eV and are slightly affected by the specific choice of donor moiety, while the estimated ionization potentials (?5.31 to ?5.92 eV) are more sensitive to the choice of donor. Bottom‐gate top‐contact organic field‐effect transistors based on the polymers generally exhibit n‐channel behavior with electron mobilities as high as 1.7 × 10^–2 cm²/V/s and on/off ratios as high as 10⁶; one PDI‐DTP polymer is an ambipolar transport material with electron mobility of 4 × 10^–4 cm²/V/s and hole mobility of 4 × 10^–5 cm²/V/s in air. There is considerable variation in the charge transport properties of the polymers with the chemical structures. © 2013 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013     

Linking polythiophene chains with vinylene‐bridges: A way to improve charge transport in polymer field‐effect transistors

A series of novel branched polythiophene derivatives bearing different densities of vinylene‐bridges as linking chains were synthesized by a general synthetic strategy. The organic field‐effect transistors, which were fabricated by spin‐coating the polymer solutions onto octadecyltrichlorosilane‐modified SiO₂/Si substrates with top‐contact configuration, afforded a high mobility of 8.0 × 10^?3 cm² V^?1 s^?1 with an on/off ratio greater than 10⁴ and a threshold voltage of about ?3 V in saturation regime. The devices based on these polymers possessed better performance than those of polymers without conjugated bridges and polymers with longer conjugated bridges. These results demonstrated that the combination of conjugated polythiophene backbones and vinylene‐bridges would improve the carrier mobility. As an emerging class of conjugated materials, polymers with vinylene‐bridges as linking chains would open up new opportunities in organic electronics, and their applications in organic electronics are promising. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 1381–1392, 2009     

High performance polymer field‐effect transistors based on polythiophene derivative with conjugated side chain

Poly(3‐[2‐(5‐hexyl‐2‐thienyl) ethenyl]‐2,2′‐bithiophene) ( P2 , see Scheme 1 ) with conjugated thienylvinyl side chain was synthesized by copolymerization of the thiophene units with and without conjugated side chain with Pd‐catalyzed Stille coupling method. For comparison, P1 with the hexyl side chain instead of conjugated side chain was also synthesized. P2 film shows broad absorption in the visible region with absorption edge at about 700 nm. The solution‐processed polymer field‐effect transistors were fabricated and characterized with bottom gate/top contact geometry. The organic field‐effect transistors (OFET) based on P2 showed an average hole mobility of about 0.034 cm²/Vs (the highest value reached 0.061 cm²/Vs) upon annealing at about 180 °C for 30 min, with a threshold voltage of ?1.15 V and an on/off ratio of 10⁴ with n‐octadecyltrichlorosilane (OTS) modified SiO₂ substrate. In comparison, the OFET based on P1 displayed a hole mobility of 8.9 × 10^–4 cm²/Vs and an on/off ratio of 10⁴ with OTS modified SiO₂ substrate. The results indicate that the polythiophene derivative with conjugated thienylvinyl side chain is a promising polymer for the application in polymer field‐effect transistors. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 5304–5312, 2009     

Two dibenzo[Def,Mno]chrysene‐based polymeric semiconductors: Surprisingly opposite device performances in field‐effect transistors and solar cells

A new series of conjugated polymers containing dibenzo[def, mno]chrysene units were successfully designed and synthesized to investigate their physical properties and device performances in field‐effect transistors and photovoltaic cells. Two polymers, namely poly(4,10‐bithiophene‐6,12‐bis(2‐decyltetradecyloxy)‐dibezo[def, mno]chrysene) ( PTTC) and poly(2,2′‐thiophenevinylenthiophene‐4,10‐[6,12‐bis(2‐decyltetradecyloxy)‐dibenzo[def, mno]chrysene]) ( PTVTC) , exhibited similar light absorption, electrochemical characteristics, and theoretical electronic structures. However, they behaved very differently when used in thin‐film transistors and solar cells. The PTTC polymer with two thiophene groups had better charge transport behavior, whereas the PTVTC polymer with two thiophene units connected by a vinyl group exhibited higher efficiency in bulk heterojunction photovoltaic cells. These results were discussed in terms of their nanostructural bulk morphologies established from transmission electron microscopy and two‐dimensional grazing incidence wide angle X‐ray scattering analyses. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016 , 54, 2559–2570     

Field‐effect transistors based on PPV derivatives as a semiconducting layer

A series of modified thiophene groups containing PPV‐based semiconducting materials, poly[(2,5‐bis(octyloxy)‐1,4‐phenylenevinylene)‐alt‐(2,2′bithienylenevinylene)] ( PPBT ), poly[(2,5‐bis(octyloxy)‐1,4‐phenylenevinylene)‐alt‐(5,5‐thiostilylenevinylene)] ( PPTVT ), have been synthesized through a Horner coupling reaction. From the FTIR and ¹H NMR spectroscopy, the configuration of the vinylene groups in the polymers was all trans (E) geometry. The weight‐average molecular weights (M_w) of PPBT and PPTVT were found to be 11,700 and 11,800, with polydispersity indices of 2.51 and 2.53, respectively. PPBT and PPTVT thin films exhibit UV–visible absorption maxima at 538 and 558 nm, respectively, and the strong absorption shoulder peaks at 578 and 602 nm, respectively. Solution processed field‐effect transistors (FET) fabricated using all the polymers showed p‐type OTFT characteristics. The field‐effect mobility of the PPTVT was obtained up to 2.3 × 10^?3 cm² V^?1 s^?1, an on/off ratio of 1.0 × 10⁵ with ambient air stability. Studies of the atomic force microscopy (AFM) and X‐ray diffraction (XRD) analysis of the polymer thin films revealed that all the polymers were amorphous structure. The greater planarity and rigidity of PPTVT compared to PPBT results in elongation of conjugation length and better π–π stacking of polymer chains in amorphous region, which leads to improved FET performance. © 2008 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 111–120, 2009     

Synthesis,characterization, and field‐effect transistor performance of poly[2,6‐bis(3‐tridecanoxythiophen‐2‐yl)benzo[1,2‐b;4,5‐b′]dithiophene]

A new copolymer of benzo[1,2‐b:4,5‐b′]dithiophene and 3,3′‐bis(tridecanoxy)‐5,5′‐bithiophene was synthesized through Stille copolymerization. The bis‐(3‐alkoxythiophene) monomer was synthesized through a silver fluoride mediated, palladium‐catalyzed cross‐coupling, in which bromide functional groups were preserved instead of consumed. The copolymer has been characterized and applied in field‐effect transistors, giving a hole mobility of 2 × 10^?3 cm²/Vs and an on/off ratio >10⁶, with negligible hysteresis, on standard silicon substrates. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 48: 1973–1978, 2010     

Twisted olefinic building blocks for low bandgap polymers in solar cells and ambipolar field‐effect transistors

A series of polymers based on 8,8′‐biindeno[2,1‐b]thiophenylidene for use in photovoltaic devices and field‐effect transistors are reported. These structurally twisted olefins are effective building blocks for preparation of low bandgap polymers with optical bandgaps of 1.2–1.5 eV. Device performance, such as V_oc and J_sc, in solar cell devices could be successfully modulated by incorporation of a variety of comonomers. Ambipolar properties in field‐effect transistors using Au electrodes were also studied, with PtBTPDPP exhibiting balanced charge transport properties with hole and electron mobilities of 0.09 and 0.12 cm²·V^?1·s^?1, respectively. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016 , 54, 889–899     

Regioirregular ambipolar naphthalenediimide‐based alternating polymers: Synthesis,characterization, and application in field‐effect transistors

In this work, we report the synthesis, characterization, and application of two regioirregular naphthalenediimide (NDI)‐based alternating conjugated polymers, namely P1 and P2 , in which nitrile‐substituted moiety, 2,3‐bis(thiophen‐2‐yl)acrylonitrile and NDI moiety act as donor and acceptor unit, respectively. The two regioirregular polymers possess low‐lying LUMO energy levels of ?3.92 eV for P1 and ?3.96 eV for P2 . Both polymers possess typical dual‐band UV?Vis?NIR absorption profiles of NDI‐based polymers, and show broadened and red‐shifted absorption spectra in the solid state compared with those in solutions. Field‐effect transistor devices with top‐gate bottom‐contact configuration were used to evaluate the polymers' semiconducting properties. The two polymers exhibited promising and air‐stable ambipolar charge transport characteristics. Thin film microstructure investigations (AFM and 2D‐GIXRD) suggest both polymers formed continuous and smooth thin films, and adopted predominantly face‐on molecular packing in the solid state. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2017 , 55 , 3627–3635     

Influence of molecular weight on the short‐channel effect in polymer‐based field‐effect transistors

In this study, we demonstrate how the intrinsic properties of a polymer can influence the electrical characteristics of organic field‐effect transistors (OFETs). OFETs fabricated with three batches of poly[2‐methoxy,5‐(3′,7′‐dimethyl‐octyloxy)]‐p‐phenylene vinylene (MDMO‐PPV) were investigated. The properties of the polymers were initially investigated using Fourier transform infrared spectroscopy (FTIR), impedance spectroscopy (IS), gel permeation chromotography (GPC), and cyclic voltammetry (CV), respectively. The structure and purity of the polymer batches were found to be very comparable, but the molecular weight (M_n and M_w) and polydispersity (PDI = M_w/M_n), varied between the samples and the HOMO and LUMO levels of the polymers were found to depend on the molecular weight properties. OFETs were then fabricated with the polymers and electrically characterized. It was observed that the channel current and the field‐effect mobility increase with increasing polymer molecular weight. The output characteristics of the transistors, on the other hand, were found to depend on the PDI of the polymer. Saturation of the channel current occurs at higher source–drain voltages and short‐channel behavior was observed to start at longer channel lengths for polymers with a higher PDI. This behavior is observed to be thickness dependent, and the short‐channel behavior was more pronounced for thicker MDMO‐PPV films. These results are explained in terms of influences of chain packing and ordering and high bulk currents on the FET output and transistor parameters. © 2011 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 50: 117–124, 2012     

High performance semiconducting polymers containing bis(bithiophenyl dithienothiophene)‐based repeating groups for organic thin film transistors

New dithienothiophene‐containing conjugated polymers, such as poly(2,6‐bis(2‐thiophenyl‐3‐dodecylthiophene‐2‐yl)dithieno[3,2‐b;2′,3′‐d]thiophene, 4 and poly(2,6‐bis (2‐thiophenyl‐4‐dodecylthiophene‐2‐yl)dithieno[3,2‐b;2′,3′‐d]thiophene, 8 have been successfully synthesized via Stille coupling reactions using dodecyl‐substituted thiophene‐based monomers, bistributyltin dithienothiophene, and bistributyltin bithiophene; these polymers have been fully characterized. The main difference between the two polymers is the substitution position of the dodecyl side chains in the repeating group. Grazing‐incidence X‐ray diffraction (GI‐XRD) gave clear evidence of edge‐on orientation of polycrystallites to the substrate. The semiconducting properties of the two polymers have been evaluated in organic thin film transistors (OTFTs). The two conjugated polymers 4 and 8 exhibit fairly high hole carrier mobilities as high as μ_ave = 0.05 cm²/Vs (I_ON/OFF = 3.42 × 10⁴) and μ_ave = 0.01 cm²/Vs, (I_ON/OFF = 1.3 × 10⁵), respectively, after thermal annealing process. The solvent annealed films underwent reorganization of the molecules to induce higher crystallinity. Well‐defined atomic force microscopy (AFM) topography supported a significant improvement in TFT device performance. The hole carrier mobilities of the solvent annealed films are comparable to those obtained for a thermally annealed sample, and were one‐order higher than those obtained with a pristine sample. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2010     

EDOT‐diketopyrrolopyrrole copolymers for high bulk hole mobility and near infrared absorption

To obtain novel low‐bandgap materials with tailored hole‐transport properties and extended absorption, electron rich 3,4‐ethylenedioxythiophene is introduced as a comonomer in diketopyrrolo[3,4‐c]pyrrole copolymers with different aryl flanking units. The polymers are characterized by absorption and photoluminescence spectroscopy, dynamic scanning calorimetry, cyclic voltammetry, and X‐ray diffraction. The charge transport properties of these new materials are studied carefully using an organic field effect transistor geometry where the charge carriers are transported over a narrow channel at the semiconductor/dielectric interface. These results are compared to bulk charge carrier mobilities using space‐charge limited current (SCLC) measurements, in which the charge carrier is transported through the complete film thickness of several hundred nanometers. Finally, charge carrier mobilities are correlated with the electronic structure of the compounds. We find that in particular the thiophene‐flanked copolymer PDPP[T]₂‐EDOT is a very promising candidate for organic photovoltaics, showing an absorption response in the near infrared region with an optical bandgap of 1.15 eV and a very high bulk hole mobility of 2.9 × 10^?4 cm² V^?1 s^?1 as measured by SCLC. This value is two orders of magnitudes higher than SCLC mobilities reported for other polydiketopyrrolopyrroles and is in the range of the well‐known hole transporting polymer poly(3‐hexylthiophene). © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 639–648     

Effect of thiophene spacers in benzodithiophene‐based polymers for organic electronics

Poly{2,6‐bis(thiophene‐2‐yl)‐4,8‐bis(5‐dodecylthiophen‐2‐yl)benzo[1,2‐b :4,5‐b' ]dithiophene} [poly(Th‐bDTBDT‐Th)] was successfully synthesized through Stille coupling polymerization. The addition of the thiophene spacer groups between the benzodithiophene units resulted in improved performance in optoelectronic devices. This was attributed to the reduced lamellae stacking distance in thin film with prominent π–π stacking peak indicating close assembly of poly(Th‐bDTBDT‐Th). Spacing between the benzodithiophene units in poly(Th‐bDTBDT‐Th) helped the close packing of dodecyl chains and generated improved π stacking interaction. For poly(Th‐bDTBDT‐Th), the measured average field effect mobility was 2.32 × 10^?3 cm² V^?1 s^?1 and average hole mobility in vertical direction was 2.92 × 10^?5 cm² V^?1 s^?1. Charge transport in both directions was improved by one order of magnitude with the presence of the thiophene spacer. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2017 , 55 , 3942–3948