A very thin (250 nm), highly conductive (annealed), non‐texturized DC‐sputtered aluminum‐doped zinc oxide layer (ZnO:Al) deposited on a textured glass is used as substrate for thin‐film silicon solar cells. Compared to the classical approach, where wet‐chemically texturized ZnO:Al on planar glass is used, this approach allows a reduction in the as‐deposited ZnO:Al thickness of almost 70% while at the same time, thanks to the good light trapping capability of the glass texture the efficiency of the cells was maintained at the high level of 10.9%.
Optically transparent and high‐quality hybrid ZnO nanoparticle and anthracene embedded polyphenylsiloxane (PPS) glass films were spin‐coated on quartz substrates. A strong Förster resonant energy transfer (FRET) process was indicated by the observation of quenching of the ZnO emission and an enhancement of the anthracene emission at room temperature. The efficiency of this energy transfer between ZnO and the S1 vibronic states of the anthracene molecules can be optimized to exceed 90%.
Persistent layer‐by‐layer growth is demonstrated for pulsed‐laser homoepitaxy of ZnO thin films on $(000\bar 1)$ ZnO single crystals. Employing interval pulsed‐laser deposition (PLD), RHEED oscillations are stabilized over a film thickness of about 90 nm. For interval pulsed laser deposited films a considerably decreased root‐mean‐square surface roughness of 0.26 nm was found, in comparison to 0.74 nm for conventional PLD. A small asymmetry in the X‐ray diffraction (XRD) 2θ –ω scan reveals compressive strain in the thin film being slightly larger for interval PLD as compared to conventional PLD. The FWHM of the photoluminescence (PL) I6 line is higher with about 500 µeV as compared to 350 µeV for the conventional PLD. Consequently, both XRD as well as PL indicate a slightly higher amount of charged defects for the interval PLD.
Write‐once–read‐many‐times memory (WORM) devices were fabricated using Ti/Au and Au as top contacts on ZnO thin films on Si. Electrical characterization shows that both types of WORM devices have large resistance OFF/ON ratio (R ratio), small resistance distribution range, long retention and good endurance. WORM devices with Au top contact have better performance of higher R ratio because of a larger work function of Au compared to Ti.
Epitaxial TiC/SiC multilayers were grown by magnetron sputtering at a substrate temperature of 550 °C, where SiC is normally amorphous. The epitaxial TiC template induced growth of cubic SiC up to a thickness of ～2 nm. Thicker SiC layers result in a direct transition to growth of the metastable amorphous SiC followed by renucleation of nanocrystalline TiC layers.
ZnO thin films with a rippled surface structure were used as electron‐collecting layers of inverted organic photovoltaics (OPVs). Using additional ultrathin layers of ZnO and TiO2 fabricated using atomic layer deposition (ALD), not only the power‐conversion efficiency of the OPVs could be increased (up to 3.5%), but also the photovoltaic performance became nearly constant within 100 days without any additional encapsulations of the solar cells under ambient conditions.
We propose a theory of thin film photovoltaics in which one of the polycrystalline films is made of a pyroelectric material grains such as CdS. That film is shown to generate strong polarization improving the device open circuit voltage. Implications and supporting facts for the major photovoltaic types based on CdTe and CuIn(Ga)Se2 absorber layers are discussed.
We report on wet etching of photomodified regions in crystalline sapphire using KOH solution. Tightly focused femtosecond laser pulses (150 fs at 800 nm wavelength) were used to create void structures enclosed in an amorphised sapphire shell inside the bulk of a crystalline host. The diameter of the amorphous regions can be controlled by pulse energy and was typically 0.5–1.5 µm. The etching rate depends on the distance between adjacent irradiation spots, pulse energy, concentration of etchant and ultrasonic agitation.
A facile metal catalyst free route to synthesize boron doped (0.6%–1.0%) carbon nanotubes via ceramic nanowires in which the formation of the nanowires (probably serving as templates), the carbon nanotubes and their doping all occur unanimously in the reaction, is presented.
This Letter reports on the assembly on the tip of an optical fibre of a metamaterial film fabricated by a self‐assembly bottom‐up method, composed of silver nanowires embedded in an alumina matrix. By illuminating the film through the fibre in a reflection configuration, we observe experimentally the optical response of the metamaterial in agreement with theoretical predictions and interpreted as the excitation of surface plasmon‐polaritons in the cylindrical surface of the nanowires. These results pave the way for low‐cost optical fibre devices that incorporate metamaterial films.
We report on solution‐processible polymer solar cells (PSCs) fabricated on a papery substrate using carton. Highly conductive PEDOT:PSS was used as a bottom anode and planarization layer, and a semi‐transparent top cathode was applied. This research could be an important approach to the development of all‐solution‐processible papery PSCs as well as paper electronics.
Steady‐state and time‐resolved photoluminescence of silicon nanoparticles dispersed in low‐polar liquids at above room temperature is studied. The roles of low‐polar liquids as well as mechanisms responsible for their temperature‐dependent photoluminescence are discussed. The thermal sensitivity of the photoluminescence is estimated and application of the nanoparticles as nanothermometers is proposed.
We report a very simple and novel approach to produce anodic TiO2 nanotube arrays with highly defined and ordered tube openings. It is based on carrying out anodization through a slowly soluble photoresist coating. This eliminates the formation of undesired initiation layers on the tube tops and protects them to a certain extent from etching by the electrolyte.
High‐speed solution shearing, in which a drop of dissolved material is spread by a coating knife onto the substrate, has emerged as a versatile, yet simple coating technique to prepare high‐mobility organic thin film transistors. Solution shearing and subsequent drying and crystallization of a thin film of conjugated molecules is probed in situ using microbeam grazing incidence wide‐angle X‐ray scattering (μGIWAXS). We demonstrate the advantages of this approach to study solution based crystal nucleation and growth, and identify casting parameter combinations to cast highly ordered and laterally aligned molecular thin films.
ZnO thin films were grown homoepitaxially on O‐face ZnO single crystals by pulsed‐laser deposition. The ZnO substrates grown by the hydrothermal method were heat‐treated in oxygen ambient at 1000 °C for 2 h prior to deposition. After the thermal treatment the substrates show bilayer steps between 200–400 nm wide terraces and a considerably improved crystalline structure. Thin film surfaces exhibit closed loop spirals and show steps of c /2 or c. The FWHM of the (0002) rocking curve of the best sample is 29″. Similar to the substrates used, Al is contained in the thin films (<1014 cm–3) as photoluminescence (PL) and thermal admittance spectroscopy suggest. However, deep levels between 200 and 400 meV below the conduction band are the dominant donors at room temperature. Low temperature PL is dominated by (Al0,X) (I6, FWHM: 200 µeV) and extremely homogeneous (σ ≈ 1%).
Nanostructures formed in a titanium dioxide (TiO2)–poly(styrene)‐block‐poly(ethyleneoxide) nanocomposite film on top of fluor‐doped tin oxide (FTO) layers are investigated. The combinatorial approach is based on probing a wedge‐shaped FTO‐gradient with grazing incidence small angle X‐ray scattering (GISAXS) in combination with a moderate micro‐focus X‐ray beam. The characteristic lateral length is given by adjacent nanowire‐shaped TiO2 regions. It decreases from 200 nm on the thick FTO layer to 90 nm on the bare glass surface.
Semipolar (11\bar 2 \bar 2) ZnO was successfully grown on (112) LaAlO3/(LaAlO3)0.29(Sr2AlTaO6)0.35 substrate by pulsed laser deposition. The epitaxial relationship is [11\bar 23]_{\rm ZnO} // [11\bar 1]_{\rm LAO/LSAT} with the polar axis of [000\bar 1]_{\rm ZnO} pointing to the surface. For ZnO films with thickness of 1.6 μm, the threading dislocation density is ～1 × 109 cm–2, and the density of basal stacking faults is below 1 × 104 cm–1. The (11\bar 2 \bar 2) ZnO exhibits strong D0X emissions with a FWHM of 9 meV and very few green–yellow emissions in the low‐temperature (10 K) and room‐temperature photoluminescence spectra, respectively.
We present the synthesis of highly crystalline metallic rhenium trioxide (ReO3) nanowires via a simple physical vapor transport at 300 °C for the first time. Based on HRTEM, the ReO3 nanowires exhibit a core of perfect cubic perovskite‐type single crystal structure with a shell of thin amorphous and disordered structures of less than 2 nm in the near surface layers. Possibly this is due to proton intercalation induced by the surface reaction of single crystal ReO3 with water.
