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B. N. Kuznetsov V. M. Perov A. M. Alekseyev D. L. Astanovsky V. I. Yakerson 《Reaction Kinetics and Catalysis Letters》1999,67(1):89-93
The change in the carbon content on the surface of Fe, Cu, Ni containing catalysts has been studied by X-ray Photoelectron
Spectroscopy (XPS) under different treatments. It has been concluded that the superficial carbon content affects the content
of an active element,e.g. copper, on the catalyst surface. 相似文献
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《Surface and interface analysis : SIA》2003,35(2):184-187
The interfacial reaction between ultrathin Co film and substrate Si(100) was studied by in situ XPS using monochromatized Al Kα. When the Co is deposited on Si(100) at room temperature, CoSi2 is formed during the initial stage of Co deposition and then metallic Co starts to grow sequentially. For 8 ML Co deposition on Si(100) the interfacial reaction layer is relatively thin compared with the pure Co overlayer, which is not involved in the interfacial reaction in depth. The Co layers change rapidly to CoSi layers after annealing at 270°C, and then CoSi2 layers form after annealing at 540°C for 2 min. The CoSi2 layers are changed to CoSi2 islands by post‐annealing at >650°C. Copyright © 2003 John Wiley & Sons, Ltd. 相似文献
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测定了一系列氧化物的电子结合能,显示了铋系超导体与二元氧化物衬底材料的化学反应性可以用固态酸碱反应理论来描述,其反应性大小除了可以用衬底氧化物的酸碱参数估计以外,还可以用衬底氧化物氧离子的内层电子结合能估计. 相似文献
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用XPS测定了含P、Ce、La的Ni基合金的费米能级及各元素的芯级电子结合能,讨论了合金的电子结构以及它与析氢反应的电催化活性即析氢超电势之间的联系。结果表明:合金中各元素的原子间存在着电荷传输,它对析氢反应活性起重要作用。 相似文献
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研究水蒸气对不同赋存形态氮在热解过程中析出及转化规律有利于精细化调控氮氧化物的生成。利用X射线光电子能谱(XPS)仪分析了典型烟煤及其煤焦中氮的赋存形态,研究了温度、水蒸气浓度等因素对煤焦炭氮析出及转化特性的影响。结果表明,温度的升高以及一定范围内水蒸气浓度的增加有利于焦炭氮的析出,水蒸气浓度达到30%时,焦炭氮析出达到峰值;水蒸气的存在有利于煤焦中N-5和N-6等含氮结构物质从煤焦中析出,同时抑制N-Q和N-X等含氮结构物质的裂解。这是由于水蒸气的气化作用有利于芳香结构的分解,但同时高水蒸气浓度带来的H基团会与N-6结合从而形成N-Q,而由高水蒸气浓度带来的OH基团会促进N-6的氧化而生成N-X。 相似文献
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氨基硅烷/马来酸酐接枝聚丙烯界面化学反应的研究 总被引:1,自引:0,他引:1
利用溶剂萃取与红外光谱(IR)、光电子能谱(XPS)技术研究了化学键接在玻璃纤维表面的硅烷偶联剂与接枝聚丙烯间的界面化学反应。结果表明:溶剂萃取可以除去玻璃纤维/树脂界面区物理结合的聚合物基体,减少基体信号的影响,在此基础上,利用IR、XPS可以直接证明氨基硅烷(APS)与马来酸酐接枝聚丙烯(MA-g-PP)间发生了界面化学反应,生成了含酰胺基的反应产物。进一步对不同化学状态的N1s的XPS定量分析发现,尽管APS在玻纤表面以开环直链和以氢键结合的环状两种结构形式存在,但在界面上主要是无环开链结构中的氨基与酸酐发生反应。 相似文献
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The effects of the Pt diffusion barrier layer on the interface diffusion and reaction, crystallization, dielectric and ferroelectric properties of the PZT/Si(111) sample have been studied using XPS, AES and XRD techniques. Hie results indicate that the Pt diffusion barrier layer between the PZT layer and the Si substrate prohibits the formation of TiCx TiSix and SiO2 species in the PZT layer. The Pt barrier layer also completely interrupts the diffusion of Si from the Si substrate into the PZT layer and impedes the diffusion of oxygen from air to the Si substrate greatly. Although the Pt layer can not prevent completely the diffusion and reaction between oxygen and silicon, it can prevent the formation of a stable SiO2 interface layer on the interface of PZT/Si. The Pt layer reacts with silicon to form PtSix species on the interface of Pt/Si, which can intensify the chemical binding strength between the Pt layer and the Si substrate. To play a good role as a diffusion barrier layer, the Pt barrier layer 相似文献
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L. P. Dai G. J. Zhang S. Y. Wang Z. Q. Zhong G. Wang 《Surface and interface analysis : SIA》2012,44(5):565-568
Reactive ion etching (RIE) was used to etch bismuth zinc niobate (BZN) films in SF6/ Ar plasma as a function of radio frequency (RF) power. Within the RF power range of choice, the etch rate of BZN films increases with increasing RF power. However, when RF power exceeds 200 W, the etch rate of films appears to increase at a slower rate. The structural properties of the BZN films before and after etching were characterized using X‐ray diffraction. As‐deposited film shows a cubic pyrochlore structure with preferential (222) plane orientation, but all the films etched at different reactive ion etching powers exhibit preferential (400) plane orientation. With increasing RF power, the ZnF2 phase becomes evident. Also, the film surfaces before and after etching were analysed using XPS. Metal fluorides were found to remain on the surface, resulting in varying relative atomic percentages with RF power. Zn‐rich surfaces were formed because low‐volatile ZnF2 residues were difficult to remove. Bi and Nb can be removed easily through chemical reactions because of their high volatility, whereas Bi–F and Nb–F, which were thought to be present in the form of a metal oxyfluoride, can still be detected using the narrow scan spectra. RF power has an effect on etch reaction through different plasma densities and particle energies, thus resulting in varying compositions and element chemical binding states. RF power also has an effect on the removal of residues. The minimum value of F atomic concentration is achieved at 150 W. Copyright © 2011 John Wiley & Sons, Ltd. 相似文献
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The interface diffusion and chemical reaction between a PZT (PbZrxTi1-xO3) layer and a Si(111) substrate during the annealing treatment in air have been studied by using XPS (X-Ray Photoelectron Spectroscopy) and AES (Auger Electron Spectroscopy). The results indicate that the Ti element in the PZT precursor reacted with residual carbon and silicon, diffused from the Si substrate, to form TiCx, TiSix species in the PZT layer during the thermal treatment. A great interface diffusion and chemical reaction took place on the interface of PZT Si also. The silicon atoms diffused from silicon substrate onto the surface of PZT layer. The oxygen atoms, which came from air, diffused into silicon substrate also and reacted with Si atoms to form a SiO2 interlayer between the PZT layer and the Si (111) substrate. The thickness of SiO2 interlayer was proportional to the square root of treatment time. The formation of the SiO2 interlayer was governed by the diffusion of oxygen in the PZT layer at low annealing tempera 相似文献
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LiNi0.3Co0.7O2的结构及其锂电池行为的研究 总被引:4,自引:0,他引:4
章福平 《高等学校化学学报》1995,16(5):770-774
利用XRD、XPS、CV等方法研究了LiNi0.3Co0.7O2的结构及其锂电池行为。结果表明:LiNi0.3Co0.7O2具有六方晶系空间群结构,其晶胞参数a=0.2826nm,c=1.4130nm;其表面存在Li2O;Li+在其中的化学扩散系数为1~7×10-8cm2·s-1;其锂电池在4.30~3.00V间放电容量可达120~140mA·h·g-1,放电机理为Li+在其中进行两步嵌入反应。 相似文献
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Two kinds of residues, obtained from extraction of one weakly reductive coal, Shenfu-Dongsheng coal (SD), and one reductive coal, Pingshuo coal (PS), with sub- and supercritical water on a semi-continuous apparatus, were characterized by calorific value analysis and XPS analysis, and the combustion behaviors of residues were investigated by thermogravimetric analysis. The results show that the residues have higher calorific value than raw coal samples, and SD residue has higher calorific value than PS residue. C-C, C-O and pyridinic nitrogen, pyrrolic nitrogen are the dominant form of C, O and N on the surface of raw coal samples and their extraction residues. The combustion behaviors of extraction residues show that the SD residue is more reactive and more easily burned than PS residue. 相似文献
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壳聚糖钯催化Heck反应合成肉桂酸丁酯的研究 总被引:12,自引:0,他引:12
以天然高分子壳聚糖为载体,制得了用于Heck反应的壳聚糖钯配合物多相催化剂,用XPS对其结构进行了表征,并利用正交实验方法考察了原料配比、缚酸剂三乙胺的用量、反应温度、反应时间和催化剂的用量对碘代苯与丙烯酸丁酯Heck反应的影响.结果表明:反应因素的影响大小为:反应温度>原料配比>三乙胺用量>催化剂的用量>反应时间;在最佳的反应条件下:碘代苯与丙烯酸丁酯的摩尔比为1∶1、三乙胺9mmol、催化剂0.1g(钯含量1.88×10-2mmol)时,氮气保护下140℃反应8h,肉桂酸丁酯的产率可高达99.8%.并且该催化剂对其它丙烯酸酯的Heck反应也具有良好的催化活性. 相似文献
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温度和时间对有机合成反应影响的探讨 总被引:1,自引:0,他引:1
根据物理化学和有机合成原理,从动力学、热力学、反应机理及溶解度等各方面详细分析了反应温度和反应时间对有机合成反应的影响。通过这些分析,可以让同学们更好地在合成反应课程的学习中掌握和分析反应温度和反应时间对反应的影响。 相似文献
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Growth of magnetron sputtered Pt/CeO2 thin films on Si and Si3N4 were characterized by X‐ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and X‐ray photoelectron spectroscopy (XPS). Interaction of Pt/CeO2 films with Si on Si and Si3N4 substrates was extensively investigated by XPS. XRD studies show that films are oriented preferentially to (200) direction of CeO2. XPS results show that Pt is mainly present in +2 oxidation state in Pt/CeO2/Si film, whereas Pt4+ predominates in Pt/CeO2/Si3N4 film. Concentration of Pt4+ species is more than four times on Si3N4 substrate as compared with that on Si. Ce is present as both +4 and +3 oxidation states in Pt/CeO2 films deposited on Si and Si3N4 substrates, but concentration of Ce3+ species is more in Pt/CeO2/Si film. Interfacial reaction between CeO2 and Si substrate is controlled in the presence of Pt. Pt/Ce concentration ratio decreases in Pt/CeO2/Si3N4 film upon successive sputtering, whereas this ratio decreases initially and then increases in Pt/CeO2/Si film. Copyright © 2015 John Wiley & Sons, Ltd. 相似文献
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从纳米BaTiO3载体、Ni/B和Ni—La/B催化剂的XPS谱图中可以看出,Ni、La的引入对BaTiO3中Ti、Ba的电子结合能影响不大,峰形基本未发生变化,说明浸渍法制备的催化剂基本不改变基体BaTiO3的结构。从结合能数值变化可以看出,稀土助剂的加入使得催化剂中镍元素的结合能减小,产生了负位移,增大了表面Ni电子的密度,稀土掺杂与稀土作助剂一样,使镍的电子密度增加。采用溶胶-凝胶法制备的催化剂与浸渍法制备的催化剂相比较,Ba、Ti和O三元素的结合能基本上没有发生偏移。XPS在NLBT催化剂检测中没有明显检测出稀土La的存在。 相似文献
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