Characterization of silver selenide thin films grown on Cr‐covered Si substrates

Thermal stability of silver selenide thin films formed from the solid‐state reaction of Ag‐Se diffusion couples on Si substrates covered with a thin Cr film, is investigated. Glancing angle X‐ray diffraction (GXRD), XPS, atomic force microscopy (AFM) and Rutherford backscattering spectrometry (RBS) are used to characterize the as‐deposited films and those annealed at 100, 200, 300, and 400 °C. The results reveal the formation of polycrystalline orthorhombic silver selenide films that remain stable without compositional change upon thermal annealing, in marked contrast to the agglomeration exhibited by silver selenide films deposited on Si without Cr film. The improvement in the thermal stability is attributed to compressive stress relief by a grainy morphology with large surface area, the formation of which is promoted by partially oxidized Cr adhesion film. Copyright © 2008 John Wiley & Sons, Ltd.     

Characterisation and properties of magnetron sputtered nanoscale bi‐layered Ni/Ti thin films and effect of annealing

Single‐bi‐layer of Ni–Ti thin film was deposited using DC and RF magnetron sputtering technique by layer‐wise deposition of Ni and Ti on Si(100) substrate in the order of Ni as the bottom layer and Ti as the top layer. The deposition of these amorphous as‐deposited thin films was followed by annealing at 300 °C, 400 °C, 500 °C, and 600 °C temperature with 1‐h annealing time for each to achieve crystalline thin films. This paper describes the fabrication processes and the novel characterization techniques of the as‐deposited as well as the annealed thin films. Microstructures were analysed using FESEM and HRTEM. Nano‐indentation and AFM were carried out to characterize the mechanical properties and surface profiles of the films. It was found that, for the annealing temperatures of 300 °C to 600 °C, the increase in annealing temperature resulted in gradual increase in atomic‐cluster coarsening with improved ad‐atom mobility. Phase analyses, performed by GIXRD, showed the development of silicide phases and intermetallic compounds. Cross‐sectional micrographs exhibited the inter‐diffusion between the two‐layer constituents, especially at higher temperatures, which resulted either in amorphization or in crystallization after annealing at temperatures above 400 °C. Copyright © 2015 John Wiley & Sons, Ltd.     

Effects of annealing on the surface structure of Ga‐isotope‐implanted single‐crystal ZnO

We studied the effects of Ga isotope implantation on surface structure using single‐crystal (0001) ZnO with an atomically flat surface. The surface morphology with steps and terraces was greatly changed by Ga implantation and post‐annealing: the step‐and‐terrace structure was suppressed by Ga implantation but a step‐and‐terrace structure appeared on the surface after post‐annealing at 900 °C for 4 min. The diffusion of Ga towards the surface through dislocation pipes at a density of up to 5 × 10⁸ cm^?2 was the dominant mechanism, and a significant amount of Ga moved from the implanted layer to the surface. The reaction between Ga and ZnO during post‐annealing appeared to improve sheet resistance and surface morphology. Copyright © 2005 John Wiley & Sons, Ltd.     

Electrical and structural properties of Pd/V/n‐type InP (111) Schottky structure as a function of annealing temperature

Palladium/Vanadium (Pd/V) Schottky structures are fabricated on n‐type InP (100) and the electrical, structural and surface morphological characteristics have been studied at different annealing temperatures. The extracted barrier height of as‐deposited Pd/V/n‐InP Schottky diode is 0.59 eV (I–V) and 0.79 eV (C–V), respectively. However, the Schottky barrier height of the Pd/V Schottky contact slightly increases to 0.61 eV (I–V) and 0.84 eV (C–V) when the contact is annealed at 200 °C for 1 min. It is observed that the Schottky barrier height of the contact slightly decreases after annealing at 300, 400 and 500 °C for 1 min in N₂ atmosphere. From the above observations, it is clear that the electrical characteristics of Pd/V Schottky contacts improve after annealing at 200 °C. This indicates that the optimum annealing temperature for the Pd/V Schottky contact is 200 °C. Basing on the auger electron spectroscopy and X‐ray diffraction results, the formation of Pd‐In intermetallic compound at the interface may be the reason for the increase of barrier height upon annealing at 200 °C. The formation of phosphide phases at the Pd/V/n‐InP interface could be the reason for the degradation in the barrier heights after annealing at 300, 400 and 500 °C. From the AFM results, it is evident that the overall surface morphology of the Pd/V Schottky contacts is fairly smooth. Copyright © 2011 John Wiley & Sons, Ltd.     

Influence of bath temperatures on the wettability of copper films surface prepared by electroless plating method on beech wood

Copper films were coated on beech wood substrates by electroless plating method. The influence of bath temperature on the copper films properties was studied by varying the bath temperatures 25, 35, 45 and 55 °C. Scanning electron microscopy (SEM) equipped with energy dispersive spectroscopy (EDS), X‐ray diffraction (XRD) pattern, X‐ray photoelectron spectroscopy (XPS), micro Raman spectroscopy and contact angle measurements were used to both characterize the physical and chemical copper films properties and understand the influence of bath temperature on the wettability of copper surface. In our studies, we have found that the gained copper mass significantly increased at 55 °C. The crystalline nature of the coated copper was confirmed by XRD. The presence of Cu₂O and CuO was observed by XPS and micro Raman techniques, which confirms the oxidization of the coated copper surface. Also these characterization techniques have shown the big influence of bath temperature on the morphology, grain size, chemical composition and the film thickness of the coated copper. The wettability was highly influenced by increasing CuO on the coated copper, which is increased by the bath temperature. The contact angle measurements have demonstrated the influence of C―O, O―C?O and CuO components of the surface on the wettability of the samples. Copyright © 2016 John Wiley & Sons, Ltd.     

Sputter‐deposited Ni/Ti double‐bilayer thin film and the effect of intermetallics during annealing

In the present study, a double bilayer of a Ni/Ti thin film was investigated. A nanoscale NiTi thin film is deposited in a Ni–Ti–Ni–Ti manner to form a double‐bilayer structure on a Si(100) substrate. Ni and Ti depositions were carried out by using d.c. and r.f. power, respectively, in a magnetron sputtering chamber. Four types of bilayers are formed by varying the deposition time of each layer (i.e. 15, 20, 25, and 30 min). The as‐deposited amorphous thin films were annealed at 300, 400, 500, and 600 °C for 1 h to achieve the diffusion in between the layers. Microstructures were analyzed using field‐emission scanning electron microscope and high‐resolution transmission electron microscope. It was found that, with the increase in annealing temperature from 300 to 600 °C, the diffusion at the interface and atomic migration on the surface increase. Cross‐sectional micrographs exhibited the interdiffusion between the two‐layer constituents, especially at higher temperatures, which resulted in diffusion patches along the interface. Phase analyses, performed by grazing incidence X‐ray diffraction, showed the formation of intermetallic compounds with some silicide phases that enhance the mechanical properties. Nanoindentation and atomic force microscopy were carried out to know the mechanical properties and surface profiles of the films. The surface finish is better at higher annealing temperatures. It was found that for annealing temperatures varying from 300 to 600 °C, the increase in annealing temperature resulted in a gradual increase in atomic‐cluster coarsening with improved adatom mobility. Copyright © 2016 John Wiley & Sons, Ltd.     

Electrically conductive acrylonitrile–butadiene rubber elastomers prepared by dopamine‐induced surface functionalization and metallization

A novel method for the preparation of electrical conductive surface silvered acrylonitrile–butadiene rubber (NBR) was developed. Dopamine was spontaneously oxide polymerized and deposited onto the surface of NBR. Electroless plating of silver was carried out on the poly(dopamine) (PDA)‐functionalized NBR surface. The composition of the NBR surface was studied by X‐ray photoelectron spectroscopy (XPS). XPS results showed that PDA was successfully deposited onto the NBR surface. The morphology of the NBR surface was observed by scanning electron microscopy (SEM). The SEM images showed that PDA had formed a distinctive layer ready for electroless deposition of silver. The catechol/quinone groups on the PDA molecular structure can be used as binding sites for silver ions. The silvered NBR showed high surface conductivity of 1.4 Ω. Copyright © 2011 John Wiley & Sons, Ltd.     

Photocatalytic Activity for Water Decomposition to Hydrogen over Nitrogen‐doped TiO2 Nanoparticle

Nitrogen-doped TiO2 nanoparticle photocatalysts were obtained by an annealing method with gaseous ammonia and nitrogen. The influence of dopant N on the crystal structure was characterized by XRD, XPS, BET, TEM and UV-Vis spectra. The results of XRD indicate that, the crystal phase transforms from anatase to rutile structure gradually with increase of annealing temperature from 300 to 700 ℃. XPS studies indicate that the nitrogen atom enters the TiO2 lattice and occupies the position of oxygen atom. Agglomeration of particles is found in TEM images after annealing. BET results show that the specific surface areas of N-doped samples from 44.61 to 38.27 m2/g are smaller than that of Degussa TiO2. UV-Vis spectra indicate that the absorption threshold shifts gradually with increase of annealing temperature, which shows absorption in the visible region. The influence of annealing condition on the photocatalytic property has been researched over water decomposition to hydrogen, indicating that nitrogen raises the photocatalytic activity for hydrogen evolution, and the modified TiO2 annealed for 2 h at 400 ℃ under gas of NH3/N2 (V/V＝1/2) mixture shows better efficiency of hydrogen evolution. Furthermore, the N-doped TiO2 nanoparticle catalysts have obvious visible light activity, evidenced by hydrogen evolution under visible light (λ＞400 nm) irradiation. However, the catalytic activity under visible light irradiation is absent for Degussa as reference and the N-doped TiO2 annealed at 700 ℃.     

Surface cavities produced by high‐dose nitrogen ion implantation into silicon

Nitrogen ion implantation (24 keV, 4.6 × 10¹⁷ cm^?2) into (100) a p‐type silicon wafer material and a subsequent electron beam annealing at 1100 °C for 15 s under high vacuum conditions leads to the formation of an uneven surface in the implanted region caused by nitrogen bubbles beneath the surface. Annealing at 1200 °C for 300 s results in surface cavities with a mean diameter of 350 nm and a surface coverage of 3–4% and an average depth of ～60 nm. Nuclear reaction analysis reveals that the nitrogen concentration in the as‐implanted state exceeds 57 at%, the value of stoichiometric Si₃N₄. Annealing at 1100 °C for 15 s slightly reduces the nitrogen peak concentration, whereas annealing at 1200 °C for 300 s induces a significant alteration to the shape of the nitrogen depth profile coupled with the lowering of the concentration close to the stoichiometry of Si₃N₄. The results present a new method of producing sub‐micrometre cavities embedded in a thin silicon nitride film on wafer silicon which may lead to novel micro‐electronic and biotechnology applications. Copyright © 2007 John Wiley & Sons, Ltd.     

Electrical,structural and morphological characteristics of rapidly annealed Ni/Pd Schottky rectifiers on n‐type GaN

Schottky rectifiers are fabricated on n‐type GaN using Ni/Pd metallization scheme and its characteristics have been investigated by current‐voltage (I‐V), Capacitance‐Voltage (C‐V), X‐Ray Diffraction (XRD) and SIMS measurements as a function of annealing temperature. The calculated Schottky barrier height of the as‐deposited contact was found to be 0.60 eV (I‐V), 0.71 eV (C‐V) with an ideality factor of 1.44. However, the barrier height slightly increases after annealing at 300, 400 and 500 °C. On the basis of the experimental results, a high‐quality Schottky contact with barrier height and ideality factor of 0.81 eV (I‐V), 0.88 eV (C‐V) and 1.13 respectively, can be obtained after annealing at 600 °C for 1 min in a nitrogen atmosphere. Further, after annealing at 700 °C, it is found that the barrier height slightly decreased to 0.74 eV (I‐V) and 0.85 eV (C‐V). From the above observations, one can note that Ni/Pd Schottky contact exhibits excellent electrical properties after a rapid thermal annealing at 600 °C. According to the SIMS and XRD analysis, the formation of gallide phases at the Ni/Pd/n‐GaN interface could be the reason of the barrier height increase at elevated annealing temperatures. The Atomic Force Microscopy (AFM) results show that the overall surface morphology of Ni/Pd Schottky contacts on n‐GaN is fairly smooth. The above observations reveal that Ni/Pd Schottky metallization scheme was a good choice for the fabrication of high‐temperature and high‐power device applications. Copyright © 2010 John Wiley & Sons, Ltd.     

The effect of annealing temperatures on surface properties,hydroxyapatite growth and cell behaviors of TiO2 nanotubes

Well‐ordered TiO₂ nanotubes were prepared by the electrochemical anodization of titanium in an ethylene glycol electrolyte containing 1 wt% NH₄F and 10 wt% H₂O at 20 V for 20 min, followed by annealing. The surface morphology and crystal structure of the samples were examined as a function of the annealing temperature by field emission scanning electron microscopy (FE‐SEM) and X‐ray diffraction (XRD), respectively. Crystallization of the nanotubes to the anatase phase occurred at 450 °C, while rutile formation was observed at 600 °C. Disintegration of the nanotubes was observed at 600 °C and the structure vanished completely at 750 °C. Electrochemical corrosion studies showed that the annealed nanotubes exhibited higher corrosion resistance than the as‐formed nanotubes. The growth of hydroxyapatite on the different TiO₂ nanotubes was also investigated by soaking them in simulated body fluid (SBF). The results indicated that the tubes annealed to a mixture of anatase and rutile was clearly more efficient than that in their amorphous or plain anatase state. The in vitro cell response in terms of cell morphology and proliferation was evaluated using osteoblast cells. The highest cell activity was observed on the TiO₂ nanotubes annealed at 600 °C. Copyright © 2010 John Wiley & Sons, Ltd.     

Surface properties of polymers treated with F2 laser

Selected polymers (polyethylene‐PE, polypropylene‐PP, polytetrafluoroethylene‐PTFE, polystyrene‐PS and polyethylenterephthalate‐PET) were irradiated with the linearly polarized light of a pulsed 157 nm F₂ laser. The irradiation results in degradation of polymers and ablation of polymer surfaces. Contact angle, measured by goniometry, was studied as a function of the number of laser pulses. The volume of the ablated polymer layer was determined by gravimetry. Changes in surface morphology and roughness were observed using atomic force microscopy. Surface chemistry of the samples was investigated by electrokinetic analysis and by XPS. While PET and PE exhibit small ablation, the ablation of PS and PTFE is more significant, and the most pronounced ablation is observed on PP. Contact angle of all polymers, with the only exception of PP, is a decreasing function of the number of laser pulses up to 2000 pulses. Laser irradiation leads to a refinement of the polymer surface morphology and a decrease of their surface roughness. Electrokinetic analysis and PS show changes in the surface chemistry of polymers after the laser treatment. Copyright © 2011 John Wiley & Sons, Ltd.     

Stabilization of Silver Nanoparticles by Polyelectrolytes and Poly(ethylene glycol)

Silver nanoparticles of 23 nm size were formed by chemical reduction of silver nitrate in excess of aqueous sodium borohydride. To examine the aggregation behavior in NaCl solutions, they were coated with poly(diallyldimethylammonium chloride), poly(allylamine hydrochloride) and poly(ethylene glycol) by layer‐by‐layer assembly. Silver nanoparticles coated with PDADMAC of both high and low molecular weight revealed the lowest stability independent of salt concentration. Silver nanoparticles coated with PAH and PEG are stable in 0.1 or 0.01 M NaCl, whereas addition of 0.5 M NaCl destroys the colloidal solution. The destruction of silver agglomerates and the increase of monodispersity in the case of PEG coated silver nanoparticles were observed after heating at 90 °C. In contrast, uncoated silver nanoparticles readily agglomerate and precipitate even after heating at 65 °C.

     

Structural and optical properties of thin silver films deposited on Si(111)

Silver films in the thickness range 3–12 nm were deposited on very clean Si(111) substrates at ambient temperature. The annealing up to temperatures of 650?°C was then studied using LEED/Auger, SEM and X-ray diffraction as well as resistivity and ellipsometry measurements. The films crack during annealing and silver islands are formed on the silicon surface. The coagulation results in a steep drop of the ellipsometric parameters Δ and Ψ in the temperature range 150–300?°C which can be attributed to the generation of surface plasmons and Mie plasmon polaritons, respectively.     

Multitechnique characterization of thin films of immiscible polymer systems: PS–b‐PMMA diblock copolymers and PS–PMMA symmetric blends

Immiscible polymer systems are known to form various kinds of phase‐separated structures capable of producing self‐assembled patterns at the surface. In this study, different surface characterization methods were utilized to study the surface morphology and composition produced after annealing thin polymer films. Two different SIMS techniques—static time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) and dynamic nano‐SIMS—were used, complemented by x‐ray photoelectron spectrometry (XPS) and atomic force microscopy (AFM). Thin films (spin‐coated onto silicon wafers) of polystyrene (PS)–poly(methyl methacrylate) (PMMA) symmetric blends and diblock copolymers of similar molecular weight were investigated. Surface enrichment by PS was found on all as‐cast samples. The samples were annealed at 160 °C for different time periods, after which the blend and the copolymer films exhibited opposite behaviour as seen by ToF‐SIMS and XPS. The annealed blend surface presented an increase in the PMMA concentration whereas that of copolymers showed a decrease in PMMA concentration compared with the as‐cast sample. For blends, the nano‐SIMS as well as AFM images revealed the formation of phase‐separated domains at the surface. The composition information obtained from ToF‐SIMS and XPS, as well as the surface mapping by nano‐SIMS and AFM, allowed us to conclude that PS formed phase separated droplet‐like domains on a thin PMMA matrix on annealing. The three‐dimensional nano‐SIMS images showed that the PS droplets were supported inside a rim of PMMA and that these droplets continued from the surface like columnar rods into the film until the substrate interface. In the case of annealed copolymer samples, the AFM images revealed topographical features resembling droplet‐like domains on the surface but there was no phase difference between the domains and the matrix. In the case of copolymers, owing to the covalent bonding between the blocks, complete phase separation was not possible. The three‐dimensional nano‐SIMS images showed domain structures in the form of striations inside the film, which were not continuous until the substrate interface. Information from the different techniques was required to gain an accurate view of the surface composition and topographical changes that have occurred under the annealing conditions. Copyright © 2005 John Wiley & Sons, Ltd.     

Comparing Ullmann Coupling on Noble Metal Surfaces: On‐Surface Polymerization of 1,3,6,8‐Tetrabromopyrene on Cu(111) and Au(111)

The on‐surface polymerization of 1,3,6,8‐tetrabromopyrene (Br₄Py) on Cu(111) and Au(111) surfaces under ultrahigh vacuum conditions was investigated by a combination of scanning tunneling microscopy (STM), X‐ray photoelectron spectroscopy (XPS) and density functional theory (DFT) calculations. Deposition of Br₄Py on Cu(111) held at 300 K resulted in a spontaneous debromination reaction, generating the formation of a branched coordination polymer network stabilized by C?Cu?C bonds. After annealing at 473 K, the C?Cu?C bonds were converted to covalent C?C bonds, leading to the formation of a covalently linked molecular network of short oligomers. In contrast, highly ordered self‐assembled two‐dimensional (2D) patterns stabilized by both Br?Br halogen and Br?H hydrogen bonds were observed upon deposition of Br₄Py on Au(111) held at 300 K. Subsequent annealing of the sample at 473 K led to a dissociation of the C?Br bonds and the formation of disordered metal‐coordinated molecular networks. Further annealing at 573 K resulted in the formation of covalently linked disordered networks. Importantly, we found that the chosen substrate not only plays an important role as catalyst for the Ullmann reaction, but also influences the formation of different types of intermolecular bonds and thus, determines the final polymer network morphology. DFT calculations further support our experimental findings obtained by STM and XPS and add complementary information on the reaction pathway of Br₄Py on the different substrates.     

Identifying Multinuclear Organometallic Intermediates in On‐Surface [2+2] Cycloaddition Reactions

We investigate the on‐surface [2+2] cycloaddition reaction of 2,3,6,7,10,11‐hexabromotriphenylene (HBTP) on Ag(111), Cu(111), Au(111), and Cu‐dosed Au(111) surfaces using STM and DFT simulation focusing on the organometallic intermediates. The fully debrominated HBTP molecules form an organo‐silver framework on Ag(111) and an organo‐copper framework on Cu(111), both incorporating multinuclear metal adatom clusters. The organo‐silver framework is converted into porous covalent networks via [2+2] cycloaddition above 240 °C. In contrast, the organo‐copper framework is very stable and does not undergo [2+2] cycloaddition even at 300 °C. On Au(111), no organo‐gold intermediate of [2+2] cycloaddition is observed. After loading Cu onto Au(111), the partially debrominated HBTP molecules bind to Cu adatom dimers to form multinuclear organo‐copper complexes at 100 °C which undergo [2+2] cycloaddition at 140 °C. This study shows that the choice of surface can direct the reaction pathway.     

Synthesis of well‐defined polymer brushes on the surface of zinc antimonate nanoparticles through surface‐initiated atom transfer radical polymerization

Zinc antimonate nanoparticles consisting of antimony and zinc oxide were surface modified in a methanol solvent medium using triethoxysilane‐based atom transfer radical polymerization (ATRP) initiating group (i.e.,) 6‐(2‐bromo‐2‐methyl) propionyloxy hexyl triethoxysilane. Successful grafting of ATRP initiator on the surface of nanoparticles was confirmed by thermogravimetric analysis that shows a significant weight loss at around 250–410 °C. Grafting of ATRP initiator onto the surface was further corroborated using Fourier transform Infrared spectroscopy (FT‐IR) and X‐ray photoelectron spectroscopy (XPS). The surface‐initiated ATRP of methyl methacrylate (MMA) mediated by a copper complex was carried out with the initiator‐fixed zinc antimonate nanoparticles in the presence of a sacrificial (free) initiator. The polymerization was preceded in a living manner in all examined cases; producing nanoparticles coated with well defined poly(methyl methacrylate) (PMMA) brushes with molecular weight in the range of 35–48K. Furthermore, PMMA‐grafted zinc antimonate nanoparticles were characterized using Thermogravimetric analysis (TGA) that exhibit significant weight loss in the temperature range of 300–410 °C confirming the formation of polymer brushes on the surface with the graft density as high as 0.26–0.27 chains/nm². The improvement in the dispersibility of PMMA‐grafted zinc antimonate nanoparticles was verified using ultraviolet‐visible spectroscopy and transmission electron microscopy. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2010     

Influence of pyrolysis temperature on the properties of sol–gel derived zinc oxide films

The influence of pyrolysis temperature on the properties of sol–gel derived zinc oxide films has been investigated. As-deposited films were pyrolyzed at 300 °C for 30 min and at 500 °C for 10 min. Final annealing was done at 600 °C for 30 min in air. The as-grown films deposited on soda-lime-silica glass substrates were highly c-axis oriented. Distinct grain structure was present in the film pyrolyzed at 500 °C, while the surface of the film pyrolyzed at 300 °C was smooth and no observed texture. The surface of ZnO pyrolyzed at 300 °C was covered with needle-like grain growth. With increasing pyrolysis temperature at 500 °C, a three-dimensional island formation was appeared.     

Influence of thermal annealing on the microstructure,hardness and corrosion behavior of TiAlSiCuN nanocomposite films

Nanocomposite TiAlSiCuN films were deposited on high speed steels by filtered magnetic arc ion plating. Detailed properties of the films annealed at various temperatures are studied. After thermal annealing at different temperatures ranging from 400 to 800 °C, changes in the film micro‐structure, chemical and phase composition, surface morphology, hardness and polarization curve properties were systematically characterized by X‐ray diffraction, X‐ray photoelectron spectroscopy, scanning electron microscopy, nano‐indenter and electrochemical workstation, respectively. It was found that the TiAlSiCuN films could be fully oxidized at 800 °C, Al and Ti atoms all diffused outwards and formed dense protective Al₂O₃ and TiO₂ layer. Simultaneously, the TiAlN phase gradually disappeared. The films annealed at 400 °C obtained the highest hardness because of the certain grain growth and little generated oxides. Besides, the certain formation of dense protective Al₂O₃ layer made the TiAlSiCuN film annealed at 600 °C present the least corrosion current density and the corrosion voltage. Copyright © 2016 John Wiley & Sons, Ltd.