Structural,compositional and hardness properties of hydrogenated amorphous carbon nitride thin films synthesized by dense plasma focus device

The hydrogenated amorphous carbon nitride (a‐CN_x:H) thin films were synthesized on the SS‐304 substrates using a dense plasma focus device. The a‐CN_x:H thin films were synthesized using CH₄/N₂ admixture gas and 20 focus deposition shots on substrates placed at different distances from the anode top. X‐ray photoelectron spectroscopy and Raman analysis confirmed different C–N bonding in the a‐CN_x:H thin films. A decrease in the N/C ratio as well as the sp³/sp² ratio with an increase in the substrate distance has been observed. The higher amount of C–N formation for the film synthesized at 10 cm is observed which decreases with increasing distance. The X‐ray photoelectron spectroscopy and Raman analysis affirmed the C ≡ N presence in all the thin films synthesized at different distances. The morphology of the synthesized a‐CN_x:H thin films showed nanoparticles and nanoparticle clusters formation at the surface. The hardness results showed comparatively lower hardness of the a‐CN_x:H thin films due to the presence of C ≡ N. The C–N formation with lower amount of C ≡ N and a higher N/C ratio as well as a higher sp³/sp² ratio for the films synthesized at 10 cm show reasonably higher hardness. Copyright © 2016 John Wiley & Sons, Ltd.     

Structure evolution of hydrogenated carbon films from amorphous carbon to fullerene‐like nanostructure

A–C:H (hydrogenated amorphous carbon) films were deposited by pulsed direct‐current (d.c.) plasma enhanced chemical vapor deposition on silicon substrates. This study investigated the structural and mechanical evolution of the as‐deposited films with fullerene‐like nanostructure. The results showed that pulsed d.c. negative bias (?500 ~ ?1000 V) signally influenced the growth rate, hardness, surface roughness, sp³ content, and friction behavior of the films. As the pulsed d.c. negative bias voltage increased, the sp³ content, surface roughness, hydrogen content and the friction coefficient of the films decreased; however, the growth rate and the hardness increased. The films deposited at ?1000 V with fullerene‐like microstructure display a nanohardness of about 19.7 GPa and the smallest friction coefficient (~0.06). The evolution on mechanical and structural properties of the films are explained by the a–C:H growth mechanism based on the interaction on plasma‐surface interface and the subsurface reactions in the film. Copyright © 2014 John Wiley & Sons, Ltd.     

Oxydifluoromethylation of Alkenes by Photoredox Catalysis: Simple Synthesis of CF2H‐Containing Alcohols

We have developed a novel and simple protocol for the direct incorporation of a difluoromethyl (CF₂H) group into alkenes by visible‐light‐driven photoredox catalysis. The use of fac‐[Ir(ppy)₃] (ppy=2‐pyridylphenyl) photocatalyst and shelf‐stable Hu's reagent, N‐tosyl‐S‐difluoromethyl‐S‐phenylsulfoximine, as a CF₂H source is the key to success. The well‐designed photoredox system achieves synthesis of not only β‐CF₂H‐substituted alcohols but also ethers and an ester from alkenes through solvolytic processes. The present method allows a single‐step and regioselective formation of C(sp³)–CF₂H and C(sp³)?O bonds from C=C moiety in alkenes, such as hydroxydifluoromethylation, regardless of terminal or internal alkenes. Moreover, this methodology tolerates a variety of functional groups.     

A Key Intermediate in Copper‐Mediated Arene Trifluoromethylation, [nBu4N][Cu(Ar)(CF3)3]: Synthesis,Characterization, and C(sp2)−CF3 Reductive Elimination

The synthesis, characterization, and C(sp²)?CF₃ reductive elimination of stable aryl[tris(trifluoromethyl)]cuprate(III) complexes [nBu₄N][Cu(Ar)(CF₃)₃] are described. Mechanistic investigations, including kinetic studies, studies of the effect of temperature, solvent, and the para substituent of the aryl group, as well as DFT calculations, suggest that the C(sp²)?CF₃ reductive elimination proceeds through a concerted carbon–carbon bond‐forming pathway.     

Benzylic C(sp3)H Perfluoroalkylation of Six‐Membered Heteroaromatic Compounds

Successful benzylic C(sp³)? H trifluoromethylation, pentafluoroethylation, and heptafluoropropylation of six‐membered heteroaromatic compounds were achieved as the first examples of a practical benzylic C(sp³)? H perfluoroalkylation. In these reactions, BF₂C_nF_2n+1 (n=1–3) functioned as both a Lewis acid to activate the benzylic position and a C_nF_2n+1 (n=1–3) source. The perfluoroalkylation proceeded at both terminal and internal positions of the alkyl chains. Perfluoroalkylated products were obtained in moderate to excellent yields, even on gram scale, and in a sequential procedure without isolation of the intermediates. By using this method, trifluoromethylation of a bioactive compound, as well as introduction of a CF₃ group into a bioactive molecular skeleton, proceeded regioselectively.     

Bioactivity and mechanical properties of nickel‐incorporated hydrogenated carbon nanocomposite thin films

In this paper, the influence of nickel incorporation on the mechanical properties and the in vitro bioactivity of hydrogenated carbon thin films were investigated in detail. Amorphous hydrogenated carbon (a‐C:H) and nickel‐incorporated hydrogenated carbon (Ni/a‐C:H) thin films were deposited onto the Si substrates by using reactive biased target ion beam deposition technique. The films' chemical composition, surface roughness, microstructure and mechanical properties were investigated by using XPS, AFM, TEM, nanoindentation and nanoscratch test, respectively. XPS results have shown that the film surface is mainly composed of nickel, nickel oxide and nickel hydroxide, whereas at the core is nickel carbide (Ni₃C) only. The presence of Ni₃C has increased the sp² carbon content and as a result, the mechanical hardness of the film was decreased. However, Ni/a‐C:H films shows very low friction coefficient with higher scratch‐resistance behavior than that of pure a‐C:H film. In addition, in vitro bioactivity study has confirmed that it is possible to grow dense bone‐like apatite layer on Ni/a‐C:H films. Thus, the results have indicated the suitability of the films for bone‐related implant coating applications. Copyright © 2011 John Wiley & Sons, Ltd.     

Non‐hydrogenated amorphous germanium carbide with adjustable microstructure and properties: a potential anti‐reflection and protective coating for infrared windows

Amorphous non‐hydrogenated germanium carbide (a‐Ge_1?xC_x) films have been deposited using magnetron co‐sputtering technique by varying the sputtering power of germanium target (P_Ge). The effects of P_Ge on composition and structure of the a‐Ge_1?xC_x films have been analyzed. The FTIR spectrum shows that the C–Ge bonds were formed in the a‐Ge_1?xC_x films according to the absorption peak at ~610 cm^?1. The Raman results indicate that the amorphous films also contain both Ge and C clusters. The XPS results reveal that the carbon concentration decreased as P_Ge increased from 40 to 160 W. The fraction of sp³ C–C bonds remains almost constant when increasing P_Ge from 40 to 160 W. The sp² C–C content of a‐Ge_1?xC_x film decreases gradually to 35.9% with P_Ge up to 160 W. Nevertheless, sp³ C–Ge sites rose with increasing P_Ge. Furthermore, the hardness and the refractive index gradually increased with increasing P_Ge. The excellent optical transmission of annealed a‐Ge_1–xC_x double‐layer coating at 400 °C suggests that a‐Ge_1?xC_x films can be used as an effective anti‐reflection coating for the ZnS IR window in the wavelength region of 8–12 µm, and can endure higher temperature than hydrogenated amorphous germanium carbide do. Copyright © 2012 John Wiley & Sons, Ltd.     

Defluoroalkylation of sp3 C−F Bonds of Industrially Relevant Hydrofluoroolefins

A simple, one-pot procedure is reported for the selective defluoroalkylation of trifluoromethyl alkene derivatives with aldehydes and ketones. The reaction sequence allows construction of a new C−C bond in a highly selective manner from a single sp³ C−F bond of a CF₃ group in the presence of sp² C−F bonds. The scope incorporates industrially relevant fluorocarbons including HFO-1234yf and HFO-1234ze. No catalyst, additives or transition metals are required, rather the methodology relies on a recently developed boron reagent. Remarkably, the boron site of this reagent plays a dual role in the reaction sequence, being nucleophilic at boron in the C−F cleavage step (S_N2’) but electrophilic at boron en route to the carbon–carbon bond-forming step (S_E2’). The duplicitous behaviour is underpinned by a hydrogen atom migration from boron to the carbon atom of a carbene ligand.     

Effect of Power Density on the Electrochemical Properties of Undoped Amorphous Carbon (a‐C) Thin Films

Undoped a‐C thin films were deposited with varying power density from 10 to 25 W/cm² using unbalanced closed‐field magnetron sputtering (CFUBMS). The effect of power density on the physical and electrochemical properties was investigated by experimental characterization methods and atomistic simulations. XPS indicated that the films were composed mostly of sp²‐bonded carbon (55–58 at.%) with a small amount of oxygen (8–9 at.%) in the surface region. The films appeared completely amorphous in XRD. The I_D/I_G ratio obtained by Raman spectroscopy indicated an increase from 1.76 to 2.34 with power density. The experimental and simulated data suggested a possible ordering and/or clustering of the sp² phase with power density as the cause of the improved electrical properties of the a‐C films. The electrochemical properties of a‐C were between those of glassy carbon and tetrahedral amorphous carbon with potential windows ranging from 2.77 to 2.93 V and double‐layer capacitance values around 0.90 μF cm^?2. Electron transfer for Ru(NH₃)₆^3+/2+ and FcMeOH^+1/0 was reversible whereas that for IrCl₆^2?/3? was quasi‐reversible. Peak potential separation of dopamine and oxidation potential of ascorbic acid decreased with power density, correlating with the structural and electrical changes of the films. The a‐C thin films deposited by CFUBMS are inherently conductive and their physical properties can be adjusted by varying the deposition parameters to a wide range of electrochemical applications.     

Atmospheric pressure chemical vapour deposition of fluorine‐doped tin(IV) oxide from fluoroalkyltin precursors

Perfluoroalkytin compounds R_(4−n)Sn(R_f)_n (R = Me, Et, Bu, R_f = C₄F₉, n = 1; R = Bu, R_f = C₄F₉, n = 2, 3; R = Bu, R_f = C₆F₁₃, n = 1) have been synthesized, characterized by ¹H, ¹³C, ¹⁹F and ¹¹⁹Sn NMR, and evaluated as precursors for the atmospheric pressure chemical vapour deposition of fluorine‐doped SnO₂ thin films. All precursors were sufficiently volatile in the range 84–136 °C and glass substrate temperatures of ca 550 °C to yield high‐quality films with ca 0.79–2.02% fluorine incorporation, save for Bu₃SnC₆F₁₃, which incorporated <0.05% fluorine. Films were characterized by X‐ray diffraction, scanning electron microscopy, thickness, haze, emissivity, and sheet resistance. The fastest growth rates and highest quality films were obtained from Et₃SnC₄F₉. An electron diffraction study of Me₃SnC₄F₉ revealed four conformations, of which only the two of lowest abundance showed close F Sn contacts that could plausibly be associated with halogen transfer to tin, and in each case it was fluorine attached to either the γ‐ or δ‐carbon atoms of the R_f chain. Copyright © 2005 John Wiley & Sons, Ltd.     

S‐((Phenylsulfonyl)difluoromethyl)thiophenium Salts: Carbon‐Selective Electrophilic Difluoromethylation of β‐Ketoesters, β‐Diketones,and Dicyanoalkylidenes

S‐((Phenylsulfonyl)difluoromethyl)thiophenium salts were designed and prepared by a triflic acid catalyzed intramolecular cyclization of ortho‐ethynyl aryldifluoromethyl sulfanes. The thiophenium salts were found to be efficient as electrophilic difluoromehtylating reagents for introduction of a CF₂H group to sp³‐hybridized carbon nucleophiles such as of β‐ketoesters and dicyanoalkylidenes. The (phenylsulfonyl)difluoromethyl group can be readily transformed into CF₂H under mild reaction conditions. Enantioselective electrophilic difluoromethylation was also achieved in the presence of bis(cinchona) alkaloids.     

The tribological performance of fullerene‐like hydrogenated carbon films under ionic liquid lubrication

Fullerene‐like hydrogenated carbon films were deposited on Si substrate by plasma‐enhanced chemical vapor deposition. The microstructures of films were characterized by high‐resolution transmission electron microscopy and Raman spectrum. The tribological performance of films was tested by reciprocating ball‐on‐disc tester under 1‐ethyl‐3‐methylimidazolium tetrafluoroborate ionic liquid. The surface morphology and chemical composition of wear tracks and wear rates were investigated by optical microscope, X‐ray photoelectron spectroscopy, and 3D surface profiler. The results indicated that the film with a typical fullerene‐like structure embedded into the amorphous sp² and sp³ carbon networks could be prepared successfully, and the film shows a higher hardness (26.7 GPa) and elastic recovery (89.9%) compared with the amorphous carbon film. Furthermore, the film shows a lower friction coefficient at low contact load and friction frequency, and excellent wear‐resistance performance at high load and frequency under ionic liquid lubrication. Meanwhile, the wear life of fullerene‐like hydrogenated carbon films could be improved significantly using ionic liquid as a lubrication material. Copyright © 2015 John Wiley & Sons, Ltd.     

Synthesis,Reactivity and Structural Properties of Trifluoromethylphosphoranides

Phosphoranides are interesting hypervalent species which serve as model compounds for intermediates or transition states in nucleophilic substitution reactions at trivalent phosphorus substrates. Herein, the syntheses and properties of stable trifluoromethylphosphoranide salts are reported. [K(18-crown-6)][P(CF₃)₄], [K(18-crown-6)][P(CF₃)₃F], and [NMe₄][P(CF₃)₂F₂] were obtained by treatment of trivalent precursors with sources of CF₃⁻ or F⁻ units. These [P(CF₃)_4-nF_n]⁻ (n=0–2) salts exhibit fluorinating (n=1–2) or trifluoromethylating (n=0) properties, which is disclosed by studying their reactivity towards selected electrophiles. The solid-state structures of [K(18-crown-6)][P(CF₃)₄] and [K(18-crown-6)][P(CF₃)₃F] are ascertained by single crystal X-ray crystallography. The dynamics of these compounds are investigated by variable temperature NMR spectroscopy.     

Theoretical evaluation of the nature and strength of the F������F intermolecular interactions present in fluorinated hydrocarbons

The nature, strength and directionality of C?CF···F interactions were theoretically evaluated on all symmetry unique dimers present in the CF₄, C₂F₄ and C₆F₆ crystals and on CF₄, CHF₃, CH₂F₂ and CH₃F model dimers placed in two different geometries. On each dimer, the interaction energy was computed at the MP2/aug-cc-pVDZ level, and also an Atoms in Molecule analysis of the dimer electron density was done to find all intermolecular bonds. The characterization was completed by computing the energy components of the dimer interaction energy, using the SAPT method. The results show that in most dimers found in the CF₄, C₂F₄ and C₆F₆ crystals, there are more than one C?CF···F intermolecular bond and sometimes even a C?CF···?? intermolecular bond. By selecting dimers presenting one C?CF···F bond, the following strength can be estimated for a single C?CF···F bond: ?0.21?kcal/mol in C(sp³) atoms, ?0.25?kcal/mol in C(non-aromatic sp²), ?0.41?kcal/mol in C(aromatic sp²). The interaction energy of the dimer grows almost linearly with the number of C?CF···F bonds present. The relative orientation of the C?CF···F bond affects the bond strength. The SAPT calculations indicate that in collinear dimers, C?CF···F interactions are strongly dominated by the dispersion energetic component, while when in non-collinear conformations the electrostatic component can be as important as the dispersion one.     

Direct Trifluoromethylthiolation and Perfluoroalkylthiolation of C(sp2)H Bonds with CF3SO2Na and RfSO2Na

A new method for CF₃SO₂Na‐based direct trifluoromethylthiolation of C(sp²)? H bonds has been developed. CF₃SSCF₃ is generated in situ from cheap and easy‐to‐handle CF₃SO₂Na, and in the presence of CuCl can be used for electrophilic trifluoromethylthiolation of indoles, pyrroles, and enamines. The method has been extended to perfluoroalkylthiolation reactions using R_fSO₂Na.     

The structure and tribological properties of aluminum/carbon nanocomposite thin films synthesized by reactive magnetron sputtering

Hydrogenated nanocomposite aluminum/carbon thin films (Al/a‐C:H) were fabricated on stainless steel and silicon wafer substrates via unbalanced reactive magnetron sputtering from an Al target in CH₄/Ar plasma. The composition and structure of Al/a‐C:H films were investigated by high‐resolution transmission electron microscope (HRTEM), XPS and micro‐Raman spectroscopy. Nanoindenter, interferometer and ball‐on‐disc tribometer were carried out to evaluate the hardness, internal stress and tribological properties of Al/a‐C:H films. HRTEM observations confirmed that the metallic Al nanocrystallites were uniformly dispersed in the amorphous carbon matrix. XPS and Raman analyses indicated that the sp² content increased with the increase of Al content in the films. Nanoindenter and interferometer tests exhibited that the uniform incorporation of Al nanocrystallites can diminish drastically the magnitude of internal stress with maintaining the higher hardness of as‐deposited films. Especially, the ball‐on‐disc tribometer measurements revealed that the nanocomposite film with 2.3 at.% Al content exhibited relatively better wear resistance and self‐lubrication performance with a friction coefficient of 0.06 and wear rate of 3.1 × 10^?16 m³/ N·m under ambient air, which can be attributed to the relatively higher hardness, the formation of continuous graphitized transfer film on counterface and the reduced reaction of oxygen with carbon. Copyright © 2010 John Wiley & Sons, Ltd.     

Reactive EC(p‐p)π‐systems 53 [1]: Reactivity studies on perfluoro‐2‐arsapropene: [2+2]‐cycloaddition reactions and quantum chemical calculations

The extremely labile perfluoro‐2‐arsapropene F₃CAsCF₂ ( 1 ) has been generated by an improved pyrolysis process of Me₃SnAs(CF₃)₂ and found to be stabilized by the presence of hexamethyldisiloxane and tert‐butylphosphaethyne, thus allowing (i) reactivity studies with alkyne derivatives like tBuCP, (iPr)₂NCP, MeCCN(iPr)₂, HCCOEt and (ii) a full NMR investigation of 1 (¹⁹F, ¹³C). Due to the instability of 1 and some of the products, the [2+2]‐cycloaddition reactions gave the expected arsaphospha‐ and arsa‐cyclobutene derivatives, respectively, in moderate to good yields, but in some cases contaminated with side and/or decomposition products. Unequivocal characterization of the novel compounds was accomplished by spectroscopic in‐ vestigations (¹H, ¹³C, ¹⁹F, ³¹P NMR, IR, MS) supported by comparison with the data of the more stable phosphorus analogues. An interesting isomerization was observed for the 2‐dialkylamino‐4,4‐difluoro‐ 1‐trifluoromethyl‐1‐arsa‐3‐phospha‐2‐cyclobutenes yielding the more stable 3‐dialkylamino‐2,4‐difluoro‐ 1‐trifluoromethyl‐1‐arsa‐2‐phospha‐3‐cyclobutenes. Quantum chemical calculations [B3LYP/6‐311+ G(d,p)] of HAsCH₂, F₃CAsCF₂, and F₃CPCF₂ were carried out to compare the length of the AsC double bond with the literature data and to elucidate substituent effects on its electronic structure. © 2005 Wiley Periodicals, Inc. Heteroatom Chem 16:406–419, 2005; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/hc.20118     

Influence of deposition pressure on hydrogenated amorphous carbon films prepared by d.c.‐pulse plasma chemical vapor deposition

Hydrogenated amorphous carbon films (a‐C : H) were prepared by d.c.‐pulse plasma chemical vapor deposition using CH₄ and H₂ gases. The microstructure and hardness of the resulting films were investigated at different deposition pressures (6, 8, 11, 15, and 20 Pa). The growth rate increased sharply from 3.2 to 10.3 nm/min with increasing the pressure from 6 to 20 Pa. According to Raman spectra, XPS, and Fourier transform infrared analysis, the films deposited at the pressure of 6 and 8 Pa have high sp³ content and show typical diamond‐like character. However, the microstructures and bond configuration of the films deposited at 11, 15, and 20 Pa have high sp² content and favored fullerene‐like nanostructure. The hardness and sp² content were shown to reach their minimum values simultaneously at a deposition pressure of 8 Pa and then increased continuously. The film with fullerene‐like nanostructure obtained at 20 Pa displays a high Raman I_D/I_G ratio (~1.6), and low XPS C 1s binding energy (284.4 eV). The microstructural analysis indicates that the films are composed of a hard and locally dense fullerene‐like network, i.e. a predominantly sp²‐bonded material. The rigidity of the films is basically provided by a matrix of dispersed cross‐linked sp² sites. Copyright © 2012 John Wiley & Sons, Ltd.     

Kinetics and mechanism of the thermal gas‐phase oxidation of perfluorobutene‐2 in presence of trifluoromethyl hypofluorite

The oxidation of perfluorobutene‐2 (C₄F₈) initiated by trifluoromethyl hypofluorite (CF₃OF) in presence of O₂ has been studied at 323.1, 332.6, 342.5, and 352.0 K, using a conventional static system. The initial pressure of CF₃OF was varied between 4.8 and 23.6 Torr, that of C₄F₈ between 48.7 and 302.4 Torr, and that of O₂ between 51.5 and 270.4 Torr. Several runs were made in presence of 325.5–451.2 Torr of N₂. The main products were COF₂, CF₃C(O)F, and CF₃OC(O)F. Small amounts of compound containing ? CF(CF₃)? O? C(O)CF₃ group were also formed, as detected by ¹³C NMR spectroscopy. The oxidation is a homogeneous short‐chain reaction, attaining, at the pressure of O₂ used, the pseudo‐zero‐order condition with respect to O₂ as reactant. The reaction is independent of the total pressure. Its basic steps are as follows: the thermal generation of CF₃O^? radicals by the abstraction of fluorine atom of CF₃OF by C₄F₈, the addition of CF₃O^? to the alkene, the formation of perfluoroalkoxy radicals RO^? in presence of O₂, and the decomposition of these radicals via the C? C bond scission, giving products containing ? C(O)F end group and reforming RO^? and CF₃O^? radicals. The mechanism consistent with experimental results is postulated. © 2003 Wiley Periodicals, Inc. Int J Chem Kinet 35: 532–541, 2003     

Electrophilic Iron Catalyst Paired with a Lithium Cation Enables Selective Functionalization of Non‐Activated Aliphatic C−H Bonds via Metallocarbene Intermediates

Combining an electrophilic iron complex [Fe(^Fpda)(THF)]₂ ( 3 ) [^Fpda=N,N′‐bis(pentafluorophenyl)‐o‐phenylenediamide] with the pre‐activation of α‐alkyl‐substituted α‐diazoesters reagents by LiAl(OR^F)₄ [OR^F=(OC(CF₃)₃] provides unprecedented access to selective iron‐catalyzed intramolecular functionalization of strong alkyl C(sp³)?H bonds. Reactions occur at 25 °C via α‐alkyl‐metallocarbene intermediates, and with activity/selectivity levels similar to those of rhodium carboxylate catalysts. Mechanistic investigations reveal a crucial role of the lithium cation in the rate‐determining formation of the electrophilic iron‐carbene intermediate, which then proceeds by concerted insertion into the C?H bond.