石墨烯纳米带量子点中的量子混沌现象

在20 mK的极低温下测量了石墨烯纳米带量子点的电子输运性质,观测到清晰的库仑阻塞菱形块和对应量子点激发态的电导峰.对库仑阻塞近邻电导峰间距和峰值进行了统计分析,发现其统计分布分别满足无规矩阵理论描述的Wigner-Dyson分布和Porter-Thomas分布,说明石墨烯纳米带量子点在低温下出现了量子混沌现象.还讨论了这种长方形量子点中量子混沌的可能成因. 关键词： 石墨烯纳米带 量子点 库仑阻塞 量子混沌     

Numerical study of localization length in disordered graphene nanoribbons

In this work, we study quantum transport properties of a defective graphene nanoribbon (DGNR) attached to two semi-infinite metallic armchair graphene nanoribbon (AGNR) leads. A line of defects is considered in the GNR device with different configurations, which affects on the energy spectrum of the system. The calculations are based on the tight-binding model and Green’s function method, in which localization length of the system is investigated, numerically. By controlling disorder concentration, the extended states can be separated from the localized states in the system. Our results may have important applications for building blocks in the nano-electronic devices based on GNRs.     

Persistent currents in a graphene ring with armchair edges

A graphene nanoribbon with armchair edges is known to have no edge state. However, if the nanoribbon is in the quantum spin Hall state, then there must be helical edge states. By folding a graphene ribbon into a ring and threading it by a magnetic flux, we study the persistent charge and spin currents in the tight-binding limit. It is found that, for a broad ribbon, the edge spin current approaches a finite value independent of the radius of the ring. For a narrow ribbon, inter-edge coupling between the edge states could open the Dirac gap and reduce the overall persistent currents. Furthermore, by enhancing the Rashba coupling, we find that the persistent spin current gradually reduces to zero at a critical value beyond which the graphene is no longer a quantum spin Hall insulator.     

Contact conductance between graphene and quantum wires

The contact conductance between graphene and two quantum wires which serve as the leads to connect graphene and electron reservoirs is theoretically studied. Our investigation indicates that the contact conductance depends sensitively on the graphene-lead coupling configuration. When each quantum wire couples solely to one carbon atom, the contact conductance vanishes at the Dirac point if the two carbon atoms coupling to the two leads belong to the same sublattice of graphene. We find that such a feature arises from the chirality of the Dirac electron in graphene. Such a chirality associated with conductance zero disappears when a quantum wire couples to multiple carbon atoms. The general result irrelevant to the coupling configuration is that the contact conductance decays rapidly with the increase of the distance between the two leads. In addition, in the weak graphene-lead coupling limit, when the distance between the two leads is much larger than the size of the graphene-lead contact areas and the incident electron energy is close to the Dirac point, the contact conductance is proportional to the square of the product of the two graphene-lead contact areas, and inversely proportional to the square of the distance between the two leads.     

Transport properties in a line defect superlattice of graphene

It was recently reported that a kind of graphene line defect can be fabricated in a controllable experimental way. In the present work we theoretically investigate the band structure and the electronic transport properties of a graphene superlattice formed by embedding periodically line defects in the graphene lattice. Based on the calculated results, we suggest that such a superlattice can be used as a quantum wire array which can carry much larger current than a single graphene nanoribbon. A remarkable advantage of this superlattice over other quantum wires is that the electronic transport in it is insensitive to scattering effects except that the scattering potential range is smaller than the graphene lattice constant. Moreover, we find that the anisotropy of the Dirac cone presented in this superlattice has a nontrivial influence on the universal minimal conductivity and the sub-Poissonian shot noise of graphene.     

Cavity‐Photon‐Induced High‐Order Transitions between Ground States of Quantum Dots

It is shown that quantum electromagnetic transitions to high orders are essential to describe the time‐dependent path of a nanoscale electron system in a Coulomb blockade regime when coupled to external leads and placed in a 3D rectangular photon cavity. The electronic system consists of two quantum dots embedded asymmetrically in a short quantum wire. The two lowest in energy spin degenerate electron states are mostly localized in each dot with only a tiny probability in the other dot. In the presence of the leads, a slow high‐order transition between the ground states of the two quantum dots is identified. The Fourier power spectrum for photon–photon correlations in the steady state shows a Fano type of resonance for the frequency of the slow transition. Full account is taken of the geometry of the multilevel electronic system, and the electron–electron Coulomb interactions together with the para‐ and diamagnetic electron–photon interactions are treated with step‐wise exact numerical diagonalization and truncation of appropriate many‐body Fock spaces. The matrix elements for all interactions are computed analytically or numerically exactly.     

非对称量子点中电子的激发能量和跃迁谱线频率

研究了非对称量子点中与声子强耦合的电子的性质.采用线性组合算符和幺正变换方法研究非对称量子点中与声子强耦合的电子的第一内部激发态能量、激发能量和第一内部激发态到基态的跃迁谱线频率随量子点的横向和纵向有效受限长度,电子-声子耦合强度的变化关系。数值计算结果表明：非对称量子点中与声子强耦合的电子的第一内部激发态能量、激发能量和第一内部激发态到基态的跃迁谱线频率随量子点的横向和纵向有效受限长度的减小而迅速增大,表现出奇特的量子尺寸效应。非对称量子点中与声子强耦合的电子的第一内部激发态能量随电子-声子耦合强度的增加而减小。非对称量子点中与声子强耦合的电子的激发能量和第一内部激发态到基态的跃迁谱线频率随电子-声子耦合强度的增加而增大。     

含Stone-Wales缺陷zigzag型石墨烯纳米带的电学和光学性能研究

本文采用基于密度泛函理论的第一性原理对zigzag型石墨烯纳米带中含有不同Stone-Wales缺陷的电子结构特性和光学性能进行研究. 考虑了两种模型:不计电子自旋和考虑电子自旋的情况.研究发现:不计电子自旋情况下,含对称Stone-Wales缺陷的石墨烯纳米带在缺陷区域出现了凹凸不平的折皱构型,两种不同的Stone-Wales缺陷都引起了电荷的重新分布.考虑电子自旋时,Stone-Wales缺陷的引入对石墨烯纳米带自旋密度有显著影响,也引起了不同自旋的电子态密度的变化.进一步研究了纳米带的光学性能,发现 关键词： 石墨烯纳米带 Stone-Wales缺陷 电子结构 光学性能     

Quantum Transition of Two-Level System in a Parabolic Quantum Dot

The time evolution of the quantum mechanical state of an electron is calculated by using variational method of Pekar type on the condition of electric-LO phonon strong coupling in a parabolic quantum dot. We obtained the eigen energies of the ground state and the first-excited state, the eigen functions of the ground state and the first-excited state this system in a quantum dot may be employed as a two-level quantum system-qubit. The supposition electron is in system’s ground state in the initial time, the electron transit from the ground state to the excited state in presence of an electric field F along the x axis. The results indicate that the electron transition probability and the oscillation period increase with decreasing the electron-LO-phonon coupling constant, increasing the electric field and the confinement length.     

声子和温度对球型量子点中极化子性质的影响

采用求解能量本征方程、幺正变换及变分相结合的方法,研究声子和温度对球型量子点中极化子性质的影响。数值计算表明,声子效应导致极化子的基态能量低于电子能量,且极化子基态能量随电子—声子耦合强度的增大而降低。数值计算还表明,温度较低时,声子不会被激发,极化子的基态能量不随温度而变;温度较高时,声子会被激发,导致极化子能量随温度升高而增大。     

声子和温度对球型量子点中极化子性质的影响

采用求解能量本征方程、幺正变换及变分相结合的方法,研究声子和温度对球型量子点中极化子性质的影响.数值计算表明,声子效应导致极化子的基态能量低于电子能量,且极化子基态能量随电子-声子耦合强度的增大而降低.数值计算还表明,当温度较低,使得电子热运动能量小于声子能量时,声子不会被激发,极化子的基态能量不随温度的变化而变化;在温度较高,使得电子热运动能量大于声子能量时,电子和晶格热运动加剧,更多的声子被激发.极化子的基态能量随温度的升高而增大.     

I–V characteristic of electronic transport through a quantum dot chain: The role of antiresonance

The I–V spectrum of electronic transport through a quantum dot chain is calculated by means of the nonequilibrium Green function technique. In such a system, two arbitrary quantum dots are connected with two electron reservoirs through leads. When the dot-lead coupling is very weak, a series of discrete resonant peaks in electron transmission function cause staircase-like I–V characteristic. On the contrary, in the relatively strong dot-lead coupling regime, stairs in the I–V spectrum due to resonance vanish. However, when there are some dangling quantum dots in the chain outside two leads, the antiresonance which corresponds to the zero points of electron transmission function brings about novel staircase characteristic in the I–V spectrum. Moreover, two features in the I–V spectrum arising from the antiresonance are pointed out, which are significant for possible device applications. One is the multiple negative differential conductance regions, and another is regarding to create a highly spin-polarized current through the quantum dot chain by the interplay of the resonance and antiresonance. Finally, we focus on the role that the many-body effect plays on the antiresonance. Our result is that the antiresonance remains when the electron interaction is considered to the second order approximation.     

High thermoelectric performance of one graphene nanoribbon with line defects

We investigate the quantum transport through zigzag graphene nanoribbons with embedded “5-7-5”-edge line defects, by means of the non-equilibrium Green's function technique. It is found that when two semi-infinite line defects exist in the nanoribbon, notable Fano antiresonance takes place in the quantum transport process, which enables to drive the apparent thermoelectric effect. We propose this structure to be a promising candidate for improving the thermoelectric efficiency based on graphene nanoribbons.     

The influence of electric field on a parabolic quantum dot qubit

This paper calculates the time evolution of the quantum mechanical state of an electron by using variational method of Pekar type on the condition of electric--LO-phonon strong coupling in a parabolic quantum dot. It obtains the eigenenergies of the ground state and the first-excited state, the eigenfunctions of the ground state and the first-excited state This system in a quantum dot may be employed as a two-level quantum system qubit. The superposition state electron density oscillates in the quantum dot with a period when the electron is in the superposition state of the ground and the first-excited state. It studies the influence of the electric field on the eigenenergies of the ground state, the first-excited state and the period of oscillation at the different electron--LO-phonon coupling constant and the different confinement length.     

抛物线性限制势量子点量子比特及其光学声子效应

在抛物量子点中电子与体纵光学声子强耦合的条件下,应用Peaker变分方法得出了电子的基态和第一激发态的本征能量及基态和第一激发态本征波函数.量子点中这样的二能级体系可作为一个量子比特.当电子处于基态和第一激发态的叠加态时,计算出电子在空间的概率分布作周期性振荡.并且得出了振荡周期随受限长度及耦合强度的变化关系. 关键词： 量子点 量子信息 量子比特     

Antiresonance of electron tunneling through a quantum dot array

Electronic transport through a one-dimensional quantum dot array is theoretically studied. In such a system both electron reservoirs of continuum states couple with the individual component quantum dots of the array arbitrarily. When there are some dangling quantum dots in the array outside the dot(s) contacting the leads, the electron tunneling through the quantum dot array is wholly forbidden if the electron energy is just equal to the molecular energy levels of the dangling quantum dots, which is called as antiresonance of electron tunneling. Accordingly, when the chemical potential of the reservoir electrons is aligned with the electron levels of all quantum dots, the linear conductance at zero temperature vanishes if there are odd number dangling quantum dots; Otherwise, it is equal to 2e²/h due to resonant tunneling if the total number of quantum dots in the array is odd. This odd–even parity is independent of the interdot and the lead–dot coupling strength.     

量子点中强耦合极化子的性质

采用Pekar类型的变分方法研究了抛物量子点中强耦合极化子的基态和激发态的性质。计算了基态和激发态极化子的结合能、光学声子平均数和极化子的共振频率。讨论了这些量对有效限制强度和电子 体纵光学声子耦合强度的依赖关系。结果表明:抛物量子点中极化子的共振频率、基态和激发态极化子的结合能以及光学声子平均数都随量子点的有效束缚强度的增大而减小。光学声子平均数随电子 体纵光学声子耦合强度的增加而增大。     

抛物线性限制势二能级系统量子点量子比特的温度效应

应用Pekar变分方法,在抛物量子点中电子与体纵光学声子强耦合条件下,得出了电子的基态和第一激发态的本征能量及基态和第一激发态的本征波函数.以量子点中这样的二能级体系作为一个量子比特.当电子处于基态和第一激发态的叠加态时,计算出电子在时空中作周期性振荡的概率分布.并且得出了概率分布随温度及耦合强度的变化关系. 关键词： 量子点 量子比特 温度效应     

The energy levels of a two-electron two-dimensional parabolic quantum dot

This paper studies the two-electron total energy and the energy of the electron--electron interaction by using a variational method of Pekar type on the condition of electric--LO-phonon strong coupling in a parabolic quantum dot. It considers the following three cases: 1) two electrons are in the ground state; 2) one electron is in the ground state, the other is in the first-excited state; 3) two electrons are in the first-excited state. The relations of the two-electron total energy and the energy of the electron--electron interaction on the Coulomb binding parameter, the electron-LO-phonon coupling constant and the confinement length of the quantum dot are derived in the three cases.     

Ultrafast carrier dynamics of resonantly excited InAs/GaAs self-assembled quantum dots

We study theoretically the time development of electronic relaxation in quantum dots. We consider the process of relaxation of the state with an electron prepared at the beginning of relaxation in the electronic ground state. We obtain a fast (in picoseconds) increase of electronic population in the excited state. Also, we consider the process of relaxation of an electron from an excited state in the dot. Here we obtain an incomplete depopulation of the electron from the excited state. We compare these results to experiments in which a fast decrease of luminescence is reported during the first period of relaxation after resonant excitation of the ground state. We estimate numerically the role of electron–LO–phonon (Fröhlich's coupling) mechanism in these processes. We show that this effect may be attributed to the influence of multiple scattering of quantum dot electrons on LO phonons. A single-electron two-energy-level quantum dot model is used to demonstrate this effect in an isolated semiconductor quantum dot.