Luminescence of Ni doped CaF2

Luminescence measurements of CaF₂ : Ni are reported. Before X-irradiation an emission band at 680 nm is observed with the corresponding excitation band at 255 nm. After RT X-irradiation the emission spectrum consists of three peaks at 290, 375 and 680 nm, all of them with an excitation band at 255 nm. The same emission spectrum together with the electron-hole recombination band is obtained by X-ray excitation.A comparison with previous EPR and optical absorption measurements indicates that the emission bands are due to different kinds of Ni²⁺ centers. The emission processes are similar to those found in CaF₂ : Co and CaF₂ : Mn.     

Ni2+ emission in SrF2

Luminescence measurements of X-irradiated SrF₂:Ni are reported. After X-irradiation two emission bands have been found. One of them peaked at 293 nm and has an excitation band at 267 nm. The other one at about 770 nm, which is much weaker, has an excitation band at 274 nm. Both emission bands are also observed under X-ray excitation. A comparison with some previous studies of the absorption and thermoluminescence properties of X-irradiated SrF₂:Ni indicates that the emission bands are due to two different kinds of Ni²⁺ centers. The proposed emission mechanisms are similar to those found in CaF₂:Ni.     

Absorption,excitation and fluorescence spectra of thallium activated cesium bromide

Absorption, excitation and fluorescence spectra of T1⁺ doped cesium bromide have been investigated at various thallium concentrations. At very low thallium concentration two absorption bands are obtained at 225 nm and 264 nm. With rise of thallium concentration additional absorption bands are obtained at 230, 244, 258, 270 and 285 nm. A single bell-shaped fluorescence band at 357 nm in the ultraviolet region is obtained at low thallium concentration. Two additional visible fluorescence bands appear at 440 and 540 nm with rise in thallium content. The excitation spectra for ultraviolet emission band and visible emission bands are found to be different. Accordingly the ultraviolet emission band is attributed to the characteristic A emission in T1⁺ ion and the visible bands are attributed to dimer centers havingD _4h site symmetry.     

Emission color variation of M2SiO4:Eu (M=Ba, Sr, Ca) phosphors for light-emitting diode

The luminescent properties of alkaline earth orthosilicates M₂SiO₄ (M=Ba, Sr, Ca) doped with Eu²⁺ ions are investigated. Two emission bands are assigned to the f-d transitions of Eu²⁺ ions doped into two different cation sites in host lattices confirmed by electron paramagnetic resonance signal. Two emission bands show the different emission color variation with substituting M²⁺ cations with smaller cations. This behavior is discussed in terms of two competing factors of the crystal field strength and covalence. Also the decay times are in order of 600-1000 ns. These phosphors with maximum excitation of around 370 nm can be applied as a color-tunable phosphor for light-emitting diode based on ultraviolet chip/phosphor technology.     

KBaPO4∶Eu3+红色发光材料的光谱特性

采用高温固相法制备了KBaPO4:Eu3+红色发光材料,研究了Eu3+掺杂浓度、电荷补偿剂等对材料发光性质的影响,并利用X射线衍射及光谱等技术对材料的性能进行了表征.研究结果显示:在400 nm近紫外光激发下,材料呈多峰发射,分别由Eu3+的5D0→7FJ(J=0,1,2,3,4)能级跃迁产生,主峰位于621 nm|监测621 nm发射峰,所得激发光谱由O2-→Eu3+电荷迁移带(200~350 nm)和f-f高能级跃迁吸收带(350~450 nm)组成,主峰位于400 nm|改变Eu3+掺杂浓度,KBaPO4∶Eu3+材料的发射强度随之改变,Eu3+浓度为5 mol%时,强度最大|依据Dexter理论,得知引起浓度猝灭的原因为电偶极-电偶极相互作用|添加电荷补偿剂,可增强KBaPO4∶Eu3+材料的发射强度,其中以添加Li+,Cl-时,材料发射强度提高最明显.     

偏硅酸钙中Ce3+的发光性质

制备了Ce3+激活的CaSiO3磷光体。在77K和室温下研究讨论了它们的激发和发射光谱以及荧光寿命等光学性质,分析了结构和电荷补偿剂的影响。在UV或CR激发下,Ce3+发射较强的蓝紫光,峰值为396nm。室温下,Ce3+离子的荧光寿命大约为30ns。     

A new self-activated yellow-emitting phosphor Zn2V2O7 for white LED

A new self-activated yellow-emitting Zn₂V₂O₇ phosphor was synthesized by high temperature solid-state reaction. X-ray powder diffraction (XRD) analysis confirmed the sample with monoclinic formation of Zn₂V₂O₇. The excitation and emission spectra indicated the phosphor can be efficiently excited by near ultraviolet (NUV) light in 220–400 nm range and exhibit a bright broad yellow emission with the highest emission intensity at 531 nm. The broad emission band from 400 to 650 nm can be attributed to the charge transfer transition in the VO₄ tetrahedra, which suggests that the phosphor is a promising yellow phosphor applied for white light-emitting diodes (WLED).     

Determination of the excited state structure of 7-azaindole using a Franck-Condon analysis

The change in structure of 7-azaindole upon electronic excitation was determined by a Franck-Condon analysis of the intensities in the fluorescence emission spectra obtained via excitation of six different vibronic bands. A total of 107 emission band intensities were fit, together with the changes in the rotational constants of four 7-azaindole isotopomers. The geometry change of the ring framework upon electronic excitation from the electronic ground state to the ¹L_b state (ππ*) can be described by an overall expansion of the pyridine ring of 7-azaindole, with minor changes of the pyrrole ring. The resulting geometry changes are interpreted on the basis of ab initio calculations.     

Photon avalanche upconversion and pump power studies in LaF<Subscript>3</Subscript>:Er<Superscript>3+</Superscript>/Yb<Superscript>3+</Superscript> phosphor

Hexagonal LaF₃:Er³⁺/Yb³⁺ phosphor material has been synthesized by chemical precipitation method to obtain high near-infrared to green upconversion (UC) efficiency. Its thermal, structural and fluorescence properties have been studied. UC emission bands have been observed up to 315 nm in UV region. The effect of input pump power on the intensities of various emission bands has been studied in detail and photon avalanche UC mechanism has been identified. On increasing the excitation power, some bands have shown saturation in intensity. Also, at higher pump intensities two new UC bands were observed and their origin has been discussed. The phosphor has also been tested for possible UC-based fingerprint detection.     

Emission spectra of KBr:Sn2+

Crystals of KBr:Sn²⁺ irradiated in the A₁, A₂, B or D absorption bands exhibit strong emission in the region of 500 nm. The dependence of this emission on excitation wavelength in the A absorption band shows the 500 nm emission band to be a doublet. This doublet structure is due to electrostatic perturbation from a nearby cation vacancy. It is not possible from emission spectra alone to decide on the actual symmetry of the A_T1 and A_T2 centres responsible for the emission doublet but the various possibilities are discussed. Quenching experiments show that a small emission band at 700 nm is due to Sn²⁺ dimer centres. A series of weak emission bands on the high-energy side of the A_T band are ascribed to emission from the relaxed excited B and D states.     

白光LED用单基质荧光粉BaSrMg( PO4)2∶Eu2+的制备及发光性能研究

采用高温固相反应法在1 200℃下制备了 Eu2+激活的BaSrMg( PO4)2高亮度白光荧光粉,并对其晶体结构和发光性能进行了研究.荧光光谱研究表明该荧光粉的发射光谱由两个谱带组成,其中心分别位于424和585 nm处,归结为Eu2+分别占据了基质中Sr2+,Ba2+格位而导致的4f 65d1→4f7电子跃迁.两个...     

2-芳基苯并噻唑荧光性能的研究

本文合成了四种2-芳基苯并噻唑类化合物,研究了它们多品粉末的发光,对其发光机理进行了探讨,分析了取代基和共轭程度对激发光谱、发射光谱及Stokes位移的影响。     

A red oxide phosphor, Sr2ScAlO5:Eu2+ with perovskite-type structure, for white light-emitting diodes

Sr2ScAlO5:Eu2+,a red oxide phosphor with a perovskite-type structure,has been synthesized through a solid-state reaction and its luminescence properties have been investigated.An absorption band centering at 450 nm is observed from the diffuse reflection spectra and the excitation spectra,indicating that the phosphor can match perfectly with the blue light of InGaN light-emitting diodes.A broad red emission band at 620 nm is found from the emission spectra,originating from the 4f 6 5d-4f 7 transition of the Eu 2+ ions.The best doping content of Eu in this material is about 5%.Sr2ScAlO5:Eu2+is a highly promising red phosphor for use in white light-emitting diodes.     

白光LED用硅酸盐基质发光粉的制备及其封装特性

在还原气氛下采用高温固相法合成了Eu²⁺激活的硅酸盐基质白光LED用发光粉,运用扫描电子显微镜和荧光分光光度计分别对发光粉的形貌和激发、发射光谱进行了表征,并对其与YAG发光粉的封装特性进行了对比研究。结果表明,合成的硅酸盐基质白光LED用发光粉其激发光谱覆盖范围宽。采用不同波段的LED芯片进行封装时,和YAG发光粉相比,其色坐标、显色指数和流明效率波动不大,尤其是流明效率波动仅在8%左右,而且其老化性能也和YAG发光粉差别不大。对其和YAG LED的相对发射光谱研究表明,硅酸盐更适合暖白光LED的封装,硅酸盐发光粉粒径与封装流明效率规律变化的研究结果表明,较大粒径的硅酸盐发光粉有可能在大功率LED上有潜在的应用前景。     

Synthesis and photoluminescence properties of NaPbB5O9:Dy phosphor materials for white light applications

Given the recent increased interest in phosphor materials and their applications, we analyzed a new NaPbB₅O₉:Dy³⁺ phosphor material with different concentrations of Dy³⁺. In particular, we investigated the crystal structure, morphology, and luminescence properties of these materials. X-ray diffraction analyses confirmed the formation of NaPbB₅O₉:Dy³⁺ phosphor powder. The functional groups present in the phosphor materials were examined by Fourier transform infrared spectroscopy. Scanning electron microscope images showed that the size of the grains was in the micrometer range. Photoluminescence spectra were recorded at different excitation wavelengths for the phosphor materials and we analyzed the variation in the intensity of the emission bands with different concentrations of Dy³⁺ ions. The color co-ordinates were calculated and used to characterize the color of the phosphor. We found that the emission colors of the Dy³⁺-doped NaPbB₅O₉ powders depended on the Dy³⁺ ion doping concentration and the excitation wavelength.     

Luminescence and energy transfer of white-light emitting CaAl2SiO6:Ce3+, Tb3+ phosphors

A novel white-light emitting CaAl₂SiO₆: Ce³⁺, Tb³⁺ phosphor has been prepared by a sol–gel method. X-ray diffractometry and spectrofluorometry were used to characterize structural and optical properties of the samples. The results indicate that the crystal structure of the phosphor is a single phase of CaAl₂SiO₆. The excitation band of the phosphor covers a wide region from 240 nm to 380 nm. CaAl₂SiO₆: Ce³⁺, Tb³⁺ phosphors show four emission bands: one at 400 nm for Ce³⁺ and three at 487 nm, 543 nm and 585 nm for Tb³⁺. With appropriate tuning of Tb³⁺ content, white light with different hues can be achieved under UV radiation. The energy transfer mechanism from Ce³⁺ to Tb³⁺ in CaAl₂SiO₆ host was demonstrated to be dipole–dipole interaction.     

Ca2SiO4:Dy3+材料的制备及其发光特性

采用高温固相法制备了Ca₂SiO₄:Dy³⁺发光材料.在365nm紫外光激发下,测得Ca₂SiO₄:Dy³⁺材料的发射光谱为一多峰宽谱,主峰分别位于486nm,575nm和665nm处;监测575nm发射峰,测得材料的激发光谱为一多峰宽谱,主峰分别位于331nm,361nm,371nm,397nm,435nm,461nm和478nm处.研究了Dy³⁺掺杂浓度对Ca₂SiO₄:Dy³⁺材料发射光谱及发光强度的影响,结果显示,随Dy³⁺浓度的增大,黄、蓝发射峰强度比(Y/B)逐渐增大,利用Judd-Ofelt理论解释了其原因;随Dy³⁺浓度的增大,Ca₂SiO₄:Dy³⁺材料发光强度先增大,在Dy³⁺浓度为4 mol%时到达峰值,而后减小,根据Dexter理论其浓度猝灭机理为电偶极-电偶极相互作用.研究了电荷补偿剂Li⁺,Na⁺和K⁺对Ca₂SiO₄:Dy³⁺材料发射光谱的影响,结果显示,不同电荷补偿剂下,随电荷补偿剂掺杂浓度的增大,Ca₂SiO₄:Dy³⁺材料发射光谱强度的演化趋势相同,即Ca₂SiO₄:Dy³⁺材料发射峰强度先增大后减小,但不同电荷补偿剂下,材料发射峰强度最大处对应的补偿剂浓度不同,对应Li⁺,Na⁺和K⁺时,浓度分别为4mol%,4mol%和3mol%. 关键词： 白光LED 2SiO₄:Dy³⁺')" href="#">Ca₂SiO₄:Dy³⁺ 发光特性 电荷补偿     

A new red-emitting phosphor of Eu3+-doped Sr2MgMoxW1−xO6 for solid state lighting

The white light-emitting diode has recently attracted great attention as a promising candidate for next generation lighting. The solid solution of Sr_1.80Eu_0.10Li_0.10MgMo_xW_1?xO₆ was synthesized via high-temperature solid-state reaction and this solid solution is treated as a promising red emitting phosphor for white light-emitting diodes. In our cases, the X-ray diffraction, excitation spectra, emission spectra and decay curves of these solid solutions were measured as a function of the Mo/W ratio to characterize the structural and luminescent properties. The excitation bands of the series of phosphors are consistent well with the region of near ultraviolet light, and the phosphors present better color purity than the commercial phosphor Y₂O₂S:Eu³⁺ in current use. Taking these properties into consideration, this kind of material may find a great potential application as a red phosphor for near-ultraviolet excited white light-emitting diodes.     

On the luminescence of TlCl+KCl phosphor

The measurements on the luminescence spectra of TlCl+KCl mixed phosphor under low energy cathode rays at 80° K have been presented here. The reflectance as well as excitation spectra of this mixed phosphors have also been studied. The X-ray diffraction studies of the samples along with the optical studies show that the mixed phosphor consists of two phases: (1) KCl:Tl (2) TlCl:K. It has been observed that the emission bands due to thallous chloride are gradually quenched with the increase in potassium chloride content of the phosphor; further, the emission bands supposed to be due to KCl:Tl phosphors gradually appear. Since some of the emission bands obtained with KCl:Tl phosphors at high thallium content are also present in the luminescence spectra of thallous chloride it is suggested that such bands should be attributed to undissociated thallous chloride present in KCl:Tl phosphor. The quenching of thallous chloride emission by the incorporation of potassium chloride in the system has been explained as being due to the absence of stoichiometric excess of thallium in such mixed system. The results also show that the absorption spectra of the mixed system is determined by the minor components KCl:Tl. This indicates that the absorption spectra of KCl:Tl phosphor should not be affected by the presence of undissociated thallous chloride.     

Eu-doped B2O3–ZnO–PbO glass phosphor powders with?spherical shape and fine size prepared by spray pyrolysis

Eu-doped B₂O₃–ZnO–PbO glass phosphor powders with spherical shape and fine size were directly prepared by spray pyrolysis. The glass phosphor powders prepared at a temperature of 1100°C had broad XRD peak at around 28°. One glass phosphor powder was formed from one droplet at the preparation temperature range from 900 to 1100°C. The mean size of the glass phosphor powders was 0.75 μm. The glass transition temperature (T _g ) of the glass phosphor powders prepared by spray pyrolysis was 378.5°C. The excitation spectrum of the glass phosphor powders prepared at the optimum preparation temperature of 1100°C had bands at 362, 381, 392, 463, 525, and 532 nm. The glass phosphor powders had emission spectra with bands at 579, 614, and 653 nm. The glass phosphor powders with doping concentration of Eu of 7 wt% had the maximum photoluminescence intensity. The glass phosphor layer formed from the glass phosphor powders had high transparencies above 90%.