超高次谐波的共振增强

本文计算了一维模型单电子分子离子在强激光作用下的高次谐波发射功率谱,光强从9.83×1013 W/cm2到1.1×1014 W/cm2.研究发现,在这个光强范围,谐波谱的超高次部分(相应的单光子能量大于Ip+3.2Up,Ip是原子电离势,Up是有质动力能)的发射功率出现了增强现象.研究认为,这是由高能电子布居几率的共振增强造成的.     

利用两色红外组合场驱动氦原子产生单个阿秒脉冲

利用数值求解原子在强激光场中的含时薛定谔方程,对一维氦原子处于两色红外组合场中产生的高次谐波进行了研究,研究发现,在组合场驱动下,谐波谱的截止位置可以拓展到Ip+5.7Up,从而得到脉宽较短的多个阿秒脉冲,通过改变两束激光的相位延迟,最终得到了33.8as的单个脉冲.进一步利用小波变换分析了阿秒脉冲的发射特征,发现单个阿秒脉冲实现是对电子长路径抑制的结果.     

联合双原子在组合脉冲辐照下的高次谐波发射

首先采用经典的“三步模型“理论,分析了一维普薛耳-特勒势(P-T势)模型原子在组合脉冲作用下的动力学行为,进而利用该组合脉冲辐照联合双原子模型,通过调节组合脉冲的场幅、相位以及设定原子的核间距,使原子有适当的电离和较大的复合效率,因而在截止位置远达Ip 8Up处获得了效率高达10-9的高次谐波发射.     

一维模型原子高次谐波发射效率影响因素的研究

本文通过分析影响原子高次谐波发射效率的几个基本元素,定量地得到了如下规律:(1)高次谐波发射效率与复合时刻电子在基态和连续态上的布居乘积成正比;(2)谐波发射效率随复合电子能量的增加而急剧下降.理论解释了上述规律产生的原因.     

一维模型原子在组合脉冲辐照下的高次谐波发射

本文采用SMT (simple man's theory) 仔细分析了一维普薛耳-特勒势(P-T势)模型原子在高、低频组合强激光脉冲辐照下电子的动力学行为.并且, 在此基础上,着力讨论了电离电子在激光脉冲策动下回核并与之复合从而发射高次谐波的平台结构.采用一种特殊设计的高、低频脉冲组合方案,使谐波发射效率较之于只用单一低频激光时的谐波发射效率提高两个数量级.     

一维模型原子在组合脉冲辐照下的高次谐波发射

本文采用SMT（sknple man’s theory）仔细分析了一维普薛耳-特勒势（P—T势）模型原子在高、低频组合强激光脉冲辐照下电子的动力学行为。并且，在此基础上，着力讨论了电离电子在激光脉冲策动下回核并与之复合从而发射高次谐波的平台结构，采用一种特殊设计的高、低频脉冲组合方案。使谐波发射效率较之于只用单一低频激光时的谐波发射效率提高两个数量级。     

相对论质量修正效应对超高次谐波的影响

通过分别求解含时狄拉克方程和含时薛定谔方程, 研究了一维模型原子在相对论超强激光脉冲作用下的超高次谐波发射过程. 研究结果表明: 在弱场强条件下, 相对论的模拟结果可以退化到非相对论的结果; 随着场强的增强, 可以逐渐观察到明显的相对论质量修正效应. 此外, 根据发展的相对论的"三步"模型并结合小波时频分析方法, 分析了谐波平台的截止位置和发射效率.     

H2+和HD+分子体系高次谐波发射效率的理论研究

本文通过求解一维含时薛定谔方程, 比较研究了H2+和HD+分子离子体系的高次谐波发射效率. 数值计算结果表明, 在相同激光条件下, 不对称分子体系能产生更高强度的谐波谱. 此外, 借助时频分布, 电离几率和电子-核波包密度概率分布图, 对计算结果做出了合理的解释.     

H_2~+和HD~+分子离子体系高次谐波发射效率的理论研究

本文通过求解一维含时薛定谔方程,比较研究了H2+和HD+分子离子体系的高次谐波发射效率.数值计算结果表明,在相同激光条件下,不对称分子体系能产生更高强度的谐波谱.此外,借助时频分布,电离几率和电子-核波包密度概率分布图,对计算结果做出了合理的解释.     

采用适宜靶原子提高高次谐波的转化效率

通过对影响谐波转化效率因素的分析,提出选择适宜的靶原子对象,即选择在高能区具有较强连续态-基态耦合强度的靶原子,可以优化高次谐波的发射条件.本文的数值实验结果表明,利用该方案,可以把平台区尾部谐波的转化效率提高两个数量级.     

特性异常的发光管的分析研究

介绍了二类不同结构的(表面和侧面发射型)红外发光二极管.研究和分析了它们在低频大电流脉冲注入下的Pp—Ip特性和直流注入下的光谱特性.结果表明:正常情况下,器件具有线性的Pp—Ip特性,直流注入下的发射光谱具有高斯分布形状,对于Burrus表面发射型器件,在0—3A的峰值脉冲电流注入下,部分器件具有的异常Pp—Ip特性:线性-亚线性-超线性区.在20—100mA的直流电流注入下,部分器件的发射光谱具有多峰状.     

入射光调制对Ce∶KNSBN晶体两波耦合的影响

研究了入射光调制条件下Ce∶KNSBN晶体两波耦合动态过程.结果表明,入射光调制抑制了光扇噪音对Ce∶KNSBN晶体两波耦合动态过程的影响,提高了透射信号光强度.同时研究了入射光光强比Ip/Is及入射光总光强Io对最佳调制频率及增益改善Gm/Gf的影响.结果显示,同一Io下,Ip/Is为100时,Gm/Gf到达峰值1.52,对应的最佳调制频率为150 Hz;同一Ip/Is下,Io为57 mW/cm2时,Gm/Gf最大为1.53,对应的最佳调制频率为175 Hz.     

Extension of high-order harmonic cutoff frequency by synthesizing the waveform of a laser field via the optimization of classical electron trajectory in the laser field

We theoretically investigate high-order harmonic generation by employing strong-field approximation （SFA） and present a new approach to the extension of the high-order harmonic cutoff frequency via an exploration of the dependence of high-order harmonic generation on the waveform of laser fields. The dependence is investigated via detailed analysis of the classical trajectories of the ionized electron moving in the continuum in the velocity-position plane. The classical trajectory consists of three sections （Acceleration Away, Deceleration Away, and Acceleration Back）, and their relationship with the electron recollision energy is investigated. The analysis of classical trajectories indicates that, besides the final （Acceleration Back） section, the electron recollision energy also relies on the previous two sections. We simultaneously optimize the waveform in all three sections to increase the electron recollision energy, and an extension of the cutoff frequency up to Ip ＋ 20.26Up is presented with a theoretically synthesized waveform of the laser field.     

Coadsorption of samarium with oxygen on the molybdenum (2 1 1) surface

Samarium atoms exist in two different electronic configurations, namely, divalent (Sm²⁺) and trivalent (Sm³⁺). Up to now, those two electronic configurations have been connected with the existence of Sm atoms in different valence states. Recent theoretical calculations performed by Yakovkin [9] show that both electronic configurations have similar LDOS around the Fermi level, and as a result, should give a similar photoelectron emission in the valence band region, which was identified earlier as the emission from the Sm²⁺ state. The Sm³⁺ signal in photoelectron emission could originate from contaminations of Sm by other elements, e.g. oxygen. To check the influence of O on the electronic structure of Sm, the XPS experiments of coadsorption of O and Sm have been performed.     

Quantum path control using attosecond pulse trains via UV-assisted resonance enhance ionization

We theoretically investigate the quantum path selection in an ultraviolet(UV)-assisted near-infrared field with an UV energy below the ionization threshold. By calculating the ionization probability with different assistant UV frequencies, we find that a resonance-enhanced ionization peak emerges in the region Euv < Ip, where Euv is the photon energy and Ip is the ionization energy. With an attosecond pulse train(APT) centered in the resonance region, we show that the short quantum path can be well selected in the continuum case. By performing the electron trajectory analysis, we have further explained the physical mechanism of the quantum path selection. Moreover, we also demonstrate that in the resonance region, the harmonic emission from the selected paths is more efficient than that with the APT energy above the ionization threshold.     

卤代烷第一电离能的变化规律研究

卤代烷ＲＸ的第一电离能Ｉｐ的变化规律可用如下方程表示：Ｉｐ（ｅＶ）＝３．３３８０＋０．７３４４Ｅｐ（Ｘ）＋２．７４２４「（１／αｘ）ｑｘ」－１．４０２ＰＥＩ其中,Ｅｐ（Ｘ）、αｘ分别为卤素原子最外层Ｐ电子的电离能和原子极化离,ｑｘ是卤代烷ＲＸ分子中卤原子Ｘ所带的部分电荷,ＰＥＩ是ＲＸ分子中烷基Ｒ的极化效应指数。华肜上式估算卤代烷的第一电离能与实验值符合的比较好。     

Tm~(3+)/Yb~(3+)共掺氟氧化物碲酸盐玻璃的上转换发光及光学温度传感

采用高温熔融淬火法成功的合成了Tm~(3+)/Yb~(3+)共掺杂的含有不同浓度Tm~(3+)的氟氧化物碲酸盐玻璃.测量了样品的吸收光谱,结果表明Yb~(3+)和Tm~(3+)成功掺入到玻璃基质中.在980nm激发下,样品在801nm(3H4→3H6)发射最强,在476nm(1G4→3H6)和651nm(1G4→3F4)发射较弱;分析了上转换发光强度与Tm~(3+)浓度依赖关系,确定了上转换发光的最佳掺杂浓度为0.1%Tm2O3;探讨Tm~(3+)的上转换发光机理和Tm~(3+)的浓度猝灭机理,结果表明在980nm激发下Tm~(3+)获得的能量主要来自于Yb~(3+)→Tm~(3+)的量传递,Tm~(3+)的浓度猝灭机理为Tm~(3+)-Tm~(3+)之间的交叉弛豫导致的无辐射能量传递,根据能量匹配的原则,给出可能的交叉弛豫通道.此外,在980nm激发以3F2,3和3H4作为热耦合能级研究分析了Tm~(3+)在氟氧化物碲酸盐玻璃中的温度传感性能,结果表明灵敏度随温度的升高而升高,说明Tm~(3+)掺杂的氟氧化物碲酸盐玻璃可以作为光纤传感材料,且在高温灵敏度更佳.     

Continuous-wave room-temperature operation of a 2.8 μm GaSb-based semiconductor disk laser

We demonstrate an optically pumped semiconductor disk laser based on the (AlGaIn)(AsSb) material system, which operates at an emission wavelength of 2.8 μm. Up to 120 mW of output power were obtained in cw operation and more than 500 mW in pulsed mode. The performance of the present laser is discussed in comparison to shorter-wavelength semiconductor disk lasers based on the same materials system.     

Double-clad Cr4+:YAG crystal fiber amplifier

A novel double-clad Cr4+:YAG crystal fiber is demonstrated by use of a codrawing laser-heated pedestal growth method. Up to 10 dB of gross gain at a wavelength of 1.52 microm is achieved at a pump power of 0.83 W, which, to our knowledge, is the first Cr4+-doped fiber amplifier in the optical fiber communication band.     

The concentration quenching and crystallographic sites of Eu²⁺ in Ca₂BO₃Cl

A yellow phosphor, Ca2BO3 Cl:Eu2+ , is prepared by the high-temperature solid-state method. Under the condition of excitation sources ranging from ultraviolet to visible light, efficient yellow emission can be observed. The emission spectrum shows an asymmetrical single intensive band centred at 573 nm, which corresponds to the 4f 6 5d 1 →4f 7 transition of Eu2+ . Eu2+ ions occupy two types of Ca2+ sites in the Ca2BO3 Cl lattice and form two corresponding emission centres, respectively, which lead to the asymmetrical emission of Eu2+ in Ca2 BO 3 Cl. The emission intensity of Eu2+ in Ca2BO3 Cl is influenced by the Eu2+ doping concentration. Concentration quenching is discovered, and its mechanism is verified to be a dipole–dipole interaction. The value of the critical transfer distance is calculated to be 2.166 nm, which is in good agreement with the 2.120 nm value derived from the experimental data.