Dielectric and impedance measurements on (1−x)Ba(Fe1/2Ta1/2)O3-xBa(Zn1/3Ta2/3)O3 ceramics

In this work, ((1−x)Ba(Fe_1/2Ta_1/2)O₃-xBa(Zn_1/3Ta_2/3)O₃), ((1−x)BFT-xBZT) ceramics with x = 0.00–0.12 were synthesized by the solid–state reaction method. X-ray diffraction data revealed that both the powders and ceramics were of a pure-phase cubic perovskite structure. All ceramics showed large dielectric constants. For the x = 0.12 sample, a very high dielectric constant (>20,600) was observed. A lowering in the dielectric loss compared to pure BFT ceramics was observed with the BZT addition. The impedance measurements indicated that BZT has a strong effect on the bulk grain and grain boundary resistance of BFT ceramics. These results are in agreement with the measured dielectric properties. Based on dielectric and impedance results, (1−x)BFT-xBZT ceramics could be of great interest for high performance dielectric materials applications due their giant dielectric constant behavior.     

Observation of giant dielectric constant in CdCu3Ti4O12 ceramics

Although CdCu₃Ti₄O₁₂ is isostructural to CaCu₃Ti₄O₁₂, the room temperature low-frequency dielectric constant of the former compound was reported to be ∼400, only 1/25 of that of the latter material [M.A. Subramanian, et al., J. Solid State Chem. 151 (2000) 323]. In this communication, we report that the dielectric constant of CdCu₃Ti₄O₁₂ can be remarkably increased by elevating the sintering temperature. The room temperature dielectric constant at 100 kHz achieves 9000, almost as much as that of CaCu₃Ti₄O₁₂, for the sample sintered at 1283 K. The appearance of giant dielectric constant in CdCu₃Ti₄O₁₂ is explained in terms of internal barrier layer capacitance (IBLC) effect with the subgrain boundary as the barrier. Our result supplies an approach in searching for new giant-dielectric-constant materials in the CaCu₃Ti₄O₁₂ family.     

Modeling and analysis of birefringence in magneto-optical thin film made by SiO2/ZrO2 doped with ferrite of cobalt

We report the device characteristics of the metal–dielectric high-reflectivity (HR) coated 1.55 μm laterally coupled distributed feedback (DFB) laser with metal surface gratings by using holographic lithography. The HR coating films are composed of Au/Ti/SiO₂. It provides a variety of advantages compared to the uncoated DFB laser on the same processed wafer while there is no degradation on current–voltage characteristics. For 3 μm wide and 300 μm long HR coated DFB laser, it exhibits a maximum output power of ∼17 mW and a threshold current of 14.2 mA at 20°C under continuous-wave mode. It is clear that the threshold current and slope efficiency are improved by 36% and 96%, respectively, due to the reduction of mirror loss. The metal–dielectric HR coating on one facet of DFB laser is found to have significantly increased characteristic temperature (i.e., T ₀∼88 K). Furthermore, the stable single-mode operation with an increased single-mode suppression ratio was achieved.     

Dielectric and phase transition of BaTi<Subscript>0.6</Subscript>Zr<Subscript>0.4</Subscript>O<Subscript>3</Subscript> ceramics prepared by a soft chemical route

BaTi_0.6Zr_0.4O₃ (BTZ) ceramic was synthesized by a soft chemical route. X-ray diffraction at room temperature shows that the sample has cubic perovskite structure with space group Pm-3m. Temperature dependent dielectric study of the sample has been investigated in the frequency range from 50 Hz to 1 MHz. The density of the sample was determined using Archimedes’ principle and found to be ∼ 97% of the X-ray density. The average grain size in the pallet was found to be ∼ 1 μm. The dielectric constant peaks at temperature T_m which is dependent on the frequency. The dielectric relaxation rate follows the Vogel–Fulcher relation with activation energy = 0.0185 eV, and freezing temperature = 186 K. All these measurements confirm that BTZ is a relaxor ferroelectric. PACS 77.22.Jp; 77.84.-s; 77.80.Bh; 77.22.Gm     

Impact of ethylene carbonate on electrical properties of PVA/(NH4)2SO4/H2SO4 proton-conductive membrane

A new proton-conductive membrane (PCM) based on poly (vinyl alcohol) and ammonium sulfate (NH₄)₂SO₄ complexed with sulfuric acid and plasticized with ethylene carbonate (EC) at different weight percent were prepared by casting technique. The structural properties of these electrolyte films were examined by XRD studies. The XRD patterns of all the prepared polymer electrolytes reveal the amorphous nature of the films. ac conductivity and dielectric spectra of the electrolyte were studied with changing EC content from weight 0.00 to 0.75 g. A maximum conductivity of 7.3 × 10⁻⁵ S cm⁻¹ has been achieved at ambient temperature for PCM containing 0.25 g of ethylene carbonate. The electrical conductivity σ, dielectric constant ε′ and dielectric loss ε″ of PCM in frequency range (100 Hz to 100 KHz), and temperature range (300–400 K) were carried out. Measurement of transference number was carried out to investigate the nature of charge transport in these polymer electrolyte films using Wagner’s polarization technique. Transport number data showed that the charge transport in these polymer electrolyte systems was predominantly due to ions. The electrolyte with the highest electrical conductivity was used in the fabrication of a solid-state electrochemical cell with the configuration (Mg/PCM/PbO₂). Various cell parameters ldensity, and current density were determined. The fabricated cells gave capacity of 650 μAh and have an internal resistance of 11.6 kΩ.     

Effect of Zn and Mg doping on structural,dielectric and magnetic properties of tetragonal CuFe2O4

The Cu_1?xA_xFe₂O₄ (A = Zn, Mg; x = 0.0, 0.5) ferrites were successfully synthesized by chemical co-precipitation method. X-ray diffraction and Raman spectroscopy reveals that all the ferrite samples are in single-phase with tetragonal structure for CFO and cubic spinel structure for CZFO and CMFO samples. SEM micrograph shows the variation of grain size with Zn and Mg doping in parent CFO sample. Frequency dependent dielectric response confirms the dielectric polarization and electrical conduction mechanism in the present series with a maximum value of dielectric constant and loss tangent for CZFO sample. The anomaly ～493 K in temperature dependent dielectric constant and dielectric loss is assigned to tetragonal to cubic phase transition in CFO sample. The magnetic measurement explored that the saturation value (M_s) is maximum for CZFO as compared to CFO and CMFO ferrites samples.     

Effect of Al2O3 on the electrical properties of ZnO-Pr6O11-based varistor ceramics

The effect of Al₂O₃ on the electrical properties of ZnO-Pr₆O₁₁-based ceramics is investigated in this work. The average grain size of ZnO increased as the Al₂O₃ content increased from 10.3 to 13.5 μm. It was found that a sample doped with Al₂O₃ of 0.005 mol% showed the highest nonlinear current-voltage characteristics with a nonlinear exponent of 43.8 and a leakage current of 0.66 μA. When the Al₂O₃ content was increased, the donor concentration was increased from 0.51×10¹⁸/cm³ to 1.59×10¹⁸/cm³, but the barrier height was decreased from 1.01 to 0.87 eV. The best electrical stability against aging stress was obtained by doping Al₂O₃ of 0.001 mol%.     

Temperature-dependent ac conductivity and dielectric response of vanadium doped CaCu3Ti4O12 ceramic

Successful incorporation of vanadium dopant within the giant dielectric material CaCu₃Ti₄O₁₂ (CCTO) through a  conventional solid-state sintering process is achieved and its influence on the dielectric as well as electrical properties as a function of temperature and frequency is reported here. Proper crystalline phase formation together with dopant induced lattice constant shrinkage was confirmed through X-ray diffraction. The temperature dependence of the dielectric constant at different constant frequencies was investigated. We infer that the correlated barrier hopping (CBH) model is dominant in the conduction mechanism of the ceramic as per the temperature-dependent ac conductivity measurements. The electronic parameters such as density of the states at the Fermi level, N(E _f) and hopping distance, R _ω of the ceramic were also calculated using this model.     

Enhanced dielectric and nonohmic properties of SrTiO3-modified CaCu3Ti4O12 ceramics

Dielectric and nonohmic properties of CaCu₃Ti₄O₁₂ (CCTO) ceramics can be modified by addition of SrTiO₃ (STO) in different molar proportions which were fabricated by a modified sol-gel method. XRD results indicated that all modified ceramics showed mixed phase consisting of both CCTO and STO. SEM images and grain size distribution probability also presented the change of microstructure with the addition of STO. The dielectric loss of the CCTO/0.4STO ceramics sintered at 1000 °C can be lower than 0.02 in a wide frequency (1 kHz–10 kHz), especially at 1 kHz, the dielectric loss of this sample is as low as 0.012. Furthermore, excellent nonlinear I–V electrical characteristic (high breakdown voltage to 54.15 kV/cm for CCTO/0.4STO sintered at 1000 °C) was observed as well. All the results indicated that the addition of STO does improve the dielectric properties and nonohmic characteristics of CCTO ceramics dramatically.     

AC conductivity and dielectric relaxation in Ba(Sm1/2Nb1/2)O3 ceramic

The complex perovskite oxide a barium samarium niobate (BSN) synthesized by solid-state reaction technique has single phase with cubic structure. The scanning electron micrograph of the sample shows the average grain size of BSN∼1.22 μm. The field dependence of dielectric response and loss tangent were measured in the temperature range from 323 to 463 K and in the frequency range from 50 Hz to 1 MHz. The complex plane impedance plots show the grain boundary contribution for higher value of dielectric constant in the low frequency region. An analysis of the dielectric constant (ε′) and loss tangent (tan δ) with frequency was performed assuming a distribution of relaxation times as confirmed by the scaling behaviour of electric modulus spectra. The low frequency dielectric dispersion corresponds to DC conductivity. The logarithmic angular frequency dependence of the loss peak is found to obey the Arrhenius law with an activation energy of 0.71 eV. The frequency dependence of electrical data is also analyzed in the framework of conductivity and electric modulus formalisms. Both these formalisms show qualitative similarities in relaxation times. The scaling behaviour of imaginary part of electric modulus M″ and dielectric loss spectra suggest that the relaxation describes the same mechanism at various temperatures in BSN. All the observations indicate the polydispersive relaxation in BSN.     

Synthesis and dielectric characteristics of La0.5Bi0.5MnO3 ceramics

La_0.5Bi_0.5MnO₃ ceramics with a single phase were prepared by a solid-state reaction method, and their dielectric properties were characterized. Two dielectric relaxations with a giant dielectric constant were identified in the temperature range from 125 to 350 K. The electron hopping between Mn³⁺ and Mn⁴⁺ was found to be the origin of the dielectric relaxation at low temperatures (125–200 K) with an activation energy of 0.18 eV. The high temperature (200–350 K) dielectric relaxation can be attributed to the conduction.     

Nonlinear electrical characteristics and dielectric properties of Ca,Ta-doped TiO<Subscript>2</Subscript> varistors

Ca,Ta-doped TiO₂ varistors with high nonlinear coefficients are obtained by a ceramic sintering. The nonlinear electrical and dielectric properties of the samples doped with 0.5mol% Ca and various concentrations of Ta (0.05∼2.0mol%) were investigated. The samples sintered at 1350 °C have nonlinear coefficients of α=5.1∼42.1 and high relative dielectric constants approach 10⁵. The effects of Ta-doping on the nonlinear and dielectric properties of the Ca,Ta-doped TiO₂ varistors are studied in greater detail. When the concentration of Ta is 0.5mol%, the sample possesses the highest nonlinear coefficient and a comparatively lower dielectric constant. The effects of Ta and the nonlinear electrical behavior of the TiO₂ system are explained by analogy to a grain-boundary atomic defect model. Received: 24 October 2001 / Accepted: 8 January 2002 / Published online: 3 May 2002 RID="*" ID="*"Corresponding author. Fax: +86-10/826-49531, E-mail: wangwanyan@yahoo.com.cn     

Investigation of final-stage sintering of various microsize structures prepared by micro powder injection molding

Micro powder injection molding (μPIM) has been developed as a potential technique for mass production of microcomponents in microsystems due to its shaping complexity at low cost, in which sintering is a crucial step to dictate the final properties of the microcomponents. In this paper, final-stage sintering behavior of 316L stainless steel microsize structures prepared by μPIM, φ100 μm and φ60 μm, respectively, was studied. The effect of size reduction in the regime of micrometers on the density of various microsize structures was investigated. Sintering kinetics of the microsize structures of φ100 μm and φ60 μm were studied based on particle level sintering models. It is found that the microsize structures of φ60 μm had higher density than the microsize structures of φ100 μm given the same sintering condition. The results indicate that size reduction in the regime of micrometers facilitated densification of microsize structures. The grain growth mechanism of microsize structures varied with size. Whereas the grain growth of the microsize structures of φ100 μm is governed by surface-diffusion-controlled pore drag, the grain growth of the microsize structures of φ60 μm is controlled by boundary diffusion. During densification, the microsize structures, φ100 μm and φ60 μm, are both controlled by lattice diffusion. The corresponding activation energies are reported in the paper.     

Effect of milling time on the properties of Pb(Mg1/3Nb2/3)O3 ceramics using the starting precursors PbO and MgNb2O6

Lead magnesium niobate, Pb(Mg_1/3Nb_2/3)O₃ (PMN) ceramics were prepared from the columbite method using calcined powders of various milling time (24–96 h). The effects on the grain size and dielectric properties of the ceramics were investigated. The results show that dielectric properties of ceramics are strongly influenced by the milling time of the starting precursors. Higher percentage of perovskite phase was found in the ceramics that was milled longer and thus the dielectric constant was found to increase when compared to the conventional 24 h milled results. Moreover, milling time also affected the particle size of the starting precursors and that of PMN powders. Therefore, milling time did not only affect the particle size of PMN powders but also the resultant grain size and the formation of perovskite phase, consequently affecting the dielectric constant of the ceramics.     

Effects of Sc2O3 on the microstructure and varistor properties of (Co, Nb)-doped SnO2

The effects of Sc₂O₃ on the properties of (Co, Nb)-doped SnO₂ varistors were investigated. It was found that by characterizing the samples, sintered at 1300 °C, the nonlinear coefficient presents a peak of =28.6 for a concentration of 0.05 mol% Sc₂O₃. The average grain size decreases from 2.9 m to 1.5 m, and the breakdown electrical field increases from 655 V/mm to 2197 V/mm. The relative electrical permittivity decreases from 7574 to 792 on increasing Sc₂O₃ from 0.05 mol% to 0.08 mol%. The increase of the breakdown electrical field with increasing Sc₂O₃ concentration is mainly attributed to the decrease of the grain size. The reason why the permittivity decreases with increasing Sc₂O₃ concentration originates from the ratio of the grain size to the barrier width. To illustrate the grain-boundary barrier formation of (Sc, Co, Nb) doped SnO₂ varistors, a modified defect barrier model was introduced, in which the negatively charged acceptors substituting for Sn ions should not be located at the grain interfaces, but at SnO₂ lattice sites of depletion layers instead. PACS 72.20.Ht; 81.20.Ev; 85.30.De; 85.30.Mn; 85.40.Ry     

Structural,magnetic and electrical study of nano-structured α-Fe1.4Ti0.6O3

Nano-structured α-Fe_1.4Ti_0.6O₃ has been synthesized using a simple technique of mechanical alloying. Doping of Ti atoms into α-Fe₂O₃ structure has been characterized by XRD, SEM-EDX, FTIR, VSM and impedance spectroscopy. Magnetic and electrical studies have revealed important changes at the interfaces of grains and grain boundaries, and at rhombohedral planes during formation of α-Fe_1.4Ti_0.6O₃ alloy. The alloy has shown the properties of ferromagnetic semiconductor with substantial increase of magnetic moment and electrical conductivity with the decrease of grain size. The 100 h milled sample has been air annealed to study the effects of thermal activated grain size, lattice structure, magnetism and electrical properties. This work has demonstrated some recent issues of the synthesis of ferromagnetic semiconductor, e.g., structural phase stability, grain size effects, magnetic ordering and electrical conductivity at different stages of the mechanical alloying and subsequent annealing at 700 °C.     

Intense formation of intermetallic phases during implantation of aluminum ions in titanium

The results from microstructure and phase composition investigations of titanium in different structural states (with average grain sizes of 0.3 μm, 1.5 μm, and 17 μm) are presented following Al ion implantation using the Mevva-V.RU source (irradiating dose, 10¹⁸ ion/cm²). The implanted multiphase layers are found to form on the base of α-Ti grains. The size, shape, and localization of the formed phases (TiO₂, Ti₂O, TiC, Ti₃Al, Al₃Ti) depend strongly on the grain size of titanium target. It is shown that the nanostructural particles of TiO₂ phase are located mainly on dislocations in the body of target grains. A Ti₂O surface layer is found to arise in titanium with a grain size of 17 μm. It is established that an ordered Ti₃Al phase is located at a depth of more than 200 nm in the implanted layer along the bounaries of the titanium grains.     

Magnetic and dielectric properties of Mn<Subscript>0.2</Subscript>Ni<Subscript>0.8</Subscript>Fe<Subscript>2</Subscript>O<Subscript>4</Subscript> nanoparticles synthesized by PEG-assisted hydrothermal method

We present a systematic investigation on the structural and magnetic properties of Mn_0.2Ni_0.8Fe₂O₄ nanoparticles synthesized by a polyethylene glycol (PEG)-assisted hydrothermal route. XRD, FT-IR, TEM and VSM were used for the structural, morphological, dielectric properties and magnetic investigation of the products, respectively. Average crystallite size of product was estimated using Line profile fitting as 6 ± 1 nm and particle size as 6.5 ± 1.0 nm from TEM micrographs. Magnetization measurements have shown that the particles have a blocking temperature of 134 K. Magnetization and the coercive field of the sample increase by decreasing the temperature. The conductivity measurements reveal the semiconducting behaviour for the sample. Temperature-dependent dielectric properties: dielectric permittivity (ε) and ac conductivity (σ_ac) for the sample were studied as a function of applied frequency in the range from 1 Hz to 3 MHz. These studies indicated that the dielectric dispersion curve for the sample showed usual dielectric dispersion which can be explained on the basis of Koop’s theory, which is based on the Maxwell–Wagner model for the interfacial polarization of homogeneous double structure.     

氧离子导体La1.9Y0.1Mo2O9细晶粒陶瓷的制备和电学性质研究

采用溶胶凝胶法合成的La_1.9Y_0.1Mo₂O₉纳米晶粉体, 结合微波烧结技术制备出不同晶粒度的La_1.9Y_0.1Mo₂O₉块体样品. 利用X射线衍射仪(XRD)、高分辨透射显微镜(HRTEM)、场扫描显微镜(SEM)对粉体及陶瓷块体的物相、 形貌进行了表征, 利用交流阻抗谱仪测试了样品不同温度下的电导率. 实验结果表明, 掺Y的La_1.9Y_0.1Mo₂O₉能将高温立方β 相稳定到室温; 块体样品致密均匀, 平均晶粒度范围在60 nm–4 μm之间; 致密度高的样品表现出高的电导率, 其中900 ℃烧结样品的电导率600 ℃时高达0.026 S/cm, 比固相反应法制备的La_1.9Y_0.1Mo₂O₉样品高出约1倍. 总结认为样品的致密性对电导率影响较大, 是通过影响晶界电导率来影响总电导率的, 样品的晶粒度(在60 nm–4 μm范围内)对电导率的影响还不能确定. 关键词： 氧离子导体 1.9Y_0.1Mo₂O₉')" href="#">La_1.9Y_0.1Mo₂O₉ 细晶粒陶瓷 微波烧结