连续波抽运气体波导产生太赫兹激光的理论研究

基于速率方程理论,建立了光抽运气体波导产生太赫兹(THz)激光的能量转化模型,理论分析并求解得到抽运光吸收系数、THz小信号增益系数以及THz输出功率表达式.计算结果表明,THz输出功率随工作物质气压的升高先增加后逐渐减少,随抽运功率的增加、输出镜反射率的减小而增加;最佳工作气压随抽运功率的增大而增大;激发态粒子数以及THz光子通量随波导截面径向逐渐减小,而THz小信号增益系数逐渐增加;抽运饱和、弱抽运吸收与激发态工作物质对THz激光的吸收是限制激光转化效率提高的根源;基于该模型的计算结果与相关文献中的实验数据符合较好.     

光纤参变放大器光纤长度的优化设计

随着高输出功率掺铒光纤放大器和高非线性光纤的出现和使用,光纤参变放大器(OPAs)中出现了越来越多的增益饱和现象,这是光放大器中应该尽量避免的。对此,提出了依据光纤参变放大器的光纤非线性系数、抽运光功率、信号输入功率等参量对光纤长度进行优化设计的解决思路。明确提出最佳光纤长度的概念,即在其他参量一定的情况下使信号增益或信号输出功率达到最大所需的最小光纤长度,而且最佳光纤长度有利于提高光纤参变放大的增益带宽和波长转换带宽。通过数值积分求解描述光纤参变放大过程的非线性耦合方程,并运用控制变量法深入研究了最佳光纤长度与光纤非线性系数、抽运光功率、信号输入功率的关系。最后用最小二乘法进行数据拟合确定系数,得到简洁、实用的最佳光纤长度解析表达式。与已有实验结果比较表明,该解析式可很好地用来计算和优化光纤参变放大的光纤长度。     

Ka波段二次谐波损耗波导回旋行波管非线性分析

 建立了由损耗段和铜段组成的波导结构的Ka波段二次谐波回旋行波放大器理论模型,并进行了非线性理论研究。基于稳定性分析,确定35 GHz TE₀₂模二次谐波回旋行波放大器的基本工作参数:波导半径为1.02 cm,电子注工作电压为90 kV,工作电流为25 A,工作磁场为0.642 6 T,横纵速度比为1.2;然后通过模拟详细分析了工作电流、波导损耗和速度零散等因素对该放大器性能的影响。研究表明：在该结构中损耗段可以有效地抑制模式竞争从而提高输出功率和带宽;工作电流对输出功率的影响存在最大值;速度零散对输出功率有很大的影响。     

高功率光子晶体光纤放大器实验研究

利用掺Yb³⁺的光子晶体光纤作为光纤放大器的增益介质,采用反向抽运方式,分别从理论和实验方面研究了不同信号的增益特性,在信号光功率为6W,抽运光功率为160W时,获得了104W的输出功率.实验发现,当抽运功率大于一定值时,放大器输出会有一定的不稳定性,并影响输出功率的进一步提高. 关键词： 光子晶体光纤 光纤放大器 反向抽运 高功率     

多芯光纤激光器中共相位模式功率的提高

 以七芯光纤激光器为例,提出一种提高多芯光纤激光器总输出光功率中共相位模式所占比例的方法,即把多芯光纤激光器作为种子光源,输出信号光再经过多芯光纤放大器进行放大。基于速率方程组对激光器和放大器中的模式竞争进行了数值分析。计算表明：激光器输出端与放大器输入端之间距离存在一个最佳值,以使得放大器输出信号中低阶模式功率占总输出功率的比例最低,可以下降到小于1%。研究表明：级联放大系统可以有效增强共相位模式同时抑制低阶模式,比传统的塔耳博特腔激光器具有更好的光束质量。     

基于硅波导的喇曼光放大器

在硅波导上添加反向偏压的PIN结构,当波导产生受激喇曼散射时,可以将波导中双光子吸收(TPA)产生的光生自由载流子扫出波导,降低了波导的非线性损失,极大地提高了硅波导中泵浦光对信号光的喇曼增益。为了应用已经非常成熟的硅工艺,并且应用硅波导使器件小型化,根据法布里-帕罗(F-P)腔和行波放大器理论,在硅波导两端的解理面蒸镀增透膜,应用这种波导的喇曼效应设计了一种光放大器,即基于硅波导的喇曼光放大器。建立了计算放大器增益的方程,给出了不同波导长度和输入功率情况下的放大器增益,得出适当增加波导长度和泵浦光功率可以得到较高喇曼增益的结论。基于硅的光放大器有较高的饱和功率且没有泵浦源的限制,通过调整泵浦激光的波长可以放大不同波长的信号光。     

具有线性张角结构和非线性张角结构的锥形激光放大器的分析

利用分步傅里叶算法求解锥形半导体激光放大器中的稳态行波方程,对线性张角结构和非线性张角结构波导形状的激光放大器进行光学和热学性质的数值模拟。通过比较两种结构的激光放大器的输入电流-输出功率曲线,输入功率-输出功率曲线和光丝形成数量,研究放大器中光丝的形成机理,解释两种激光放大器中不同光场分布的原因。结果表明,非线性张角结构的放大器不仅能使增益分布和光场分布更契合,而且能减小波导边缘反射光和入射光的耦合,所以有着更高的光光转换效率和更稳定的模式输出。     

CO-FBMC/OQAM系统导频辅助的时域相位噪声补偿

对1550 nm铒镱共掺光纤放大器不同温度下的输出功率以及经过高温老化后的输出功率和光谱进行了实验研究。通过对比高温和常温下铒镱共掺光纤放大器的输出功率随泵浦功率的变化曲线,得出铒镱共掺光纤放大器在高温环境工作可提高输出功率,且不同长度的增益光纤对温度的敏感性不同的结论。以Arrhenius模型为加速老化模型对增益光纤进行温度为85℃、时间为876 h的加速老化实验,结果表明在常温环境工作5 y后铒镱共掺光纤放大器的输出功率将降低11.24%,放大的自发辐射噪声将增加4.1 dB,根据指数模型预测得到该放大器的使用寿命为7.57 y,这些结果为改善光纤放大器的输出性能和寿命预测提供了理论基础和实验依据。     

高功率同轴波导Ubitron放大器的高频特性研究

 用三维非线性理论，对高功率同轴波导Ubitron放大器进行了研究。该Ubitron放大器采用环形相对论电子注与同轴波导的TE₀₁模相互作用。通过数值模拟，在Ku波段得到了2.24MW的输出功率，其效率为10.9%，带宽为35% 。数值计算结果表明：电子注的自场导致饱和功率减少，频带变窄，增益下降。使用摇摆器幅值渐变，器件工作效率从10.9%提高到12.3%。     

电子回旋共振放大器的理论分析

本文利用动功率定理求解静磁场中运动的相对论性电子束与波导中电磁行波的相互作用问题。引入电子群聚函数这一概念,它有利于分析放大器中电子群聚过程。通过数值计算分析了互作用区中回旋电子与行波场之间能量交换全过程。计算结果表明:纵向波数的虚部不为常量,因此增益特性并非线性;在高效率、高功率输出下要求静磁场B₀高度稳定;调整工作参量降低输出功率值,则对磁场稳定度要求也降低。这些性质可通过对电子群聚过程的分析得到解释。 关键词：     

阶跃掺杂Er∶Al2O3光波导放大器增益特性数值模拟

构建了纵向阶跃非均匀掺杂的掺铒Al2O3光波导放大器理论模型,利用有限元法、速率方程和传输方程,数值模拟了放大器的净增益特性.计算结果表明：阶跃掺杂掺铒Al2O3光波导放大器提高了抽运效率,净增益和信号光输出功率比优化后的均匀掺杂光波导放大器分别提高了9.2%和90.5%,长度却缩短了16.9%.     

阶跃掺杂Er∶Al_2O_3光波导放大器增益特性数值模拟

构建了纵向阶跃非均匀掺杂的掺铒Al2O3光波导放大器理论模型,利用有限元法、速率方程和传输方程,数值模拟了放大器的净增益特性·计算结果表明阶跃掺杂掺铒Al2O3光波导放大器提高了抽运效率,净增益和信号光输出功率比优化后的均匀掺杂光波导放大器分别提高了9.2%和90.5%,长度却缩短了16.9%.     

Analysis of output statistics of single and double pass Er-doped LiNbO3 waveguide amplifiers

Based on the photon statistics master equation of the linear amplifier, this paper presents a theoretical evaluation of the following important amplifier parameters: the output mean photon number, the standard deviation, the Fano factor, the statistical fluctuation and the spontaneous emission factor for single and double pass configurations and for forward and backward pumping schemes in the case of an Er3+-doped LiNbO3 waveguide amplifier. The simulations were performed using the small gain approximation and the above-mentioned device characteristics versus pump powers, waveguide length and signal wavelength are evaluated. This revised version was published online in November 2006 with corrections to the Cover Date.     

大功率宽频带G波段三次谐波放大器设计研究

针对G波段真空电子器件对大功率、宽频带信号源的需求,开展了G波段三次谐波放大器研究。该放大器利用E波段行波管非线性互作用中的三次谐波电流,通过级联谐波互作用段实现G波段电磁波放大。高性能、实用化G波段宽频带大功率源的设计方案采用非半圆弯曲波导边界折叠波导,利用微波管模拟器套装（MTSS）软件对G波段三次谐波放大器进行模拟优化,结果显示,器件在15 GHz范围内可实现谐波输出功率＞3.6 W,转换增益＞33.3 dB,电子效率＞0.36%。与其他工作在该频段的小型化太赫兹辐射源相比,谐波放大器在输出功率和带宽方面性能优越,为后续开展G波段三次谐波放大器的实际研制工作提供了设计基础。     

Modelling of 980 nm pumped EDWAs: Spectroscopic variations associated to fabrication process

In this work the optical amplification, in the small signal regime, at 1.5 m in Zn-diffused, proton exchange and reverse proton exchange Er³⁺-doped waveguide amplifiers (EDWAs) based on LiNbO₃ under 980 nm excitation has been modelled, including the dominant up-conversion channel activated by this pumping wavelength. The overlapping integrals method has been used to investigate how the spectroscopic changes, induced by the waveguide fabrication technique, affect the optical amplifier performance. In particular, it has been found that either the amplifier threshold and the maximum gain achievable are spectroscopy-dependent and therefore fabrication-dependent.     

Analysis of the gain and noise characteristics of fibre Brillouin amplifiers

A theoretical analysis is performed of the transfer characteristics, gain, amplified spontaneous emission noise, on/off ratio and nonlinear phase shift of a fibre Brillouin amplifier, taking into account a possible signal detuning from the line centre and the nonlinear pump power depletion effect. Among other features, it is shown that the amplified spontaneous emission noise is reduced at higher signal levels and that detuning the signal reduces the amplifier gain in the linear regime and increases the spontaneous noise power in the saturation regime. As a consequence, the on/off ratio is significantly degraded by such an effect.     

Analysis for amplifying characteristics of Er-Yb-co-doped microring resonators

Formulas of the transfer functions and the output power gains are presented, amplifying characteristics are analyzed, and simulation is performed for an Er³⁺-Yb³⁺-co-doped microring resonator. Under the pump wavelength of 980 nm and the central signal wavelength of 1550 nm, the dependence of the output power gain on the amplitude coupling ratio, pump power, signal power, and the dopant concentration is investigated, the output spectra are presented, and the optimization of the device is carried out. Simulated results show that the output power gain of this device is much larger than that of the Er³⁺-Yb³⁺-co-doped straight waveguide amplifier (EYCDWA) with the same waveguide parameters.     

Experimental demonstration of a W-band (94 GHz) gyrotwystronamplifier

A four section, TE₀₁ mode W-band gyrotwystron amplifier has been designed, built, and tested. The circuit consists of three cavities followed by a traveling wave output section, each operating near the fundamental cyclotron frequency. The gyrotwystron has produced 50 kW peak output power, corresponding to 17.5% efficiency for a 57 kV, 5 A electron beam; the amplifier is zero drive stable at the operating point. The measured center frequency is 93.9 GHz with a full width half maximum instantaneous bandwidth of 925 MHz. These results represent a substantial improvement in the power-bandwidth product over previously demonstrated gyro amplifiers in this band. The small signal and saturated gains were 39 and 30 dB, respectively. The measured results are in good agreement with theoretical predictions     

An optically pumped nanophotonic InP/InGaAlAs optical amplifier integrated on a SOI waveguide circuit

A small footprint integrated optical amplifier on Silicon-on-insulator is proposed in this article. By choosing to use optical pumping to drive the device, electrical contacting is avoided and the active waveguide can be made as thin as 100?nm, maximizing the optical confinement in the quantum well layers. Furthermore, the optical pumping is done through the silicon waveguide layer to optimally use the pump light. This leads to a compact device with high gain. We show 8?dB gain in pulsed regime in a 100?μm long device using a peak pump power of only 4.5?mW, while a comparable gain using an electrically pumped device would require an order of magnitude higher power consumption. This is an important step towards a CMOS-compatible optical amplifier for intra-chip optical interconnects.