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采用波长532nm的高能脉冲激光束照射40.68MHz激发的容性耦合氧等离子体,并给处于激光束中央的探针施加一定的正偏压,由此诊断氧等离子体的空间电位和电负度.实验结果表明,探针偏压从0V逐渐增加时,探针搜集的电流波形从V型向倒U型转变,转变电压点正是电负性等离子体的空间电位.尝试着给出了运用激光诱导光致剥离技术诊断电负性等离子体空间电位的经验方法.另外,探针上施加的正偏压高于等离子体空间电位时,等离子体的电负度基本保持不变.实验还表明,氧等离子体的电负度随着射频输入功率的增加而呈现下降的趋势.     

甚高频激发的容性耦合Ar+O_2等离子体电负特性研究

利用探针辅助的脉冲激光诱导负离子剥离诊断技术对掺入5%O_2的容性耦合Ar等离子体电负特性进行了诊断研究.首先详细解析了脉冲激光剥离后探针的电信号,分析了探针偏压在低于或高于空间电位下的探针收集信号特征;根据探针偏压与探针收集信号之间的依赖关系,用来描述Ar+O_2等离子体电负特性的等离子体电负度被定义为脉冲激光剥离出的电子电流与偏压高于空间电位的探针收集到的背景电子电流的饱和比值,并对等离子体电负度随放电气压、射频功率以及轴向位置的变化进行了诊断测量.实验结果表明等离子体的电负度随着射频功率的增加而减小、随着放电气压的上升而变大;由于非对称电极的分布特性,在轴向方向上靠近功率电极时等离子体电负度有升高的趋势,这种趋势可能与鞘层边界附近二次电子的动力学行为以及负离子的产生与消失过程有关.     

电负性气体的掺入对容性耦合Ar等离子体的影响

本文利用朗缪尔静电探针对掺入了电负性气体O₂, Cl₂, SF₆的由4068 MHz激发的单射频容性耦合Ar等离子体进行了诊断测量. 测量结果表明: 随着电负性气体流量的增加, 电子能量概率分布函数出现了高能峰, 高能峰且有向高能侧漂移的现象; 电负性气体掺入Ar等离子体后显著降低了等离子体的电子密度; 电子温度随着电负性气体流量比的增加而升高. 另外, 本文还测量了掺入三种电负性气体后在不同流量比下的混合气体等离子体的电负度α . 对实验现象进行了初步的解释. 关键词： 电负性等离子体 电子密度 电子温度 电负度     

KT—TC托卡马克上不同限制器偏压下等离子体p约束改善的实验研究

在ＫＴ－５Ｃ托卡马克上，采用多块组合的可偏压限制器控制等离子体边缘电场，进行了改善等离子体的边缘参数及其机制的研究。实验显示，限制器的正、负偏压都能改变等离子体电位，但正偏压更胶儿，能有效地建立边缘电场，进而抑制边缘扰动改善等离子体约束。利用可移动静电探针，测得正偏压期间边缘电子温度Ｔｅ（ｒ）、电子密度ｎｅ（ｒ）、空间电位Ｖｐ（ｒ）分布变陡，与计算得到的边缘粒子通量Г（ａ０）减少，整体粒子约束时间     

KT-5C托卡马克上不同限制器偏压下等离子体p约束改善的实验研究

在KT-5C托卡马克上,采用多块组合的可偏压限制器控制等离子体边缘电场.进行了改善等离子体的边缘参数及其机制的研究.实验显示,限制器的正、负偏压都能改变等离子体电位,但正偏压更有效,能有效地建立边缘电场,进而抑制边缘扰动改善等离子体约束.利用可移动静电探针,测得正偏压期间边缘电子温度T_e(r)、电子密度n_e(r)、空间电位V_p(r)分布变陡,与计算得到的边缘粒子通量Г(a_(?))减少,整体粒子约束时间τ_p增加结果是一致的.     

脉冲磁过滤阴极弧沉积中基片台悬浮电位研究

通过测量脉冲磁过滤阴极弧等离子体沉积系统中的基片台悬浮电位，发现了弧源接地方式对基片台悬浮电位与等离子体电位影响很大。当阳极接地时基片台悬浮电位可达－60V，而弧源悬浮时却只有－5V。因此，要获得相似沉积条件的沉积薄膜，弧源接地方式不同，给基片施加偏压也应有所不同。     

高通量中性原子氧束流的发生与控制

 采用微波同轴耦合氧气放电产生高密度氧等离子体, 经磁场约束后与一施加负偏压的金属板碰撞复合并反射, 得到通量在10¹³~10¹⁶atom/cm²×s范围可控, 动能约为6-10eV的中性氧原子束流。用双探针技术对生成的氧等离子体进行了诊断测量。根据聚酰亚胺在原子氧作用下的剥蚀率对原子氧束流进行了标定测量。     

用偏压限制器控制KT—5C托卡马克等离子体边缘电场的实验研究

在托卡马克ＫＴ－５Ｃ上，我们首次采用可灵活组合的多块限制器进行了施加偏压以控制等离子体边缘电场的实验。结果表明，在本装置上限制器加正偏压优于加负偏压、正偏压改变等离子体边缘电场效果更明显。偏压限制器收集面积、纵场和偏置电压的大小对偏压效果的影响都是敏感的。改变限制器收集面积和偏压导致的边缘电场的变化最终将趋于饱和。     

用偏压限制器控制KT－5C托卡马克等离子体边缘电场的实验研究

在托卡马克ＫＴ－５Ｃ上，我们首次采用可灵活组合的多块限制器进行了施加偏压以控制等离子体边缘电场的实验，结果表明，在本装置上限制器加正偏压优于加负偏压，正偏压改变等离子体边缘电场效果更明显。偏压限制器收集面积、纵场和偏置电压的大小对偏压效果的影响都是敏感的。改变限制器收集面积和偏压导致的边缘电场的变化最终将趋于饱和，另外发现，偏压限制器与等离子体柱的相对位置对等离子体边缘电场的影响也是重要的。     

MM-4中电位和分布实验

本文描述了用静电探针测量探针悬浮电位的方法,给出了MM-4电位分布的实验结果。结果表明,轴向电位分布不对称;在等离子体中沿轴向和径向存在双离子位阱。在离子能谱测量中观察到双离子温度。产生这样电位分布的机制,归于会切系统中的斯托沫区和电子枪的不同工作方式。测量的等离子体电位为-200——300V。     

大功率YAG激光-MAG复合热源的光谱诊断与分析

大功率YAG激光-MAG复合热源具有广泛的工业应用前景,其等离子体状态的诊断对于指导复合热源发展方向、优化复合参数具有重要意义。通过建立的中空探针光谱扫描系统,采用荷兰Avaspec-FT-2快速数字光谱仪,横向扫描焊接电弧等离子体,采集YAG激光-MAG复合等离子体不同空间位置的光谱;通过计算得到其特定辐射谱段的空间分布,对比激光复合前后等离子体辐射的变化;并结合高速摄像照片,探讨其耦合机理。进一步选取特定谱线(FeⅠ),采用Boltzmann图法对复合热源等离子体的空间电子温度进行计算;研究结果表明,YAG激光-MAG电弧复合后,等离子能量更靠近熔池,集中作用于焊接试板,其能量作用区域展宽;在电弧中心区造成电子温度上升。     

A short history of heavy ion beam probing

The author describes some aspects of research on controlled thermonuclear fusion as an energy source, starting in the late 1950s. There was a need for new diagnostic techniques for studying high temperature plasmas. The author proposed a diagnostic for measuring plasma density by probing a deuterium plasma with a deuterium beam and measuring the proton production from the D-D nuclear reaction. By the mid 1960s, it was possible to do so. After carrying out a D-D measurement, the author suggested switching over to an H₂⁺ beam and looking for an H⁺ signal. The H+ was loud and clear and that was the last of the nuclear measurements. One of the first things done using the molecular break-up of the H₂⁺ to measure the density of the hollow cathode arc plasma was a study of a coherent instability. The frequency response wasn't sufficient to measure the instability directly, so a Langmuir probe was used to detect the instability. The Langmuir probe gave a signal from a fixed spatial location but the beam probe signal was swept across the plasma giving 2D spatial resolution. This was the first detailed mapping of a plasma instability. Attempts to apply the ion beam probe to measuring the plasma current density in the ST Tokamak are described. Heavy ion beam probing measurements using hollow cathode arcs as target plasmas made it possible to measure T_e at low temperatures and to identify space potential fluctuations. Installation of a beam probe on the Laser Initiated Target Experiment are described, along with work on the ELMO Bumpy Torus, the VERSATOR Tokamak, TMX, TEXT, ISX-B, the Ergodic Magnetic Limiter and ATF     

Measurement of electronegativity during the E to H mode transition in a radio frequency inductively coupled Ar/O_2 plasma

This paper presents the evolution of the electronegativity with the applied power during the E to H mode transition in a radio frequency(rf)inductively coupled plasma(ICP)in a mixture of Ar and O2.The densities of the negative ion and the electron,as well as their ratio,i.e.,the electronegativity,are measured as a function of the applied power by laser photo-detachment combined with a microwave resonance probe,under different pressures and O2 contents.Meanwhile,the optical emission intensities at Ar 750.4 nm and O 844.6 nm are monitored via a spectrograph.It was found that by increasing the applied power,the electron density and the optical emission intensity show a similar trench,i.e.,they increase abruptly at a threshold power,suggesting that the E to H mode transition occurs.With the increase of the pressure,the negative ion density presents opposite trends in the E-mode and the H-mode,which is related to the difference of the electron density and energy for the two modes.The emission intensities of Ar 750.4 nm and O 844.6 nm monotonously decrease with increasing the pressure or the O2 content,indicating that the density of high-energy electrons,which can excite atoms,is monotonically decreased.This leads to an increase of the negative ion density in the H-mode with increasing the pressure.Besides,as the applied power is increased,the electronegativity shows an abrupt drop during the E-to H-mode transition.     

Optical tomography of the laser's Gaussian electric field

A method for the measurement of the spatial distribution of birefringence, caused by intense femtosecond laser pulses in condensed plasma, is presented for the case of a Gaussian laser beam. For that only two light intensities are to be measured on the probe beam in a polariscope.     

用于高温等离子体电子密度测量的摩尔偏折仪

 摩尔偏折测量术通过测量探针光束经过不均匀介质后光线的偏折来估算介质的折射率。基于这一理论,研制了实用的摩尔偏折仪,利用软X射线激光作为探针来探测高温高密等离子体的电子密度,结合软X射线激光实验做了初步的演示。     

A study of the radiation of a Nd:YAG laser-MIG hybrid plasma

To study the coupling of a Nd:YAG laser beam and a MIG arc with the spectrum of the plasma, a new hollow probe method is used to collect radiation from specific points within the arc plasma. With the probe, the spatial distributions of the MIG arc radiation with and without the Nd:YAG laser hybrid plasma are collected and analyzed by a fiber spectrometer. Through analysis of the spectrum, radiation in the ultraviolet (Fe II dominated), visible (Fe I dominated) and infra (Ar I dominated) spectral zones are acquired for comparison of the difference between the MIG and Laser-MIG hybrid welding processes. The electronic temperature is calculated using the Boltzmann plot method and the electronic density is calculated using the Stark broadening method. The results show that the Laser-MIG hybrid welding processes cause the plasma energy to focus on the center of the welding arc and approach the welding pool. An ionizing duct abundant with Fe ions will be formed near the position of the impinging laser beam, which makes the welding arc stable. The electronic temperature of the Laser-MIG hybrid welding arc is a little higher than that of the MIG. The electronic density of Laser-MIG hybrid welding is higher than that of the MIG.     

靶材偏置低电压对激光等离子体诱导靶上电势信号的影响

针对激光等离子体在Cu靶上诱导产生的电势信号展开实验研究,主要讨论了靶材偏置低电压时对电势信号的影响. 实验结果表明,外加低电压时,靶上电势信号呈现单峰脉冲结构,且靶材偏置负压时为正脉冲,偏置正压时为负脉冲,脉冲幅值随偏置电压增大而增大. 通过对靶上电势信号演化特性的详细分析,从等离子体荷电效应出发,结合靶材偏压造成的电场效应成功解释了靶材偏压对靶上电势信号的影响. 关键词： 激光等离子体 电势 金属元靶 偏置电压     

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利用在线椭偏仪对非晶碳氢膜进行了光学常数、沉积率和刻蚀率的测量。在无直流负偏压或偏压较小时,薄膜呈现聚合物结构,折射率和消光系数较小;当增加直流负偏压时,薄膜的折射率和消光系数显著提高,所成膜为硬质非晶碳氢膜。在以CH4作为气源进行沉积时,随着偏压的增加,沉积率先升高再降低,在偏压为-100V时,沉积率为最大。H2/N2(30%N2)的混合气体的刻蚀率要比单独用H2作为刻蚀气体的刻蚀率要大。对于CH4/N2(30%N2),在偏压从0V增加到300V过程中,在大约50V时,基底上的薄膜有一个从沉积到刻蚀的转化过程。