Mechanoluminescence in Centrosymmetric Crystals

The paper reports that the mechanoluminescence (ML) is not an inherent property of only the non-centrosymmetric crystals. The ML may appear in number of centrosymmetric crystals due to variety of processes. The ML of 82 centrosymmetric crystals are reported and different models are proposed for the ML excitation. The models proposed are: space charge electrification model, triboelectrification model, phase transformation model, gas adsorption model, chemical reaction model, thermal population model, molecular deformation model, cleavage electrification model, defective piezoelectric phase model, dislocation defect stripping model, dislocation unpinning model, dislocation annihilation model, charged dislocation model and incandecent light emission model. It is shown that on the basis of the proposed model, intense mechanoluminescent materials with desired nature and characteristics may be prepared.     

Satatistical Model of Mechanoluminescence in Crtstals

The present paper reports on a statistical model of the mechanoluminescence (ML) excitation in crystals where attempts have been made to explain stress, temperature-, strain rate-, activator concentration dependence and several other aspects of ML. It is found that ML emission should take place only during the period at which stress will change with time. The total ML intensity should be directly proportional to the square of the stress and there should be phase difference between the ML pulse and the applied stress pulse. It is found that the ML intensity should decrease faster with temperature as compared to the corresponding photoluminescence intensity. within the limit of concentration quenching the ML intensity should increase directly with the defect centre concentration. The ML intensity should increase with the stress rate or strain rate of the solids. Furthermore, the concept of mechanoluminescent and non-mechanoluminescent materials is explored.     

Cleavage Mechanoluminescence in Crystals

When a crystal is cleaved, initially the mechanoluminescence (ML) intensity increases linearly with time, attains an optimum-value I_m at a particular value of timet_m, and then decays exponentially with time. Cleavage ML provides a new tool to determine the velocity, v of cracks in crystals, and it may be given by v = H/t_m, where H is the thickness of the crystal. Both, the peak ML intensity I_m and total ML intensity I_T increase linearly with the area of newly created surfaces A as well as with the surface charge density γ. The ML intensity decreases with temperature primarily due to the decrease in the surface charge density. Beyond a particular temperature, the surface charge density may decrease to such a value where the breakdown of gases and solids may not be possible and thereby the ML may not appear. Depending on the prevailing conditions either the ML emission resembling gas discharge or other types of the luminescence of solids, or that having these two characters may be obtained. There exists a good correlation between the theoretical and experimental results obtained for cleavage ML in crystals.     

Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates

Production and measurement of active nitrogen atoms (N+N*), which consist of ground state nitrogen atoms N and excited state nitrogen atoms N*, in an inductively coupled radio frequency discharge for the growth of group III nitrides and their alloys using a molecular beam epitaxy (MBE) were studied. Two discharge modes of the low brightness (LB) and the high brightness (HB) used in this study to produce excited nitrogen molecules (N₂*) and dissociated active nitrogen atoms (N+N*). The flux of (N+N*) was measured by a Langumuir-like electrode due to the self-ionization of adsorbed (N+N*) on a negatively biased electrode. The self-ionization, which emits electrons from (N+N*), forms an atom current and is confirmed using different electrodes such as Pt and CuBe and different electrode area. The atom current was calibrated by the grown GaN thickness in a VG80H MBE machine. The calibrated flux of (N+N*) per atom current in the VG80H machine is 5.5×10⁻⁴ ML/s/nA, where ML is monolayer. The atom current is useful to monitor the flux of chemically active nitrogen atoms N+N* for growth of group III nitrides and their alloys. Activity modulation migration enhanced epitaxial growth (AM-MEE) was demonstrated as an application of the measurement of atom current for the growth of the group III nitrides.     

Theoretical approach to the mechanoluminescence excitation in solids

The present paper reports the results of some theoretical approach made to the studies of Mechanoluminescence (ML) of solids. It is found that the ML intensity depends on three major factors, the ML efficiency, damping factor, and elastic complience. It is concluded that the non-viscous solids with high elastic compliance possessing luminescence centres with appropriate efficiency may exhibit intense ML. It is shown that the ML emission should take place only during the time at which there will be a change of applied pressure with time. There should be a phase difference between the applied pressure and the emitted ML signal.     

极化方法对PZT-4压电陶瓷性能的影响

Pb(Zr_1-xTi_x)O₃ (PZT)由于具有优异的综合性能而成为应用最广泛的压电陶瓷。之前研究工作证明了与直流极化(DCP)和交流极化(ACP)相比,采用交流极化和直流极化相结合的方法能进一步提高弛豫铁电单晶材料的压电性能。本工作报道了直流极化、交流极化和交流极化+直流极化后PZT-4压电陶瓷的介电性能和压电性能,探究了直流极化、交流极化和交流极化+直流极化的最佳极化条件。在最佳交流极化+直流极化条件下, PZT-4 压电陶瓷的压电常数(d₃₃)为350 pC/N,相比直流极化(305 pC/N)、交流极化(320 pC/N)分别提高了15%和9%。交流极化后的PZT-4陶瓷样品的应变值(0.08%)高于进行直流极化样品的(应变值0.05%),表明交流极化可以有效提高PZT-4陶瓷的应变值,但是交流极化后应变曲线的滞后增大不利于器件应用,交流极化对硬性压电陶瓷的影响还需要进一步探讨。     

Elastic, piezoelectric, and dielectric properties of α-GeO2 single crystals

The elastic, piezoelectric, and dielectric characteristics of α-GeO₂ crystals are studied at room temperature. The measurements were performed by the resonance method on crystals grown on α-quartz seeds from solutions in the recirculating mode. In germanium dioxide crystals, the piezoelectric moduli have high values. The characteristic features of variations of the electromechanical and elastic properties in crystals with the quartzlike structure observed earlier are confirmed.     

Growth and Optical Characterization of CdI2 Single Crystals

Single crystals of CdI₂ were grown by employing the horizontal zone refining method. Emission spectra of these crystals were recorded at room temperature and liquid nitrogen temperature. Various emission parameters such as optical gain coefficient, lifetime, gain, stimulated emission cross section were evaluated for the various emission components. The results show high gain at low temperature whereas very low value at rmm temperature. This has been explained by invoking the existence of self trapped excitons in the crystal.     

Charge storage and screening of the internal field in GaN/AlGaN quantum wells

The optical spectra of a set of high quality quantum wells, with well characterized structural parameters, are presented here. We propose a quantitative calculation for the measured emission energies which takes into account the spontaneous and piezoelectric polarization fields and the field-screening effect due to electron-hole photogenerated pairs; such an effect is especially effective in wide QW samples which in fact behave like mesoscopic capacitors.     

以磷化铁为添加剂沿(111)面生长磷掺杂金刚石大单晶

掺杂是调控金刚石性能的一种重要手段。本文采用温度梯度法,在5.6 GPa、1 312 ℃的条件下,选用Fe₃P作为磷源进行磷掺杂金刚石大单晶的合成。金刚石样品的显微光学照片表明,随着Fe₃P添加比例的增加,金刚石晶体的颜色逐渐变深,包裹体数量逐渐增加,晶形由板状转变为塔状直至骸晶。金刚石晶形的变化表明Fe₃P的添加使生长金刚石的V形区向右偏移,这是Fe₃P改变触媒特性的缘故。红外光谱分析表明,Fe₃P的添加使金刚石晶体中氮含量上升,这说明磷的进入诱使氮原子更容易进入金刚石晶格中。激光拉曼光谱测试表明,随着Fe₃P添加比例的增加,所合成的掺磷金刚石的拉曼峰位变化不大,其半峰全宽(FWHM)值变大,这说明磷的进入使得金刚石晶格畸变增加。XPS测试结果显示,随着Fe₃P添加比例的增加,金刚石晶体中磷相对碳的原子百分含量也会增加,这意味着添加Fe₃P所合成的金刚石晶体中有磷存在。     

Recent Developments on High Curie Temperature PIN-PMN-PT Ferroelectric Crystals

Pb(In(0.5)Nb(0.5))O(3)-Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) (PIN-PMN-PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their higher usage temperatures range (> 30°C) and coercive fields (~5kV/cm), meanwhile maintaining similar electromechanical couplings (k(33)> 90%) and piezoelectric coefficients (d(33)~1500pC/N), when compared to their binary counterpart Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3). In this article, we reviewed recent developments on the PIN-PMN-PT single crystals, including the Bridgman crystal growth, dielectric, electromechanical, piezoelectric and ferroelectric behaviors as function of temperature and dc bias. Mechanical quality factor Q was studied as function of orientation and phase. Of particular interest is the dynamic strain, which related to the Q and d(33), was found to be improved when compared to binary system, exhibiting the potential usage of PIN-PMN-PT in high power application. Furthermore, PIN-PMN-PT crystals exhibit improved thickness dependent properties, due to their small domain size, being on the order of 1μm. Finally, the manganese acceptor dopant in the ternary crystals was investigated and discussed briefly in this paper.     

改进的升华法制备氮化铝单晶体

采用改进的升华法在氮气环境下制备氮化铝单晶体.通过优化实验条件制备出了六角形的高质量的氮化铝单晶体.实验发现,在坩埚的不同区域得到的氮化铝晶体的大小和形态有所不同.讨论了温度梯度对氮化铝晶体尺寸大小和形态的影响.     

钛宝石晶体的泡生法生长和闪烁发光性能

采用泡生法生长了115 kg级大尺寸钛宝石(Ti:Al2 O3)晶体,晶体外形完整无开裂,制备了口径达?300 mm的高质量大口径钛宝石单晶样品.在X射线和α粒子激发下测试了晶体的闪烁发光性能.结果表明,Ti:Al2 O3晶体的闪烁发光包含近红外和近紫外发光.近红外发光来源于Ti3+特征发射,效率较高,衰减时间慢.近紫...     

弛豫铁电单晶的多功能特性及其器件应用

以Pb(Mg1/3 Nb2/3)O3-PbTiO3(PMN-PT或PMNT)为代表的弛豫铁电单晶具有远高于常用锆钛酸铅Pb(Zrx Ti1-x)O3(PZT)陶瓷的压电性能,引起了基于新一代压电单晶的功能器件研究热潮.本研究团队在国际上率先利用Bridgman方法生长出了大尺寸、高质量PMN-PT等弛豫铁电单晶(d33...     

The Excitation Wavelength Dependence of Adenine Cation Single Crystal Luminescence

The excitation wavelength dependence of luminescence measured in adenine cation crystals at 77 K is reported. The observed variations of all the luminescence parameters exhibit a marked correlation with a changing penetration depth of the excitation light. The alterations of luminescence intensity, vibronic structure of emission spectra, emission polarization and phosphorescence decay were attributed mainly to a variable contribution of the emission from local excited states which correspond to a different trap ensembles in the crystal bulk and near the surface, respectively.     

Application of Rosin–Rammler model for analysis of CSD in sugar crystallization

Crystal‐size distribution (CSD) is one of the most important parameters in sugar production. The objective is to grow crystals of uniform sizes or narrow CSD. CSD appears to be determined by the growth‐rate history of the crystals and the relative supersaturation (SS) of the solution from which crystals growth takes place. Three methods for preparation of nucleation seeds were described and used for industrial crystallization of raw and white sugars; these are wet milling filtered sugar (ML), agitating saturated solution (AS) and powdered sugars (PD). Rosin–Rammler (RR) and mathematical models were adopted to investigate CSD and the uniformity of the produced crystals. Higher uniformity coefficients were reported for the AS seeded crystals than the other two seeding methods. Furthermore, higher crystal contents were obtained for the AS seeded white sugar batches in comparison.     

Study of the surface heterogeneity of topographic and electric nature by atomic force microscopy by the example of triglycine sulfate

Triglycine sulfate crystals with an ideal (010) cleavage plane are used as model objects to reveal problems in interpreting atomic force microscopy (AFM) images of surfaces with nonuniform charge distribution. Specific microrelief features of two types are found: lenslike formations with different contrast and rounded protrusions/valleys of different size but fixed height. An analysis of their evolution with a change in temperature and under an electric field and mechanical impacts has made it possible to separate relief elements from the crystal domain structure. The interpretation proposed is confirmed by the multimode AFM data. The specific features of the images of dynamic domains and aged domains (which cannot undergo polarization reversal) are studied. The domain-wall width found in the AFM measurements depends on the technique used and the specificity of probe-surface interaction; it varies from 9 to 2000 nm. The most reliable data on the domain-wall width in triglycine sulfate crystals are provided by piezoelectric force microscopy, according to which the wall width does not exceed 30 nm.     

制作压电器件氧化锌单晶的评述

氧化锌材料制作压电器件已经有很长的研究历史,自从Robert F.Service在1997年报道氧化锌可以在短波长范围实现蓝光输出后,氧化锌单晶在质量和体积方面取得了很大的研究进展。通过对比分析20世纪60年代以来氧化锌单晶压电特性的研究结果,指出迄今为止制作压电器件的氧化锌单晶仍然需要继续优化。     

Growth and Optical Properties of Doped LiTaO3 Single Crystals

Single crystals of lithium tantalate (LiTaO₃) doped with Pr, Nd + Yb and Tm were grown by the Czochralski method. A thermal system with 50 mm diameter iridium crucible and two different afterheaters (active and passive) was checked with respect to temperature distribution in a pulling region. The obtained crystals were up to 20 mm in diameter and up 50 mm in length. Crystals were poled, and the Curie temperature was determined for specimens cut of from different parts of single crystals. The polarized absorption spectra, time resolved emission spectra and emission lifetime of Pr³⁺ doped LiTaO₃ crystals were measured. An intense emission from the ³P₀ level was observed. Optical properties of the Yb³⁺ ions excited by energy transfer from Nd3+ ions have been researched for LiTaO₃:Nd, Yb crystals.     

晶体中负离子配位多面体结晶方位、形变与晶体压电、铁电性

本文研究了压电、铁电晶体中负离子配位多面体的结晶方位与形变,提出了压电晶体中同一种负离子配位多面体的结晶方位是一致的.在铁电晶体中,负离子配位多面体发生形变,伴随着晶体发生顺电-铁电相变,并从这一基本过程出发,对铁电体相变的形成机理进行了讨论.