共查询到7条相似文献,搜索用时 0 毫秒
1.
S. Matthies 《Crystal Research and Technology》1980,15(4):431-444
The explicit relationship between the orientation distribution function and the pole figures measured by means of diffraction experiments is derived and discussed. It is shown that these pole figures have a higher symmetry than the ODF, i.e. that it is impossible to reproduce unambiguously the ODF from pole figure datas only. From this circumstance follows that the ODF reproduced by help of usual methods are falsified and contain ghost phenomenas. 相似文献
2.
S. Matthies 《Crystal Research and Technology》1980,15(10):1189-1195
The known reproduction methods for determination of the orientation distribution function from pole figures are discussed from the view of the structure of their solutions of the problem. The exact solution of the reproduction problem is derived. 相似文献
3.
S. Matthies 《Crystal Research and Technology》1980,15(5):601-614
By means of illustrative examples the appearance of ghost phenomena in orientation distribution functions derived by standard methods from pole figure datas is demonstrated in a qualitative manner. It is shown, that as a rule ghost phenomena have no influence on the results of calculations of macroscopic properties of textured samples. 相似文献
4.
S. Matthies 《Crystal Research and Technology》1980,15(11):1323-1328
The exact solution of the problem \documentclass{article}\pagestyle{empty}\begin{document}$ \tilde P_{hi} (y) \to \tilde f(g) $\end{document} is discussed from the view of the structure of the reprojection relationship and its numerical realization. 相似文献
5.
S. Matthies 《Crystal Research and Technology》1981,16(9):1061-1071
The reliability of ODF's reproduced from pole figures, which were derived in diffraction experiments, is discussed from a general point of view. Standard functions simplifying investigations in texture analysis are presented. 相似文献
6.
J. Pospiech 《Crystal Research and Technology》1980,15(12):1481-1487
A detailed analysis of the relation between the orientation distribution function (ODF) and the pole figure is made. 相似文献
7.
LPCVD poly Silicon deposition form silane has been investigated for limited conditions regarding temperature, silane input and pumping speed. It has been found that layer growth is controlled by a chemical reaction of 0.5th-order in consequence of which growth rate linearly decays along the axis of an open isothermal reactor tube. The slope of that decay is determined not only by the reaction rate constant but also by linear gas velocity within the tube and that part of total substrate surface area that is effectively exposed to silane at each wafer position. In conseqence growth rate decay is the steeper not only the higher temperature will be chosen but also the slower gas velocity is adjusted and the smaller wafers are separated to each other. The kind of how axial layer growth rate distribution is effected by changing wafer spacing is a proof for the heterogeneous reaction mechanism. The silicon forming reaction is characterised by an activation energy of about 52 kcal/mole. 相似文献