Quantitative Bestimmung der Zusammensetzung von Ga1−xAlxAs-Epitaxieschichten mit der Elektronenstrahl-Mikroanalyse (ESMA)

Several methods of correcting the X-ray intensity in the electron probe microanalysis were examined for getting the local concentrations of Ga, Al and As in Ga_1−xAl_xAs epitaxial layers. Most correct results were obtained by combining the method of BIRKS for the Al-determination with that of DUNCUMB /REED /SPRINGER for the Ga-determination. In this case the mean departure from 50% for the sum of the Ga and Al atom-percents is only −0.1%. Equations for the mutual conversion of concentrations into masses, necessary for the practical use, are given in an appendix.     

Zum Wachstum von AIIIBV-Halbleitern aus nichtstöchiometrischen Schmelzen (II) Dotierung von GaAs und Ga1−xAlxAs mit Zink

Doping of GaAs and Ga_1−xAl_xAs with Zn in the LPE process was studied by a radioanalytical method. It is found that Zn diffuses from the Ga-(Al)-As-Zn-solution into the n-GaAs substrate before epitaxial growth starts. This “pre-diffusion” and the following diffusion of Zn out of the epitaxial layer into the substrate results in three regions with distinct Zn-graduation in the vicinity of the pn-junction. There are no striking differences for GaAs/GaAs and Ga_1−xAl_xAs/GaAs structures. The Zn concentration in GaAs epitaxial layers decreases exponentially from the substrate up to the layer surface. From this profile the temperature dependence of the Zn segregation coefficient is calculated. At 900°C a value k_eff = 5,2 · 10⁻² is found. The doping profile in Ga_1−xAl/As layers is more complex. It is influenced by the changings of temperature during the growth of the layer and by the nonuniform Aldistribution over the layer thickness.     

The influence of ambient gas atmosphere on the liquid and solid composition at liquid phase epitaxial growth of GaAs–Alx-Ga1−xAs layers

Epitaxial gallium arsenide and gallium aluminium arsenide layers were grown from gallium solution on chromium-doped semi-insulating gallium arsenide. The effect of residual water concentration in the ambient gas atmosphere on change of aluminium in Al_xGa_1−xAs was determined. It was shown that a water concentration less than 5 ppm is necessary to grow epitaxial layers with high reproducible XAlAs-content and low carrier concentration.     

On a Possibility of Determining Nonuniformities in AlxGa1−xAs Solid Solution Compositions

Both surface and bulk nonuniformities in Al_xGa_1−xAs solid solution compositions were determined by surface radiography of epitaxial Al_xGa_1−xAs GaAs hetero-junctions with diffused radioactive Zn⁶⁵ atoms.     

Infrared optical characterization of epitaxial layer – substrate systems (II). Experimental results for AlxGa1−xAs/GaAS

Infrared reflectance and transmittance spectra and Raman scattering spectra of the epitaxial layer-substrate system Al_xGa_1−xAs/GaAs with compositions in the range x = = 0.08–0.49 are measured in the wavenumber range from 40 to 4000 cm⁻¹. In analysing the spectra in terms of the respective theoretical relations for an optical two-layer system the thickness of the layers, the optical mode characteristics and the free carrier parameters are determined. From a comparison with existing literature data for Al_xGa_1−xAs it is concluded that infrared optical measurements on epitaxial layer-substrate systems can be successfully employed to evaluate the material parameters of epitaxial layers with thicknesses down to a few micrometers.     

On the quaternary NGa-NAl-NAs-NGe phase diagram

It was stated that the thickness of Ge-doped GaAs- and Al_xGa_1−xAs epitaxial layers, respectively, grown by equilibrium cooling from a gallium rich flux, varies with the Ge concentration in the liquid phase. This relationship was applied to calculate an quaternary Ga-Al-As-Ge phase diagram by means of the law of mass action.     

Preparation of Al?Ga?P?As heterostructures

The present paper reports on the results of an investigation of crystallization of multilayer structures with a narrow-gap semiconductor surrounded by two wide-gap ones in the Al-Ga-P-As system on GaAs and GaP substrates. Influence of the lattice parameters' difference on the value of thermal stress in structures with a composition gradient was determined by the bend of structures separated from the substrate. It has been proved that with the P concentration in solid solutions being less than 1% heterojunctions with less tensions than in the Al–Ga–As system are available. A new method of obtaining Al_xGa_1–xP_yAs_1–y solid solutions with the concentration of P proportional to that of Al has been worked out on the basis of which multilayer heterolight-emitting structures have been prepared.     

Investigation of multiple layer heterojunction structures by means of an electron-beam microprobe-analyzer

Multiple layer heterojunction structures in the AlAs GaAs system are investigated by means of an X-ray microanalyzer. The quantitative determination of Ga and Al is extensively discussed. The correction for atomic number, absorption and secondary fluorescence are considered. For Al_xGa_1–xAs layers it is favourable for quantitative analysis the AlK_α-emission for x < 0,3 and the GaK_α-emission for x > 0.3. Some multilayer heterojunction structures of laser and luminescence diodes are shown in form of their AlK_α microprobe diagrams.     

Phase Equilibrium of the Ga–Al–Sb system

Employing the method of liquid-phase epitaxy (LPE) solid-solutions of Ga_1–xAl_xAl_xSb (0 ≦ x ≦ 0.8) have been obtained. The dependence of Sb solubility on Al concentration in the liquid phase at 403°C, 452°C, 500°C has been established. The dependence of AlSb concentration in the solid phase on the composition of the liquid phase has been investigated at 452°C. Using the chemical constants equilibrium method, the phase equilibrium of the Ga–Al–Sb system in the region of liquid phase composition near the Ga-rich corner of the phase diagram has been calculated. The comparison of experimental and calculated data for the liquid and solid phases shows their agreement within the limits of experimental error.     

AlxGa1−xN bulk crystal growth: Crystallographic properties and p–T phase diagram

The recent results on the growth of the Al_xGa_1−xN bulk single crystals (0.22≤x≤0.91) from solution in liquid Ga under high nitrogen pressure are discussed. We focus on the influence of temperature and the choice of the Al source on the crystal growth. The experiments involving different sources of aluminum such as Al metal, pre-reacted polycrystalline Al_yGa_1−yN and AlN powder are compared. The best results were achieved using pre-reacted polycrystalline Al_yGa_1−yN or/and AlN. Single-crystal structure refinement data of these Al_xGa_1−xN crystals are presented. We also update the p–T phase diagram of (Al,Ga)N compound at high N₂ pressure for various Al content, which is the basis for (Al,Ga)N synthesis.     

Vapour Phase Epitaxy of GaxIn1−xAs in the Ga?In?HCl?AsH3?H2-System Using a Mixed Ga/In Source

The mixed crystal composition of Ga_xIn_1−xAs layers is analysed as a function of the composition of a mixed Ga/In source during VPE in the hydride system. Experimental results are compared with thermodynamic calculations. Both thermodynamics of the deposition reactions and thermodynamies of the souree reactions are considered in the calculations.     

Information about the Growth Process from Aluminium Concentration Profiles in Ga1−xAlxAs Liquid Phase Epitaxial Layers

The variation in the composition of Ga_1−xAl_xAs LPE layers with x < 0.37 as a function of layer thickness is examined by electron beam microprobe analysis. From the combination of these results with the experimentally established relation between layer thickness and cooling interval information is obtained about the onset of homogeneous nucleation in the LPE growth.     

X-ray investigation on GaAlAs/GaAs epilayers bending at temperatures 77–750 K

The Bond method of precise lattice constants measurements and double crystal (+, −) (004) reflections were applied to measure lattice constants, lattice mismatch, thickness of the layers and samples bending in temperature 77–750 K. The results enabled to calculate the ratio of GaAs and Ga_1−xAl_xAs elastic constants as well as thermal expansion coefficients.     

Calculations of homogeneous region in Ga1−xAlxAs and GaAs1−xPx ternary solid solutions

Ternary solid solutions of A^IIIB^V compounds are considered as pseudobinary A(x)^IIIB(x)^v compounds, where the behaviour of A(x)^III and B(x)^v pseudoatoms is quite similar to A^III and B^v atoms in a binary A^IIIB^v crystal. Weak dependence of point defect contribution into Gibb's energy of A^IIIB^v crystal on its defect nature, random character of ternary solid solutions of A^IIIB^v compounds allow to use already for binary compounds developed formalism in the determination of component thermodynamic potentials of solid solution. Basing on literature data for the equilibrium solidus of AlAs the approximation for the temperature dependence of thermodynamic potential of an AB quasimolecule in A^IIIB^v crystal is revised. This result together with the well-known parameters for the equilibrium liquidus in Ga–P, Ga–As, and Al–As systems were used for calculations of the nonstoichiometric factor at the boundary of a homogeneous region in Ga_1−xAl_xAs and GaAs_1−xP_x ternary solid solutions. The results are compared with the known literature data.     

Study of the relationship between the crystal structure of nanolayers and electrical properties in Al x Ga1? x As/In y Ga1? y As pseudobinary heterostructures by double-crystal X-ray diffraction

The structural parameters of individual layers of samples of a Al _x Ga_1−x As/In _y Ga_1−y As/GaAs pseudomorphic heterostructure have been determined by double-crystal X-ray diffraction. A relationship of the technological parameters of fabrication of heterostructures with their structural and electrical properties is established. The increase in the mobility of the 2D electron gas in the samples under study, caused by the increase in the growth temperature of the Al _x Ga_1−x As spacer layer and the decrease in the time of silicon δ doping from the two sides of the quantum well, correlates well with the degree of the sample structural quality. Original Russian Text ? R.M. Imamov, I.A. Subbotin, G.B. Galiev, 2008, published in Kristallografiya, 2008, Vol. 53, No. 2, pp. 210–213.     

Kristallographische Polarität von AIIIBV - Mischkristallen

From the measurement of X-ray intensity differences of opposite {111}-surfaces in Ga₁ – _xAl_xAs- und Ga₁ – _xAl_xSb-mixed crystals with high Al concentration it was concluded which of the two surfaces is terminated by a layer of the group V atoms. The results are correlated with etching studies.     

The electrical and structural properties of InyGa1 ? yAs/InxAl1 ? xAs/InP quantum wells with different InAs content

In _x Al_{1 − x} As/In _y Ga_{1 − y} As/In _x Al_{1 − x} As/InP HEMT structures has been investigated with a change in the InAs molar fraction both in the quantum well and the buffer layer. The electrical parameters of the samples are measured at different temperatures. The structural parameters of the layers and the characteristics of the interfaces between them are determined by double-crystal X-ray diffraction. An increase in the Hall mobility and electron concentration, as well as in the structural quality of the samples, is observed alongside an increase in the InAs molar fraction in the quantum well. It is established that high electron mobility is retained at small (to 5%) mismatches between the buffer layer and substrate.     

A study of the vacancy-defect distribution in a GaAs/AlxGa1−xAs multi-layer structure grown at low temperature

We have grown a multilayer structure of GaAs and Al_xGa_1−xAs (x=0.25) by molecular beam epitaxy at low substrate temperature (250°C) in order to investigate the effects of annealing on arsenic precipitation and vacancy-defect formation. The as-grown heterostructure contained ∼5×10¹⁷ cm⁻³ gallium vacancies, but information about the individual layers was lost because the layer width (∼45 nm) was smaller than the average positron diffusion length (∼70 nm). Annealing at 500 and 600°C showed increases in the S-parameter (above the bulk value) of ∼2.5% and ∼1.5%, respectively, smaller than for a single LT-GaAs layer (∼3–4%). We explain this phenomenon by suggesting that the excess arsenic which migrates from the material with the higher precipitate/matrix energy (LT-Al_xGa_1−xAs) reduces the gallium vacancy concentration in the LT-GaAs and hence the S-parameter. This hypothesis is supported by SIMS data which shows a build-up of As in the LT-GaAs layers, and TEM images which indicate that arsenic precipitation occurs to a greater extent in the LT-GaAs than in the LT-Al_xGa_1−xAs.     

Strain relaxation in multilayer III–N structures on Si(111) substrates

X-ray diffractometry and X-ray scattering reciprocal space maps have been used to study strain relaxation in a complex buffer composed of seven intermediate layers of Al _x Ga_{1 ? x} N composition with different values of x, decreasing with an increase in the distance from the substrate. The layers have been grown by hydride metalorganic vapor phase epitaxy on silicon and sapphire substrates. Differences in the structural quality of the first four layers of a multilayer buffer grown on different substrates have been revealed. A gradual smoothing out of these differences in the next three layers with an increase in the layer serial number has been shown. The last grown intermediate Al _x Ga_{1 ? x} N layer and the GaN layer grown on it have identical thicknesses and degrees of mosaicity, regardless of the substrate type. Device structures grown on a complex buffer demonstrate emission in approximately the same wavelength range.     

Lattice Constant of AlAs

The value of AlAs lattice constant was established in two ways. First, by extrapolating the results for Al_xGa_1−xAs LPE (a_AlAs = 5.6608 Å) and MBE grown epitaxial layers (a_AlAs = 5.6620 ± 0.0001 Å). Second, for AlAs MBE-grown epitaxial layer (a_AlAs = 5.6620 ± 0.0001 Å). The measurements were performed with a high accuracy X-ray diffractometer and compared with results of photoluminescence measurements.