Preferential etching of Si–Si bond in the microcrystalline silicon germanium

Hydrogenated microcrystalline silicon germanium (μc-Si_1?xGe_x:H) films were investigated as a bottom cell absorber in multi-junction solar cells. μc-Si_1?xGe_x:H films were prepared using very high frequency (VHF, 60 MHz) plasma enhanced chemical vapor deposition (PECVD) systems working pressure of about 1.5 Torr. The precursor flow rates were carefully controlled to determine the phase transition point and to improve the crystallinity of μc-Si_1?xGe_x:H. A relatively high plasma power was necessary to have the high hydrogen (H₂) dilution. Raman spectroscopy study showed transition steps from amorphous to microstructure morphology as hydrogen dilution increasing. Crystallite Si–Ge and Ge–Ge bonds were occurred at relatively higher H₂ dilution compare to crystallite Si–Si bond. The rapidly increased Ge content as increasing the H₂ dilution is believed mainly due to the different decomposition rate of silane (SiH₄) and germane (GeH₄). The other reason of high Ge content even at the low GeH₄ precursor flow rate is probably due to the preferential etching of silicon atom by H₂. The preferential etching of Si–H possibly occurred in very highly concentrated H₂ plasma due to the preferential attachment of Si–H. The compositions of μc-Si_1?xGe_x:H films measured using RBS were Si_0.83Ge_0.17, Si_0.67Ge_0.33 and Si_0.59Ge_0.41 at H₂/SiH₄ flow rate of 60, 80 and 100, respectively. μc-Si_1?xGe_x:H films showed the dark (σ_d) and photo conductivity (σ_p) of about 10^?7 and 10^?5 S/cm, respectively and photo response (σ_p/σ_d) was about 10². This study will present the comprehensive evaluation of crystallization behavior of μc-Si_1?xGe_x:H films.     

Morphologies and phase compositions of copper–zinc coatings obtained by electrolysis

The influence of adding zinc nitrate(II) to a copper electrolyte on the morphologies, phase compositions, and specific surface areas of cupriferous coatings is studied. It is shown that copper–zinc coatings have high specific surface areas and exhibit good catalytic activities in the decomposition of formic acid.     

Influence of the Si–O–C interplayer on the flexural behaviors of C/Si–C–N composites

Carbon fiber reinforced Si–C–N matrix composite(C/Si–C–N) with a Si–O–C interlayer (C/Si–O–C/Si–C–N) was fabricated via CVI and PIP process. The flexural behaviors of C/Si–O–C/Si–C–N were investigated using the three-point-bending method and the SEM technique. The results indicated that the flexural strengh of the C/Si–O–C/Si–C–N increases with increasing temperature and the modulus of the composite is essentially unchanged. The strength of C/Si–O–C/Si–C–N is comparable to that of C/PyC/Si–C–N, and the role of Si–O–C interlayer in C/Si–C–N can rival that of the PyC interlayer. The weaker interfacial bonding and the larger thickness of Si–O–C interlayer make a contribution to this at RT while the thinner interlayer and unstable structure of Si–O–C interphase do it above 1300 °C.     

Balance the oxidation resistance and mechanical properties of C/Si–C–N composite by a Si–O–C interphase

Carbon fiber reinforced Si–C–N matrix composite with a Si–O–C interphase (C/Si–O–C/Si–C–N) was fabricated via chemical vapor infiltration and polymer impregnation and pyrolysis process. The mechanical properties and oxidation behaviors of C/Si–O–C/Si–C–N were investigated using three-point-bending test and thermogravimetry. The results indicated that the oxidation resistance of C/Si–O–C/Si–C–N was improved as compared to C/Si–C–N with pyrolytic carbon (PyC) interphase (C/PyC/Si–C–N). The higher oxidation resistance of C/Si–O–C/Si–C–N attributed to the high inoxidizability of Si–O–C interlayer and low thermal stress in matrix. The flexural strength of C/Si–O–C/Si–C–N rivaled that of C/PyC/Si–C–N and the modulus was higher than that of C/PyC/Si–C–N. The suitable interphase and the optimized interface bonding can get the high oxidation resistance of the composites with the mechanical properties maintained.     

Investigation of the Models of Magnetic Dendrimers by the Wang–Landau Method

Physics of the Solid State - The thermodynamic properties of the models of magnetic dendrimers were studied by the Monte Carlo method. The system state density is calculated; the ground state...     

Comparative PEEM and AES study of surface morphology and composition of Cu films on Si and 3C–SiC substrates

We have conducted photoemission electron microscope (PEEM) and Auger electron spectroscopy (AES) studies on the Cu(30 nm)/3C–SiC(1 0 0) and Cu(30 nm)/Si(1 0 0) samples annealed successively up to 850 °C. With PEEM, lateral diffusion of Cu atoms on the 3C–SiC substrate was observed at 400 °C while no lateral diffusion was seen for the Cu/Si(1 0 0) samples up to 850 °C. The 30 nm Cu thin film on 3C–SiC began to agglomerate at 550 °C, similar to the case for the Cu/Si(1 0 0) system. No further spread of the lateral diffusion region was found in subsequent annealing up to 850 °C for Cu/3C–SiC while separated regular-sized dot structures were found at 850 °C for Cu/Si(1 0 0). AES studies of Cu/Si(1 0 0) system showed partial interface reaction during Cu deposition onto the Si(1 0 0) substrate and oxidation of the resultant Cu₃Si to form SiO₂ on the specimen surface at room temperature in air. Surface segregation of Si and C was observed after annealing at 300 °C for Cu/Si(1 0 0) and at 850 °C for the Cu/3C–SiC system. We have successfully elucidated the observed phenomena by combining PEEM and AES considering diffusion of the constituent elements and/or reaction at interfaces.     

Generation of phase nuclei by solitons of the new “undulator” type in martensitic phase transitions of crystalline materials

The microdynamics of large-amplitude nonlinear lattice vibrations of plutonium and uranium materials has been investigated at high reactor temperatures in the ranges of martensitic phase transitions. Topologically new large-amplitude solitons of the “undulator” type have been revealed. Transverse and longitudinal “undulator” solitons in crystals with hexagonal and cubic symmetry, depending on the direction of motion, have different kinematic and amplitude characteristics, which differ from the characteristics of the previously known solitons. The transverse “undulator” solitons, like electrons in undulators, are observed with periodic atomic displacements orthogonal to the direction of soliton propagation. The longitudinal “undulator” solitons with displacements of atoms in the direction of soliton propagation are characterized by periodic delays with two-step velocities on the trajectory in a certain analogy with two-period engineering undulator devices. It has been shown that, at high energies, such “undulator” solitons of two types generate nuclei of a new phase in early stages of structural phase transitions.     

Overview of the Mössbauer results obtained on silicon‐rich iron silicide epitaxial phases on Si

Iron silicide phases, grown on or into single‐crystals of silicon, can be produced by different techniques as reactive and molecular beam epitaxy, and ion implantation followed by recrystallisation processes. Different phases have been obtained depending on the experimental conditions: thickness and substrate temperature for deposited layers, ion implantation fluence, substrate temperature and recrystallisation technique for buried silicides. In most of these investigations, Mössbauer Effect has been used to provide short range order information about the system. We present here a summary of these results, which in some cases are compared with those obtained by other characterisation techniques.     

Fabrication of two types of one-dimensional Si–C nanostructures by laser ablation

Two types of one-dimensional (1D) nanostructures—amorphous silicon carbide (SiC) nanowires, 5–30 nm thick and 0.5–2 μm long, and carbon nanotubes (CNTs) filled completely with crystalline SiC nanowires, 10–60 nm thick and 2–20 μm long—were synthesized by the laser ablation of carbon-silicon targets in the presence of high-pressure Ar gas up to 0.9 MPa. All the CNTs checked by transmission electron microscopy contained SiC, and no unfilled CNTs were produced. We discuss the growth of the two nanostructures based on the formation of molten Si–C composite particles and their instabilities leading to the precipitation of Si and C.     

Effect of the temperature of megaplastic deformation on the redistribution of carbon in Fe–Ni–C austenite

Structural phase transitions induced by megaplastic deformation at temperatures of 80–573 K are investigated in high-carbon Fe–Ni austenite of the invar range of compositions. Phase transformations change their direction from the nonequilibrium dissolution of graphite particles upon low-temperature (80 and 293 K) deformation and the activation of carbon precipitation from the fcc matrix to graphite upon high-temperature (373–573 K) deformation, due to the structure being saturated with point defects.     

Investigation on the 773 K isothermal section of Dy–Ni–Si ternary phase diagram by X-ray powder diffraction

The 773 K isothermal section of the Dy–Ni–Si ternary system was investigated and constructed by X-ray powder diffraction in this paper. Eighteen ternary phases (DyNiSi, DyNi₂Si₂, DyNiSi₂, Dy₂Ni₃Si₅, DyNiSi₃, Dy₂NiSi₃, Dy₃Ni₆Si₂, DyNi₁₀Si₂, Dy₄NiSi₇, DyNi₂Si, DyNi₅Si₃, DyNi₄Si, Dy₃NiSi₂, DyNi₆Si₆, Dy₈Ni₃₁Si₁₁, Dy₃Ni₂Si₄, Dy₄Ni₅Si and Dy₉Ni₂Si₁₄) were confirmed to exist in this work. In those ternary phases, Dy₉Ni₂Si₁₄ is a new phase, Dy₂NiSi₃ and Dy₄NiSi₇ have solid solution phenomena and the solid solution ranges are Dy_33.3Ni_14.7–18.7Si_52–48 and Dy₄Ni_0.3–1.2Si_7.7–6.8, respectively. We constructed 14 two phase regions and 52 three phase regions in the Dy–Ni–Si ternary phase diagram at 773 K. Because the phase relation is not very clear between 66.7 and 50 Si at.% in the Dy–Si binary system, we use dot lines to estimate tentative phase regions in this region.     

Decreasing the electromagnetic observability of carbon fiber polymer–matrix composites by using epoxy-coated carbon fibers

The electromagnetic observability of epoxy–matrix composites containing continuous carbon fibers was decreased by using epoxy-coated carbon fibers. The attenuation of electromagnetic waves at 1.0–1.5 GHz upon reflection was increased from 1.3 to 1.7 dB, while the attenuation upon transmission was decreased from 30 to 24 dB. The effect is attributed to the decreased transverse electrical conductivity of the composite due to the epoxy coating. The epoxy coating caused the tensile strength and modulus of the composite to decrease by about 10%, while the elongation at break was not affected.     

Deposition of silicon–carbon coatings from the plasma of a non-self-sustained arc discharge with a heated cathode

Amorphous hydrogenated carbon doped with silicon oxide (a-C:H:Si:O), which is referred to as silicon–carbon coatings in this work, consists of thin amorphous films, which are used as commercial solid lubricants due to their higher stability under extreme environmental conditions as compared to amorphous hydrogenated carbon. The deposition of silicon–carbon coatings from the plasma of a non-self-sustained arc discharge with a heated cathode is considered. Silicon–carbon coatings are deposited using polyphenul methylsiloxane as a precursor at a flow rate of 0.05 mL/min in an argon atmosphere at a pressure of 0.1 Pa. A high-frequency power supply is used to apply a high-frequency bias voltage to a substrate during deposition. After deposition, the mechanical properties of the coatings are studied. The maximum hardness of the coating is 20 GPa at a minimum friction coefficient of 0.16 and a wear rate of 1.3 × 10^–5 mm³ N^–1 m^–1. Energy dispersive analysis shows that the coatings contain a significant content of carbon and oxygen (about 80 and 15%, respectively) and a low content of silicon (about 5%).     

Allotropic forms of carbon in the Invar Fe–Ni–C alloy before and after plastic deformation by upsetting

The effect of cold plastic deformation by upsetting (e = 1.13) on structure and hybridised bonds of carbon in the fcc Invar Fe-30.9%Ni-1.23% C alloy was studied by means of X-ray phase analysis and X-ray photoelectron spectroscopy. Carbon precipitates along grain boundaries and inside of grains in the alloy after annealing and plastic deformation were revealed. The presence of mainly sp²- and sp³-hybridised C–C bonds attributing to graphite and amorphous carbon as well as the carbon bonds with impurity atoms and metallic Fe and Ni atoms in austenitic phase were revealed in the annealed and deformed alloy. It was shown for the first time that plastic deformation of the alloy results in partial destruction of the graphite crystal structure, increasing the relative part of amorphous carbon, and redistribution of carbon between structural elements as well as in a solid solution of austenitic phase.     

Crystallographic features of the approximant H (Mn7Si2V) phase in the Mn–Si–V alloy system

The intermetallic compound H (Mn₇Si₂V) phase in the Mn–Si–V alloy system can be regarded as an approximant phase of the dodecagonal quasicrystal as one of the two-dimensional quasicrystals. To understand the features of the approximant H phase, in this study, the crystallographic features of both the H phase and the (σ → H) reaction in Mn–Si–V alloy samples were investigated, mainly by transmission electron microscopy. It was found that, in the H phase, there were characteristic structural disorders with respect to an array of a dodecagonal structural unit consisting of 19 dodecagonal atomic columns. Concretely, penetrated structural units consisting of two dodecagonal structural units were presumed to be typical of such disorders. An interesting feature of the (σ → H) reaction was that regions with a rectangular arrangement of penetrated structural units (RAPU) first appeared in the σ matrix as the initial state, and H regions were then nucleated in contact with RAPU regions. The subsequent conversion of RAPU regions into H regions eventually resulted in the formation of the approximant H state as the final state. Furthermore, atomic positions in both the H structure and the dodecagonal quasicrystal were examined using a simple plane-wave model with 12 plane waves.     

Mathematical Simulation of the Process of Growing a CdTe Single Crystal by the Obreimov–Shubnikov Method

Physics of the Solid State - For the first time, the process of growing a CdTe crystal by the modified Obreimov–Shubnikov method using the technique of self-nucleation from the initial...     

Modification of the Structure of Ti–Al–Si–Cu–N Gradient Coatings by Mechanical Tests

Technical Physics - The structural state in the zones of indentation and scratch testing of Ti–Al–Si–Cu–N gradient coatings has been studied using dark-field electron...     

Influence of “ytterbium nanofilm–silicon Si(111)” interfaces on the valence of ytterbium

The work function of ytterbium films of nanometer thickness (from 1 to 16 monolayers) has been measured. The films have been prepared by sputtering of ytterbium in an ultrahigh vacuum on n- and p-type Si(111)7 × 7 silicon substrates with an electrical resistivity from 1 to 20 Ω cm. It has been shown that, in the films with a thickness of less than 8 monolayers, the work function depends nonmonotonically on the amount of ytterbium deposited on the surface (Friedel oscillations), whereas in the films with a thickness of more than 8 monolayers, the work function takes on a constant value (3.3 eV) that exceeds the work function for macroscopic samples (2.6 eV). This difference is associated with the fact that, during the formation of an Yb–Si interface, the large difference in the work functions of ytterbium and silicon (4.63 eV) leads to the transfer of a significant fraction of electrons from the metal to the semiconductor. This transfer of electrons from the film to silicon is accompanied by the lowering of the Yb 5d level below the Fermi level. As a result, the valence of the metal and, accordingly, the work function increase.