Comparative infrared study of silicon and germanium nitrides

Silicon and germanium nitride (Si₃N₄ and Ge₃N₄) are isomorphic compounds. They have been studied in the β-phase which crystallises in the hexagonal system. The space group is P6₃/m (C_6h²).The IR transmission spectra of these two nitrides are very similar but the absorption frequencies of germanium nitride are shifted to the lower values in comparison with silicon nitride. We noted that the atomic mass effect is the only cause of this shift for the streching modes but not for the bending modes.     

Sol‐Gel‐Process in the Ammono‐System – a Novel Access to Silicon Based Nitrides

Controlled coammonolysis of elementalkylamides in aprotic organic solvents at low temperatures have been shown to result in the formation of polyazanes. The synthetic procedure developed may be addressed as “sol‐gel‐route in the ammono system”. Pyrolysis of these novel polymer precursors gave access to multinary nitrides. For the model systems Si(NHMe)₄/B(NMe₂)₃, Si(NHMe)₄/Ti(NMe₂)₄, and Si(NHMe)₄/Ta(NMe₂)₅ polymeric boro‐, titano and tantalosilazanes were obtained. Pyrolysis in ammonia at 1000 °C yielded amorphous silicon boron nitride, silicon titanium nitride and silicon tantalum nitride powders; further heating of the nitride powders at 1500 °C in nitrogen atmosphere led to the formation of partly crystalline composites of α‐Si₃N₄ and amorphous silicon boron nitride for the Si/B/N system, a composite of finely dispersed TiN and amorphous silicon titanium nitride for the Si/Ti/N system, and crystalline TaN and amorphous silicon nitride for the Si/Ta/N system. Furthermore, the structure and pyrolysis chemistry of the polymeric intermediates, as well as the morphology of the pyrolysis products, were studied by NMR, MAS‐NMR, FT‐IR, DTA‐TG‐MS, XRD, SEM, EDX and elemental analyses.     

A nuclear microprobe method for the simultaneous determination of silicon and nitrogen profiles in metals

A nuclear microprobe method has been developed for the simultaneous determination of silicon and nitrogen concentration profiles in metals. The method was based on the reactions²⁸Si(d, p₀)²⁹Si and¹⁴N(d, p₀)¹⁵N plus¹⁴N(d, β₀)¹²C with measurement of emitted charged particles during irradiation with 1.9 MeV deuterons. The nitrogen sensitivity was ten times that for silicon and the minimum concentrations detected were 0.002% and 0.03% respectively. The method was successfully applied to the measurement of silicon and nitrogen profiles in alloys contacted with silicon nitride at high temperature.     

Microwave assisted volatilization of silicon as fluoride for the trace impurity determination in silicon nitride by dynamic reaction cell inductively coupled plasma-mass spectrometry

A low pressure microwave assisted vapor phase dissolution procedure for silicon nitride and volatilization of in situ generated SiF₄ has been developed using H₂SO₄, HF and HNO₃ for the determination of trace impurities present in silicon nitride. Sample was taken in minimum amount (0.5 mL for 100 mg) of H₂SO₄ and treated with vapors generated from HF and HNO₃ mixture in presence of microwaves in a closed container. An 80 psi pressure with ramp and hold times of 30 min and 60 min respectively, operated twice, resulted in 99.9% volatilization of Si. Matrix free solutions were analyzed for impurities using DRC-ICP-MS. The recoveries of Cr, Mn, Fe, Ni, Co, Cu, Zn, Sr, Y, Cd, Ba and Pb were between 80 and 100% after volatilization of Si. The blanks were in lower ng g⁻¹ with method detection limits in lower ng g⁻¹ to sub ng g⁻¹ range. The method was applied for the analysis of two silicon nitride samples.     

Time‐of‐flight secondary ion mass spectroscopic characterization of the nitrogen profile of shallow gate oxynitride thermally grown on a silicon substrate

Silicon oxynitride has been used as a shallow gate oxide material for microelectronics and its thickness has been reduced over the years to only a few tens of angstroms due to device size scaling. The nitride distribution and density characteristic in the gate oxide thus becomes imperative for the devices. The shallow depth profiling capability using time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) has huge potential for the nitrogen characterization of the shallow gate oxide film. In this article, both positive and negative spectra of TOF‐SIMS on silicon oxynitride have been extensively studied and it was found that the silicon nitride clusters Si_xN^? (x = 1–4) are able to represent the nitrogen profiles because their ion yields are high enough, especially for the low‐level nitride doping in the oxide, which is formed by the annealing of nitric oxide on SiO₂/Si. The gate oxide thickness measured by the TOF‐SIMS profiling method using ¹⁸O or CsO profile calibration was found to correlate very well with transmission electron microscope measurement. The nitrogen concentration in the gate oxide measured using the TOF‐SIMS method was consistent with the results obtained using the dynamic SIMS method, which is currently applied to relatively thicker oxynitride films. Copyright © 2012 John Wiley & Sons, Ltd.     

Room-temperature ferromagnetism in silicon oxide/silicon nitride composite films

Room-temperature ferromagnetism has been observed in silicon oxide/silicon nitride composite films formed on Si substrates at different substrate temperatures, and the ferromagnetic properties of the samples have been found to depend on the silicon nitride content of the films. It is proposed that the ferromagnetism is related to the interface states between the silicon oxide particles and silicon nitride particles. The saturation magnetization (M_S) reached its maximum value in the film produced at a substrate temperature of 400 °C. A further study on the magnetic properties of the film has been carried out using first-principles calculations based on the density functional theory. The calculations suggest that the magnetic moments of the film originate from N 2p and Si 2p states in the vicinity of the hetoro-interface.     

Silicon Nitride Capacitive Chemical Sensor for Phosphate Ion Detection Based on Copper Phthalocyanine – Acrylate‐polymer

In this work, we report the development of a highly sensitive capacitance chemical sensor based on a copper C,C,C,C‐ tetra‐carboxylic phthalocyanine‐acrylate polymer adduct (Cu(II)TCPc‐PAA) for phosphate ions detection. A capacitance silicon nitride substrate based Al−Cu/Si‐p/SiO₂/Si₃N₄ structure was used as transducer. These materials have provided good stability of electrochemical measurements. The functionalized silicon‐based transducers with a Cu(II)Pc‐PAA membrane were characterized by using Mott‐Schottky technique measurements at different frequency ranges and for different phosphate concentrations. The morphological surface of the Cu(II)Pc‐PAA modified silicon‐nitride based transducer was characterized by contact angle measurements and atomic force microscopy. The pH effect was also investigated by the Mott‐Schottcky technique for different Tris‐HCl buffer solutions. The sensitivity of silicon nitride was studied at different pH of Tris‐HCl buffer solutions. This pH test has provided a sensitivity value of 51 mV/decade. The developed chemical sensor showed a good performance for phosphate ions detection within the range of 10⁻¹⁰ to 10⁻⁵ M with a Nernstian sensitivity of 27.7 mV/decade. The limit of detection of phosphate ions was determined at 1 nM. This chemical sensor was highly specific for phosphate ions when compared to other interfering ions as chloride, sulfate, carbonate and perchlorate. The present capacitive chemical sensor is thus very promising for sensitive and rapid detection of phosphate in environmental applications.     

Micro-thermal analysis of thermal conductance distribution in advanced silicon nitrides

A micro-thermal analysis technique was applied to investigate advanced silicon nitride materials, which exhibit high thermal conductivity. Local thermal properties in the microstructure were evaluated, and the grain boundaries were observed to have lower thermal conductance than the Si₃N₄ grains. It was found that thermal conductance both in the grains and boundaries was lowered by the addition of the sintering aid Al₂O₃, which is soluble in Si₃N₄ grains. This indicates that high thermal conductivity in silicon nitride ceramics is achieved both by grain growth, leading to a reduction in boundary density, and by eliminating soluble elements in silicon nitride grains. This revised version was published online in August 2006 with corrections to the Cover Date.     

Preparation of Si/C/Al/N ceramics by pyrolysis of polyaluminasilazanes

Polyaluminasilazanes were prepared quantitatively by reaction of oligosilazanes (RSi(H)NH) _n (R = Me, Et) with various amounts of either trimethylaluminum, (CH₃)₃Al, or dimethylaluminum amide, (CH₃)₂AlNH₂. The products were characterized by ¹H, ²⁹Si and ²⁷Al NMR and IR spectroscopy. Alkylation of the Si H groups was observed when trimethylaluminum was used. Their pyrolysis was carried out under argon or ammonia. Ceramic residues were obtained in high yield and were characterized by elemental analysis and X‐ray powder diffraction. Formation of mixed ceramics containing silicon nitride, silicon carbide and/or aluminum nitride was observed depending on the precursor and the experimental procedure that was used. The thermal decomposition of the polyaluminasilazane between 50 and 700 °C was investigated by IR analysis of the gas evolved during the pyrolysis. Molecular aluminasilazanes were studied as model compounds. Copyright © 1999 John Wiley & Sons, Ltd.     

On the solid state reactions in the system MnSiN

The reaction processes involving the formation and decomposition of manganese silicon nitride MnSiN₂ have been investigated. Thermochemical analysis in nitriding, inert and oxidizing atmospheres was carried out for this nitride and the appearing intermediate phases. The investigation was performed using TG, DTA and DTG techniques in the temperature range 25–1500°C.     

Tailoring and investigation of surface chemical nature of virgin and ion beam modified muscovite mica

We report that the surface chemical properties of muscovite mica [KAl₂(Si₃Al)O₁₀(OH)₂] like important multi-elemental layered substrate can be precisely tailored by ion bombardment. The detailed X-ray photoelectron spectroscopic studies of a freshly cleaved as well as 12-keV Ar⁺ and N⁺ ion bombarded muscovite mica surfaces show immense changes of the surface composition due to preferential sputtering of different elements and the chemical reaction of implanted ions with the surface. We observe that the K atoms on the upper layer of mica surface are sputtered most during the N⁺ or Ar⁺ ions sputtering, and the negative aluminosilicate layer is exposed. Inactive Ar atoms are trapped, whereas chemically reactive N atoms form silicon nitride (Si₃N₄) and aluminum nitride (AlN) during implantation. On exposure to air after ion bombardment, the mica surface becomes more active to adsorb C than the virgin surface. The adsorbed C reacts with Si in the aluminosilicate layer and forms silicon carbide (SiC) for both Ar and N bombarded mica surfaces. Besides the surface chemical change, prolonged ion bombardment develops a periodic ripple like regular pattern on the surface.     

Impedimetric immunosensor for human serum albumin detection on a direct aldehyde-functionalized silicon nitride surface

In this work we report the fabrication and characterization of a label-free impedimetric immunosensor based on a silicon nitride (Si₃N₄) surface for the specific detection of human serum albumin (HSA) proteins. Silicon nitride provides several advantages compared with other materials commonly used, such as gold, and in particular in solid-state physics for electronic-based biosensors. However, few Si₃N₄-based biosensors have been developed; the lack of an efficient and direct protocol for the integration of biological elements with silicon-based substrates is still one of its the main drawbacks. Here, we use a direct functionalization method for the direct covalent binding of monoclonal anti-HSA antibodies on an aldehyde-functionalized Si-p/SiO₂/Si₃N₄ structure. This methodology, in contrast with most of the protocols reported in literature, requires less chemical reagents, it is less time-consuming and it does not need any chemical activation. The detection capability of the immunosensor was tested by performing non-faradaic electrochemical impedance spectroscopy (EIS) measurements for the specific detection of HSA proteins. Protein concentrations within the linear range of 10⁻¹³–10⁻⁷ M were detected, showing a sensitivity of 0.128 Ω μM⁻¹ and a limit of detection of 10⁻¹⁴ M. The specificity of the sensor was also addressed by studying the interferences with a similar protein, bovine serum albumin. The results obtained show that the antibodies were efficiently immobilized and the proteins detected specifically, thus, establishing the basis and the potential applicability of the developed silicon nitride-based immunosensor for the detection of proteins in real and more complex samples.     

Effect of Mixing Entropy on the Static Yield Stress of a Liquid Dispersion of Solid Particles: Comparison between Si3N4and Ca3(PO4)2Aqueous Suspensions

Experimental measurements of the static yield stresses τ of silicon nitride (SN, Si₃N₄) and α-tricalcium phosphate (TCP, α-Ca₃(PO₄)₂) aqueous dispersions have been performed for different pH values of the liquid medium and, as a result, the two τ vs pH behaviors are quite different. In agreement with the DLVO theory, the static yield stress value for silicon nitride is maximal at the isoelectric point of the slurry (pH_iep^(SN)= 8.0 ± 0.1) and, for higher and/or lower suspension pH values, it decreases progressively. On the other hand, in tricalcium phosphate dispersed systems, the maximum value of τ is not observed at the isoelectric point (pH_iep^(TCP)= 6.7 ± 0.1) but two relative maximum values, τ_aand τ_b, are observed for two suspension pH values in the acid/basic environments, namely, for pH pH_iep^(TCP). First, displacements of the pH from the isoelectric point in both environments are accompanied by an increase in τ; second, after the maximum τ values have been reached, the static yield stress decreases with the increase in the [H⁺]/[OH⁺] ions in the solution. It is shown that this phenomenon can be interpreted as an effect of the mixing entropy relative to the solid TCP aggregates, which is very sensitive to the suspension pH. Phenomenological and theoretical explanations are developed, respectively, by a heuristic recasting of the Hamaker expression for the London–van der Waals forces and by a relationship between the static yield stress and the number of solid aggregates; this relation is based on recently proposed methods for investigating the agglomeration/adsorption phenomena in a dispersed system.     

Photoacoustic infrared identification of NHn vibrations in hydrogenated amorphous silicon nitride

Volume and surface component separation in photoacoustic i.r. spectroscopy is used to demonstrate that the peak at 3350 cm⁻¹ in hydrogenated amorphous silicon nitride commonly attributed to NH_n vibrations, is due to a surface contaminant. The magnitude of this surface component obscures the underlying peaks, which become clearly visible on separation.     

Some thermodynamic aspects of nitrides in materials science

The energies of combustion in fluorine of gallium nitride and indium nitride in wurzite crystalline structure have been measured in a two-compartment calorimetric bomb, and new standard molar enthalpies of formation have been calculated: Δ_fH_m⁰(GaN(cr) 298.15 K)= –(163.7±4.2) kJ mol^–1 and Δ_fH_m⁰(InN(cr) 298.15 K)= –(146.5±4.6) kJ mol^–1 . Comparison with the recommended values of the Δ_fH_m⁰ nitrides from the literature is also presented.     

Silicon Dioxide Coating of Titanium Dioxide Nanoparticles from Dielectric Barrier Discharge in a Gaseous Mixture of Silane and Nitrogen

The coating of titanium dioxide nanoparticles with silicon dioxide has been carried out by dielectric barrier discharge (DBD) plasma treatments to enhance the thermostability of Titania for applications at high temperature processes. During the first coating processing step, a closed film of silicon nitride was produced via plasma treatment in a gaseous mixture of silane and nitrogen, while atmospheric surface contaminations got mainly removed. In the second processing step, the DBD plasma treatment in oxygen or air was used to convert the silicon nitride mainly into silicon dioxide. Remaining carbon impurities at the interfaces between titanium dioxide and silicon nitride after the nitrogen/silane plasma treatment were subsequently removed simultaneously. Atomic force microscopy and X-ray photoelectron spectroscopy were employed to study the DBD plasma treatments of the TiO₂ nanoparticles.     

Surface-near analyses of ultra thin silicon nitride layers by NRA, channeling RBS, FT IR ellipsometry and AFM

Homogeneous ultra thin silicon nitride layers (SiN_x layers) close to the surface have been produced by 10 keV ¹⁵N ₂ ⁺ molecular ion implantation and an ion current density of 10 A/cm², into single crystal silicon at room temperature. Stoichiometric SiN_x layers with thicknesses of about 28 nm (analyzed by NRA) were obtained at fluences of 1.5×10¹⁷ at/cm². NRA analyses of samples annealed by EB-RTA at T=1150° C for 15 s indicated that the N/Si ratio and the layer thickness did not change drastically. FT IR ellipsometry analyses indicated the existence of Si₃N₄ bonds in as-implanted specimens. A disordered Si layer (d-Si, typically 15 nm thick) underneath the implantation region caused by the ion implantation was found by channeling RBS analyses. The d-Si layer partly recrystallized during EB-RTA showing a thickness of 6 nm afterwards. The SiN_x layers showed no decomposition and detachment after EB-RTA. Due to EB-RTA, however, the smooth surface of the as-implanted specimens changed into a surface with remaining whisker-like structures surrounded by circular recesses as shown by AFM analyses. A model for the growth of these whisker-liker structures caused by low energy ion implantation and EB-RTA is presented on the basis of the thickness of the SiN_x layer, the existence of the d-Si layer and the special annealing process.     

Quantitative Auger depth profiling of LPCVD and PECVD silicon nitride films

Summary Thin silicon nitride films (100–210 nm) with refractive indices varying from 1.90 to 2.10 were deposited on silicon substrates by low pressure chemical vapour deposition (LPCVD) and plasma enhanced chemical vapour deposition (PECVD). Rutherford backscattering spectrometry (RBS), ellipsometry, surface profiling measurements and Auger electron spectroscopy (AES) in combination with Ar⁺ sputtering were used to characterize these films. We have found that the use of (p-p)heights of the Si LVV and N KLL Auger transitions in the first derivative of the energy distribution (dN(E)/dE) leads to an accurate determination of the silicon nitride composition in Auger depth profiles over a wide range of atomic Si/N ratios. Moreover, we have shown that the Si KLL Auger transition, generally considered to be a better probe than the low energy Si LVV Auger transition in determining the chemical composition of silicon nitride layers, leads to deviating results.

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Quantitative Auger-Tiefenprofilanalyse von LPCVD- und PECVD-Siliciumnitridfilmen

     

Factors affecting the quality of plutonium deposits by electrodeposition

Ultra-high resolution alpha spectrometry by microcalorimetry has demonstrated a dramatic improvement in alpha energy resolution over silicon based detectors. To characterize the optimal resolution obtained by the microcalorimeter alpha spectrometers, high quality deposits that are virtually massless are required; electrodeposition is the preferred method for the preparation of high quality deposits. In order to better understand the factors that contribute to lower alpha energy resolution and deposit yield, we have conducted a study to determine the effect of some of the parameters that are used for preparing electrodeposits. We have compared four different electrodeposition methods and four different substrate materials to determine the effect on the deposit yield and alpha energy resolution of plutonium as measured by full width at half maximum using silicon based detectors. Furthermore, we wanted to understand the effect of contaminants from environmental samples on electrodeposits. Therefore, the effect on deposit yield and alpha energy resolution with several common soil constituents (Al³⁺, Eu³⁺, Fe³⁺, K⁺, Lu³⁺, Mg²⁺, Na⁺, Zn²⁺) have been studied.