Identification of F+ centers in hafnia and zirconia nanopowders

Luminescence properties of undoped hafnia and zirconia nanopowders prepared by solution combustion synthesis were investigated under photo- and electron-beam excitation in 10–400 K temperature range. Along with the main luminescence band revealed in investigated materials at low temperatures at 4.2–4.3 eV and ascribed to the emission of self-trapped excitons, there are luminescence bands due to defects and impurities introduced during sample preparation. At room temperature the latter emissions dominate in the luminescence spectra as the intrinsic self-trapped exciton emission is quenched. Analysis of decay kinetics of defect centers allowed identification of F⁺ centers emission at 2.8 eV with lifetimes ∼3–6 ns in hafnia and zirconia under intra-center excitation.     

The efficiency of formation of primary radiation defects in LiF and MgF2 crystals

Processes of radiation formation of primary defects—F centers and self-trapped excitons—in lithium and magnesium fluorides, which have crystal lattices of different types and similar widths of the band gap and valence band, have been studied in a wide temperature range (11–500 K). It is shown that, along with qualitative similarity of the regularities of formation of the defects under study, LiF and MgF₂ crystals are characterized at low temperatures (11–100 K) by different relationships between the energy dissipation channels for self-trapping electronic excitations and the types of self-trapped excitons arising.     

Luminescence study of alumina nanopowders prepared by various methods

Mixed nanopowders of transition alumina prepared by combustion synthesis and phase pure ultra-porous α-alumina by oxidation method were investigated using low temperature time-resolved cathodoluminescence and photoluminescence spectroscopy under VUV-XUV excitation. In all samples along with the 7.6 eV emission of self-trapped excitons of α-alumina, luminescence bands due to F, F⁺ centres with maxima at 3 and 3.8 eV and other UV–visible luminescence bands of intrinsic and extrinsic origin with varying intensity depending on sample preparation method and thermal treatment were studied. In alumina nanopowders the excitonic excitation peak at ∼9.1 eV near fundamental absorption edge is shifted to the higher energies by 0.15 eV in comparison with the same feature in single crystals. The nanostructure of alumina is responsible for this shift.     

Effects of ion beam irradiation on self-trapped defects in single-crystal Lu2SiO5

Ion irradiation effects on emission bands related to self-trapped defects in Czochralski-grown Lu₂SiO₅ (LSO) crystals has been investigated. Irradiation was carried out using 53 keV He⁺ and 40 keV H⁺ beams with doses of 1 and 2×10¹⁶ atoms/cm², respectively, at room temperature. Post-irradiation radioluminescence measurements were carried out in the 5-300 K temperature range using Mo-target X-ray excitation. Two emission bands were observed at 256 and 315 nm and assigned to self-trapped excitons (STE) and self-trapped holes (STH), respectively. The intensity of the bands was determined by the ballistic damage induced by irradiation, and no effects due to the chemical nature of implanted species were observed. Thermal-quenching activation energies of these defects as a function of irradiation conditions were extracted by applying the Mott-Seitz two-level model. Each band presents strikingly different behavior following irradiation; activation energy of the STH increases two-fold whereas the STE decreases three-fold. The results indicate a major role of surface effects on the radioluminescence of LSO. For comparative purposes, irradiated Lu₂O₃ was also investigated.     

Identification of excitons,trions and biexcitons in single‐layer WS2

Single‐layer WS₂ is a direct‐gap semiconductor showing strong excitonic photoluminescence features in the visible spectral range. Here, we present temperature‐dependent photoluminescence measurements on mechanically exfoliated single‐layer WS₂, revealing the existence of neutral and charged excitons at low temperatures as well as at room temperature. By applying a gate voltage, we can electrically control the ratio of excitons and trions and assert a residual n‐type doping of our samples. At high excitation densities and low temperatures, an additional peak at energies below the trion dominates the photoluminescence, which we identify as biexciton emission. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Low-temperature photoluminescence in AgGaSe<Subscript>2</Subscript> single crystals

Photoluminescence spectra from a single-crystalline AgGaSe₂ ternary compound grown by the Bridgman-Stockbarger method from a nonstoichiometric melt are studied in the temperature interval 8–300 K under various excitation levels. The spectra contain emission bands associated with donor-acceptor recombination, as well as with bound and free excitons. The exciton binding energy and the energy gap of the AgGaSe₂ crystals are evaluated. The temperature dependence of the energies of bound and free excitons, as well as of the energy gap of the crystals, is constructed.     

纳米ZnO薄膜的激子光致发光特性

报道了纳米ZnO薄膜激子光致发光(PL)与温度的关系。首先利用低压金属有机化学气相沉积(LPMOCVD)技术生长ZnS薄膜,然后将ZnS薄膜在氧气中于800℃下热氧化2h获得纳米ZnO薄膜。X射线衍射(XRD)结果表明,纳米ZnO薄膜具有六角纤锌矿多晶结构且具有择优(002)取向。室温下观察到一束强的紫外(326eV)光致发光(PL)和很弱的深能级(DL)发射。根据激子峰的半高宽(FWHM)与温度的关系,确定了激子纵向光学声子(LO)的耦合强度(ГLO)。     

Electronic excitations and luminescence in CsLiB6O10 crystals

The paper presents the results of a complex investigation into the dynamics of electronic excitations in the CsLiB₆O₁₀ crystal (CLBO) by low-temperature luminescence VUV spectroscopy with subnanosecond time resolution under photoexcitation by synchrotron radiation. Strong broad-band low-temperature photoluminescence (PL) of the CLBO crystal has been revealed. Data on the PL decay kinetics, time-resolved PL and PL excitation spectra, and reflectance spectra at 9.3 and 295 K are obtained. It is shown that the intrinsic PL of CsLiB₆O₁₀ in the 3.5-eV range is caused by radiative annihilation of self-trapped excitons. The channels of creation and decay of relaxed and unrelaxed excitons in cesium lithium borate are discussed. The band gap of CLBO is estimated as E _g≈8.5 eV. A monotonic increase in the excitation efficiency of intrinsic CLBO luminescence at exciting photon energies above 19 eV is identified as the photon multiplication process.     

纳米ZnO薄膜可见发射机制研究

利用溶胶－凝胶法 （Sol-Gel）制备了纳米ZnO薄膜,获得了高强的近紫外发射室温下测量了样品的光致发光谱(PL )、吸收谱(ABS)、X射线衍射谱(XRD).X射线衍射(XRD)的结果表明：纳米ZnO薄膜呈多晶态,具有六角纤锌矿结构和良好的C轴取向;发现随退火温度升高,（002）衍射峰强度显著增强,衍射峰的半高宽（FWHM）减小、纳米颗粒的粒径增大.由吸收谱(ABS)给出了样品室温下带隙宽度为3.30 eV.在PL谱中观察到二个荧光发射带,一个是中心波长位于392 nm附近强而尖的紫带,另一个是519 nm附近弱而宽的绿带研究了不同退火温度样品的光致发光峰值强度的变化关系,发现随退火温度升高,紫带峰值强度增强、绿带峰值强度减弱,均近似呈线性变化.证实了纳米ZnO薄膜绿光发射主要来自氧空位(Vo)形成的浅施主能级与锌空位(VZn)形成的浅受主能级之间的复合,或氧空位(Vo)形成的深施主能级上的电子至价带顶的跃迁;紫带来自于导带中的电子与价带中的空位形成的激子复合.     

High-pressure spectroscopic studies of free and self-trapped excitons in alkali halides at low temperatures

Abstract

A brief survey of our studies of free and self-trapped excitons (FE and STE) in alkali halide crystals under hydrostatic pressure up to 12.5 kbar at 4.2–140 K is presented. Main attention is paid to the following effects observed: (1) the strong coupling of three energy levels of FE in CsI revealing itself as an exciton analog of pressure-scanned Fermi resonance; (2) emergence of a new emission band of STE in CsI under pressure; (3) a large pressure shift of the thermal quenching curve for STE emission in NaCl.     

Cu掺杂无水芒硝的光致发光特性

在气温1 100℃下,将纯天然无水芒硝(Na2SO4)和Cu的混合粉末加热20 min,制备了Na2SO4:Cu发光材料.在室温中测量了光致发光谱.通过实验结果发现发射光谱形状依赖于激发波长,在260nm激发下的发射光谱是由峰值位于430 nm处的宽带谱构成,所得到的宽带谱归属于Cu+内电子的3d94s→3d10跃迁....     

纳米ZnO薄膜的光致发光性质

利用溶胶－凝胶法制备了纳米ZnO薄膜,室温下测量了样品的光致发光谱(PL)、吸收谱(ABS)、X射线衍射谱(XRD)．X射线衍射(XRD)的结果表明：纳米ZnO薄膜呈多晶状态,具有六角纤锌矿晶体结构和良好的C轴取向．观察到二个荧光发射带,中心波长分别位于395 nm的紫带、524 nm的绿带和450 nm附近的蓝带．证实了纳米ZnO薄膜绿光可见发射带来自氧空位(VO)形成的浅施主能级和锌空位(VZn)形成的浅受主能级之间的复合;450 nm附近的蓝带来自电子从VO的浅施主能级到价带顶或锌填隙(Zni) 到价带顶或导带底到VZn的浅受主能级的复合．     

X射线辐照后BaFC1中缺陷性质的研究

未掺Eu2+的BaFCl粉末样品在80K下经X射线辐照后,在不同的温度条件下(从80K副273K),用580nm的光波激励样品时观测到310nm和380nm的发光峰.经分析认为,样品经X射线辐照后,在晶体中形成两种卤素离子的F-H''心对.当用F心吸收带的光波激励样品时,两种F—H心对衰变成相应的自陷激子态并复合发光.310nm和380nm分别对应于F-离子和Cl-离子的自陷激子的发光,并且它们的发光强度强烈地依赖于温度的变化。     

Self-trapping of hot and thermalized excitons in solid xenon

The first direct measurement of the self-trapping rate, Γ_ST, of thermalized excitons in solid Xe is presented. The temperature dependence of Γ_ST is explained by thermal assisted tunneling through the self-trapping barrier separating free and self-trapped exciton states. The results agree with recent theories on self-trapping. The ratio of luminescence intensity of free and self-trapped states disagrees with the measured self-trapping rates and displays the role of self-trapping of hot excitons.     

Low-temperature luminescence and thermally stimulated luminescence of BeO: Mg single crystals

Luminescence and thermally stimulated luminescence (TL) of BeO: Mg crystals are studied at T = 6–380 K. The TL glow curves and the spectra of luminescence (1.2–6.5 eV), luminescence excitation, and reflection (3.7–20 eV) are obtained. It is found that the introduction of an isovalent magnesium impurity into BeO leads to the appearance of three new broad luminescence bands at 6.2–6.3, 4.3–4.4, and 1.9–2.6 eV. The first two are attributed to the radiative annihilation of a relaxed near-impurity (Mg) exciton, the excited state of which is formed as a result of energy transfer by free excitons. The impurity VUV and UV bands are compared with those for the intrinsic luminescence of BeO caused by the radiative annihilation of self-trapped excitons (STE) of two kinds: the band at 6.2–6.3 eV of BeO: Mg is compared with the band at 6.7 eV (STE₁) of BeO, and the band at 4.3–4.4 eV is compared with the band at 4.9 eV (STE²) of BeO. In the visible region, the luminescence spectrum is due to a superposition of intracenter transitions in an impurity complex including a magnesium ion. The manifestation of X-ray-induced luminescence bands at T = 6 K in BeO: Mg indicates their excitation during band-to-band transitions and in recombination processes. The energy characteristics of the impurity states in BeO: Mg are determined; the effect of the isovalent impurity on the fluctuation rearrangement of the BeO: Mg structure in the thermal transformation region of STE₁ → STE₂ is revealed.     

Oxygen-related band gap state in single crystal rubrene

A molecular exciton signature is established and investigated under different ambient conditions in rubrene single crystals. An oxygen-related band gap state is found to form in the ambient atmosphere. This state acts as an acceptor center and assists in the fast dissociation of excitons, resulting in a higher dark and photoconductivity of oxidized rubrene. The band gap state produces a well-defined photoluminescence band at an energy 0.25 eV below the energy of the 0-0 molecular exciton transition. Two-photon excitation spectroscopy shows that the states are concentrated near the surface of naturally oxidized rubrene.     

纳米结构ZnO晶体薄膜室温紫外激光发射

文章综述了纳米结构的氧化锌半导体薄膜在室温下自由激子的自发辐射以及由自由激子引起的受激发射的特性，阐述了在不同激发密度下室温紫外受激发射的机理．纳米结构氧化锌半导体薄膜是用激光分子束外延(L-MBE)技术生长在蓝宝石衬底上的．薄膜由密集而规则排列的纳米尺度的六角柱组成．这些纳米六角柱起着限制激子运动的作用，激子的量子尺寸效应，使激子的跃迁振子强度大幅度增强．同时六角柱之间的晶面组成了一个天然的激光谐振腔．室温下用三倍频的YAG脉冲激光激发，可从这些纳米结构的氧化锌薄膜中观测到很强的紫外激光发射．研究发现，在中等激发密度下，紫外受激发射是由于激子与激子间碰撞而引起的辐射复合．在高密度激发条件下，由于激子趋于离化，紫外受激发射主要由电子-空穴等离子体的辐射复合引起．由于纳米结构中激子的跃迁振子增强效应，在室温下测量到的光学增益高达320cm^-1，这比在同样条件下测量到的块状氧化锌晶体的光学增益要高一个量级以上．与传统的电子-空穴等离子体激光辐射相比，激子引起的受激发射可在较低的激发密度条件下实现．这在实际应用上很有价值．     

VUV/UV/X-Ray Excited Luminescent Properties of Eu^3＋ and Pr^3＋ Doped BiSbO4

Absorption spectra of BiSbO4 are studied. The electronic structure calculated by the DFT shows that BiSbO4 is a semiconductor, with direct band gap 2.96 eV, which is consistent with UV-visible diffuse reflectance experiment. The host lattice emission band is located at 440 nm under VUV excitation. Eu^3＋ and Pr^3＋ doped samples have high luminescence efficiency in emitting red and green light, respectively. From the partial density of states, Eu^3＋ doped emitting spectrum, and the host crystal structure parameters, the relationship between structure and optical properties is discussed. It is found that the Eu^3＋ ions occupied Bi^3＋ sites, and there could be an energy transfer from Bi^3＋ ions to RE^3＋ ions.     

Luminescence spectroscopy of excitons and antisite defects in Lu3Al5O12 single crystals and single-crystal films

The nature of the intrinsic luminescence of the lutetium aluminum garnet Lu₃Al₅O₁₂ (LuAG) has been analyzed on the basis of time-resolved spectral kinetic investigations upon excitation of two model objects, LuAG single crystals and single-crystal films, by pulsed X-ray and synchrotron radiations. Due to the differences in the mechanisms and methods of crystallization, these objects are characterized by significantly different concentrations of Lu_Al antisite defects. The energy structure of luminescence centers in LuAG single crystals (self-trapped excitons (STEs), excitons localized near antisite defects, and Lu_Al antisite defects) has been established. For single-crystal LuAG films, grown by liquid-phase epitaxy from a Pb-containing flux, the energy parameters of the following luminescence centers have been determined: STEs in regular (unperturbed by the presence of antisite defects) sites of the garnet lattice and excitons localized near Pb²⁺ ions. The structure of the luminescence centers, related to the background emission of impurity Pb²⁺ ions, has also been established in the UV and visible ranges. It is suggested that, in contrast to the two-halide hole self-trapping, a self-trapped state similar to STEs in simple oxides (Al₂O₃, Y₂O₃) is formed in LuAG; this state is formed by self-trapped holes in the form of singly charged O^? ions and electrons localized at excited levels of Lu³⁺ cations.     

SPECTROSCOPIC INVESTIGATIONS AND IDENTIFICATION OF THE OCCURRENCE OF MULTIPHOTON ABSORPTION PROCESSES IN CADMIUM IODIDE

Spectroscopic investigations for cadmium iodide (CdI₂) crystal have been carried out at 80 K under laser excitation. Due to the self-trapped excitons of CdI₂, a broad-band stimulated emission spectrum with its peak emission around 520 nm was achieved from the crystal under two-photon pumping by means of ruby laser. The photoluminescence (PL) studies in the crystal show overall nonlinear dependence of the PL peak intensity on input laser energy. The occurrence of slopes about 2 and 3 obtained in the desired energy range of interest for ruby and neodymium laser excitations, respectively, indicate corresponding photon absorption process. The photon absorption coefficients for the processes were calculated.