Bi掺杂锐钛矿相TiO2第一性原理计算

采用密度泛函理论(DFT)下的第一性原理平面波超软赝势方法计算了Bi掺杂前后锐钛矿相TiO2的电子结构和光学性质。结果分析发现:掺杂后Ti的电荷布居数下降,O的布居数增加;同时在TiO2禁带中引入了杂质能级,禁带宽度略微变大,但是杂质能级的作用抵消了禁带宽度变大带来的不利影响,使得掺杂后TiO2吸收带边红移并在可见光范围内吸收明显增强。     

Electronic band structure and optical properties of titanium oxyphosphates Li0.50Co0.25TiO(PO4) single crystals: An ab-initio calculations

From the refined atomic positions obtained by Belmal et al. (2004) [1] using X-ray diffraction for Li_0.50Co_0.25TiO(PO₄), we have performed a structural optimization by minimizing the forces acting on the atoms keeping the lattice parameters fixed at the experimental values. With this relaxed (optimized) geometry we have performed a comprehensive theoretical study of electronic properties and dispersion of the linear optical susceptibilities using the full potential linear augmented plane wave (FP-LAPW) method. The generalized gradient approximation (GGA) exchange-correlation potential was applied. In addition, the Engel-Vosko generalized gradient approximation (EVGGA) was used for comparison with GGA because it is known that EVGGA approach yields better band splitting compared to the GGA. We have calculated the band structure, and the total and partial densities of states. The electron charge densities and the bonding properties were analyzed and discussed. The complex dielectric optical susceptibilities were discussed in detail.     

锂离子电池LiTi0.25Fe0.75SO4F正极材料的电子结构

采用密度泛函理论平面波赝势的方法,计算了LiFeSO₄F和LiTi_0.25Fe_0.75SO₄F正极材料的电子结构。计算结果表明：当锂嵌入材料后,S、O和F的原子布居变化较小,电子主要填充在过渡金属的3d轨道,导致过渡金属被还原,成为电化学反应的活性中心。在嵌锂态中,锂和氧（氟）之间形成了离子键,而过渡金属（Ti和Fe）与氧（氟）之间则形成了共价键,S-O键的共价性最强。态密度的计算结果则表明：Ti和Fe均保持高自旋排列结构;LiFeSO₄F的两个自旋通道的带隙分别为2.88和2.29 eV,其导电性很差;Ti掺杂使体系的带隙消失,显著地提高了正极材料的导电性;LiTi_0.25Fe_0.75SO₄F系统中Ti-O和Ti-F键均比纯相中的Fe-O和Fe-F键的共价性更强,因此Ti掺杂材料具有更好的结构稳定性。     

锂离子电池LiTi_(0.25)Fe_(0.75)SO_4F正极材料的电子结构

采用密度泛函理论平面波赝势的方法,计算了LiFeSO_4F和LiTi_(0.25)Fe_(0.75)SO_4F正极材料的电子结构。计算结果表明:当锂嵌入材料后,S、O和F的原子布居变化较小,电子主要填充在过渡金属的3d轨道,导致过渡金属被还原,成为电化学反应的活性中心。在嵌锂态中,锂和氧(氟)之间形成了离子键,而过渡金属(Ti和Fe)与氧(氟)之间则形成了共价键,S-O键的共价性最强。态密度的计算结果则表明:Ti和Fe均保持高自旋排列结构;LiFeSO_4F的两个自旋通道的带隙分别为2.88和2.29 e V,其导电性很差;Ti掺杂使体系的带隙消失,显著地提高了正极材料的导电性;LiTi_(0.25)Fe_(0.75)SO_4F系统中Ti-O和Ti-F键均比纯相中的Fe-O和Fe-F键的共价性更强,因此Ti掺杂材料具有更好的结构稳定性。     

Magneto‐Optical Studies of HgTe/HgxCd1−xTe(S) Core–Shell Nanocrystals

The synthesis and magneto‐optical properties of HgTe nanocrystals capped with Hg_xCd_1?xTe(S) alloyed shells have been investigated. The magneto‐optical measurements included the use of optically detected magnetic resonance (ODMR) and circular polarized photoluminescence (CP‐PL) spectroscopy. The PL spectra suggest the existence of luminescence events from both the core HgTe and the Hg_xCd_1?xTe(S) shells. The continuous‐wave (cw) and time‐resolved ODMR measurements revealed that the luminescence at the shell regime is associated with a trap‐to‐band recombination emission. The electron trap is comprised of a Cd–Hg mixed site, confirming the existence of an alloyed Hg_xCd_1?xTe(S) composition. The ODMR data and the CP‐PL measurements together revealed the g‐values of the trapped electron and the valence band hole.     

Cr、Sn、Co掺杂对层状二维材料MoSi2N4的电子和光学性能的影响(英文)

基于新合成的二维材料MoSi₂N₄(MSN),我们建立了一系列MSN的掺杂模型进行了第一原理计算。首先,我们计算了本征MSN的电子特性,包括其能带结构和态密度。然后我们研究了Cr、Sn和Co掺杂对MSN的电子和光学性质的影响。结果表明,在3种掺杂体系中,Co掺杂体系表现出最低的形成能,这表明Co掺杂体系是最稳定的。通过带隙计算表明,尽管3种掺杂模型都降低了MSN的固有带隙,但却表现出3种不同的电子特性。态密度图也显示,Cr和Co掺杂体系都在导带底(CBM)和价带顶(VBM)附近产生局部尖峰。此外,光学性质的计算中表明,掺杂后体系的光学性质也得到了改善。     

Preparation and Characterization of Bismuth Doped TiO2 Thin Films

A series of Bismuth-doped titanium oxide (Bi-doped TiO₂) thin films on glass substrates have been prepared by sol-gel dip coating process. The prepared catalysts were characterized by XRD and XPS. The photocatlytic activity of the thin film catalysts was evaluated through the photodegradation of aqueous methyl orange under UV illumination. The experiments demonstrated that the Bi-doped TiO₂ prepared was anatase phase. The doped bismuth was in the 3⁺ oxidation state. The presence of Bi significantly enhanced the photocatalytic activity of TiO₂ films. At calcination temperature of 500°C, with doping concentration of 2 wt %, Bi-doped TiO₂ thin film showed the highest photocatalyic activity.     

GGA and GGA + U Study of ThMn2Si2 and ThMn2Ge2 Compounds in a Body-Centered Tetragonal Ferromagnetic Phase

Our study used the full-potential linearized augmented plane waves (FP-LAPW) method to conduct a first-principles evaluation of the structural, electronic, and magnetic properties of ThMn₂X₂ (X = Si and Ge) compounds. To establish theoretical dependability with the currently available experimental results, computations for the structural findings of ternary intermetallic thorium (Th)-based compounds were achieved using the generalized gradient approximation in the scheme of Perdew–Burke–Ernzerhof (PBE–GGA) potential, while the generalized gradient approximation plus the Hubbard U (GGA + U) approach was employed to improve the electrical and magnetic properties. In contrast with both the paramagnetic (PM) and antiferromagnetic (AFM) phases, the ThMn₂X₂ compounds were optimized in a stable ferromagnetic (FM) phase, which was more suited for studying and analyzing magnetic properties. The electronic band structures (BS) and the density of state (DOS) were computed using the two PBE–GGA and GGA + U approximations. The thorium (Th)-based ThMn₂X₂ compound has full metallic character, due to the crossing and overlapping of bands across the Fermi level of energy, as well as the absence of a gap through both spin (up and down) channels. There was a significant hybridization between (Mn-d and (X = Si and Ge)-p states of conduction band with Th-f states in the valence band. The total magnetic moment of ThMn₂Si₂ in the ferromagnetic phase was 7.94534 μB, while for ThMn₂Ge₂ it was 8.73824 μB with a major contribution from the Mn atom. In addition, the ThMn₂Ge₂ compound’s total magnetic moment confirmed that it exhibits higher ferromagnetism than does the ThMn₂Si₂ compound.     

Relationship between oxygen content and superconductivity of Tl0.5Pb0.5Sr2CuOy(y≈5)

The electronic energy band structures of the Tl_0.5Pb_0.5Sr₂Cu0_y (y5) superconductor were calculated and the effect of the oxygen content on its electronic structures was studied in the present paper. The results show that the oxygen content has a great influence on its electronic structures. The moderate oxygen content causes the number of bands near the Fermi surface to increase and results in a sudden change in the densities of states at the Fermi level E _f. The influence of the oxygen content on the electronic structures is mainly due to the peroxide pairs in the unit cell. The lower or higher oxygen content results in the decrease in the number of bands near E _f and the densities of states at E _f, which is of no advantage to superconductivity.     

Electronic structure and photocatalytic properties of ABi2Ta2O9 (A=Ca, Sr, Ba)

A new series of layered perovskite photocatalysts, ABi₂Ta₂O₉ (A=Ca, Sr, Ba), were synthesized by the conventional solid-state reaction method and the crystal structures were characterized by powder X-ray diffraction. The results showed that the structure of ABi₂Ta₂O₉ (A=Ca, Sr) is orthorhombic, while that of BaBi₂Ta₂O₉ is tetragonal. First-principles calculations of the electronic band structures and density of states (DOS) revealed that the conduction bands of these photocatalysts are mainly attributable to the Ta 5d+Bi 6p+O 2p orbitals, while their valence bands are composed of hybridization with O 2p+Ta 5d+Bi 6s orbitals. Photocatalytic activities for water splitting were investigated under UV light irradiation and indicated that these photocatalysts are highly active even without co-catalysts. The formation rate of H₂ evolution from an aqueous methanol solution is about 2.26 mmol h^-1 for the photocatalyst SrBi₂Ta₂O₉, which is much higher than that of CaBi₂Ta₂O₉ and BaBi₂Ta₂O₉. The photocatalytic properties are discussed in close connection with the crystal structure and the electronic structure in details.     

DFT Investigations of Aun Nano-Clusters Supported on TiO2 Nanotubes: Structures and Electronic Properties

TiO₂ nanotubes (TiO₂NTs) are beneficial for photogenerated electron separation in photocatalysis. In order to improve the utilization rate of TiO₂NTs in the visible light region, an effective method is to use Au_n cluster deposition-modified TiO₂NTs. It is of great significance to investigate the mechanism of Au_n clusters supported on TiO₂NTs to strengthen its visible-light response. In this work, the structures, electronic properties, Mulliken atomic charge, density of states, band structure, and deformation density of Au_n (n = 1, 8, 13) clusters supported on TiO₂NTs were investigated by DMOL3. Based on published research results, the most stable adsorption configurations of Au_n (n = 1, 8, 13) clusters supported with TiO₂NTs were obtained. The adsorption energy increased as the number of Au adatoms increased linearly. The Au_n clusters supported on TiO₂NTs carry a negative charge. The band gaps of the three most stable structures of each adsorption system decreased compared to TiO₂NTs; the valence top and the conduction bottom of the Fermi level come mainly from the contribution of 5d and 6s-Au. The electronic properties of the 5d and 6s impurity orbitals cause valence widening and band gap narrowing.     

CdTe and anodic oxides on Hg1−xCdxTe: interface and compositional analysis using Rutherford backscattering spectroscopy

The composition and interfacial region has been studied for CdTe and anodic oxides deposited/grown on Hg_1?xCd_xTe using Rutherford backscattering spectroscopy. The interfacial region for the CdTe/Hg_1?xCd_xTe sample was found to be ～35 nm, in which out‐diffusion of Hg was observed. The interfacial region in the case of anodic oxides/Hg_1?xCd_xTe was found to be very small, <10 nm (of the order of experimental resolution), in which the Hg concentration increases steeply and the oxygen concentration decreases. Passivant and bulk compositions also have been obtained in both cases. Copyright © 2005 John Wiley & Sons, Ltd.     

Preparation of La0.75Sr0.25MnO3 Nano-Phase Powders and Films from Alkoxide Precursors

The first purely alkoxide-based sol-gel route to nano-phase powders and thin films of perovskite La_0.75Sr_0.25MnO₃ is described. The phase and microstructure evolution on heat treatment of free gel films to form the target nano-phase oxide were investigated by TGA, IR spectroscopy, powder XRD, SEM and TEM-EDS. The xerogel consisted of a hydrated oxo-carbonate, without remaining alkoxo groups or solvent. Heating at 5°C·min^–1 decomposed the carbonate groups and yielded the pure perovskite La_0.75Sr_0.25MnO₃ at 760°C. The cell dimensions were virtually unchanged from the first observation of perovskite at 680°C, to 1000°C, 4 h. The monoclinic cell of La_0.75Sr_0.25MnO₃ obtained at 1000°C, 4 h, had the dimensions a = 5.475(1), b = 5.504(2), c = 7.771(1) Å, = 90.50(2), fitting the literature data quite well. Crack-free, homogenous, 150 nm thick La_0.75Sr_0.25MnO₃ films were prepared by spin-coating Si/SiO₂/TiO₂/Pt and polycrystalline -Al₂O₃ substrates with a 0.6 M alkoxide solution, followed by heating at 5°C·min^–1 to 800°C, 30 min.     

The Temperature‐Composition Phase Equilibria in the Hg0.8Cd0.2Te‐HgI2 Pseudobinary System

The temperature‐composition phase equilibria of the Hg_0.8Cd_0.2Te‐HgI₂ system were investigated between about 100 and 800 °C using Debye‐Scherrer powder X‐ray diffraction techniques, differential thermal analysis, differential scanning calorimetry, and thermochemical and structural calculations. This system is a pseudobinary temperature‐ composition plane in the HgTe‐CdTe‐HgI₂ pseudoternary phase diagram. Measurable solid solutions of HgI₂ in Hg_0.8Cd_0.2Te with the cubic zinc blende‐type structure exist between about 290 and 700 °C, with a maximum solubility of 4.9 ± 0.3 mole‐% HgI₂ at 363 ± 3 °C. Further addition of HgI₂ to HgI₂‐saturated Hg_0.8Cd_0.2Te yields the formation of CdI₂, which reduces the mole fraction (x) of CdTe in the Hg_1—xCd_xTe host lattice. After sufficient HgI₂ is added, the host lattice is depleted in CdTe and forms Hg₃Te₂I₂ in addition to CdI₂. Phase fields containing the ternary compound Hg₃TeI₄, which we first observed in the HgTe‐HgI₂ system, also exist in the present system. Quaternary analogs of the known ternary compounds Hg₃Te₂I₂ and Hg₃TeI₄, i.e., Hg_3—yCd_yTe₂I₂ and Hg_3—yCd_yTeI₄, were not observed under present experimental conditions.     

The mercury chromates Hg6Cr2O9 and Hg6Cr2O10—Preparation and crystal structures, and thermal behaviour of Hg6Cr2O9

The basic mercury(I) chromate(VI), Hg₆Cr₂O₉ (=2Hg₂CrO₄·Hg₂O), has been obtained under hydrothermal conditions (200 °C, 5 days) in the form of orange needles as a by-product from reacting elemental mercury and K₂Cr₂O₇. Hydrothermal treatment of microcrystalline Hg₆Cr₂O₉ in demineralised water at 200 °C for 3 days led to crystal growth of red crystals of the basic mercury(I, II) chromate(VI), Hg₆Cr₂O₁₀ (=2Hg₂CrO₄·2HgO). The crystal structures were solved and refined from single crystal X-ray data sets. Hg₆Cr₂O₉: space group P2₁2₁2₁, Z=4, a=7.3573(12), b=8.0336(13), , 3492 structure factors, 109 parameters, R[F²>2σ(F²)]=0.0371, wR(F² all)=0.0517; Hg₆Cr₂O₁₀: space group Pca2₁, Z=4, a=11.4745(15), b=9.4359(12), , 3249 structure factors, 114 parameters, R[F²>2σ(F²)]=0.0398, wR(F² all)=0.0625. Both crystal structures are made up of an intricate mercury-oxygen network, subdivided into single building blocks [O-Hg-Hg-O] for the mercurous compound, and [O-Hg-Hg-O] and [O-Hg-O] for the mixed-valent compound. Hg₆Cr₂O₉ contains three different Hg₂²⁺ dumbbells, whereas Hg₆Cr₂O₁₀ contains two different Hg₂²⁺ dumbbells and two Hg²⁺ cations. The Hg^I-Hg^I distances are characteristic and range between 2.5031(15) and 2.5286(9) Å. All Hg₂²⁺ groups exhibit an unsymmetrical oxygen environment. The oxygen coordination of the Hg²⁺ cations is nearly linear with two tightly bonded O atoms at distances around 2.07 Å. For both structures, the chromate(VI) anions reside in the vacancies of the Hg-O network and deviate only slightly from the ideal tetrahedral geometry with average Cr-O distances of ca. 1.66 Å. Upon heating at temperatures above 385 °C, Hg₆Cr₂O₉ decomposes in a four-step mechanism with Cr₂O₃ as the end-product at temperatures above 620 °C.     

Influence of partial substitution of zinc for copper on electronic structures of YBa2Cu3O y

Summary By use of an approximate band-structure treatment based on the EHMO approach, the energy band structures for the Zn-doped superconductor YBa₂Cu_3–x Zn _x O _y were calculated in the present paper and the influence of partial substitution of zinc for copper on the electronic structures for orthorhombic YBa₂Cu₃O_y was studied. From analysis of the band structures and the densities of states for YBa₂Cu_3–x Zn _x O _y , it was demonstrated that the 2D Cu-O planes in the Y-Ba-Cu-O superconducting system have a direct and dominant influence on superconductivity, whereas the role of the 1D Cu-O ribbons and the O(4) atoms is also of some importance.     

Electronic structures of superconductors YBa2Cu3−x M x O y (M=Sn,Ni)

Based on the EHMO approach, the energy band structures for superconductors YBa₂Cu_3–x Sn _x O _y (y>7) and YBa₂Cu_3–x Ni _x O_y (y<7) were calulated in the present paper. The influence of the cation doping at the Cu site in the unit cell and the oxygen content on their electronic structures was studied. The results showed that the cation doping at the Cu site resulted in the great decreases in the bandwidths of the broad anisotropic Cu-O bands and the densities of states. In YBa₂Cu_3–x Sn _x O _y , however, these decreases are compensated by the increase in the oxygen content caused by the Sn-doping, which results in a small change in the total densities of states. For YBa₂Cu_3–x Ni _x O _y , the effect of the doping on its electronic structures in dominant. The Ni-doping, therefore, results in a great change in the electronic structures. In addition, the study on the projected densities of states of the Ni-doped system revealed that the 2D Cu-O planes in the Y-Ba-Cu-O system played a dominant role in superconductivity.     

Chemical etching of CdxHg1-x Te single crystals in bromine-releasing aqueous H2O2-HBr-solvent solutions

The nature and mechanism of dissolution of single crystals of a Cd_0.21Hg_0.79Te solid solution in H₂O₂-HBr-solvent bromine-releasing aqueous solutions were determined, with water, ethylene glycol, and tartaric, citric, and lactic acids used as solvents. Projections of the surfaces of equal etching rates were constructed and the concentration limits were found for solutions that can be used for chemical-dynamical polishing of the surface of Cd_0.21Hg_0.79Te single crystals.     

Synthesis and Growth of Flower-Like Zn-Doped CdSe Microstructures

Hexagonal phase flower-like Zn-doped CdSe (Cd_1-xZn_xSe, x = 0.3) semiconductor microstructures from the solid air-stable precursor have been achieved in the mixed solution of ethylenediamine (en) and ethylene glycol (EG) at 180°C for 12 hours. Characterized by powder x-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy dispersive spectrum (EDS), and UV-vis absorption spectroscopy, it can be seen that the as-synthesized Cd_0.7Zn_0.3Se is hexagonal phase, and each flower-like Cd_0.7Zn_0.3Se microstructure is made up of many Cd_0.7Zn_0.3Se nanoflakes. From the UV-vis absorption spectrum of the product, it was observed that the optical band gap energies of flower-like Cd_0.7Zn_0.3Se microstructures shift toward shorter wavelengths compared with CdSe.     

Determination of the stoichiometry of semiconductor systems of the type CdvHg1?vSe and CdxHg1?xTe by X-ray fluorescence spectrometry

Summary Semiconductors of the composition Cd _v Hg_1–v Se and Cd _x Hg_1–x Te are gaining growing industrial interest. The energy gap between the bands of such systems depends significantly on the magnitude of the mole fractions v and x. X-ray fluorescence analysis of acid solutions of these crystals is a simple and precise procedure to determine the stoichiometry. Sample preparation, calibration series and results are discussed.

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Bestimmung der Stöchiometrie von Halbleitersystemen des Typs Cd_vHg_1–vSe und Cd_xHg_1–xTe, durch Röntgenfluorescenz-Spektrometrie

Zusammenfassung Halbleiter der Typen Cd _v Hg_1–v Se und Cd _x Hg_1–x Te gewinnen zunehmend industrielles Interesse. Der Energieabstand der Bänder in solchen Systemen hängt entscheidend von der Größe der Molenbrüche v und x ab. Ein einfaches und sicheres Analysenverfahren zur Ermittlung der Stöchiometrie ist die Röntgenfluorescenzanalyse von sauren Lösungen dieser Kristalle. Die Probenvorbereitung, Eichreihen und Resultate werden diskutiert.

Delegated to Central Institute of Analytical Chemistry, Nuclear Research Establishment (KFA), Jülich, FRG.