具有不同颗粒尺寸的La2/3Ca1/3MnO3多晶样品阻温关系的Monte Carlo模拟

用溶胶-凝胶法制备了具有不同颗粒尺寸的La2/3Ca1/3MnO3多晶样品,并测量了该系列样品的电阻随温度的变化关系.借助Monte Carlo方法随机生成的无规电阻网络模型,对具有不同颗粒尺寸的La2/3Ca1/3MnO3多晶样品的电阻温度关系进行了模拟,模拟的结果同实验有非常好的一致性,在此基础上就颗粒边界效应对其电输运性质的影响进行了讨论.     

非化学配比锰基钙钛矿输运特性研究

本文报道了用溶胶凝胶法并经过低温(900℃)后处理制备的具有非化学配比的La2/3Ca1/3Mn1-xO3(x=0～0.10)多晶样品的电输运和磁性质的实验研究.结果表明,随x的增加,样品呈现出明显增强的非本征磁电阻效应,同时其本征磁电阻效应减弱.实验还观察到样品的颗粒尺寸随x的增加而减小的现象.基于样品的结构特征,本文讨论了其独特输运性能的形成原因.     

钙钛矿La0.75Ca0.25-xSrxMnO3的磁卡效应与复合材料

采用固相反应烧结法制成了钙钛矿La_0.75Ca_0.25-xSr_xMnO₃多晶样品.研究了样品的微观结构、样品的磁熵变和居里温度与成分的变化关系.并通过复合得到一种可适用于Ericsson循环的制冷材料. 关键词：     

相分离体系Nd1-xSrxCoO3的亚铁磁行为

研究了Nd1-xSrxCoO3(0.1≤x≤0.5)系列多晶样品在低温时的亚铁磁行为.通过传统的固相反应法合成了Nd1-xSrxCoO3多晶样品,应用物理性质测试系统对样品进行了直流磁化强度、磁滞回线的测试.磁化强度的研究表明,随掺杂量增加,团簇的数目和尺寸都在增加,铁磁性增强.同时,多晶样品在低温时形成亚铁磁序.磁滞回线的研究表明,Nd离子与Co离子之间存在磁性耦合.由于Co与Nd的反平行排列,Nd1-xSrxCoO3体系低温时出现亚铁磁序.     

Ca2+掺杂对CdO多晶热电性能的影响

以CaCO₃作为Ca²⁺源, 利用传统固相烧结法制备了Cd_1-xCa_xO (x=0, 0.01, 0.03, 0.05) 多晶块体样品并研究了Ca²⁺掺杂对CdO高温热电性能的影响. CaCO₃的掺入会导致CdO多晶载流子浓度降低, 使Cd_1-xCa_xO的电阻率ρ和塞贝克系数的绝对值|S|增大、电子热导率κ_e减小. 同时, 在CdO中掺入CaCO₃会引入点缺陷和气孔并可抑制CdO晶粒长大、晶界增多, 从而增加了对声子的散射, 使样品的声子热导率κ_p减小. 由于总热导率的大幅降低, Cd_0.99Ca_0.01O多晶样品在1000 K时的热电优值ZT可达0.42, 比本征CdO提高了约27%, 为迄今n型氧化物热电材料报道的最好结果之一.     

晶粒尺寸对Pr0.5(Ca0.47Ba0.03)MnO3中台阶效应的影响

采用溶胶-凝胶法制备了不同颗粒尺寸的Pr0.5(Ca0.47Ba0.03)MnO3多晶样品.对样品进行电阻测量发现,随颗粒边界的减小,其电阻率随磁场的变化即ρ(H)曲线上台阶数目和位置发生变化;实验同时发现,热循环对样品低温下的基态也有很大的影响.实验结果表明,颗粒尺寸大小,可以有效地调节反铁磁相(AFM)和铁磁相(FM)之间的相互作用,从而对台阶效应产生影响.进一步证明了台阶效应与相应力有关.     

掺Ba对Bi系2212相超导电性的影响

研究了掺Ｂａ对Bi₂Sr_2-xBa_xCaCu₂O_y（０≤ｘ≤０．１５，０．３）单晶和多晶样品超导电性的影响，结果表明，有少量Ｂａ^２＋离子进入了超导相，且有固溶度极限．对于２２１２相单晶，ｃ轴参数和Ｔ_c均随Ｂａ含量增加而增加；对于慢冷多晶样品，掺Ｂａ可明显提高Ｔ_c；然而对于淬大多晶样品，Ｔ_c没有明显变化，用掺Ｂａ 关键词：     

不同醇水比对β-NaYF4：Yb3+，Er3+晶相的影响

采用水热法制备不同醇水比的NaYF₄：20%Yb³⁺,2%Er³⁺晶体,通过XRD、FE-SEM、TEM、PL测试手段对合成样品进行表征和分析。样品的FE-SEM图结果表明,随着醇水比的增大,颗粒尺寸越来越小,最小可达纳米级。通过XRD测试表明,醇水比对样品的晶相亦有影响,当醇水比为30/10 mL时,产物中开始出现α-NaYF₄晶相。验证了形成机理的正确性并得到一条相转变反应时间与醇水比关系的模拟曲线图。TEM图显示样品属于多晶,且结晶性能良好。在980 nm近红外光激发下,β-NaYF₄：20%Yb³⁺,2%Er³⁺上转换晶体发出绿光和红光。     

Y0.9Pr0.1CrO3的反常磁性

采用固相反应法制备了YCrO3多晶样品,并首次制备了和Y0.9Pr0.1CrO3多晶样品,研究了其磁性质.在场冷模式下,外加磁场为100Oe时,Y0.9Pr0.1CrO3的磁化强度-温度关系曲线显示磁化反转的异常.在尼尔温度以下,随着温度的降低,磁化强度首先增加,在96K达到最大值,约0.230emu/g.之后磁化强度开始降低,在32K变为零值;并且在32K以下,磁化强度出现负值.这种现象解释为Pr离子的顺磁效应.     

A位掺杂对La5/8(PrxCa1-x)3/8MnO3（x=0.25,0.5,0.75）相分离及输运性质的影响

采用固相反应法制备La5/8(PrxCa1-x)3/8MnO3(x=0.25,0.5,0.75)多晶样品,研究其磁性质和电磁输运特性.X射线衍射表明,La5/8(PrxCa1-x)3/8MnO3(x=0.25,0.5,0.75)多晶样品室温的晶体结构呈Pnma空间群的正交结构.磁化强度-电阻(M～T)关系显示,La5/8(PrxCa1-x)3/8MnO3(x=0.25,0.5,0.75)的居里温度TC随Pr掺杂量增加而逐渐降低,三种样品分别为160K、150K、100K.此外,随着Pr3+掺杂量增加,样品晶格畸变程度增大,铁磁相互作用减弱,并且三种成分均形成自旋玻璃态,其自旋冻结温度分别为150K、75K、70K.电阻-温度(ρ～T)关系表明,样品在x=0.25时出现电阻的双峰现象,这是由于样品中铁磁相与反铁磁相相互竞争造成的.结果表明,通过对钙钛矿锰氧化物的A位稀土掺杂,可对其CMR效应进行有效调控.     

粗晶和纳米晶Sm_3Co合金的制备及其性能研究

本文针对Sm3Co粗晶和纳米晶合金材料的制备和基础性能进行了研究.采用磁悬浮熔炼技术多次精炼制备出Sm3Co粗晶合金.以此为母材,利用高能球磨非晶化和放电等离子烧结致密化并同步晶化的技术路线,制备出平均晶粒尺寸为8 nm的超细纳米晶Sm3Co合金块体材料.构建了Sm3Co纳米晶合金的晶体结构模型,并结合其显微组织的表征,分析了Sm3Co纳米晶合金的磁性能和力学性能,并与粗晶合金进行了比较粗晶Sm3Co合金不具有硬磁特性,而同种成分的纳米晶合金则表现出一定的硬磁特性.纳米晶Sm3Co合金的显微硬度和弹性模量分别达到4.87 GPa和63.7 GPa,比粗晶合金增大约8.7%和13.3%.本文研究结果为Sm-Co体系合金的基础性能及其纳米尺度效应提供了系统的参考依据.     

Integrated optical Mach-Zehnder modulator based on polycrystalline BaTiO3

Good-quality polycrystalline BaTiO3 thin films are deposited on MgO substrates by pulsed laserdeposition. The deposition parameters are optimized to achieve optical-quality films with an attenuation coefficient of 4 dB/cm at the 633-nm wavelength. Thin-film electro-optic Mach-Zehnder modulators are fabricated with standard lithography and ion-beam etching. The waveguides patterned by lithography are the ridge type, and they ensure single-mode propagation in the wavelength range of 633-1550 nm. An electro-optic coefficient of 22 pm/V is estimated for the polycrystalline BaTiO3 films.     

In-situ strain effect on extrinsic transport of polycrystalline La0.7(Ca,Sr)0.3MnO3 films

The spin-polarised transport in ferromagnetic polycrystalline La_0.7(Sr,Ca)_0.3MnO₃ films on piezoelectric substrate has been investigated. The systematic study involved in finding the effect of in-situ strain on extrinsic electrical transport of various thick polycrystalline La_0.7(Sr,Ca)_0.3MnO₃ thin films. The in-situ strain in the manganite polycrystalline thin film is achieved by applying an electric field to the piezoelectric substrate 0.72 Pb(Mg_1/3Nb_2/3)O₃-0.28 PbTiO₃ (PMN-PT). A reversible strain of about 0.11% is acquired with an application of 10 kV/cm to the piezoelectric substrate. A typical drop in resistance at low magnetic fields has been found in all the polycrystalline manganite films. The effect of reversible strain versus the resultant strain gauges was discussed in all the polycrystalline films. At low temperatures, the effect of strain on low-field magnetoresistance and high-field magnetoresistance was found to be negligible. Further, the results are compared with the transport in manganite films deposited on step edge junctions.     

Limits of the critical current density of polycrystalline high-temperature superconductors based on the current transport properties of single grain boundaries

A semiquantitative technique for estimating the limits of the critical current density in polycrystalline high-temperature superconductors is presented. This technique is based on the transport properties of single grain boundaries. Various factors essential in deducing the critical current density of polycrystalline high-T _c materials from the characteristics of single grain boundaries are discussed. The results for tectured, polycrystalline YBa₂Cu₃O₇ fibers are reported, and the influence of the microstructure on their critical current density is discussed.     

LuTaO$lt;sub$gt;4$lt;/sub$gt;相变及结构

LuTaO₄是最高密度的闪烁体基质, 研究它的结构及其相变对单晶制备具有指导意义. 用固相法制备了Lu₂O₃和Ta₂O₅摩尔比为1:1时在不同温度下形成的多晶粉末, 用X射线衍射及Rietveld全谱拟合研究了多晶粉末的物相和结构. 结果表明, Lu₂O₃: Ta₂O₅摩尔比为1:1的样品在1740 ℃时合成的物相为M'-LuTaO₄, 在1800 ℃时为M'-LuTaO₄和M-LuTaO₄的混合物, 在1840 ℃时全部转变为M-LuTaO₄. 当温度升高到2058 ℃时, 样品呈熔融状态, 对淬火得到的样品进行结构精修, 给出了M-LuTaO₄, Lu₃TaO₇和Ta₂O₅的晶胞和原子坐标参数, 它们的重量比分别占78.1%, 18.9%和3.0%. 这些结果为制备以LuTaO₄为基质的高密度闪烁体单晶具有参考价值. 关键词： 4')" href="#">LuTaO₄ 相变 粉末衍射 Rietveld精修     

Ferromagnetic resonance study of interface anisotropies in exchange-biased Fe(0 0 1)/KNiF3 bilayers

Magnetic anisotropies at epitaxial Fe/KNiF₃ interfaces were probed by ferromagnetic resonance. Fe(0 0 1) films coupled to single crystal KNiF₃ exhibit four-fold in-plane anisotropy and a unidirectional bias upon field-cooling. In Fe(0 0 1) with polycrystalline KNiF₃, the bias direction deviates from the field-cooling direction. Lattice mismatch strain due to polycrystalline KNiF₃ also induces uniaxial anisotropy in Fe.     

Magnetic properties and domain structure of polycrystalline DyFe3

Magnetization σ vs. temperature T was measured from 80 to 700 K in polycrystalline DyFe₃ in a magnetic field H = 10 kOe. From σ = f(T), the Curie temperature was determined. Also, σ was measured vs. H from 0 to 70 kOe at 4.2 K. Magnetization at saturation σ₀ at 4.2 K and the magnetic moment of DyFe₃ were also determined. First observations of domain structure in DyFe₃ are reported. The mean domain with is determined in its dependence on the grain size . The magnetocrystalline anisotropy constant of polycrystalline DyFe₃ is determined as K₁ = -1.2×10⁷ erg/cm³.     

BF+2注入多晶硅栅F迁移特性的分析与模拟

在深入分析BF⁺₂注入多晶硅栅F在多晶硅栅中迁移特性的基础上，建立了F在多晶硅栅中的迁移方程.采用有限差分法，模拟了BF⁺₂注入多晶硅栅F在多晶硅栅中的分布.模拟结果与二次离子质谱(SIMS)分析结果相符.给出了80keV，2×10¹⁵cm^-2 BF⁺₂注入多晶硅栅900℃，30min退火条件下F在多晶硅中的发射系数e=6×10关键词：     

Arsenic-implanted polysilicon layers

The diffusion behavior of implanted arsenic in polycrystalline silicon was investigated, using backscattering and electrical measurements. The diffusion coefficient isD=8.5×10⁻³ exp (−2.74/kT) for polycrystalline silicon deposited on freshly-etched silicon andD=1.66 exp (−3.22/kT) for the deposition on silicon having natural oxide. At the interface to the single-crystalline silicon, a pile-up of arsenic occurs, which depends also on the surface treatment prior to the deposition of the polycrystalline silicon.