Pressure and disorder effects on the half-metallic character and magnetic properties of the full-Heusler alloy Co2FeSi

We investigate the pressure and site disorder effects on the half-metallicity and magnetic properties of the full-Heusler alloy Co₂FeSi using first-principles density functional theory within the GGA and GGA+U schemes. The calculated lattice constant, bulk modulus and total magnetic moments are in excellent agreement with recent experiments. The volume compression leads to a slight increase of the minority band gap, i.e., the half-metallic properties of Co₂FeSi can maintain under pressure. The disorder calculations reveal that Fe–Co type disorder significantly destroys the half-metallic character and reduces the spin polarization of Co₂FeSi while disorder between Fe and Si can maintain half-metallic properties. Our results also show that the Fe–Co type disorder leads to degradation of the magnetism while the Fe–Si type disorder affects hardly the magnetism as observed in Co₂FeSi.     

First-principle study of full Heusler Co2Y Si using PBE0 hybrid functional

First-principle self-consistent full potential linear augmented plane wave calculations based on density functional theory using hybrid functional PBE0 are performed to study magnetic moments, density of states and half-metallicity of L2₁ type full Heusler alloys with formula Co₂Y Si. Y is Ti, V, Mn and Fe. We have compared these results with those of the PBE-GGA exchange correlation functional and the LDA + U method. The results for Co₂FeSi and Co₂MnSi are completely different; using the PBE0 hybrid functional for Co₂FeSi predicts experimental magnetic moment and also predicts this material to be half-metallic ferromagnet, while using PBE-GGA predicts it not to be half-metal. The results of PBE0 are more similar to the ones obtained by LDA + U method.     

Spatial distribution of structural disorder in Co2FeSi films studied by anisotropic magnetoresistance

We studied the spatial distribution of the partially disordered B2 phase in Co₂FeSi films by anisotropic magnetoresistance measurements. The analysis of our experimental results allows not only for the discrimination between different models for the spatial distribution of structural disorder, but also enables us to estimate the volume fraction occupied by the partially disordered B2 phase within the Co₂FeSi films grown on GaAs. In particular, our findings are in accordance with a laterally inhomogeneous distribution of the structural disorder in the topmost part of Co₂FeSi films.     

Half-metallic properties of the Co2Ti1−xFexGa Heusler alloys and Co2Ti0.5Fe0.5Ga (0 0 1) surface

Electronic and magnetic properties of the bulk Co₂Ti_1−xFe_xGa Heusler alloys and Co₂Ti_0.5Fe_0.5Ga (0 0 1) surfaces are studied within the framework of density functional theory using the augmented plane wave plus local orbital (APW+lo) approach. It will be shown that all alloys have the spin polarization of the ideal 100% value except the Co₂FeGa alloy with spin polarization about 98%. Co₂Ti_0.5Fe_0.5Ga is an example that is stable against the effects destroying the half-metallicity due to the position of the Fermi energy (E_F) in the middle of the minority band gap. The phase diagram obtained by ab-initio atomistic thermodynamics shows that in the higher limit of μ_Ga three surfaces of FeGa, TiGa and TiFeGa are accessible in the Co₂Ti_0.5Fe_0.5Ga alloy but on decreasing μ_Ga, the accessible region gradually moves towards FeGa termination. It is discussed that, at the ideal surfaces, half-metallicity of the alloy is lost, although the TiGa surface keeps high spin polarization (about 95%).     

Persistent spin splitting of a two-dimensional electron gas in tilted magnetic fields

The effect of atomic disorder on the electron transport and the magnetoresistance (MR) of Co₂CrAl Heusler alloy (HA) films has been investigated. We show that Co₂CrAl films with L2₁ order exhibit a negative value for the temperature coefficient of resistivity (TCR) in a temperature range of 10 < T < 290 K, and the temperature dependence of electric conductivity varies as T ^3/2 similarly to that of the zero-gap semiconductors. The atomic or the site disorder on the way of L2₁ → B2 → A2 → amorphous state in Co₂CrAl HA films causes the deviation from this dependence: reduction in the absolute value of TCR as well as decrease in the resistivity down to ϱ(T = 293 K) ∼ 200 μΩ cm in comparison to ϱ(T = 293 K) ∼ 230 μΩ cm typical for the Co₂CrAl films with L2₁ order. The magnetic-field dependence of MR of the Co₂CrAl films with L2₁ order is determined by two competing contributions: a positive Lorentz scattering and a negative s-d scattering. The atomic disorder in Co₂CrAl films drastically changes MR behavior due to its strong influence on the magnetic properties.     

Manufacturing of Sputtering Composite Targets Containing Phases of Co<Subscript>2</Subscript>FeSi or Co<Subscript>2</Subscript>MnSi Heusler Alloy

The paper presents a method for manufacturing mechanically strong sputtering composite targets containing the phase of the Co₂FeSi or Co₂MnSi Heusler alloy of the stoichiometric composition, which can be used for fabrication of spin electronic devices by high-frequency magnetron deposition and pulsed laser deposition of thin films.     

Co50Fe25-xMnxSi25系列合金的结构、磁性和半金属性研究

利用实验和能带计算相结合的方法,对介于两种预期的半金属Heusler合金Co₂FeSi和Co₂MnSi间的四元合金Co₅₀Fe_25-xMn_xSi₂₅的晶体结构、磁性、能带结构和半金属性进行了研究.采用考虑库仑相互作用的的广义梯度近似方法计算了系列合金的能带结构,通过与实验结果进行对比,揭示了成分变化过程中合金分子磁矩及原子磁矩的变化规律.研究发现, 关键词： 磁性 半金属 Heusler合金     

Multi-channel magnetotransport in Co2FeSi/(Al,Ga)As spin-LEDs

We have performed Hall effect measurements on Co₂FeSi/(Al,Ga)As spin light emitting diodes and have found unique field dependencies that differ strongly from the expected behaviors for both the ferromagnetic Co₂FeSi layer and the underlying semiconductor structure. To understand such unique field dependencies, we have developed a multi-channel transport model for parallel transport through a ferromagnet and a semiconductor. By applying this model to our data for the Hall and sheet resistance, we extract values for the carrier density and mobility in the semiconductor layer. We find that these values decrease with increasing growth temperature of the Co₂FeSi layer, presumably due to stronger in-diffusion of Co and Fe impurities, which compensate the n-type dopants in the underlying n-(Al, Ga) As layer. Despite such compensation, spin-LEDs with the Co₂FeSi layer grown at the relatively high temperature of 280 °C exhibit the highest spin injection efficiencies of more than 50%, hence calling into question the requirement of electron tunneling through the ferromagnet/semiconductor Schottky barrier for efficient spin injection.     

The effect of 4d states based full Heusler alloy on the electronic and magnetic properties of new half metallic ferromagnetism: DFT+U study

A full heusler alloy Ru₂MoSb is studied using the full potential linearized augmented plane wave (FP-LAPW) method based on density functional theory (DFT). Structural, electronic and magnetic properties are investigated for this material. We have used the generalized gradient approximation of Perdew, Burke, and Ernzerh (GGA-PBE), the GGA+U and the modified Becke–Johnson potential of GGA+U (mBJ-GGA+U) to model exchange correlation potential. The Hubbard on-site Coulomb interaction correction U is calculated by constraint local density approximation for both 4d elements Ru and Mo.For both approximations GGA+U and mBJ- GGA+U, density of states and band structure reveal that our compound has a half-metallic character. Magnetic properties show that Ru₂MoSb is ferromagnetic with an integer magnetic moment of 3 µB which is in good agreement with the Slater–Pauling rule. The half-metallicity of Ru₂MoSb is stable under lattice constant changes which makes it a potential contender for spintronic applications.The negative values of the cohesion energy and the formation energy indicate that our Heusler alloy can be synthesized and stabilized experimentally.     

A comparative study of a Heusler alloy Co2FeGe using LSDA and LSDA+U

We have calculated the on-site Coulomb repulsion (U) for the transition elements Co and Fe. To study the impact of Hubbard potential or on-site Coulomb repulsion (U) on structural and electronic properties the calculated values of U were added on GGA and LSDA. We performed the structure optimization of Co₂FeGe based on the generalized gradient approximation (GGA and GGA+U). The calculation of electronic structure was based on the full potential linear augmented plane wave (FP-LAPW) method and local spin density approximation (LSDA) as well as exchange correlation LSDA+U. The Heusler alloy Co₂FeGe fails to give the half-metallic ferromagnetism (HMF) when treated with LSDA. The LSDA+U gives a good result to prove that Co₂FeGe is a HMF with a large gap of 1.10 eV and the Fermi energy (E_F) lies at the middle of the gap of minority spin. The calculated density of states (DOS) and band structure show that Co₂FeGe is a HMF when treated with LSDA+U.     

A better ferrimagnetic half-metal LuCu3Mn4O12: Predicted from first-principles investigation

Electronic structure calculations based on density functional theory (DFT) within the generalized gradient approximation (GGA) and GGA+U for manganite cuprate compound LuCu₃Mn₄O₁₂ have been performed, using the full-potential linearized augmented plane wave method. The calculated results indicate that LuCu₃Mn₄O₁₂ is ferrimagnetic and half-metallic in both GGA and GGA+U calculations. The minority-spin band gap is 0.7 eV within GGA, which is larger than that of LaCu₃Mn₄O₁₂ (0.3 eV), indicating its better half-metallicity. Further, the minority-spin gap enlarges from 0.7 to 2.8 eV with U taken into account, and simultaneously the Fermi level being shifted to the middle of the gap, making the half-metallic energy gap to be 1.21 eV. These results demonstrate that electronic correlation effect enhances the stability of half-metallic property. These facts make this system interesting candidates for applications in spintronic devices.     

Magnetoresistance in point contacts of the Heusler alloy Co2Cr0.6Fe0.4Al

Following a recent report predicting half-metallicity of Co₂Cr_0.6Fe_0.4Al, we have examined point contacts of this material. Large magnetoresistances (up to 80%) have been observed at room temperature in small fields (10 mT). Magnetostriction in these fields is negligible. A spin polarisation of 81% is inferred. Mössbauer spectra show that 90% of the iron is ordered. The magnetisation of the alloy is 3.65μ_B per formula unit, and its Curie temperature is 665 K.     

The effect of defects on the electronic structure and magnetic map of the Fe<Subscript>2</Subscript>CrSi Heusler alloy: ab-initio calculations

Density functional theory (DFT) calculations are performed using the full-potential linearized augmented plane wave (FP-LAPW) and generalized gradient approximation (GGA) to study the electronic and magnetic properties of perfect and defected Fe₂CrSi Heusler alloy. The perfect structure was found to be a half-metallic ferromagnet with a total magnetic moment of 2 μ _B and a band gap 0.6 eV. The Fermi level is found to be in the middle of this gap, which is promising for fabricating tunneling magnetoresistance (TMR) devices. Among the studied defected structures Fe_Si and Cr_Si antisite defects as well as Fe-Si and Cr-Si defects destroyed the half metallicity. However the remaining antisite, swap and vacancy defects retained the half metallicity with band gaps lower than the perfect case.     

Transport properties of Co<Subscript>2</Subscript>CrAl Heusler alloy films

The effect of atomic disorder on the electron transport and the magnetoresistance (MR) of Co₂CrAl Heusler alloy (HA) films has been investigated. We show that Co₂CrAl films with L2₁ order exhibit a negative value for the temperature coefficient of resistivity (TCR) in a temperature range of 10 < T < 290 K, and the temperature dependence of electric conductivity varies as T ^3/2 similarly to that of the zero-gap semiconductors. The atomic or the site disorder on the way of L2₁ → B2 → A2 → amorphous state in Co₂CrAl HA films causes the deviation from this dependence: reduction in the absolute value of TCR as well as decrease in the resistivity down to ?(T = 293 K) ～ 200 μΩ cm in comparison to ?(T = 293 K) ～ 230 μΩ cm typical for the Co₂CrAl films with L2₁ order. The magnetic-field dependence of MR of the Co₂CrAl films with L2₁ order is determined by two competing contributions: a positive Lorentz scattering and a negative s-d scattering. The atomic disorder in Co₂CrAl films drastically changes MR behavior due to its strong influence on the magnetic properties.     

铁基Heusler合金Fe2Co1-xCrxSi的结构、磁性和输运性质的研究

基于多种实验手段和能带计算的方法, 对四元合金Fe₂Co_1-xCr_xSi的晶体结构、 磁性、输运性质及能带结构进行了研究. 研究发现, 随着Cr的增加, 合金Fe₂Co_1-xCr_xSi保持了高度有序结构, 逐渐从Hg₂CuTi结构的Fe₂CoSi 过渡到L2₁结构的Fe₂CrSi; 由于次晶格网络的破坏, 居里温度逐渐下降; 系列合金的分子磁矩呈现线性下降, 符合半金属特性; 剩余电阻比率与原子占位有序程度密切相关, 呈现两端大、 中间小的特点. 在Cr替代Co的过程中, 材料半金属能隙逐渐打开, 表现半金属特征. 同时费米能级从Fe₂CoSi半金属能隙的价带顶上移至Fe₂CrSi能隙的导带底. 最大的能隙宽度出现在x= 0.75处, 这表明四元合金有可能成为具有更高自旋极化率和更强抗干扰能力的自旋电子学材料.     

Crystallization behavior and microstructure of Fe75Co6Zr9B10 alloy

Fe₇₅Co₆Zr₉B₁₀ amorphous alloy prepared by melt-spinning was annealed at various temperatures. The crystallization behavior and microstructure were investigated by differential thermal analysis (DTA), X-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM). The three exothermal peaks in the DTA curve of Fe₇₅Co₆Zr₉B₁₀ amorphous alloy correspond to the formations of α-Fe and α-Mn type phases, the growth of BCC-Fe volume fraction at the expense of α-Mn and residual amorphous phase and the precipitations of Fe₃Zr, etc. intermetallic compounds, respectively. The second exothermic peak is not influenced by heating rate, but it shifts to a higher temperature region with increasing preannealing temperature of Fe₇₅Co₆Zr₉B₁₀ alloy. The α-Mn type phase is metastable and its lattice parameter determined by TEM is 0.8830 nm. AFM images show the development of surface morphology of alloy after annealing. The particle size increases with increasing annealing temperature.     

Formation of Heusler alloy Co2FeSi thin films on the surface of single-crystal silicon

The initial stages of Heusler alloy (Co₂FeSi) thin film growth by reactive epitaxy on the Si(100)2 × 1 surface are studied, and formation conditions for this alloy are found. At a substrate temperature of lower than, or equal to, 180°C, an island film of ternary Co-Fe-Si film grows on the surface. The silicon content in this film is lower than in the compound to be synthesized. The film becomes continuous when its thickness exceeds 1.2 nm. It is shown that post-growth annealing at 240°C can raise the silicon content in the film and be conducive to obtaining Heusler alloy of a desired composition. In situ measurements of the films show that ferromagnetic ordering in them has a threshold and shows up at the coalescence growth stage of the Co-Fe-Si island alloy.     

Electronic structure and thermodynamic properties of platinum–lead oxides PbPt2O4 and Pb2PtO4 by ab initio methods

We report the electronic structure and thermodynamic properties of platinum–lead oxides PbPt₂O₄ and Pb₂PtO₄. The band structure is calculated by the full-potential, full-relativistic local orbital minimum basis (FPLO) method in the local density approximation, including the generalized gradient approximation (GGA) and GGA+U, respectively. The values of gaps in Pb₂PtO₄ were estimated as 0.47, 1.02, and 0.52 eV in GGA, GGA+U, and the full-relativistic GGA, respectively. Pb₂PtO₄ is a semiconductor, and PbPt₂O₄ is a metallic conductor with the small values of the density of states at the Fermi level. The effect of chemical disorder in Pb_2?xPt_1+xO₄ alloys is studied by the relaxation of the volume, shape, and the positions of atoms in the unit cell, using the Vienna Ab initio Simulation Package (VASP) method. The thermodynamic properties are computed in the quasi-harmonic Debye–Grüneisen model. The dependence of the thermodynamic parameters on the pressure and temperature is also presented.     

Composition dependence of magnetic anisotropy and quadratic magnetooptical effect in epitaxial films of the Heusler alloy Co2MnGe

Magnetic anisotropy and magnetooptic Kerr effect for epitaxial films of Co_xMn_yGe_1−x−y grown on Ge (1 1 1) substrates have been studied systematically in the compositional vicinity of the Heusler alloy Co₂MnGe. A large quadratic magnetooptic Kerr effect has been observed within a narrow region of composition centered around the Co to Mn atomic ratio of 2. The effect has been used to probe and quantify the magnetic anisotropy of the system, which is shown to have a strong sixfold in-plane component accompanied by a weak uniaxial component at room temperature. These properties are shown to depend sensitively on atomic ratio between Co and Mn, indicating the presence of an intrinsic composition-driven phenomenon.     

The role of Co impurities and oxygen vacancies in the ferromagnetism of Co-doped SnO2: GGA and GGA+U studies

The electronic structure and ferromagnetic stability of Co-doped SnO₂ are studied using the first-principle density functional method within the generalized gradient approximation (GGA) and GGA+U schemes. The addition of effective U_Co transforms the ground state of Co-doped SnO₂ to insulating from half-metallic and the coupling between the nearest neighbor Co spins to weak antimagnetic from strong ferromagnetic. GGA+U_Co calculations show that the pure substitutional Co defects in SnO₂ cannot induce the ferromagnetism. Oxygen vacancies tend to locate near Co atoms. Their presence increases the magnetic moment of Co and induces the ferromagnetic coupling between two Co spins with large Co-Co distance. The calculated density of state and spin density distribution calculated by GGA+U_Co show that the long-range ferromagnetic coupling between two Co spins is mediated by spin-split impurity band induced by oxygen vacancies. More charge transfer from impurity to Co-3d states and larger spin split of Co-3d and impurity states induced by the addition of U_Co enhance the ferromagnetic stability of the system with oxygen vacancies. By applying a Coulomb U_O on O 2 s orbital, the band gap is corrected for all calculations and the conclusions derived from GGA+U_Co calculations are not changed by the correction of band gap.