Temperature and concentration dependences of the photoluminescence of MEH-PPV polymer composite films with ZnO nanoparticles

The absorption and photoluminescence (PL) spectra of MEH-PPV: ZnO composite films have been investigated at different concentrations of ZnO nanoparticles and at different temperatures (in the case of PL). It has been shown that, at 297 K, with increasing concentration of ZnO nanoparticles in the composite, the intensity of the PL lines of MEH-PPV decreases, whereas the intensity of the PL lines of ZnO increases. At a relatively low concentration of ZnO nanoparticles, a decrease in the temperature leads to an increase in the intensity of PL lines associated with MEH-PPV and ZnO, whereas at higher concentrations of ZnO nanoparticles, the intensity of these lines decreases. This is accompanied by a slight shift in the maximum of the PL toward the infrared (IR) region and a narrowing of the PL line of MEH-PPV with a decrease in the temperature and with an increase in the ZnO concentration. The mechanism of energy transfer in composite systems consisting of a polymer and inorganic nanoparticles that can be responsible for the observed effects has been discussed.     

Organic light-emitting diodes based on polyvinylcarbazole films doped with polymer nanoparticles

The optical and electrical properties of light-emitting diode structures with an active layer based on nanocomposite polyvinylcarbazole (PVK) films doped with nanoparticles of another light-emitting polymer, MEH-PPV, have been studied. It has been established that the size of MEH-PPV particles in the PVK matrix is of the order of 100 nm. The spectral range of photoluminescence of such structures can be changed by varying the ratio of PVK to MEH-PPV. The current-voltage characteristics of composite light-emitting diodes based on PVK: MEH-PPV films indicate p-type conductivity. It has been shown that a decrease in the MEH-PPV nanoparticle concentration in the PVK matrix shifts the threshold values of the bias for the onset of electroluminescence toward smaller values and makes the photoluminescence and electroluminescence spectra more similar to the spectrum of the white light-emitting diode. The influence of the form of the polymer and polymer nanoparticles on the mechanisms of injection and transport of charge carriers and the radiative recombination in the studied structures has been discussed.     

Switching effects in composite films based on the conjugated polymer polyfluorene and ZnO nanoparticles

The S- and N-shaped current—voltage characteristics have been studied for composite films of the conjugated polymer polyfluorene and ZnO nanoparticles deposited onto Al and In₂O₃/SnO₂ electrodes with and without an intermediate sublayer of the conducting polymer PEDT/PSS. The differences in the current— voltage characteristics of the systems (the N- and S-types, respectively) are interpreted using the electro-thermal switching model, which takes into account the structural and electric properties of PEDT/PSS. The switching provides both alignment of polymer molecules and tunneling of charge carriers, which leads to an increase in conductivity. The current flow in this structure causes an increase in temperature of conducting channels; when the temperature reaches certain levels, the conductivity of the channels decreases because the alignment of polymer molecules is upset, which creates an N-shaped form of the current—voltage characteristics.     

单根砷掺杂氧化锌纳米线场效应晶体管的电学及光学特性

采用化学气相沉积（CVD）的方法在砷化镓基底上合成直径为20 nm左右、长约数十微米的氧化锌纳米线,然后采用热扩散的方法,将生长于砷化镓基底之上的氧化锌纳米线通过600 ℃,30 min的有氧退火处理后,获得了砷掺杂的氧化锌纳米线.将获得的掺杂后的氧化锌纳米线采用电子束曝光以及真空溅射镀膜的方法将钛/金合金作为接触电极引出,从而构建成场效应晶体管.文中研究了单根氧化锌纳米线砷掺杂前后的电学特性,证实了通过砷掺杂来获得p型的氧化锌纳米线的可行性.构建的p型砷掺杂氧化锌场效应晶体管的跨导为35 nA/V,载流 关键词： p型ZnO纳米线 砷掺杂 场效应晶体管 光致发光     

Solvent effects on the electrical and optical properties of composite carbon nanotube/MEH-PPV films

Optical signals were used to modulate the resistance of single-walled carbon nanotube–polymer composite films for development of optical switching devices. Films were fabricated from nanotubes dispersed in poly(2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV) solutions in either tetrahydrofuran (THF) or toluene. MEH-PPV was affected by the solvent choice, with THF causing an absorbance shift to shorter wavelengths. Composite films formed from THF dispersions showed 1–4% resistance decreases when illuminated with a green diode laser. Illumination of toluene-based films showed up to 5.4% resistance decreases, smaller than expected based on the polymer solution absorbance. Fluorescent emission from the polymer in toluene appears to inhibit charge transfer from the polymer to the nanotubes. THF films were unaffected by illumination with a red diode laser, while toluene dispersion films showed resistance decreases up to 1%. Nanotube dispersion and film formation reproducibility, evaluated for both the solvents, showed that the solvent affected film resistance and dispersion stability.     

形变碳纳米管场效应晶体管的电学性质

在紧束缚理论的基础上,推导出轴向拉伸和扭转形变时碳纳米管（CNT）的能带公式.结果显示拉伸和扭转形变都可以改变CNT的导电性质,在金属型和半导体型之间转变,特别是对于锯齿型CNT,根据n 与3的余数关系,在拉伸和扭转中分别显示出三种不同的变化规律.进一步应用场效应晶体管Natori理论模拟计算形变对CNT场效应晶体管的电流-电压特性的影响,锯齿型CNT根据n 与3的余数关系表现出不同的电流变化趋势,而对于扶手椅型CNT轴向拉伸不改变电流;在扭转形变时,CNT电流急剧升高,特别是扶手椅型CNT.锯齿型CNT和扶手椅型CNT的电流随扭转角度和外电压行为明显不同.在某些特定的扭转角度,电流随扭转角度变化非常显著,显示出锯齿型CNT和扶手椅型CNT发生半导体型与金属型之间的转变. 关键词： 碳纳米管 紧束缚理论 费米能级 能带结构     

Memory effects in field-effect transistor structures based on composite films of polyepoxypropylcarbazole with gold nanoparticles

The memory effects in field-effect transistor structures with an active layer based on composite films of a semiconductor polymer, i.e., the carbazole derivative and gold nanoparticles, manifesting themselves in the hysteresis of the transient characteristics of the transistor have been studied. It has been shown that the observed effects are associated with the features of transport in the polymer-gold nanoparticle structure, where the gold particles serve as a medium of charge carrier collection (accumulation). The data writeerase mechanism based on conductivity modulation of the working channel of the field-effect transistor by the gate voltage have been discussed.     

Blue shift in the luminescence spectra of MEH-PPV films containing ZnO nanoparticles

Luminescence properties of nanocomposites consisting of ZnO nanoparticles in a conjugated polymer, poly [2-methoxy-5-(2′-ethyl hexyloxy)-phenylene vinylene] (MEH-PPV), were investigated. Photoluminescence measurements reveal a blue shift in the emission spectrum of MEH-PPV upon incorporation of ZnO nanoparticles into the polymer film while the emission is increasingly quenched with increasing ZnO concentration. In contrast, the structure of the polymer and its conjugation length are not affected by the presence of ZnO nanoparticles (up to 16 wt% ZnO) as revealed by Raman spectroscopy. The blue shift and photoluminescence quenching are explained by the separation of photogenerated electron-hole pairs at the MEH-PPV/ZnO interface and the charging of the nanoparticles.     

Electrical and optical properties of Al-doped ZnO thin films by sol-gel process

Al-doped ZnO (AZO) thin films oriented along the (0 0 2) plane have been prepared by the sol-gel process and their electrical and optical properties with post-deposition heating temperature were investigated. The preferred c-axis orientation along the (0 0 2) plane was enhanced with increasing post-deposition heating temperature and the surface of the films showed a uniform and nano-sized microstructure. The electrical resistivity of the films decreased from 73 to 22 Ω cm as the post-deposition heating temperature increased from 500 to 650 °C; however, the film postheated at 700 °C increased greatly to 580 Ω cm. The optical transmittance of the films postheated below 650 °C was over 86%, but it decreased at 700 °C. The electrical and optical properties of the AZO films with post-deposition heating temperature are discussed.     

Electrical and optical properties of ZnO films grown by molecular beam epitaxy

Zinc oxide (ZnO) films have been grown on sapphire by molecular beam epitaxy (MBE), and it is found that the grain size of the ZnO films increased with increasing the growth temperature. Photoluminescence (PL) study shows that the intensity ratio of near-band-edge emission to deep-level-related emission (NBE/DL) of the ZnO is significantly enhanced with increasing the growth temperature, and the dependence of the carrier mobility on the growth temperature shows very similar trend, which implies that there is a community factor that determines the optical and electrical properties of ZnO, and this factor is suggested to be the grain boundary. The results obtained in this paper reveal that by reducing the grain boundaries, ZnO films with high optical and electrical properties may be acquired.     

Electrical and optical properties of ZnO films prepared by sputtering of ZnO targets containing AlN

ZnO films prepared from the ZnO target containing 2% AlN are transparent irrespective of radio frequency (RF) power. The obtained ZnO films have the carrier density of 3.8 × 10²⁰ cm⁻³ or less and the low mobility of 5.3-7.8 cm²/(V s). In the case of 5% AlN target, ZnO films prepared at 40, 60 and 80 W are transparent, whereas ZnO films prepared at 100 and 120 W are colored. As RF power increases from 40 to 120 W, the carrier density increases straightforwardly up to 5.5 × 10²⁰ cm⁻³ at 100 W and is oppositely reduced to 3.2 × 10²⁰ cm⁻³ at 120 W. In the case of 10% AlN target, ZnO films prepared at 60 W or more are colored, and have the carrier density of 4 × 10²⁰ cm⁻³ or less. The N-concentration in these colored films is estimated to be 1% or less. The Al-concentration in the ZnO films prepared from the 5 and 10% AlN targets is higher than 2%. The carrier density of the ZnO films containing Al and N atoms is nearly equal to that of ZnO films doped with Al atoms alone. There is no evidence in supporting the enhancement of the carrier density via the formation of N-Al_xZn_4−x clusters (4 ≥ x ≥ 2).     

Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol–gel method

Sb-doped ZnO thin films with different values of Sb content （from 0 to 1.1 at.%） are deposited by the sol-gel dip- coating method under different sol concentrations. The effects of Sb-doping content, sol concentration, and annealing ambient on the structural, optical, and electrical properties of ZnO films are investigated. The results of the X-ray diffraction and ultraviolet-visible spectroscopy （UV-VIS） spectrophotometer indicate that each of all the films retains the wurtzite ZnO structure and possesses a preferred orientation along the c axis, with high transmittance （〉 90%） in the visible range. The Hall effect measurements show that the vacuum annealed thin films synthesized in the sol concentration of 0.75 mol/L each have an adjustable n-type electrical conductivity by varying Sb-doping density, and the photoluminescence （PL） spectra revealed that the defect emission （around 450 nm） is predominant. However, the thin films prepared by the sol with a concentration of 0.25 mol/L, despite their poor conductivity, have priority in ultraviolet emission, and the PL peak position shows first a blue-shift and then a red-shift with the increase of the Sb doping content.     

Electrical,optical and mechanical properties of PS/GNP composite films

In this study, the electrical, optical and mechanical properties of polystyrene (PS) thin films added graphene nanoplatelet (GNP) have been investigated. Surface conductivity (σ), absorbance intensity (A) and tensile modulus of these composite films have increased with increasing the content of GNP in the composite. The increase in the electrical and optical properties of the PS/GNP composite films has been interpreted by site and classical percolation theory, respectively. The electrical and the optical percolation thresholds of PS/GNP composite films were determined as R_σ?=?23.0?wt.% and R_op?=?13.0?wt.%, respectively. While the conductivity results have been attributed to the classical percolation theory, the optical results have attributed to the site percolation theory. The electrical (β_σ) and the optical (β_op) critical exponents were calculated as 2.54 and 0.40, respectively. The tensile modulus and the tensile strength of the PS/GNP composites increased with the increasing of GNP content in the PS. But, the toughness of the composites fluctuated with GNP addition.     

Electrical and optical spectroscopy on ZnO:Co thin films

Magnetic oxide semiconductors, for example the highly transparent and intrinsically n-type conducting zinc oxide doped with the 3d transition metal Co (ZnO:Co), are promising for the emerging field of spintronics [1]. We investigated n-conducting ZnO:Co thin films with a Co content of nominal 0.02, 0.20, or 2.00 at. %. The substitution of Co cations in the tetrahedral sites of wurtzite ZnO with Zn was confirmed at low temperature by the 1.877 eV photoluminescence between crystal field split d-levels of Co²⁺ (d⁷) ions. Based on theoretical studies, it is predicted that the formation of electron levels with zinc interstitials (I_Zn) or hole levels with zinc vacancies (V_Zn) is necessary to induce ferromagnetism, whereas the formation of electron levels with oxygen vacancies (V_O) is detrimental for ferromagnetism in ZnO:Co [2]. Cobalt generates a hole level in ZnO [3]. We investigated the generation of electron levels in n-conducting ZnO:Co in dependence on the Co content by means of deep level transient spectroscopy (DLTS). However, because of the ambiguous categorization of deep defects in n-conducting ZnO (V_O, I_Zn), an optimization of defect-related ferromagnetism in ZnO:Co is not possible at the moment. PACS 78.30.Fs; 91.60.Ed; 91.60.Mk     

外加轴向磁场下碳纳米管场效应晶体管的电学性质

在紧束缚理论的基础上推导出轴向磁场下碳纳米管的能带公式,研究外加磁场下碳纳米管场效应晶体管的电学特性.说明磁场可使碳管的导电性质在金属型和半导体型之间转变,转变的磁场周期为0.5₀.进一步应用场效应晶体管Natori理论模拟计算了外加磁场对碳纳米管场效应晶体管的电流-电压特性的影响,研究结果显示zigzag管和armchair管的电流随外电压和磁场都有振荡行为,而且两类管的振荡行为有明显差别. 关键词： 碳纳米管 紧束缚理论 费米能 能带结构     

Photosensitive field-effect transistor based on a composite film of polyvinylcarbazole with nickel nanoparticles

The electronic and optoelectronic properties of field-effect transistor structures with an active layer based on composite films of a semiconducting polymer, namely, polyvinylcarbazole (PVC), with nickel nanoparticles have been investigated. It has been shown that these structures at low nickel concentrations (5–10 wt %) possess current-voltage characteristics that indicate an ambipolar transport. For the field-effect transistor structures based on PVC: Ni (Ni ～ 5 wt %) films, the mobilities of electrons and holes are found to be ～1.3 and ～1.9 cm²/V s, respectively. It has been established that the photosensitivity observed in these structures is associated with the specific features of transport in the film of the polymer with nickel nanoparticles. The mechanism of this transport is determined by the modulation of electrical conductivity of the working channel of the field-effect transistor by applying a combination of incident light and gate voltages.     

Study of optical properties of electrospun light-emitting polymer fibers

We realize light-emitting polymer fibers based on both optically inert polymers doped by molecules exhibiting optical gain and optically active conjugated polymers. Waveguiding properties of the produced polymer structures are demonstrated, with a loss coefficient of around 10³ cm⁻¹. We also find that single polymer fibers doped with gain molecules form Fabry–Pérot cavities, showing photoluminescence spectra with modes equally spaced by 1.7 nm. Coherent emission is demonstrated from fibers made upon increasing the excitation fluence above threshold values of the order of a few tens of μJ/cm².     

Effect of distance between acceptor and donor on optical properties of composite semiconducting polymer films

The excitation energy transfer from poly(N-vinylcarbazole) (PVK) to tris(8-hydroxyquinoline) aluminum (Alq₃) in composite films was investigated by adding an inert polymer, poly(methyl methacrylate) (PMMA). The energy transfer efficiency calculated from the photoluminescence (PL) excitation spectra is consistent with that from the time-resolved PL decay data of the composite films. We have found a linear relationship between the two kinds of the distances, which are calculated according to volume density and the Förster theory. Experimental results and analyses provide a facile method to infer the energy transfer efficiency and the distance between the donor and the acceptor molecules in the composite films.     

Metal-polymer composite films based on polyacrylonitrile and silver nanoparticles. Preparation and properties

The structures consisting of silver nanoparticles and polyacrylonitrile (PAN) are synthesized by the photopolymerization method yielding a homogeneous dispersion and a small size spread of nanoinclusions in PAN matrices, which is observed in images of transmission electron microscopy. The optical properties of the nanocomposites are studied to depend upon conditions of their obtaining. The minimum in the transmission spectra in a wavelength region of 430 nm, which is attributed to the surface plasmon resonance of silver nanoparticles, is found. The absorption peaks in the infrared range are observed at ∼820 and ∼1110 cm⁻¹ for the silver nitrate (AgNO₃) and the photoinitiator, respectively.     

Structural and optical properties of Au-implanted ZnO films

The structural and luminescence related optical behaviours of Au ion implanted ZnO films grown by magnetic sputtering and their post implantation annealing behaviours in the temperature range of 100-700 °C have been investigated. Optical absorption and transmittance spectra of the films indicate that band edge of Au-implanted ZnO has shifted to high energy range and optical band gap has increased, because the sharp difference of thermal expansion induces the lattice mismatch between ZnO and SiO₂. PL spectra reveal that UV and visible luminescence bands of ZnO films can be improved after thermal annealing due to recovery of defects and Au ions incorporation. Importantly, green luminescence band of 530 nm has been only observed in the Au-implanted and subsequently annealed ZnO films and it enhances with the increasing annealing temperature, which can be related to Au atoms or clusters in ZnO films. Furthermore, X-ray photoelectron spectroscopy measurements reveal that the Au⁰ is dominant state in Au implanted and annealed ZnO films. Possible mechanisms, such as optical transitions of Au atoms or clusters and deep level luminescence of ZnO, have been proposed for green emission.